TWI234880B - A method for making a semiconductor device having a metal gate electrode - Google Patents
A method for making a semiconductor device having a metal gate electrode Download PDFInfo
- Publication number
- TWI234880B TWI234880B TW092136237A TW92136237A TWI234880B TW I234880 B TWI234880 B TW I234880B TW 092136237 A TW092136237 A TW 092136237A TW 92136237 A TW92136237 A TW 92136237A TW I234880 B TWI234880 B TW I234880B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- gate electrode
- metal layer
- layer
- oxide
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 183
- 239000002184 metal Substances 0.000 title claims abstract description 183
- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 35
- 150000001450 anions Chemical class 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- 239000000460 chlorine Substances 0.000 claims description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- -1 carbide Chemical compound 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 claims description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 125000000129 anionic group Chemical group 0.000 claims description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 150000002602 lanthanoids Chemical class 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims 2
- ASAMIKIYIFIKFS-UHFFFAOYSA-N chromium;oxosilicon Chemical compound [Cr].[Si]=O ASAMIKIYIFIKFS-UHFFFAOYSA-N 0.000 claims 2
- 229910052716 thallium Inorganic materials 0.000 claims 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 235000021355 Stearic acid Nutrition 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 229910052776 Thorium Inorganic materials 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910026551 ZrC Inorganic materials 0.000 claims 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims 1
