CN1513212A - 第ⅲ族氮化物化合物半导体发光元件 - Google Patents

第ⅲ族氮化物化合物半导体发光元件 Download PDF

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CN1513212A
CN1513212A CNA028111990A CN02811199A CN1513212A CN 1513212 A CN1513212 A CN 1513212A CN A028111990 A CNA028111990 A CN A028111990A CN 02811199 A CN02811199 A CN 02811199A CN 1513212 A CN1513212 A CN 1513212A
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lateral electrode
electrode film
compound semiconductor
nitride compound
iii
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CN1309099C (zh
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�ϴ忡Ҳ
上村俊也
堀内茂美
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Toyoda Gosei Co Ltd
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Abstract

在倒装晶片型第III族氮化物化合物半导体发光元件中，在p侧电极表面和n侧电极表面的每一个上配置一个Au层，并插入有Ti层。

Description

第III族氮化物化合物半导体发光元件
技术领域
本发明涉及一种第III族氮化物化合物半导体发光元件。特别地，它涉及一种具有在一个表面侧形成的p侧电极和n侧电极并优选用在倒装晶片型发光器件中的第III族氮化物化合物半导体发光元件。
背景技术
已经知道(倒装晶片型)发光器件的配置，具有第III族氮化物化合物半导体发光层的元件安装在支架上，在其上形成p侧电极和n侧电极的元件表面被用作安装表面。在这种类型的发光器件中，从发光元件的发光层发出的光经过透光基底照射到外面。发光元件的电极经导电性粘接构件分别电连接到支架的电极(n层和p层或布线图)。要求导电性粘接构件具有高导电性。一般地，Au粘接构件(Au块(bump))用作导电性粘接构件。Al、V等可以用作发光元件的n侧电极。另一方面，低接触电阻和高反射效率的Rh等可以用作p侧电极。
当Rh用作p侧电极时，Rh对Au块的粘接是低的。因此，可以事先在p侧电极的表面形成Au的厚膜以增强p侧电极对Au块的粘接。结果，发光元件和支架之间的粘结强度被增强。当注意n侧电极时，n侧电极表面由电极材料Al等制成。不能说n侧电极和Au块之间的粘结强度是足够的。因为这个原因，仍有改进防腐特性或耐用的空间。也害怕因为n侧电极和支架之间的粘结发生失败使得元件功能不能充分展现出来。而且从耐腐蚀性的角度看不希望电极材料Al等暴露在n侧电极表面。当一个由Al制成和另一个由Au制成的两个电极必须焊接时还有一个电极可焊性的问题。
考虑到上述问题，开发了本发明，本发明的目的是提供一种防腐特性或耐用性优异并具有更稳定的元件功能的第III族氮化物化合物半导体发光元件。
发明内容
为了达到上述目的，本发明构造如下。即，根据本发明，提供一种具有在一个表面侧形成的p侧电极和n侧电极的第III族氮化物化合物半导体发光元件，第III族氮化物化合物半导体发光元件进一步具有：在p侧电极表面形成的包含Au的p侧电极膜；和在n侧电极表面形成的包含Au的n侧电极膜。
在上述的构造中，在p侧电极表面和n侧电极表面的每个表面形成膜以改进两个电极表面中的每个电极表面和粘接构件之间的粘接，该膜包含在支架上安装发光元件用的粘接构件(Au块)的材料(Au)。结果，当发光元件安装在支架上时，改进了发光元件和支架之间的粘结强度。相应地，得到元件功能的稳定性，改进防腐特性或耐用性。
而且，因为在两个电极表面的每一个上都形成含Au的膜，两个电极表面的每个的耐腐蚀性都得以改进。从这个角度可以说，提供了一种高防腐稳定性或耐用性的第III族氮化物化合物半导体发光元件。
