TW583732B - Substrate cleaning apparatus and substrate cleaning method - Google Patents

Substrate cleaning apparatus and substrate cleaning method Download PDF

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Publication number
TW583732B
TW583732B TW091124070A TW91124070A TW583732B TW 583732 B TW583732 B TW 583732B TW 091124070 A TW091124070 A TW 091124070A TW 91124070 A TW91124070 A TW 91124070A TW 583732 B TW583732 B TW 583732B
Authority
TW
Taiwan
Prior art keywords
substrate
cleaning
liquid
scope
patent application
Prior art date
Application number
TW091124070A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuo Nakajima
Masanobu Sato
Hiroaki Sugimoto
Akio Hashizume
Hiroki Tsujikawa
Original Assignee
Dainippon Screen Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Application granted granted Critical
Publication of TW583732B publication Critical patent/TW583732B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20—Mixing gases with liquids
    • B01F23/21—Mixing gases with liquids by introducing liquids into gaseous media
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20—Mixing gases with liquids
    • B01F23/29—Mixing systems, i.e. flow charts or diagrams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/30—Injector mixers
    • B01F25/31—Injector mixers in conduits or tubes through which the main component flows
    • B01F25/314—Injector mixers in conduits or tubes through which the main component flows wherein additional components are introduced at the circumference of the conduit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
TW091124070A 2001-11-02 2002-10-18 Substrate cleaning apparatus and substrate cleaning method TW583732B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001337738 2001-11-02
JP2002293790A JP3892792B2 (ja) 2001-11-02 2002-10-07 基板処理装置および基板洗浄装置

Publications (1)

Publication Number Publication Date
TW583732B true TW583732B (en) 2004-04-11

Family

ID=26624313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091124070A TW583732B (en) 2001-11-02 2002-10-18 Substrate cleaning apparatus and substrate cleaning method

Country Status (4)

Country Link
US (2) US7422641B2 (ko)
JP (1) JP3892792B2 (ko)
KR (1) KR100498626B1 (ko)
TW (1) TW583732B (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102013389A (zh) * 2009-09-03 2011-04-13 芝浦机械电子装置股份有限公司 基板处理设备和基板处理方法
TWI421927B (zh) * 2010-03-09 2014-01-01 Dainippon Screen Mfg 基板清洗方法及基板清洗裝置
CN105448662A (zh) * 2014-09-18 2016-03-30 株式会社思可林集团 基板处理装置以及基板处理方法
TWI581867B (zh) * 2011-08-30 2017-05-11 斯克林集團公司 基板處理裝置、基板處理方法、及噴嘴
TWI613703B (zh) * 2016-01-25 2018-02-01 Screen Holdings Co Ltd 基板處理裝置及基板處理方法