- 230000001174 ascending effect Effects 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 230000000295 complement effect Effects 0.000 claims 1
- VJPLIHZPOJDHLB-UHFFFAOYSA-N lead titanium Chemical compound [Ti].[Pb] VJPLIHZPOJDHLB-UHFFFAOYSA-N 0.000 claims 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 claims 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 239000008117 stearic acid Substances 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- YUFHQHKPBOHTRC-UHFFFAOYSA-N barium(2+);hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ba+2].[Hf+4] YUFHQHKPBOHTRC-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000012702 metal oxide precursor Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
1234880 ⑴ 欢、發明說明 【發明所屬之技術領域】 本發明係關於製造半導體裝置之方法,特別是包含金 屬閘極電極之半導體裝置之製造方法。 【先前技術】 由二氧化矽製成的具有很薄的閘極介電質之Μ Ο S場 效電晶體會遭受無法接受的閘極漏電流。由某些高k介電 材料形成閘極介電質,取代二氧化矽,可以降低閘極漏電 。但是,此種介電質與多晶矽可能不並容。基於此理由, 希望以包含高k閘極介電質之裝置的金屬閘極電極取代多 晶矽爲基礎的閘極電極。 金屬閘極電極的最佳功函數會視其是用以形成Ν Μ Ο S 電晶體或PMOS電晶體而不同。當使用相同材料以製造用 於NMOS及PMOS電晶體的金屬閘極電極時,閘極電極無 法展現用於這二種型式的裝置之所功函數。假使選擇材料 以確保用於NMOS電晶體的閘極電極之可接受的功函數時 ,則用於PMOS電晶體閘極電極的功函數將無法令人滿意 。同樣地’選擇可以確保用於PMOS電晶體的閘極電極之 可接受的功函數將防止NMOS電晶體的閘極電極具有適當 的功函數。選取中間能隙材料(亦即,給予NMOS及 PMOS電晶體的金屬閘極電極中間功函數之材料)將造成 用於這二種電晶體之次佳功函數。 可以以第一材料形成NMOS電晶體的金屬閘極電極以 (2) 1234880 及以第二材料形成PMOS電晶體的金屬閘極電極,以解決 此問題。第一材料可以確保用於NMOS閘極電極之可接受 的功函數,而第二材料可以確保用於p M 0 s閘極電極之可 接受的功函數°但是’用於形成此雙金屬閘極裝置的製程 是複雜且昂貴的。
因此,需要改進的製程以製造包含金屬閘極電極之半 導體裝置。需要相對不昂貴及不複雜的製程以製造具有金 屬閘極電極的裝置,其可對NMOS及PMOS電晶體均能展 現最佳功函數。本發明之方法係提供此製程。 【發明內容】及【實施方式】
說明製造半導體裝置的方法。該方法包括在基底上形 成介電層、以及在介電層上形成含有雜質的金屬層。接著 以含有雜質的金屬層形成金屬閘極電極。也說明包含金屬 閘極電極之半導體裝置。該裝置包括形成於基底上的介電 層、以及形成於介電層上的金屬閘極電極。金屬閘極電極 包含足夠的雜質量以使金屬閘極電極的功函數偏移至少約 0. 1 eV。 在下述說明中,揭示許多細節以助完整瞭本發明。但 晏,習於此技藝者淸楚可知,除了此處所述的方式之外, 尙可以很多方式實施本發明。因此發明不受限於下述的特 定細節。 圖1 1 d顯示執行本發明的方法之一實施例時形成的 結構。起初,在基底]00上形成介電層1 〇 !,產生圖】a 1234880 - (3) 的結構。基底1 00包括矽塊或矽在絕緣體上的結構。或者 基底1 0 0可包括其它可以或不可以與矽合倂的材料,舉 ^ 鍺、鍊化銦、締化給、砷化銦、銦磷化物、砷化 鎵或銻化鎵。