TW546856B - III nitride compound semiconductor light-emitting device - Google Patents

III nitride compound semiconductor light-emitting device Download PDF

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Publication number
TW546856B
TW546856B TW091112090A TW91112090A TW546856B TW 546856 B TW546856 B TW 546856B TW 091112090 A TW091112090 A TW 091112090A TW 91112090 A TW91112090 A TW 91112090A TW 546856 B TW546856 B TW 546856B
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Taiwan
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terminal electrode
light
group
layer
electrode film
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TW091112090A
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English (en)
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Toshiya Uemura
Shigemi Horiuchi
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Toyoda Gosei Kk
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
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Description

546856 五、發明說明（1) 【發明詳細說明】 【技術領域】 本發明係關於第1Π族氮化物系化人胁企3 A 詳言之，係關於在同一面上形成有；端物電+極導= m族氮化物系化合物半導體發光元件 ’、^而電極的第 式miPChlp Type)發光裝置。件較適合使用於覆晶 【背景技術】 已知有一種將設有由第m族氮化物系化合物半導體椹 成發光層的元件，以形成p端電極與11端電極之面為安 面丄而安裂於支樓體上之構造（覆晶式）的發光裝置。^此 形怨的發光裝置中，從發光元件之發光層所發出的光，將 通過光穿透性基板並放射於外面。發光元件的各電極， 過導電性黏著構件電連接於支撐體的電極（n層、p層或配 線圖案）上。導電性黏著構件被要求較高的導電性，一般 採用由AU所構成的黏著構件（Au凸塊）。此外，發光元件% η端電極則採用A1、V等。另外51)端電極則採用接觸電阻 較低，且反射效率較高的Rh等。 當P端電極採用Rh的情況時，因為Au凸塊與Rh間的黏著 車乂低’因此預先在P端電極表面上形成由所構成的厚 膜，俾提高p端電極與Au凸塊的黏著性。藉此，便可提高 發光元件與支撐體間的接合強度。但是，若著眼於η端電 極的話’其表面係屬於電極材料的Α丨等，η端電極與Au凸 塊間的接合強度不可謂為足夠。因此，在保存性與耐久性 等方面仍有尚待改善的空間。此外，在η端電極與支撐體
C:\2D-C0DE\91-O8\91112090.ptd