如上述，根据本发明的构造，提供一种防腐特性或耐用性优异、元件功能更稳定的发光元件。
随便提及，在上述的构造中，因为在两个电极表面形成结构相同的膜，两个电极表面的色调能相互匹配。因此，也达到了改进其上形成有两个电极的发光元件表面的外观认知性(appearance recognition)、改进在具有用作安装表面的表面的发光元件上安装支架时的安装精确性、改进安装过程的效率的效果。
附图简要说明
图1是表示作为本发明一个方案的发光元件的图；
图2是表示用发光元件形成的发光二极管(LED)的图；
图3是发光二极管中杯状部分周围的放大图；
图4是表示用发光元件形成的SMD型LED的图。
具体实施方式
本发明的第III族氮化物化合物半导体发光元件是具有在一个表面侧形成的p侧电极和n侧电极的倒装晶片型发光元件。倒装晶片型发光元件意味着用在倒装晶片型发光器件中的发光元件，即用来安装在支架例如板上的发光元件，这时其上形成有p侧电极和n侧电极的发光元件表面被用作安装表面。发射的光从板侧辐射出，即从其上形成有电极的表面侧的相反侧射出。
第III族氮化物化合物半导体发光元件意味着具有第III族氮化物化合物半导体制成的发光层的发光元件。这儿，第III族氮化物化合物半导体用通式表示：AlXGaYIn1-X-YN(0≤X≤1，0≤Y≤1，0≤X+Y≤1)，其表示四元化合物，但是包括所谓二元化合物例如AlN、GaN和InN，和所谓的三元化合物例如AlXGa1-XN、AlXIn1-XN和GaXIn1-XN(上述式中，0＜X＜1)。第III族元素可以部分地被硼(B)、铊(Tl)等代替。氮(N)可以部分地被磷(P)、砷(As)、锑(Sb)、铋(Bi)等代替。第III族氮化物化合物半导体层可以包含任何可有可无的掺杂剂。Si、Ge、Se、Te、C等可以用作n型杂质。Mg、Zn、Be、Ca、Sr、Ba等可以用作p型杂质。
第III族氮化物化合物半导体层可以用已知方法形成，例如金属有机化学气相沉积法(MOCVD法)、分子束取向附生法(MBE法)、卤化物气相取向附生法(HVPE法)、溅射法、离子镀法、电子簇射法等。
顺便提及，掺杂p型杂质后，第III族氮化物化合物半导体可以进行电子束照射、等离子体照射或炉子的加热。但是这不是必需的。
下面将更详细地描述本发明的各个构件。
(p侧电极)
一种金属例如Rh、Au、Pt、Ag、Cu、Al、Ni、Co、Mg、Pd、V、Mn、Bi、Sn、Re等或其合金能用作p侧电极的材料。特别地，Rh或Pt能用作p侧电极的优选材料，因为它对第III族氮化物化合物半导体发光元件发射的光的波长有高的反射效率。p侧电极可以形成为其中各层的组分不同的两层或多层结构。
(p侧电极膜)
在p侧电极表面形成含Au(金)的p侧电极膜。p侧电极膜增强p侧电极对在支架上安装发光元件时使用的Au粘接构件(下面称为“Au块”)的粘接，进而增强发光元件和支架之间的粘结强度。
如果p侧电极膜可以覆盖p侧电极表面的至少一部分，可以以任何方式形成p侧电极膜。优选形成p侧电极膜，从而p侧电极表面完全被p侧电极膜覆盖。结果，p侧电极表面完全被含Au的膜覆盖，从而改进p侧电极表面的耐腐蚀性。另外能预期改进对Au块的粘接。
p侧电极膜优选形成为多层的层压物。例如，p侧电极膜优选使用两层结构，两层结构的起始层由选自Ti、Cr、W、Mo、Ta、Zr和V组成的组中的一种金属或其合金制成，上层由Au或Au的合金制成并在起始层上形成。这儿提及的起始层被用来增强p侧电极表面和上层(由Au或Au的合金制成的层)之间的粘接。特别优选，Ti、Cr、或V用作起始层的材料，因为用气相沉积等能容易地形成起始层。上层材料优选选择和Au块的材料相同。这是为了增强两者的粘接。在起始层和上层之间或上层上可以形成另一层。
起始层的膜厚优选选择小于上层膜厚。换句话说，优选在p侧电极表面形成薄的起始层，在薄起始层上形成厚膜上层。薄起始层的形成抑制起始层的电阻增加。厚上层的形成改进p侧电极膜和Au块之间的粘接。起始层的膜厚例如在1-100nm范围内，优选在5-50nm范围内。上层的膜厚例如在0.1-50μm范围内，优选在0.3-3μm范围内。
(n侧电极)
一种金属例如Al、V、Sn、Ti、Cr、Nb、Ta、Mo、W、Hf等或其合金能用作n侧电极的材料。n侧电极可以形成为其中组分不同的各层被层压的两层或多层结构。例如n侧电极可以以V和Al两层结构形成。