雖然此處說明數種材料的實施例可以自基 幵成’但是’作爲半導體裝置可以建於其上的基地 之任何材料係落在本發明的精神及範圍之內。 力電層1 0 1較佳地包括高k閘極介電層。這些材料中 的一些材料可以用以製造高k閘極介電質,包含:氧化飴 、棄α砂氧化物、氧化鑭、氧化銷、銷砂氧化物、氧化鈦、 氧化鉬、鋇緦鈦氧化物、鋇鈦氧化物、緦鈦氧化物、氧化 金乙、氧化錦、鉛銃鉅氧化物、及鈮酸錯鋅。特別較佳的是 氧化飴、氧化鉻、氧化鈦、及氧化鋁。雖然此處說明一些 材料的實施例可以用以形成介電層1 〇 1,但是,該層可由 能降低閘極漏電之其它材料製成。 使用例如習知的化學汽相沈積(C V D )、低壓C V D、 或物體汽相沈積(PVD )製程等習知的沈積方法,在基底 1 〇 〇上形成介電層1 0 1。較佳地,使用習知的原子層C V D 製程。在此製程中,金屬氧化物先導物(例如金屬氯化物 )及蒸汽可以以選擇的流速饋入CVD反應器,CVD反應 器接著以選取的溫度及壓力操作以在基底1 〇〇與介電層 101之間產生原子平滑介面。CVD反應器應操作得夠久以 形成具有所需厚度的層。在大部份的應用中,介電層1〇1 應小於約6 0埃厚’且更佳地在約5埃與約4 0埃厚之間。 在介電層1 〇 ]形成於基底1 〇 〇上之後,在介電層]〇】 1234880 _ ⑷ 上形成金屬閘極電極。在較佳實施例中,最初在介電層 101上形成金屬層102,以形成金屬閘極電極…產生圖lb 的結構。金屬層1 02包括任何可衍生金屬閘極電極的導電 材料。較佳地,金屬層1 〇 2具有蝕刻及熱穩定特性,使其 適於製造用於半導體裝置之金屬閘極電極。關於此點,可 能希望金屬層1 02忍受相當高的溫度,舉例而言,超過約 900°C的溫度。假使金屬層102可以承受此相當高的溫度 ,則較容易將該層整合於製造半導體裝置的整個製程中。 可用以製造金屬層1 02之抗高溫材料的實施例包含鎢 、鉑、釕、鈀、鉬及鈮、以及由這些及其它元素形成的合 金。金屬層102可以替代地包括其它較不導電的金屬化合 物。這些化合物包含例如碳化鈦、碳化鉻、碳化鉅、及碳 化鎢等金屬碳化物、例如氮化鈦及氮化鉅等金屬氮化物、 以及例如氧化釕等導電的金屬氧化物。 雖然金屬層1 〇 2較佳地包括可以承受高溫退火製程之 材料,但是,金屬層可以包括其它材料,舉例而言,鋁、 鈦、或鉅。雖然此處說明一些可以用以形成金屬層1 〇 2的 材料實施例,但是,該層可以由很多其它材料製成。本申 請案中所使用的「金屬層」一詞包含任何可以衍生金屬閘 極電極(舉例而言,未包含有意義含量的矽或多晶矽之閘 極電極)之導電材料。 使用習知的原子層CVD製程等習知的CVD或PVD 製程,在介電層1 0 1上形成金屬層1 0 2,且較佳的是在約 5 0埃與約2,0 0 0埃厚之間。當形成金屬層1 〇 2時,可以將 (5) 1234880 摻雜劑加至其中。舉例而言,當使用c v D製程以製造層 1 0 2時,摻雜劑可以隨著層]〇 2被沈積時整合於其中。由 於導入層1 〇2中之摻雜劑的量會視沈積溫度而變,所以, 能夠藉由改變溫度而改變摻雜劑程度。舉例而言,降低沈 積溫度可以造成添加至金屬層1〇2之氯的數量增加。所造 成的摻雜劑濃度也會受包含於饋送至CVD反應器中的製 程氣體中的元素型式及數量影響。 當沈積時被摻雜的金屬層係落在本申請案中所使用的 「金屬層」一詞之定義內。由於習於此技藝者熟悉可以用 以在介電層1 0 1上形成金屬層1 02之設備、材料、及程序 ,所以,將不提供關於此製程步驟的其它細節。 當沈積時,假使金屬層1 〇 2缺乏可接受的功函數,則 其不適於形成閘極電極。在本發明的本實施例中,雜質會 添加至金屬層102以偏移其功函數。這些雜質可以包括加 至金屬層102時可以升高或降低其功函數之一或更多元表 。在較佳實施例中,充份數量的該元素或這些元素會加至 層1 0 2以使該層的功函數偏移至少約〇 · 1 e v。當從層1 0 2 形成N Μ 0 S電晶體時,應使用具有相當低的陰電度之元素 ’舉例而言,陰電度値小於約1 . 7。當形成ρ μ Ο S電晶體 時,應使用具有大於約2 · 8之相當大的陰電度値之元素。 圖2提供圖表,顯示材料的功函數與陰電度之比例。 將顯著數量之具有相當高的陰電度之材料加至金屬層102 將升局金屬層]0 2的功函數,將顯著數量之具有相當低的 陰電度之材料加至金屬層1 02將降低金屬層I 02的功函數 -9- 1234880 _ (6) 。