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060118132A1 (en) * 2004-12-06 2006-06-08 Bergman Eric J Cleaning with electrically charged aerosols
WO2004109779A1 (ja) * 2003-06-06 2004-12-16 Tokyo Electron Limited 基板の処理膜の表面荒れを改善する方法及び基板の処理装置
CN100423205C (zh) 2003-11-18 2008-10-01 东京毅力科创株式会社 基板清洗方法、基板清洗装置
US20050211267A1 (en) * 2004-03-26 2005-09-29 Yao-Hwan Kao Rinse nozzle and method
JP4488497B2 (ja) * 2004-05-24 2010-06-23 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US20050274393A1 (en) * 2004-06-09 2005-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer clean process
TW200703482A (en) * 2005-03-31 2007-01-16 Toshiba Kk Method and apparatus for cleaning electronic device
JP2006286665A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 電子デバイス洗浄方法及び電子デバイス洗浄装置
KR101255048B1 (ko) * 2005-04-01 2013-04-16 에프에스아이 인터내쇼날 인크. 하나 이상의 처리 유체를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는데 이용되는 장치용 배리어 구조 및 노즐 장치
JP2007220956A (ja) * 2006-02-17 2007-08-30 Toshiba Corp 基板処理方法及び基板処理装置
CN101389415A (zh) * 2006-02-22 2009-03-18 赛迈有限公司 单侧工件处理
CN101484974B (zh) 2006-07-07 2013-11-06 Fsi国际公司 用于处理微电子工件的设备和方法以及遮挡结构
WO2008090019A1 (en) * 2007-01-22 2008-07-31 Sez Ag Method for cleaning a surface
JP5063138B2 (ja) * 2007-02-23 2012-10-31 株式会社Ｓｏｋｕｄｏ 基板現像方法および現像装置
KR101060664B1 (ko) * 2007-08-07 2011-08-31 에프에스아이 인터내쇼날 인크. 하나 이상의 처리유체로 전자소자를 처리하는 장비의 배리어 판 및 벤튜리 시스템의 세정방법 및 관련 장치
KR100901459B1 (ko) * 2007-10-11 2009-06-08 세메스 주식회사 약액 공급 장치
JP5224876B2 (ja) * 2008-03-31 2013-07-03 芝浦メカトロニクス株式会社 基板の処理装置
JP5705723B2 (ja) 2008-05-09 2015-04-22 テル エフエスアイ インコーポレイテッド 操作において開モードと閉モードとの切り替えを簡単に行う加工チェンバ設計を用いてマイクロ電子加工品を加工するための道具および方法
JP5355951B2 (ja) * 2008-07-24 2013-11-27 東京エレクトロン株式会社 液処理装置
JP5420336B2 (ja) * 2009-07-23 2014-02-19 大日本スクリーン製造株式会社 基板洗浄装置および基板洗浄方法
KR101258002B1 (ko) 2010-03-31 2013-04-24 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치 및 기판처리방법
JP5528927B2 (ja) * 2010-07-09 2014-06-25 東京エレクトロン株式会社 基板洗浄装置および基板洗浄方法
JP5852898B2 (ja) 2011-03-28 2016-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US20130034966A1 (en) * 2011-08-04 2013-02-07 Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") Chemical dispersion method and device
JP5829082B2 (ja) * 2011-09-09 2015-12-09 オリンパス株式会社 洗浄装置
KR101344921B1 (ko) * 2012-03-28 2013-12-27 세메스 주식회사 기판처리장치 및 방법
US9005877B2 (en) 2012-05-15 2015-04-14 Tokyo Electron Limited Method of forming patterns using block copolymers and articles thereof
JP6250924B2 (ja) * 2012-10-02 2017-12-20 株式会社荏原製作所 基板洗浄装置および研磨装置
US9393579B2 (en) 2012-10-03 2016-07-19 The Boeing Company Cleaning apparatus and method of cleaning a contaminated surface
KR101536722B1 (ko) * 2012-11-06 2015-07-15 세메스 주식회사 기판처리방법
US8975009B2 (en) 2013-03-14 2015-03-10 Tokyo Electron Limited Track processing to remove organic films in directed self-assembly chemo-epitaxy applications
US9147574B2 (en) 2013-03-14 2015-09-29 Tokyo Electron Limited Topography minimization of neutral layer overcoats in directed self-assembly applications
US8980538B2 (en) 2013-03-14 2015-03-17 Tokyo Electron Limited Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents
US20140273534A1 (en) 2013-03-14 2014-09-18 Tokyo Electron Limited Integration of absorption based heating bake methods into a photolithography track system
JP6223839B2 (ja) * 2013-03-15 2017-11-01 東京エレクトロン株式会社 基板液処理方法、基板液処理装置および記憶媒体
