KR890008922A
(ko)
*
|
1987-11-21 |
1989-07-13 |
후세 노보루 |
열처리 장치
|
JP3024449B2
(ja)
*
|
1993-07-24 |
2000-03-21 |
ヤマハ株式会社 |
縦型熱処理炉及び熱処理方法
|
JPH08264521A
(ja)
*
|
1995-03-20 |
1996-10-11 |
Kokusai Electric Co Ltd |
半導体製造用反応炉
|
USD405429S
(en)
*
|
1997-01-31 |
1999-02-09 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus
|
USD406113S
(en)
*
|
1997-01-31 |
1999-02-23 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus
|
USD417438S
(en)
*
|
1997-01-31 |
1999-12-07 |
Tokyo Electron Limited |
Quartz outer tube
|
USD424024S
(en)
*
|
1997-01-31 |
2000-05-02 |
Tokyo Electron Limited |
Quartz process tube
|
USD423463S
(en)
*
|
1997-01-31 |
2000-04-25 |
Tokyo Electron Limited |
Quartz process tube
|
USD405431S
(en)
*
|
1997-08-20 |
1999-02-09 |
Tokyo Electron Ltd. |
Tube for use in a semiconductor wafer heat processing apparatus
|
USD404368S
(en)
*
|
1997-08-20 |
1999-01-19 |
Tokyo Electron Limited |
Outer tube for use in a semiconductor wafer heat processing apparatus
|
USD405062S
(en)
*
|
1997-08-20 |
1999-02-02 |
Tokyo Electron Ltd. |
Processing tube for use in a semiconductor wafer heat processing apparatus
|
US5948300A
(en)
*
|
1997-09-12 |
1999-09-07 |
Kokusai Bti Corporation |
Process tube with in-situ gas preheating
|
JP2000243747A
(ja)
*
|
1999-02-18 |
2000-09-08 |
Kokusai Electric Co Ltd |
基板処理装置
|
KR100360401B1
(ko)
*
|
2000-03-17 |
2002-11-13 |
삼성전자 주식회사 |
슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
|
JP3985899B2
(ja)
*
|
2002-03-28 |
2007-10-03 |
株式会社日立国際電気 |
基板処理装置
|
JP4523225B2
(ja)
*
|
2002-09-24 |
2010-08-11 |
東京エレクトロン株式会社 |
熱処理装置
|
USD521464S1
(en)
*
|
2003-11-04 |
2006-05-23 |
Tokyo Electron Limited |
Process tube for semiconductor device manufacturing apparatus
|
USD521465S1
(en)
*
|
2003-11-04 |
2006-05-23 |
Tokyo Electron Limited |
Process tube for semiconductor device manufacturing apparatus
|
KR20080046722A
(ko)
*
|
2005-10-03 |
2008-05-27 |
투베마스터 인코포레이티드 |
화학적 반응기 튜브들을 로딩하는 장치
|
JP5157100B2
(ja)
*
|
2006-08-04 |
2013-03-06 |
東京エレクトロン株式会社 |
成膜装置及び成膜方法
|
USD600659S1
(en)
*
|
2006-09-12 |
2009-09-22 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers
|
USD586768S1
(en)
*
|
2006-10-12 |
2009-02-17 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers
|
JP5096182B2
(ja)
*
|
2008-01-31 |
2012-12-12 |
東京エレクトロン株式会社 |
熱処理炉
|
USD611013S1
(en)
*
|
2008-03-28 |
2010-03-02 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers
|
JP4930438B2
(ja)
*
|
2008-04-03 |
2012-05-16 |
東京エレクトロン株式会社 |
反応管及び熱処理装置
|
USD618638S1
(en)
*
|
2008-05-09 |
2010-06-29 |
Hitachi Kokusai Electric, Inc. |
Reaction tube
|
USD610559S1
(en)
*
|
2008-05-30 |
2010-02-23 |
Hitachi Kokusai Electric, Inc. |
Reaction tube
|
USD724551S1
(en)
*
|
2011-11-18 |
2015-03-17 |
Tokyo Electron Limited |
Inner tube for process tube for manufacturing semiconductor wafers
|
TWD168774S
(zh)
*
|
2013-06-28 |
2015-07-01 |
日立國際電氣股份有限公司 |
反應管之部分
|
TWD167986S
(zh)
*
|
2013-06-28 |
2015-05-21 |
日立國際電氣股份有限公司 |
反應管之部分
|
USD739832S1
(en)
*
|
2013-06-28 |
2015-09-29 |
Hitachi Kokusai Electric Inc. |
Reaction tube
|
TWD167987S
(zh)
*
|
2013-06-28 |
2015-05-21 |
日立國際電氣股份有限公司 |
反應管之部分
|
JP1535455S
(ja)
*
|
2015-02-25 |
2015-10-19 |
|
|
JP1546512S
(ja)
*
|
2015-09-04 |
2016-03-22 |
|
|
JP1546345S
(ja)
*
|
2015-09-04 |
2016-03-22 |
|
|
JP1563524S
(ja)
*
|
2016-03-30 |
2016-11-21 |
|
|
JP1605460S
(ja)
*
|
2017-08-09 |
2021-05-31 |
|
|
JP1605461S
(ja)
|
2017-08-10 |
2021-05-31 |
|
|
JP1605982S
(ja)
*
|
2017-12-27 |
2021-05-31 |
|
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