從此圖表中淸楚可知,可以降低中間能帶隙膜(舉例而 言,具有約4.3 eV與約4.9 eV之間的功函數之膜)的功 函數以使其適於形成N Μ 0 S閘極電極之元素包含:鑭系元 素、銃、鍩、飴、鋁、鈦、鉅 '鈮、及鎢。其它潛在可使 用的元素包含鹼金屬及鹼土金屬。鋁及鈽可以是降低金屬 層1 02的功函數之特別較佳的元素。可以增加中間能帶隙 膜的功函數以使其適於形成PMOS閘極電極之元素包含: 氮、氯、氧、氟、及溴。氯可以是升高金屬層102的功函 數之特別較佳的元素。 最佳地作爲升高或降低金屬層1 02的功函數至所需位 準之元素將視金屬層1 02的成份及特性而定。甚至具有低 至2 · 2的陰電度値之元素(舉例而言,鉑、鈀、釕、及碘 )可以升高某些金屬層的功函數。雖然此處指明可以偏移 金屬層I 02的功函數之一些元素的實施例,但是,可以使 用其它元素作爲替代。本發明的製程如此思及使用可以用 以修改金屬層1 02的功函數之任何元素。可以視應用而決 定添加單一元素至層102、或是取代地添加多個元素。 使用任何習知的摻雜製程,將上述指明的功函數偏移 元素加至金屬層1 02。這些製程的實施例包含離子佈植、 電漿增強離子佈植、爐擴散、及電漿沈積。這些元素也可 以藉由首先沈積含有它們的膜至金屬層1〇2的表面,再接 著使形成該膜的材料擴散至金屬層1 02,而加至金屬層 1 02。圖1 c顯示使用離子佈植製程以將功函數偏移元素導 入金屬層1 〇2。由於習於此技藝者熟悉用以添加這些元素 -10- 1234880 _ (7) 至金屬層1 02之設備、材料、及步驟,所以,省圖關於此 製程步驟的其它細節。 添加至金屬層1 〇 2以偏移其功函數至目標位準之雜質 的最佳濃度將視層1 〇 2的成份及特性(包含初始功函數) 、所使用的雜質型式、及目標功函數而定。將金屬層1 0 2 的功函數從4.3 eV偏移至4.2 eV (舉例而言,將層]〇2 修改成用於NMOS應用)所需之第一雜質的數量將非常可 能實質上小於將功函數從4.3 eV偏移至5.0 eV (舉例而 言,將層102修改成用於PMOS應用)所需之第二雜質的 數量。在大部份的應用中,添加適當的元素至金屬層102 直到它包括所造成之含雜質的金屬層的約3與約5 0原子 百分比之間爲止,將足以偏移功函數至可接受程度。在很 多應用中,添加雜質直到它包括所造成的層之約 5至約 2 0原子百分比之間爲止,應已足夠。 在雜質加至層1 〇 2之後,如圖1 d所示般,可以使用 習知的技術以蝕刻該層及層1 〇 1,形成金屬閘極電極]〇3 。習於此技藝者熟知用於完成電晶體之後續步驟,舉例而 言,形成源極和汲極區、以及裝置的接點,所以,此處不 會更詳細說明。 圖3 a- 3 d代表當執行本發明的方法之第二實施例時可 形成的結構之剖面。在本實施例中,使用本發明的方法以 形成具有NMOS及PMOS電晶體之 CMOS裝置,這些 NMOS及PMOS電晶體具有可接受的功函數。 在介電層2 0 1上形成金屬層2 02之後(舉例而言,使 -11 - (8) 1234880 用上述材料及製程步驟),金屬層2 0 2的部份2 1 0會由例 如:A:阻2 1 5掩罩’產生圖3 a結構。在較佳實施例中,金 屬層具有約4.3 eV至約4 · 9 eV之間的功函數。將產生用 於C Μ〇S裝置之p Μ 0 S電晶體,其中,金屬層2 0 2被掩罩 ’並且,將產生用於CMOS裝置的NMOS電晶體,其中 ’金屬層202維持曝露。在掩罩部份21 0之後,如同圖 3 b所示般,將雜質添加至金屬層2 0 2的曝露部份2丨】。雜 質包括上述指明之一或更多元素,且可以使用前述任何製 程以將雜質加至金屬層2 02。 當形成金屬層2 0 2曝露的N Μ 0 S電晶體時,應選取使 金屬層2 02的功函數偏移至適於NMOS電晶體的金屬閘極 電極之位準的元素。在較佳實施例中,充份數量的第一元 素應添加至金屬層2 02的曝露部份2 1 1以降低該層的第一 部份之功函數至約 4.0 eV至約 4.2 eV之間。適用於 NMOS電晶體製造之元素已於上述中說明。 在以使金屬層202的曝露部份2 1 1之功函數偏移至適 用於NMOS電晶體之位準之元素摻雜該部份之後,部份 211會被掩罩(例如由光阻2]6掩罩)且部份210會曝露 。在掩罩部份2 1 1之後,如圖3 c所示般,將雜質加至曝 露部份210。當形成金屬層202曝露之PMOS電晶體時, 應選取將使金屬層2 02的功函數偏移至適於PMOS電晶體 的金屬聞極電極之位準的元素。在較佳實施例中,充份數 量的第二元素應添加至金屬層2 02的曝露部份2 1 0以升高 該層的該第二部份之功函數至約5.0 eV與約5.2 Εν之間 -12 - (9) 1234880 。適用於PMOS電晶體製造的元素已於上述說明。 金屬層的不同部份被摻雜之次序並不重要。如同所示 ,在金屬層2 02的第二部份被具有相當高陰電度値的元素 摻雜之則’金屬層2 0 2的第一部份可以由具有相當低的陰 電度値之元素摻雜。但是,本發明的本實施例也思及金屬 層2 02的第二部份由具有相當低的陰電度値之元素摻雜之 前,層2 02的第一部份由具有相當高的陰電度値之元素摻 雜之製程。 如上所述,添加至金屬層2 020以適當地降低該層的 第一部份之功函數及增加該層的第二部份之功函數之雜質 的最佳濃度將取決於層202的成份及特性、所使用的雜質 型式、及目標功函數。在大部份的應用中,將雜質添加至 金屬層直到它們包括所造成的含有雜質的金屬層之第一及 第二部份的約3至約5 0原子百分比之間爲止,則應已足 夠。 已發現藉由添加充份數量的鋁以產生包含約1 1原子 百分比的鋁之層,可使碳化鈦金屬層的第一部份之功函數 (具有約4.5 e V的功函數)偏移至約4 · 2 e V的値。藉由 添加充份數量的氯以產生包含約]2原子百分比的氯之層 ,可使此金屬層的第二部份之功函數偏移至約5 ·] e V的 値。 在金屬層202的不同部份之功函數偏移至能夠從金屬 層2 02衍生出具有可接受的電特性之用於NM0S及PM0S 電晶體的閘極電極之後,可以蝕刻金屬層202及介電層 -13 - 1234880 (10) 2 0 ],產生圖3 d結構。該結構將包含具有適用於 晶體的功函數之 NMOS閘極電極 220、及具 P Μ 0 S電晶體的功函數之ρ μ 0 S閘極電極2 3 0。 此技藝者熟悉完成Ν Μ Ο S及ρ Μ Ο S電晶體的步驟 省略這些步驟的進一步說明。 本發明的方法使得單一金屬層能夠以不同雜 舉例而言,具有相當高或相當低的陰電度値之雜 論閘極電極是形成Ν Μ Ο S或Ρ Μ 0 S閘極電極,允 極由具有最佳功函數之層製成。上述方法能夠 NMOS和PMOS電晶體之具有適當功函數的金屬 之C Μ Ο S裝置,而不須執行雙閘極電極製程所需 昂貴的製程步驟。 雖然上述實施例提供製程實施例以修改金屬 用於製造具有可接受的功函數之NMOS及PMOS ’但是’本發明不限於這些特別實施例,而是涵 屬層以使其能夠被以此方式使用之其它製程。 除了上述這些方法之外,申請人之發明也涵 電層101及金屬閘極電極103之半導體裝置,介 係形成於基底〗〇 〇之上,金屬閘電極1 0 3係形成 1 01上。如上所述,金屬閘極電極103包含足夠 質以使其功函數偏移至約0 . 1 e V。用於此半導體 屬聞極電極可以作爲用於NMOS電晶體之鬧極電 情形中,雜質較佳地爲具有小於約1 · 7的陰電度 。當金屬閘極電極作爲用於PMOS電晶體的閘極 NMOS 電 有適用於 由於習於 ,所以, 質修改( 質),不 許閘極電 製造包含 閘極電極 之複雜及 層至能夠 閘極電極 蓋修改金 蓋包括介 電層1 01 於介電層 數量的雜 裝置的金 極。在該 値之元素 電極時, -14 - (11 ) 1234880 雜質較佳地是具有大於約2.8的陰電度之元素。而且,如 上所述,雜質較佳地以約3至約5 0原子百分比的濃度呈 現在金屬閘極電極中。 當半導體裝置包括CMOS電晶體時,其將包含第一金 屬閘極電極及第二金屬閘極電極。第一金屬閘極電極較佳 地包含充份數量的第一元素以降低第一金屬閘極電極的功 函數至少約〇 ·] eV,第二金屬閘極電極較佳地包含充份數 量的第二元素以升高第二金屬閘極電極的功函數至少約 0 . 1 e V。當第一金屬閘極電極作爲用於n Μ 0 S電晶體的閘 極電極時’第一元素較佳地具有小於約1 . 7之陰電度値。 當第二金屬閘極電極作爲用於Ρ Μ 0 S電晶體的閘極電極時 ’第二元素較佳地具有大於約2.8之陰電度値。 雖然可使用上述詳細揭示之製程,製造本申請案中所 述及申請專利範圍之半導體裝置,但是,可以使用其它型 式的製程以替代地形成該半導體裝置。因此,本發明的半 導體裝置不限於使用上述製程製造的裝置。 雖然前述說明已指明可以用於本發明中的某些步驟及 材料’但是’習於此技藝者瞭解可以達成很多修改及替代 。因此,所有這些修改、替代、取代及添加係被視爲落在 後附的申請專利範圍所界定的發明之精神及範圍之內。 【圖式簡單說明】 圖1 a- I d是代表執行本發明的方法之一實施例時形成 的結構之剖面。 -15- (12) 1234880 圖2提供圖表,顯示不同元素的功函數與其陰電度的 比例。 圖3 a-3 d代表執行本發明的方法之第二實施例時形成 的結構之剖面。 這些圖式中所顯示的特徵並未依比例繪製。 【主要元件對照表】
