TWI232240B - Aluminum alloy thin film - Google Patents

Aluminum alloy thin film Download PDF

Info

Publication number
TWI232240B
TWI232240B TW091118779A TW91118779A TWI232240B TW I232240 B TWI232240 B TW I232240B TW 091118779 A TW091118779 A TW 091118779A TW 91118779 A TW91118779 A TW 91118779A TW I232240 B TWI232240 B TW I232240B
Authority
TW
Taiwan
Prior art keywords
film
aluminum alloy
thin film
aluminum
carbon
Prior art date
Application number
TW091118779A
Other languages
English (en)
Chinese (zh)
Inventor
Takashi Kubota
Hiroshi Watanabe
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Application granted granted Critical
Publication of TWI232240B publication Critical patent/TWI232240B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
TW091118779A 2001-09-18 2002-08-20 Aluminum alloy thin film TWI232240B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001283306A JP2003089864A (ja) 2001-09-18 2001-09-18 アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材

Publications (1)

Publication Number Publication Date
TWI232240B true TWI232240B (en) 2005-05-11

Family

ID=19106811

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091118779A TWI232240B (en) 2001-09-18 2002-08-20 Aluminum alloy thin film

Country Status (6)

Country Link
US (1) US20040022664A1 (https=)
JP (1) JP2003089864A (https=)
KR (1) KR20030048141A (https=)
CN (1) CN100507068C (https=)
TW (1) TWI232240B (https=)
WO (1) WO2003029510A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI826799B (zh) * 2020-06-30 2023-12-21 日商愛發科股份有限公司 金屬配線構造體以及金屬配線構造體的製造方法