US9209014B2 (en) 2013-03-15 2015-12-08 Tokyo Electron Limited Multi-step bake apparatus and method for directed self-assembly lithography control
KR102394994B1 (ko) 2013-09-04 2022-05-04 도쿄엘렉트론가부시키가이샤 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리
US9349604B2 (en) 2013-10-20 2016-05-24 Tokyo Electron Limited Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
US9793137B2 (en) 2013-10-20 2017-10-17 Tokyo Electron Limited Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
JP2015198217A (ja) * 2014-04-03 2015-11-09 株式会社ディスコ 洗浄装置及びワークの洗浄方法
JP6502050B2 (ja) * 2014-09-29 2019-04-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016192538A (ja) 2015-03-30 2016-11-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN105563348B (zh) * 2015-12-28 2017-10-31 北京科技大学 一种后混合磨料水射流除鳞喷嘴
KR20170110199A (ko) * 2016-03-22 2017-10-11 세메스 주식회사 기판 처리 장치 및 방법
US9947597B2 (en) 2016-03-31 2018-04-17 Tokyo Electron Limited Defectivity metrology during DSA patterning
US11355366B2 (en) * 2018-08-30 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for shuttered wafer cleaning
CN109878404A (zh) * 2019-02-28 2019-06-14 贵州黎阳天翔科技有限公司 一种燃气射流洗消车
CN111921395B (zh) * 2020-07-30 2022-01-07 武汉大学 一种溶气式水射流装置及溶气式水射流发生方法
JP2022189496A (ja) * 2021-06-11 2022-12-22 東京エレクトロン株式会社 基板処理方法および基板処理装置
US12019370B2 (en) * 2021-08-31 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for manufacturing a semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19522525A1 (de) * 1994-10-04 1996-04-11 Kunze Concewitz Horst Dipl Phy Verfahren und Vorrichtung zum Feinstreinigen von Oberflächen
US6247479B1 (en) * 1997-05-27 2001-06-19 Tokyo Electron Limited Washing/drying process apparatus and washing/drying process method
JP3626610B2 (ja) * 1998-11-02 2005-03-09 東京エレクトロン株式会社 処理装置及び処理方法
US6558478B1 (en) * 1999-10-06 2003-05-06 Ebara Corporation Method of and apparatus for cleaning substrate
US6387822B1 (en) * 1999-11-12 2002-05-14 Texas Instruments Incorporated Application of an ozonated DI water spray to resist residue removal processes
JP3939077B2 (ja) 2000-05-30 2007-06-27 大日本スクリーン製造株式会社 基板洗浄装置
US6951221B2 (en) * 2000-09-22 2005-10-04 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6858091B2 (en) * 2001-07-13 2005-02-22 Lam Research Corporation Method for controlling galvanic corrosion effects on a single-wafer cleaning system
TW561516B (en) * 2001-11-01 2003-11-11 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
JP3993048B2 (ja) * 2002-08-30 2007-10-17 大日本スクリーン製造株式会社 基板処理装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102013389A (zh) * 2009-09-03 2011-04-13 芝浦机械电子装置股份有限公司 基板处理设备和基板处理方法
TWI421927B (zh) * 2010-03-09 2014-01-01 Dainippon Screen Mfg 基板清洗方法及基板清洗裝置
TWI581867B (zh) * 2011-08-30 2017-05-11 斯克林集團公司 基板處理裝置、基板處理方法、及噴嘴
CN105448662A (zh) * 2014-09-18 2016-03-30 株式会社思可林集团 基板处理装置以及基板处理方法
CN105448662B (zh) * 2014-09-18 2018-10-02 株式会社思可林集团 基板处理装置以及基板处理方法
TWI613703B (zh) * 2016-01-25 2018-02-01 Screen Holdings Co Ltd 基板處理裝置及基板處理方法
US10665479B2 (en) 2016-01-25 2020-05-26 SCREEN Holdings Co., Ltd. Substrate treatment device and substrate treatment method

Also Published As

Publication number Publication date
JP2003209087A (ja) 2003-07-25
KR100498626B1 (ko) 2005-07-01
US20030084925A1 (en) 2003-05-08
JP3892792B2 (ja) 2007-03-14
US20050115596A1 (en) 2005-06-02
US7422641B2 (en) 2008-09-09
US7314529B2 (en) 2008-01-01
KR20030038377A (ko) 2003-05-16

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