1 00 基底 10 1 介電層 1 02 金屬層 10 3 金屬閘極電極 20 1 介電層 202 金屬層 2 10 金屬層的部份 2 11 金屬層的曝露部份
2 15 光阻 2 16 光阻 2 2 0 Ν Μ Ο S鬧極電極 2 3 0 Ρ Μ Ο S閘極電極 -16 -
Claims (1)
1234880 Π) 拾、申請專利範圍 1 · 一種半導體裝置的製造方法,包括·· 在基底上形成介電層; 在該介電層上形成含雜質之金屬層;及 接著從該含雜質之金屬層形成金屬閘極電極。 2 ·如申請專利範圍第]項之方法,其中,該介電層包 括高k閘極介電層。 3 ·如申請專利範圍第2項之方法,其中,該高k閘極 介電層係由原子層化學汽相沈積所形成,以及包括選自氧 化給、飴矽氧化物、氧化鑭、氧化鉻、鉻矽氧化物、氧化 鈦、氧化鉅、鋇緦鈦氧化物、鋇鈦氧化物、鋸鈦氧化物、 氧化釔、氧化鋁、鉛銃鉅氧化物、及鈮酸鉛鋅所組成的族 群之材料。 4.如申請專利範圍第1項之方法,其中,該含雜質之 金屬層可以承受超過約9 0 0。C的溫度。 5 ·如申請專利範圍第2項之方法,其中,該含雜質之 金屬層包括選自鎢、鉑、釕、鈀、鉬、及鈮、以及其合金 、金屬碳化物、金屬氮化物、和導電金屬碳化物所組成的 族群之材料。 6.如申請專利範圍第5項之方法,其中,該含雜質之 金屬層包括選自碳化鈦、碳化锆、碳化鉅、碳化鎢、氮化 鈦、氮化鉅、及氧化釕所組成的族群之材料。 7 ·如申請專利範圍第1項之方法,其中,該含雜質之 金屬層係藉由下述形成: -17- (2) 1234880 形成具有約4.3 eV至約4.9 eV之間的功函數之金屬 層;及 接著將充份數量的元素添加至該金屬層以使該金屬層 的功函數偏移至少約0 . 1 e V。 8 ·如申請專利範圍第7項之方法,其中,該金屬閘極 電極將作爲NMOS電晶體之閘極電極,其中,該元素具有 小於約1 . 7之陰電度値。 9·如申s靑專利範圍桌8項之方法,其中,該元素是選 自鋼系金屬、驗金屬、驗土金屬、統、銷、鈴、銘、欽、 鉅、鈮、及鎢所組成的族群。 10.如申請專利範圍第9項之方法,其中,該元素是 鋁。 1 1 ·如申請專利範園第7項之方法,其中,該金屬閘 極電極將作爲PMOS電晶體之閘極電極,其中,該元素具 有大於約2.8之陰電度値。 ]2 ·如申請專利範圍第1 1項之方法,其中,該元素是 選自氮、氯、氧、氟、及溴所組成的族群。 1 3 .如申請專利範圍第1 2項之方法,其中,該元素是 氯。 1 4 .如申請專利範圍第7項之方法,其中,將該元素 添加至該金屬層直至其包括該含雜質之金屬層之約3至約 5 0原子百分比之間爲止。 1 5 · —種互補金氧半導體電晶體之製造方法,包括: 在基底上形成高k閘極介電層;及 -18 - (3) 1234880 在該高k閘極介電層上形成含雜質之金屬層 其中,該含雜質之金屬層的第一部份包含充 第一元素以降低該金屬層的功函數,及其中,該 金屬層的第二部份包含充份數量的第二元素以升 層的功函數。 1 6 ·如申請專利範圍第1 5項之方法,又包括 質的金屬層之第一部份形成用於NMOS電晶體之 ,以及從該含雜質的金屬層之第二部份形成用於 晶體之閘極電極,其中,該第一元素具有小於約 電度値,該第二元素具有大於約2 · 8的陰電度値 1 7 ·如申請專利範圍第1 5項之方法,其中, 的金屬層係藉由下述形成: 形成具有約4·3 eV至約4·9 eV之間的功函 層;及 接著將充份數量的第一元素添加至該金屬層 份以使該金屬層的功函數降低至約4 · 0 e V至約l 間,以及 將充份數量的第二元素添加至該金屬層的第 使該金屬層的功函數升高至約5.0 eV至約5 2 eV 1 8 .如申請專利範圍第1 7項之方法,其中, 層的第二部份被掩罩時,將第一元素添加至該金 一部份,以及當該金屬層的第一部份被掩章時, 素添加至該金屬層的第二部份。 1 9 .