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1685078A (zh) * 2002-06-07 2005-10-19 黑罗伊斯有限公司 可延展的金属间溅射靶的制造方法
JP4886285B2 (ja) * 2002-12-19 2012-02-29 株式会社神戸製鋼所 表示デバイス
JP3940385B2 (ja) 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP4390260B2 (ja) * 2004-02-16 2009-12-24 三井金属鉱業株式会社 高耐熱性アルミニウム合金配線材料及びターゲット材
CN100417993C (zh) * 2004-03-25 2008-09-10 三井金属鉱业株式会社 薄膜电路的接合结构
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
JP4849821B2 (ja) * 2004-04-28 2012-01-11 株式会社半導体エネルギー研究所 表示装置、電子機器
JP4761425B2 (ja) * 2004-05-12 2011-08-31 株式会社 日立ディスプレイズ 表示装置および表示装置の製造方法
JP4731996B2 (ja) * 2004-05-20 2011-07-27 株式会社半導体エネルギー研究所 発光素子及び表示装置
US8018152B2 (en) 2004-05-20 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including intermediate conductive layer having a hole-injection layer with an island-like structure
JP4741286B2 (ja) * 2004-06-11 2011-08-03 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7550769B2 (en) 2004-06-11 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and semiconductor device
KR100778429B1 (ko) * 2004-07-09 2007-11-21 미쓰이 긴조꾸 고교 가부시키가이샤 스퍼터링 타깃재
US8008651B2 (en) 2004-08-03 2011-08-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
US7417249B2 (en) * 2004-08-20 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a wiring including an aluminum carbon alloy and titanium or molybdenum
JP4974493B2 (ja) * 2004-08-20 2012-07-11 株式会社半導体エネルギー研究所 半導体装置及び電子機器
CN101032040B (zh) 2004-09-30 2012-05-30 株式会社半导体能源研究所 发光元件和发光设备
US7682782B2 (en) * 2004-10-29 2010-03-23 Affymetrix, Inc. System, method, and product for multiple wavelength detection using single source excitation
JP4689439B2 (ja) * 2004-11-04 2011-05-25 株式会社半導体エネルギー研究所 発光装置
US20060091397A1 (en) * 2004-11-04 2006-05-04 Kengo Akimoto Display device and method for manufacturing the same
US8003449B2 (en) 2004-11-26 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a reverse staggered thin film transistor
JP5036173B2 (ja) * 2004-11-26 2012-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP2006236839A (ja) * 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
EP1878809B1 (en) 2005-04-26 2011-02-23 Mitsui Mining and Smelting Co., Ltd. ELEMENT STRUCTURE USING A Al-Ni-B ALLOY WIRING MATERIAL
WO2006117884A1 (ja) * 2005-04-26 2006-11-09 Mitsui Mining & Smelting Co., Ltd. Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
JP4728170B2 (ja) * 2006-05-26 2011-07-20 三菱電機株式会社 半導体デバイスおよびアクティブマトリクス型表示装置
JP5234892B2 (ja) * 2006-05-31 2013-07-10 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP4180102B2 (ja) 2006-10-16 2008-11-12 三井金属鉱業株式会社 反射膜用Ａｌ−Ｎｉ−Ｂ合金材料
CN101542010A (zh) * 2007-03-28 2009-09-23 三井金属鉱业株式会社 Al-Ni-B系合金溅射靶材
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5215620B2 (ja) * 2007-09-12 2013-06-19 三菱電機株式会社 半導体デバイス、表示装置及び半導体デバイスの製造方法
JP2009076536A (ja) 2007-09-19 2009-04-09 Mitsubishi Electric Corp Ａｌ合金膜、電子デバイス及び電気光学表示装置用アクティブマトリックス基板
JP2009111201A (ja) * 2007-10-31 2009-05-21 Mitsubishi Electric Corp 積層導電膜、電気光学表示装置及びその製造方法
US20100328247A1 (en) * 2008-02-22 2010-12-30 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Touch panel sensor
US9280025B2 (en) 2009-03-18 2016-03-08 Unified Innovative Technology, Llc Active matrix substrate and display device
JP5177570B2 (ja) * 2009-09-15 2013-04-03 日本精機株式会社 有機ｅｌパネルの製造方法
JP5687133B2 (ja) 2010-11-05 2015-03-18 三菱電機株式会社 半導体装置及び表示装置
JP2012186199A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光装置およびその製造方法
CN104583452B (zh) 2012-08-22 2017-07-21 Jx日矿日石金属株式会社 铟制圆筒型溅射靶及其制造方法
CN102899533A (zh) * 2012-10-29 2013-01-30 熊科学 一种铝合金薄膜
CN102912195A (zh) * 2012-10-29 2013-02-06 熊科学 一种用于液晶显示器配线铝合金薄膜
WO2015004958A1 (ja) * 2013-07-08 2015-01-15 Jx日鉱日石金属株式会社 スパッタリングターゲット及び、それの製造方法
CN104962871B (zh) * 2015-05-25 2018-04-27 同济大学 一种高导电性铝合金薄膜及其制备方法
CN105296813A (zh) * 2015-11-03 2016-02-03 任静儿 一种用于液晶显示器配线铝合金