第4頁 546856 五、發明說明（2) 之間產生接 慮。另外， 就從而于|虫性 況時，在其 產生問題。 本發明乃 氮化物系化 與耐久性， 【發明揭示 本發明為 發明的話， 元件，其係 ，其具備有 極膜，及包 膜。 合不佳，而有可的&、+ + \心 在η端電極表面上匕fJV7發揮元件機能的虞 觀點而言並非適卷’裸//電極材料的A1等’ 中一者福與另；：者^外，即便焊接電極的情 为者的Au之間，將在焊接性上 其目的在於提供-種“族 件，乃具有優越的保存特性 ^ 一有女疋的兀件機能之發光元件。 達上述目的遂由下述構造而達成。即，依照本 乃提供一種第m族氮化物系化合物半導體發光 具有在同一面上所形成的p端電極與11端電^者 ••包含有形成於該p端電極表面上<Au的？端電 含有形成於該η端電極表面上之Au的^端電極
在上述構造中，使供將發光元件安裝於支撐體上用之含 有黏著材（Αιι凸塊）材料（Au)的膜，係形成於p端電極表面3 與η 電極表面上’可提咼一電極表面與該黏著材間的黏 著性。結果，當將發光元件安裝於支撐體上的情況時，便 提昇發光元件與支撐體間的接合強度。藉此便可達元件機 能安定化’且提昇保存特性與耐久性的功效。 再者’因為在二電極表面上形成含Au之膜，因此提昇二 電極表面的耐姓性。就此點而言，亦可謂提供一種保存安 定性與耐姓性較高的第族氮化物系化合物半導體發光元
546856 五、發明說明（3) 件。 安定性 相同構 ’具有 昇當以 裝步驟 ’係覆 。所謂 的發光 ’而安 的光係 係指具 件。其 般式為 四元 。亦可 如上述，依照本發明之構造的話， 與耐蝕性優越，且具安定之—从η &捉仏種保存 i 4 六μ4疋之7°件機忐的發光元件。 =為在一電極表面上形成 便—電極表面的色調相合致。所以 提昇Ϊ光：件形成二電極之面的外觀辨識性，且提 該面為安1面而安裝支撐體時的安農 效率化等功效。 【發明之較佳實施形態】 本發明之第m族氮化物系化合物半導體發光元件 晶式發光元件二在同一面上形成p端電極與n端電極 覆曰曰式發光7X>件」係指覆晶式發光裝置中所採用 元件。即，以形成p端電極與n端電極之面為安裝面 裝於基板等支樓體上並供使用的發光元件。所發光 從基板端（即電極形成面的背面）放射出。 所謂「第m族氮化物系化合物半導體發光元件」 有由第m族氮化物系化合物半導體所構成的發光元 中，所謂的「第πι族氮化物系化合物半導體」係一 AlxGaY In卜X_YN(0 、〇-Υ-1、〇$χ + γ$；[)所示 系，包括有AIN 、GaN及InN之所謂二元系，AlxGapxN Alx In卜XN及Gax IrvxN(以上，0 < X < 1)之所謂三元系 將第ΠΙ族元素的至少其中一部份，以硼（B)、鉈（τ 1)等取 代。it匕外，氮（N)之至少其中一部份亦可被磷（P )、砷 (As)、銻（Sb)、鉍（Bi)等取代。第皿族氮化物系化合物半
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五、發明說明（5) 形成的話便可。最好覆蓋整體？端雷托主 ^ 此，整體P端電桎表面便 極表面而形成。藉 提昇P端電極表面的耐蝕性7 = 3 Au的膜所覆蓋著，而 塊間的黏著性。 亦可期待提昇與Au凸 最好形成層積複數芦 用由選擇自Ti 、Cr、^膜的構造。譬如，最好採 金屬或該金屬的合金所構 a Zr、及ν所構成組群中 由Au或Au合金所構成上山"'底層，以及在其上所形i 此處的基底層係供提古之^雙層所形成的P端電極膜。 所構成的層）間之黏極表面與上層（由AU或AUW 設定為與Au凸塊的材料、此外，最好將上層的材料 性。在基底層與上二ί冋:此乃為提高二者間的黏著 層。 9 或在上層之上面再形成其他白《 基底層的膜厚，最枓1从| Ρ 妒雷朽矣品U 敢好小於上層的膜厚。換言之，最好名 p立而電極表面上形成較镇 取灯$ 的上層。藉由將基底^再Μ上面形成厚膜 層所產生電阻上升:=成=的方式，便可抑制因基為 便可使ρ端電極膜由將上層形成較厚的方式， 厚譬如性變佳。基底層的膜 上層的膜料士口在0 最好在5⑽〜5—範圍内。 〜3口範圍内。·㈣〜5〇㈣範圍内，最好在0.3心 (η端電極） η端電極材料可梭闲|
Mo、W、Hf 等金屬咬今 ^· 、 、Sn、Ti、Cr、Nb、Ta、 屬或忒專的合金。其中，亦可將n端電極f
546856
成層積不同組成之層的雙層或多層構造 A1的雙層構造。 iiU4_SJlS) 譬如可'形成V與 如同P端電極表面，在n端電極表面上亦形成含 Ph電極膜。藉由形成電極膜，便可 =J塊黏著方令支撐體上時，n端電極與A U凸塊\广二黏件利 度。在接性），、结果將提南發光元件與支撐體間白勺接合強 η端電極膜係僅要覆蓋n端電極表面 形成的話便可。最好形成覆蓋著整 ：、中-部份而 極膜。藉此，整體η端電極表面便H表面的η端電 蓋著，而提昇η端電極表面的耐CAU的膜所覆 昇與Au凸塊間的黏著性。才钱〖生。此外，亦可期待提 最好形成層積複數層n端電極膜 用由選擇自Ti、cr、w、Mo、Ta^7的構造。譬如，最好採 金屬或該金屬的合金所構成的基底：及二斤二且3組群中的 由Au或Au合金所構成上層之由雙屏二 1在/、上所形成 此處的基底層係、供提高,端電極表面心成的η:電極膜。 所構成的層）間之黏著性用的。 ^上層（由Au 4Au合金 成，基底層的材料，最好採用T丨、 用瘵鍍等輕易的形 上層的材料設定為與AU凸塊的材料，V。此外、，最好將 間的黏著性。在基底層與上層之 B 。此乃為提高二者 成其他的層。 或在上層之上面再形 基底層的膜厚，最好小於上層 朕厗。換言之，最好在
546856 五、發明說明⑺ η端電極表面上形成較薄的基底層，再於其上面形成厚膜 的上層。猎由將基底層形成較薄的方式，便可抑制因基底 層所產生電阻上升。此外，藉由將上層形成較厚的方式， 便可使η端電極膜與Au凸塊間的黏著性變佳。基底層的膜 厚譬如在1⑽〜10〇nm範圍内，最好在5旧〜5〇_範圍内。、 上層的Ϊ厚譬如在0.1"〜⑽範圍内，最好在〇·3㈣ 〜3//πι範圍内。 最好將n端電極膜構造設定為如同p端電極膜的構造。 乃在此類態樣巾，可同時形成n端電極膜與？端冑極 簡化製造步驟的緣故所致。譬如，將η端電極膜與P端電極
膜’分別形成在由Ti所構成基底層上，層積著由 的上層的構造。 X 本發明之第m族氮化物系化合物半導體發光元嬖 可依照下述方式進行製造。 ° 首=準備可成長第皿族氮化物系化合物半導體層的基 ϊί其上依至少依序層積n型第1Π族氮化物系化合物 ”：層、由第瓜族氮化物系化合物半導體所構成的發光 :數；I 物系化合物半導體層的方式，層積 基板可採用如：藍寶石、尖晶石、石夕、碳 族气化：t:二磷化鎵、砷化鎵、氧化鎂、氧化錳、第皿 = 導體單結"。當採用藍寶石基板的 f月况時，取好利用其a面。 ^其=施行蝕刻處理而裸露出n型半導體層的其中一部 刀 者將P端電極與11端電極，分別形成於p型第皿族
C:\2D-CODE\91-08\9lll2090.ptd 第10頁 546856 五、發明說明⑻ 1 〜 物系化合物半導體上、與n型第瓜族氮化物系化人 =體上。ρ端電極與η端電極的形成，可利用蒸鍍、° 週知的方法遠行。其次，將試料表面施行潔淨化。，= 的方法可列舉加熱、紫外線照射等。藉由將試料表’面 特別係η電極表面）予以潔淨化，便可確保η端電極與η 電極膜間的足夠接合力。接著，在ρ端電極表面上形成# 電極膜。同樣的，在η端電極表面上形成^端電極膜。i而 電極膜與η端電極膜的形成，分別可利用蒸鍍、減錢等週 知的方法進行。當將ρ端電極膜與η端電極膜設定為相同構 造的情況時，便可同時形成ρ端電極膜與η端電極膜。 施例〉 以下，採用本發明實施例，就本發明構造進行更詳細 說明。 ν 、、、的 圖1所示係一貫施例的發光元件1構造示意圖。發光元件 1的各層規格如下所示。 •組成 :Ρ - 6旦 N : M g、 :含InGaN層 :nU : Si〆 ：A 1N :藍...寶石
Ρ型層15 含發光之層的層1 4 η型層1 3 緩衝層1 2 基板1 1 在基板11上介以緩衝層1 2形成由經摻雜過η型雜質s i的 GaN所構成之η型層13。其中，基板11雖採用藍寶石'，但'曰 並不僅限於此，尚可採用藍寶石、尖晶石、;、碳化^是
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氧化辞、鱗化錄、坤化鎵.、氧化鎂、氧化錳、 物系化合物半導體單結晶等。此外，綫椒思a弟·^ ^孔化