如申請專利範圍第1 8項之方法,其中, 份數量的 含雜質之 高該金屬 從該含雜 閘極電極 PMOS 電 1 . 7的陰 〇 該含雜質 數之金屬 的第一部 1.2 eV 之 二部份以 之間。 當該金屬 屬層的第 將第二元 該第一元 ^ 19- (4) 1234880 素是選自鑭系金屬、銃、錐、鈴、銘、鈦、鉬、鈮、及鶴 所組成的族群’該第二元素是選自氮、氯、氧、氟 '及溴 所組成的族群。 20. 如申請專利範圍第19項之方法,其中,將該第一 元素添加至該金屬層直至其包括該含雜質的金屬層之第一 部份的約3至約5 0原子百分比之間爲止,以及,將該第 二元素添加至該金屬層直至其包括該含雜質的金屬層之第 二部份的約3至約5 0原子百分比之間爲止。 21. —種半導體裝置,包括: 介電層,形成於基底上;及 金屬閘極電極,形成於該介電層上; 其中,該金屬閘極電極包含充份數量的雜質以使金屬 閘極電極的功函數偏移至少約0 . 1 e V。 22. 如申請專利範圍第21項之半導體裝置,其中,該 介電層包括高k閘極介電層。 2 3 .如申請專利範圍第2 2項之半導體裝置,其中,該 高k閘極介電層係以原子層化學汽相沈積形成,以及包括 選自氧化給、飴矽氧化物、氧化鑭、氧化鉻、鉻矽氧化物 、氧化鈦、氧化鉅、鋇緦鈦氧化物、鋇鈦氧化物、總駄氧 化物、氧化纪、氧化銘、錯钪钽氧化物、及銳酸錯鋅所組 成的族群之材料。 24·如申請專利範圍第21項之半導體裝置,其中,該 金屬閘極電極作爲NMOS電晶體之閘極電極,以及,其中 ,該雜質是具有小於約1 . 7的陰電度値之元素。 -20- (5) 1234880 2 5 .如申請專利範圍第24項之半導體裝置,其中,該 元素是選自鑭系金屬、鹼金屬、鹼土金屬、銃、銷、鈴、 錦、鈦、鉅、鈮、及鎢所組成的族群。 2 6 .如申請專利範圍第2 1項之半導體裝置,其中,該 金屬閘極電極作爲PMOS電晶體之閘極電極,以及,其中 ,該雜質是具有大於約2.8的陰電度値之元素。 2 7 ·如申請專利範圍第2 6項之半導體裝置,其中,該 元素是選自氮、氯、氧、氟、及溴所組成的族群。 2 8 .如申請專利範圍第2 1項之半導體裝置,其中,該 雜質係以約3至約5 0原子百分比的濃度存在該金屬閘極 電極中。 29·如申§靑專利範圍第21項之半導體裝置,其中,該 金屬閘極是第一金屬閘極電極及又包括第二金屬閘極電極 •,以及,其中,該第一金屬閘極電極包含充份數量的第一 元素以使該第一金屬閘極電極的功函數降低至少約〇 . 1 eV ,以及,該第二金屬閘極電極包含充份數量的第二元素以 使該第二金屬閘極電極的功函數升高至少約0.1 eV。 30.如申請專利範圍第29項之半導體裝置,其中: 該第一金屬閘極電極作爲Ν Μ Ο S電晶體的閘極電極; 該第一元素具有小於約} ·7的陰電度値,選自鑭系金 屬、銃、鉻、飴 '鋁、鈦、鉅、鈮、及鎢所組成的族群, 以及,以約3至約5 0原子百分比的濃度存在該第一金屬 閘極電極中; 該第二金屬閘極電極作爲ρ Μ 0 S電晶體的閘極電極; -21 - (6) 1234880 及 該第二元素具有大於約2.8的陰電度値,選自氮、氯 、氧、氟、及溴所組成的族群,以及,以約3至約5 0原子 百分比的濃度存在該第二金屬閘極電極中。 -22-
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AU2003304143A1 (en) | 2004-12-13 |
CN1551300A (zh) | 2004-12-01 |
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US20050158974A1 (en) | 2005-07-21 |
US6890807B2 (en) | 2005-05-10 |
US7420254B2 (en) | 2008-09-02 |
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WO2004105138A1 (en) | 2004-12-02 |
EP1620898A1 (en) | 2006-02-01 |
US20040222474A1 (en) | 2004-11-11 |
KR100738711B1 (ko) | 2007-07-12 |
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