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532106A (en) * 1980-07-31 1985-07-30 Inco Alloys International, Inc. Mechanically alloyed dispersion strengthened aluminum-lithium alloy
US4600556A (en) * 1983-08-08 1986-07-15 Inco Alloys International, Inc. Dispersion strengthened mechanically alloyed Al-Mg-Li
JPS60187656A (ja) * 1984-03-05 1985-09-25 Sumitomo Light Metal Ind Ltd 耐食性に優れた包装用アルミニウム合金板及びその製造方法
US4758273A (en) * 1984-10-23 1988-07-19 Inco Alloys International, Inc. Dispersion strengthened aluminum alloys
GB2182348B (en) * 1985-09-13 1989-08-23 Nippon Dia Clevite Co Aluminium alloy and its use in a two-layer bearing material
JPS62240738A (ja) * 1986-04-11 1987-10-21 Nippon Mining Co Ltd 半導体配線材料用ｎ、ｃ含有アルミニウム合金
DE3783405T2 (de) * 1986-08-19 1993-08-05 Fujitsu Ltd Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben.
US5019891A (en) * 1988-01-20 1991-05-28 Hitachi, Ltd. Semiconductor device and method of fabricating the same
US4834810A (en) * 1988-05-06 1989-05-30 Inco Alloys International, Inc. High modulus A1 alloys
US5240521A (en) * 1991-07-12 1993-08-31 Inco Alloys International, Inc. Heat treatment for dispersion strengthened aluminum-base alloy
US5296676A (en) * 1993-05-20 1994-03-22 Allied-Signal Inc. Welding of aluminum powder alloy products
US6673309B1 (en) * 1994-02-16 2004-01-06 Corrpro Companies, Inc. Sacrificial anode for cathodic protection and alloy therefor
JP2917820B2 (ja) * 1994-07-25 1999-07-12 株式会社神戸製鋼所 半導体装置用電極又は配線材料
USRE41975E1 (en) * 1995-10-12 2010-11-30 Kabushiki Kaisha Toshiba Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
JP3606451B2 (ja) * 1996-11-14 2005-01-05 日立金属株式会社 Ａｌ系電極膜の製造方法
JP3365954B2 (ja) * 1997-04-14 2003-01-14 株式会社神戸製鋼所 半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜および半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜形成用スパッタリングターゲット
CN1138011C (zh) * 1999-08-19 2004-02-11 三井金属鉱业株式会社 铝合金薄膜及靶材和使用它的薄膜形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI826799B (zh) * 2020-06-30 2023-12-21 日商愛發科股份有限公司 金屬配線構造體以及金屬配線構造體的製造方法

Also Published As

Publication number Publication date
CN100507068C (zh) 2009-07-01
JP2003089864A (ja) 2003-03-28
WO2003029510A1 (fr) 2003-04-10
KR20030048141A (ko) 2003-06-18
CN1479802A (zh) 2004-03-03
US20040022664A1 (en) 2004-02-05

Similar Documents

Publication Publication Date Title
TWI232240B (en) Aluminum alloy thin film
JP2733006B2 (ja) 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
US6096438A (en) A1-N1-Y alloy films for electrodes of semiconductor devices and sputtering targets for depositing the A1-N1-Y alloy films
TWI248978B (en) Ag-based interconnecting film for flat panel display, Ag-base sputtering target and flat panel display
CN102741449B (zh) 显示装置用Al合金膜
JP2006100822A (ja) 液晶表示装置の製造方法
TW200830558A (en) Al alloy film for display device, display device, and sputtering target
JP2010065317A (ja) 表示装置およびこれに用いるＣｕ合金膜
US6686661B1 (en) Thin film transistor having a copper alloy wire
WO2006117954A1 (ja) Ａｌ－Ｎｉ－Ｂ合金配線材料及びそれを用いた素子構造
WO2003098641A1 (fr) Materiau de cablage et tableau de connexions mettant en oeuvre ce materiau
JPH0790552A (ja) Ａｌ合金薄膜及びその製造方法並びにＡｌ合金薄膜形成用スパッタリングターゲット
TWI247812B (en) Aluminum alloy film for wiring and sputter target material for forming the film
JP5420964B2 (ja) 表示装置およびこれに用いるＣｕ合金膜
CN101828212A (zh) 显示装置及该显示装置使用的Cu合金膜
JP2005054273A (ja) ターゲット材の製造方法
TWI378471B (en) Electronic device, and active matrix substrate for use in electrooptic display device
JP4264397B2 (ja) フラットパネルディスプレイ用Ａｇ基合金配線電極膜およびＡｇ基合金スパッタリングターゲット、並びにフラットパネルディスプレイ
KR100666906B1 (ko) 고내열성 알루미늄 합금 배선 재료 및 타겟재
JP3061654B2 (ja) 液晶ディスプレイ用半導体装置材料及び液晶ディスプレイ用半導体装置材料製造用溶製スパッタリングターゲット材料
JPH10270446A (ja) 多層配線層および金属配線層の形成方法
JP2006179881A (ja) 配線・電極及びスパッタリングターゲット
JP2809523B2 (ja) 耐熱性に優れた液晶ディスプレイ用配線電極薄膜材料
JP2006196521A (ja) 積層配線膜
JPH01275753A (ja) スパッタリングターゲット

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees