TWD208387S - 半導體製造裝置用反應管之內管 - Google Patents

半導體製造裝置用反應管之內管 Download PDF

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Publication number
TWD208387S
TWD208387S TW108305507F TW108305507F TWD208387S TW D208387 S TWD208387 S TW D208387S TW 108305507 F TW108305507 F TW 108305507F TW 108305507 F TW108305507 F TW 108305507F TW D208387 S TWD208387 S TW D208387S
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TW
Taiwan
Prior art keywords
semiconductor manufacturing
manufacturing equipment
inner tube
reaction tube
tube
Prior art date
Application number
TW108305507F
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English (en)
Chinese (zh)
Inventor
加賀谷徹
梅川純史
Original Assignee
日商國際電氣股份有限公司
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Application filed by 日商國際電氣股份有限公司 filed Critical 日商國際電氣股份有限公司
Publication of TWD208387S publication Critical patent/TWD208387S/zh

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TW108305507F 2019-03-20 2019-09-11 半導體製造裝置用反應管之內管 TWD208387S (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-005924 2019-03-20
JP2019005924F JP1644260S (ko) 2019-03-20 2019-03-20

Publications (1)

Publication Number Publication Date
TWD208387S true TWD208387S (zh) 2020-11-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108305507F TWD208387S (zh) 2019-03-20 2019-09-11 半導體製造裝置用反應管之內管

Country Status (3)

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US (1) USD901406S1 (ko)
JP (1) JP1644260S (ko)
TW (1) TWD208387S (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
JP1731673S (ko) 2022-05-30 2022-12-08
JP1731675S (ko) 2022-05-30 2022-12-08
JP1731674S (ko) 2022-05-30 2022-12-08

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD193434S (zh) 2017-08-10 2018-10-11 日商日立國際電氣股份有限公司 Reaction tube

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JPH08264521A (ja) * 1995-03-20 1996-10-11 Kokusai Electric Co Ltd 半導体製造用反応炉
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USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
USD404368S (en) * 1997-08-20 1999-01-19 Tokyo Electron Limited Outer tube for use in a semiconductor wafer heat processing apparatus
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JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
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JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
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TWD133943S1 (zh) * 2008-05-09 2010-03-21 日立國際電氣股份有限公司 反應管
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD724551S1 (en) * 2011-11-18 2015-03-17 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
TWD167986S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
TWD168774S (zh) * 2013-06-28 2015-07-01 日立國際電氣股份有限公司 反應管之部分
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
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JP1535455S (ko) * 2015-02-25 2015-10-19
JP1546345S (ko) * 2015-09-04 2016-03-22
JP1546512S (ko) * 2015-09-04 2016-03-22
JP1563524S (ko) * 2016-03-30 2016-11-21
JP1605460S (ko) * 2017-08-09 2021-05-31
JP1605982S (ko) * 2017-12-27 2021-05-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD193434S (zh) 2017-08-10 2018-10-11 日商日立國際電氣股份有限公司 Reaction tube

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Publication number Publication date
JP1644260S (ko) 2019-10-28
USD901406S1 (en) 2020-11-10

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