依MOCVD法形成，但是並不僅限於此。材/虽採用A1N並 τ Μ Λ1Γ Μ τ疋亚不偟I艮於此材枓可採用如：GaN 、InN 、AlGaN 、InGaN、及A1InGaN 等。製法 分子束結晶成長法（MBE法）、鹵化物氣相成長法=pE · 法）、濺鍍法、離子鍍法、電子簇射法等方法。者將 族氮化物系化合物半導體採用為基板的情田可 該緩衝層。 了 1史』洎唂 再者，基板與緩衝層係在半導體元件形 要可予以去除。 乂 <俊配。而 此處，η型㉟雖採用GaN形《，但是亦 InGaN或AlInGaN。 不卬八丄㈣ 尚ΐί用L型層S雖1雜η型雜質的“ ’除此之夕卜，n型雜質 尚可才术用be、Se、丁e、c等。 其中，η型層雖摻雜n刑左金暂 尚可採用Ge、Se、Te cV^Sl ’除此之夕h型雜質 η型層㈣可由含發光之層的層“端之低電子漢度n_ 層丄=2 2端之高電子濃度Μ層所構成的雙層構造。 外：層14亦可含有量子井構造的發光層。此 接面型等。 休用早異負型、雙異質型及同質 為i ^ ί ^=f14 #可含有在p型層15端’經摻雜鎮等 = I的第m族氮化物系化合物半導體声。此 乃可有效的防止經植入於含發光之層的層“中的
546856 五、發明說明（ίο) 散於P型層1 5中的緣故所致。 在含發光之層的層1 4上來占士 4A GaN所構成的p型層15。J型成雜過P型雜質之以的 T Μ t , 此13型層可為AlGaN、InGaN、或
InAlGaN。此外，p型雜質可採用&、Be、ca、& 再：：型層15可為含發光之層的層"端之低電洞濃产 之高，電洞濃度P+層所構成的雙層構造。又 半導〜^ t t光；極體中，各第冚族氮化物系化合物 此之外，尚可刪子而形成的，但是除 ΐίϊ 賤鑛法、離子鑛法、電子㈣法等方 在形成ρ型層1 5之後，利用巍岁丨丨_ 發光之層的層14 rnm 型層15、含 的其中1份。層中的—部份，俾裸露-型層13 接著，在P型層15上利用蒸鍍形成由扑所構成的p電極 1 8。η電極1 9係由A1盘V螫居所Μ 4、 ^ n刑Μ 1 q卜# V又層所構成，並利用蒸鍍而形成於 ^曰3上。；、，、、後，利用週知的手段進行合金化。 P?電極膜⑼與⑽電極膜21均為在由71所構成的基底層 〇a’ 21a上，層積由Au所形成之上層2〇b，而構成。 實施例中，將基底層20a，21a膜厚設定為1〇，將上 2、0b，21b膜厚設定為1//m。 曰 在上述步驟之後，採用晶割機等進行晶月分離步驟。 其次:說明採用發光元件1所構成發光裝置的例子。圖2 所示係採用發光元件i之覆晶式LED2。LED2係由發光元件 546856 五、發明說明⑴） 1、引線=0與31、作為支撐體用的辅助安裝用基板5〇、 及封政树脂35所概略構成。以下，參照引線架3〇之杯狀部 33附近的放大圖（圖3)，說明發光元件〗的載置態樣。 發光π件1係利用輔助安裝用基板5〇而安裝於引線架3〇 與31的杯狀部33上。基板5〇係具有p型區域51及〇型區域 52，且在其表面上除形成Au凸塊4〇部分之外，其餘均形成 由Si 〇2所構成的絕緣膜6〇。如圖所示，藉由將電極端朝向 下方並將發光元件1辅助安裝於基板5 〇上，p端電極膜2·〇 便介以Au凸塊而連接於基板5〇的0型區域51上，同樣的，η ，電極膜21介以Au凸塊而連接於基板5〇 wn型區域52上。 藉此’發光元件1的p電極1 8與η電極丨9，便將分別電連接 於f板50的ρ型區域51與11型區域52上，而且發光元件1將 固=於基板50上。基板5〇係將安裝有發光元件1之面的背 面當作安裝面’並利用銀糊劑6丨黏著固定於引線架3 〇的杯 狀部3 3上。 圖4所不係採用發光元件1所構成另一形態的發光裝置 (LED3) LED3 係屬於SMD(Surface Mount device)式LED。 此外’如同上述LED2的構件，便賦予相同元件編號。 LED3係具備有：發光元件1、當作支撐體用的基板7〇、及 反射構件80。發光元件！係如同上述LED2的情況，將電極 端當作安裝面，並安裝於基板7〇上。在基板7〇表面上形成 配線圖案71。藉由相關配線圖案、及發光元件1的p端電極 膜2 0與η端電極膜21，介以Au凸塊4〇而安裝，俾使發光元 件1的二電極電性連接於配線圖案。在基板7 0上，依包圍