(n侧电极膜)
含Au(金)的n侧电极膜在n侧电极表面形成，象p侧电极表面。n侧电极膜的形成在用Au块在支架上安装发光元件时增强n侧电极和Au块之间的粘接(紧密接触)，进而改进发光元件和支架之间的粘结强度。
如果n侧电极表面的至少一部分用n侧电极膜覆盖，可以以任何方式形成n侧电极膜。优选形成n侧电极膜，从而n侧电极表面完全被n侧电极膜覆盖。结果，n侧电极表面完全被含Au的膜覆盖，从而改进n侧电极的耐腐蚀性。另外可以预期对Au块粘接的改进。
n侧电极膜优选形成为多层的层压物。例如优选使用具有起始层和上层的两层结构为n侧电极膜，所述起始层由选自Ti、Cr、W、Mo、Ta、Zr和V组成的组中的金属或其合金制成，所述上层由Au或Au的合金制成并在起始层上形成。这儿提及的起始层被用来增强n侧电极表面和上层(由Au或Au的合金制成的层)之间的粘接。特别优选地，Ti、Cr或V用作起始层的材料，因为能用气相沉积等能容易地形成起始层。上层的材料优选选择为和Au块的材料相同。这是为了增强两者的粘接。可以在起始层和上层之间或在上层上形成另一层。
起始层膜厚优选选择为小于上层的膜厚。换句话说，优选在n侧电极表面形成薄的起始层，在薄起始层上形成厚膜上层。薄起始层的形成抑制起始层电阻的增加。厚上层的形成改进n侧电极膜和Au块之间的粘接。起始层的膜厚例如在1-100nm范围内，优选在5-50nm范围内。上层的膜厚例如在0.1-50μm范围内，优选在0.3-3μm范围内。
n侧电极膜的结构优选选择为和p侧电极膜的结构相同。在这样的模式中，n侧电极膜和p侧电极膜能同时形成，从而简化生产过程。例如按照起始层为Ti和起始层上层压Au上层的结构形成n侧电极膜和p侧电极膜中的每一个。
例如，本发明的第III族氮化物化合物半导体发光元件可以生产如下。
首先，制备能生长第III族氮化物化合物半导体层的基底。在基底上层压多层半导体层，至少顺序地排放n型第III族氮化物化合物半导体层、第III族氮化物化合物半导体的发光层和p型第III族氮化物化合物半导体层。蓝宝石、尖晶石、硅、碳化硅、氧化锌、磷化镓、砷化镓、氧化镁、氧化锰、第III族氮化物化合物半导体单晶等能用作基底。当使用蓝宝石基底时，优选使用基底的a面。
然后，使用蚀刻法显露出n型半导体层的一部分。然后分别在p型第III族氮化物化合物半导体层和n型第III族氮化物化合物半导体层上形成p侧电极和n侧电极。p侧电极和n侧电极能以已知方法例如气相沉积、溅射等形成。然后清洁样品表面。清洁方法的例子包括加热、紫外线照射等。当清洁样品表面、特别是n电极的表面时，在n侧电极和n侧电极膜之间能保持足够的粘结强度。然后，在p侧电极表面形成p侧电极膜。类似地，在n侧电极表面形成n侧电极膜。n侧电极膜和p侧电极膜中的每一个都能以已知方法例如气相沉积、溅射等形成。当p侧电极膜和n侧电极被选定为在结构上相互相等时，能同时形成p侧电极膜和n侧电极膜。
(方案)
联系本发明的方案下面更加详细地描述本发明的结构。
图1是典型地表示作为一个方案的发光元件1的结构的图。发光元件1的各层的说明如下。
        层                     ：组分
        p型层15                ：p-GaN:Mg
        含有发光层的层14       ：包括InGaN层
        n型层13                ：n-GaN:Si
        缓冲层12               ：AlN
        基底11                 ：蓝宝石
掺杂n型杂质Si的GaN的n型层13在基底11上形成，并插入缓冲层12。尽管这里蓝宝石用作基底11，但是基底11不局限于它。可以使用蓝宝石、尖晶石、硅、碳化硅、氧化锌、磷化镓、砷化镓、氧化镁、氧化锰、第III族氮化物化合物半导体单晶等。尽管用MOCVD法由AlN制成缓冲层，但是缓冲层并不局限于此。可以使用GaN、InN、AlGaN、InGaN、AlInGaN等作为缓冲层的材料。可以使用分子束取向附生法(MBE法)、卤化物气相取向附生法(HVPE法)、溅射法、离子镀法、电子簇射法等作为生产缓冲层的方法。当第III族氮化物化合物半导体用作基底时，可以省略缓冲层。
而且，形成半导体元件后，按照偶尔需要可以除去基底和缓冲层。
