JP2008527757A5 - - Google Patents

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Publication number
JP2008527757A5
JP2008527757A5 JP2007557020A JP2007557020A JP2008527757A5 JP 2008527757 A5 JP2008527757 A5 JP 2008527757A5 JP 2007557020 A JP2007557020 A JP 2007557020A JP 2007557020 A JP2007557020 A JP 2007557020A JP 2008527757 A5 JP2008527757 A5 JP 2008527757A5
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JP
Japan
Prior art keywords
film
low
ppm
curing
dielectric
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Application number
JP2007557020A
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English (en)
Japanese (ja)
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JP5065054B2 (ja
JP2008527757A (ja
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Priority claimed from US11/034,479 external-priority patent/US7357977B2/en
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Publication of JP2008527757A publication Critical patent/JP2008527757A/ja
Publication of JP2008527757A5 publication Critical patent/JP2008527757A5/ja
Application granted granted Critical
Publication of JP5065054B2 publication Critical patent/JP5065054B2/ja
Expired - Fee Related legal-status Critical Current
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JP2007557020A 2005-01-13 2006-01-12 制御された二軸応力を有する超低誘電率膜および該作製方法 Expired - Fee Related JP5065054B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/034,479 US7357977B2 (en) 2005-01-13 2005-01-13 Ultralow dielectric constant layer with controlled biaxial stress
US11/034,479 2005-01-13
PCT/US2006/001154 WO2007089223A2 (en) 2005-01-13 2006-01-12 Ultralow dielectric constant layer with controlled biaxial stress

Publications (3)

Publication Number Publication Date
JP2008527757A JP2008527757A (ja) 2008-07-24
JP2008527757A5 true JP2008527757A5 (enExample) 2008-11-27
JP5065054B2 JP5065054B2 (ja) 2012-10-31

Family

ID=38327796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007557020A Expired - Fee Related JP5065054B2 (ja) 2005-01-13 2006-01-12 制御された二軸応力を有する超低誘電率膜および該作製方法

Country Status (6)

Country Link
US (3) US7357977B2 (enExample)
EP (1) EP1854131A4 (enExample)
JP (1) JP5065054B2 (enExample)
CN (1) CN101548362B (enExample)
TW (1) TW200636859A (enExample)
WO (1) WO2007089223A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892648B2 (en) * 2005-01-21 2011-02-22 International Business Machines Corporation SiCOH dielectric material with improved toughness and improved Si-C bonding
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
US20070176292A1 (en) * 2006-01-27 2007-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding pad structure
JP4675258B2 (ja) * 2006-02-22 2011-04-20 富士通セミコンダクター株式会社 半導体装置の製造方法および半導体装置
JP2008103586A (ja) * 2006-10-20 2008-05-01 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US8053375B1 (en) * 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
JP5140290B2 (ja) * 2007-03-02 2013-02-06 富士フイルム株式会社 絶縁膜
JP5304033B2 (ja) * 2007-08-31 2013-10-02 富士通株式会社 半導体装置の製造方法
US8338315B2 (en) * 2008-02-26 2012-12-25 Axcelis Technologies, Inc. Processes for curing silicon based low-k dielectric materials
JP2010129824A (ja) * 2008-11-28 2010-06-10 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP5565314B2 (ja) * 2008-12-08 2014-08-06 富士通株式会社 半導体装置の製造方法及びその製造装置
US20160013049A1 (en) * 2013-03-14 2016-01-14 Applied Materials, Inc. Enhancing uv compatibility of low k barrier film
CN103531463A (zh) * 2013-10-30 2014-01-22 苏州大学 低表面孔隙低介电常数薄膜材料的制备方法
CN104900580B (zh) * 2014-03-04 2018-05-01 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
EP3367425A1 (en) * 2017-02-28 2018-08-29 IMEC vzw A method for direct bonding of semiconductor substrates
US11038153B2 (en) 2019-01-15 2021-06-15 Applied Materials, Inc. Methods for HMDSO thermal stability
US11114606B2 (en) * 2019-09-23 2021-09-07 International Business Machines Corporation MRAM devices containing a harden gap fill dielectric material
US11621162B2 (en) * 2020-10-05 2023-04-04 Applied Materials, Inc. Systems and methods for forming UV-cured low-κ dielectric films
US12119223B2 (en) 2020-12-27 2024-10-15 Applied Materials, Inc. Single precursor low-k film deposition and UV cure for advanced technology node

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
IT1177272B (it) * 1984-11-20 1987-08-26 Alusuisse Italia Spa Catalizzatore per reazioni di ossidazione e procedimento per la sua produzione
US5384156A (en) * 1993-08-23 1995-01-24 Litton Systems, Inc. Reversible method of magnetic film annealing
JP3209072B2 (ja) * 1996-02-07 2001-09-17 ソニー株式会社 絶縁膜の形成方法
TW594879B (en) * 1998-08-27 2004-06-21 Allied Signal Inc Process for optimizing mechanical strength of nanoporous silica
JP2001098218A (ja) * 1999-09-28 2001-04-10 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
JP3530165B2 (ja) * 2000-10-20 2004-05-24 株式会社東芝 半導体装置の製造方法
US6768200B2 (en) * 2000-10-25 2004-07-27 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
TW477029B (en) * 2001-02-21 2002-02-21 Nat Science Council Method of reducing thick film stress of spin on dielectric and the resulting sandwich dielectric structure
US6716770B2 (en) * 2001-05-23 2004-04-06 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
JP2003124207A (ja) * 2001-10-12 2003-04-25 Hitachi Chem Co Ltd 被膜、被膜形成用塗布液、被膜の製造方法及びその被膜を有する電子部品
JP2003243386A (ja) * 2002-02-19 2003-08-29 Asahi Kasei Corp 絶縁膜の製造方法
US7404990B2 (en) * 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US7030468B2 (en) * 2004-01-16 2006-04-18 International Business Machines Corporation Low k and ultra low k SiCOH dielectric films and methods to form the same
JP2006086280A (ja) * 2004-09-15 2006-03-30 Seiko Epson Corp ＳｉＯＣ膜の形成方法およびＳｉＯＣ膜
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7892648B2 (en) * 2005-01-21 2011-02-22 International Business Machines Corporation SiCOH dielectric material with improved toughness and improved Si-C bonding
JP5324734B2 (ja) * 2005-01-21 2013-10-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体材料とその製造方法

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