第14頁 C:\2D-OODE\9l-08\91H2090.ptd M6856 五、發明說明（12) 發光元件1之方式，耐¥ #广 白色系樹脂所構成，且在^射構/牛80 °反射構件8〇係由 射出的光，依高i率將從發μ件1所放 不ΐϊ:::參照詳細說明或特定實施形態進行說明，惟在 精：與申::專利範圍的前提下，均可= ’、一 &乃熟驾5亥項技術者均知悉者。 ”糸根據2 0 01年6月6曰所申請的日本專利申 原=，。8號)者’其内容在參照上亦=:=(。特 L產業上可利用性】 τ 本：明並未僅限定於上述發明實施形態及實施例的記 不脫離申請專利範圍的前提下，亦涵蓋熟習 街者所輕易思及範疇的各種變化。 以下，揭示下述事項。 11· 一種發光元件，其係具有在同一面上所形成的ρ端電 極與η端電極的第ΠΙ族氮化物系化合物半導體發光元件； 其具備有：包含有形成於該ρ端電極表面上之^的13端電極 膜及包含有形成於该11端電極表面上之八11的11端電極膜； 其中，上述ρ端電極係選自Rh、Au、pt、Ag、Cu、Α1、
Ni、Co、Mg、Pd、V、Μη、Bi、Sn、及Re 等所組成之組群 中之一種或二種以上的金屬或該金屬的合金所成。 1 2 · —種發光元件’其係具有在同一面上所形成的ρ端電 極與η端電極的第ΙΠ族氮化物系化合物半導體發光元件； 其具備有：包含有形成於δ亥Ρ &電極表面上之Au的ρ端電極 膜，及包含有形成於該η端電極表面上之Au的η端電極膜；
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546856 五、發明說明（13)
其 Mo 或 中，上述η端電極係選自a 1、V、S η、 、W、及H f等所組成之組群中之一種 该金屬的合金所成。
Ti、Cr、Nb、Ta、 或一種以上的金屬 21 種製造万 雷極的舜曰%黛/ 两上形成P端電極與η端 ΐ;後：ΐ ί! 化物系化合物半導體發光元件之!仏万法，具包含有： 在上述P端電極上形成含^之？端電極膜的步及 在上述η端電極上形成含^ in端電 22·如21所述之製造方法，其中 膜的步驟： 之前，包含有將上述!！端電極> + : 述η鈿電極膜 23·如21或22所述之；；=面：：潔淨化的步驟。 膜的步驟係包含有： 彳，上述形成Ρ端電極 所端電極上，形成選自Tl、Cm、Ta、Zr、及V所組成之組群中之金屬哎哕.凰步驟；以及 自次°玄至屬的合金所構成之基底層的 形成由Au或Au合金所構成之上層的步驟。 24如21〜23中任—項所述之製造方法 上述形成η端電極膜的步驟係包含有· τ 在η端電極上，形成撰白τ · 丄、 、 y 风、自 Τ1、Cr、W、Mo、Ta、Zr、及V=、之組群护之金屬或該金屬的合金所之基底層的 步驟；以及 形成由Au或Au合金所構成上層的步驟。2 5 .如21〜2 4中任一項所述之製造方法，宜中，上述形 成P端電極膜之步驟中的形成上層之步驟，與上述形成n端
546856 五、發明說明（14) 電極膜之步驟中的形成上層之步驟，係同時執行者。 2 6 .如21〜2 5中任一項所述之製造方法，其中，上述p端 電極膜係覆蓋著上述P端電極的表面整體所形成。 2 7 .如21〜2 6中任一項所述之製造方法，其中，上述η端 電極膜係覆蓋著上述η端電極的表面整體所形成。 【元件編號說明】 1 發光元件 2, 3 LED 11 基板 12 缓衝層 13 n型層 14 含發光之層 15 Ρ型層 18 p電極 19 η電極 20 ρ端電極膜 20a， 21a 基底層 20b, 2 1b 上層 21 η端電極膜 30, 31 引線架 33 杯狀部 40 Au凸塊 50 基板 51 ρ型區域
C:\2D-CODE\91-08\91112090.ptd 第17頁 546856 五、發明說明（15) 52 η型區域 60 絕緣膜 70 基板 71 配線圖案 80 反射構件
C:\2D-C0DE\9 卜 08\91112090.ptd 第18頁 546856 圖式簡單說明 圖1為本發明一實施例的發光元件示意圖。 圖2為採用發光元件所構成的LED示意圖。 圖3為LED中林狀部附近的放大圖。 圖4為採用發光元件所構成之SMD式LED示意圖。
C:\2D-CODE\91-08\91112090.ptd 第19頁

Claims (1)

  1. 546856 六、申請專利範圍 1 ·—種第m 有在同一面上 包含有形成 包含有形成 2·如申請專 體發光元件， 者，而該複數 選自Ti、Cr 屬或該等金屬 由在該基底 3 ·如申請專 體發光元件， 4 ·如申請專 體發光元件， 者，而該複數 選自ΊΊ、Cr 屬或該金屬的 由在該基底 5 ·如申請專 體發光元件， 6 ·如申請專 體發光元件， 同的層構造。 7 ·如申請專
    C:\2D-roDE\91-08\91112090.ptd 族乳化物糸化合物半導體發光元件，其係具 所形成的P端電極與η端電極者，其具備有· 於該Ρ端電極表面上之A u的ρ端電極膜；以及 於該η端電極表面上之Au的η端電極膜。 利範圍弟1項之第UI族氮化物系化合物半導 其中’上述ρ端電極膜係由複數層所構成 層包含有： 、W、Mo、Ta、Zr、及V所組成之組群中之金 的合金所構成之基底層；及 層上所形成之Au或Au合金所構成之上層。 利範圍第2項之第ΠΙ族氮化物系化合物半導 其中’上述基底層係由Ti或Ti合金所構成。 利範圍第1項之第m族氮化物系化合物半導 其中，上述η端電極膜係由複數層所構成 層包含有： 、你、Μ 〇、T a、Z r、及V所組成之組群中之金 合金所構成之基底層；及 層上所形成之Au或Au合金所構成之上層。 利範圍第4項之第ΠΙ族氮化物系化合物半導 其中，上述基底層係由T i或T i合金所構成。 利範圍第1項之第m族氮化物系化合物半導 其中，上述ρ端電極膜與上述η端電極膜係相 ^範圍第1項之第Ε族氮化物系化合物半導 第20頁 546856 六、申請專利範圍 月豆杂光元件’其中’上述p立而電極膜係覆箋# 的表面整體所形成。 者上述P端電極 8 ·如申請專利範園第1項之第族氮化 體發光元件，其中，上述"電極臈係覆=化合物半導 的表面整體所形成。 盖者上述：！端電極 9 · 一種發光裝置，係包含有： 第ΠΙ族氮化物系化合物半導體發光元件，具 $ 一 上形成的p端電極與η彡而電極，並具有··包含有有在门面 電極表面上之Aii的Ρ端電極膜；及包含有彤& %成於該Ρ端 表面上之電極膜；以及 有也成於該n端電極 安裝上述發光元件的支撐體。 1 0 .如申請專利範圍第9項之發光裝置，其 ^ 元件係介以Au凸塊而安裝於支樓體上。 ’迷么光 1 1 ·如申請專利範圍第9項之發光裝置，其 體係具有連接於上述P端電極上之P端區域’ ☆二f = η端電極上之η端區域的基板。 及連接於上述 1 2.如申請專利範圍第9項之發光裝置，其 Γϋ有連接於上述ρ端電極與上述η端電極上之配 ^ ^ t ϊ ^ t ^ itp ^ 增所構成者，而該複數層包含有： 屬Ϊ該二合構、Zr、及v所組成之組群中之金 由在該基底層上=成之基底層；及 所形成之Au或Au合金所構成之上層。
    C: \2D-C0DE\91 -08\91112090.ptd 第21頁 546856 申請專利範圍 广1協4.如申請專利範圍第13項之發光裝置，其中，上述基 底層係由Ti或以合金所構成。 4 土 15./'申請專利範圍第9項之發光裝置，其中，上述n端 電極膜係由包含有： 選自丁1、Cr、W、Mo、Ta、Zr、及V所組成之組群中之金 屬或該金屬的合金所構成之基底層；及 由在该基底層上所形成之Au或^合金所構成之上層。 1 6 ·如申請專利範圍第i 5項之發光裝置，其中，上述基 底層係由Ti或Ti合金所構成。
    1 7 ·如申請專利範圍第9項之發光裝置，其中，上述p端 電極膜與上述η端電極膜係相同的層構造。 1 8 ·如申請專利範圍第9項之發光裝置，其中，上述ρ端 電極膜係覆蓋著上述Ρ端電極的表面整體所形成。 1 9 ·如申請專利範圍第9項之發光裝置，其中，上述η端 電極膜係覆蓋著上述η端電極的表面整體所形成。
    C:\2D-CODE\91-08\91112090.ptd 第22頁
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