尽管这里n型层由GaN制成，但是可以使用AlGaN、InGaN或AlInGaN。
尽管n型层用n型杂质Si掺杂，但是可以使用其它的n型杂质例如Ge、Se、Te、C等。
n型层13可以是具有n-层和n+层的两层结构，其中低电子密度的n-层在含发光层的层14侧，高电子密度的n+层在缓冲层12侧。
含发光层的层14可以含有量子阱结构的发光层。单异质型(singlehetero type)结构、双异质型(double hetero type)结构、同质结型(homo-iunction type)结构等可以用作发光元件的结构。
含发光层的层14可以包含第III族氮化物化合物半导体层，该半导体层掺杂了受体例如镁等，并在p型层15那一侧形成以具有一个宽带隙。这有效地用来阻止射到含发光层的层14中的电子漫射到p型层15中。
掺杂p型杂质Mg的p型层15在含发光层的层14上形成。p型层可以由AlGaN、InGaN或InAlGaN制成。Zn、Be、Ca、Sr或Ba可以用作p型杂质。
p型层15可以是具有p-层和p+层的两层结构，其中低空穴密度的p-层在含发光层的层14侧，高空穴密度的p+层在电极侧。
在上述构造的发光二极管中，每个第III族氮化物化合物半导体层可以在一般条件下进行的MOCVD法形成，或以一种方法例如分子束取向附生法(MBE法)、卤化物气相取向附生法(HVPE法)、溅射法、离子镀法、电子簇射法等形成。
形成p型层15后，用蚀刻部分地除去p型层15、含发光层的层14和n型层13以显露出n型层13的一部分。
然后，Rh的p-电极18在p型层15上用气相沉积形成。由Al和V两层组成的n电极19用气相沉积在n型层13上形成。然后用已知方法进行合金化。
p侧电极膜20和n侧电极膜21中的每一个由Ti起始层20a或21a和在起始层20a或21a上层压的Au上层20b或21b组成。p侧电极膜20和n侧电极膜21中的每一个都用剥落法(lift-off method)形成。在本方案中，起始层20a和21a中每一层的膜厚设定为10nm，上层20b和21b的每层膜厚设定为1μm。
在上述过程后，用划线器等进行分割成碎片的过程。
接下来，描述用发光元件1形成发光器件的例子。图2表示使用发光元件1的倒装晶片型发光二极管2。发光二极管2一般包括发光元件1、引线框30和31、作为支架的辅助安装(sub-mount)板50、和密封树脂35。参照引线框30中杯型部分33周围的放大图(图3)将安装发光元件1的方式描述如下。
发光元件1安装在引线框30的杯型部分33中，并插有辅助安装板50。板50有p型区51和n型区52。SiO2的电绝缘膜60在板50的表面(除了形成Au块40的部分)形成。如图中所示，当发光元件1的电极侧朝下辅助安装在板50上，p侧电极膜20经Au块之一和板50的p型区51连接，同时n侧电极膜21同样经另一个Au块和板50的n型区52连接。结果，发光元件1的p电极18和n电极19分别与p型区51和n型区52电连接，这时发光元件1固定在板50上。板50用银膏61粘结并固定到引线框30的杯型部分33上，这时板50的与其上安装有发光元件1的表面相反的表面被用作粘接表面。
图4表示用发光元件1形成的另一类型的发光器件(发光二极管3)。发光二极管3是SMD(表面安装器件)型发光二极管。顺便提及，和发光二极管2相同的部分用相同的参考数字表示。
发光二极管3包括发光元件1、作为支架的板70、和反射构件80。发光元件1安装在板70上，这时发光元件1的电极侧以与发光二极管2相同的方式被用作安装表面。布线图71在板70的表面形成。当发光元件1的p侧电极膜20和n侧电极膜21经Au块40和布线图粘结时，发光元件1的两个电极电连接到布线图。反射构件80放置在板70上，使得发光元件1被反射构件80包围。反射构件80由白色树脂制成，使得反射构件80的表面能高效率地反射发光元件1照射来的光。
尽管参照具体具体方案详细地描述了本发明，但是对本领域技术熟练的人员来说，在不脱离本发明的精神和范围下进行多种变化和修改是明显的。
本申请是基于2001年6月6日提交的日本专利申请(日本专利申请2001-170908号)，其中的内容必须在这儿合成一体并作为参考。
工业实用性
本发明根本不局限于实施本发明的方案描述。本领域熟练人员容易想到的各种修改在不脱离权利要求的范围下也包括在本发明中。
公开了下面的项目。
11.第III族氮化物化合物半导体发光元件，其具有在一个表面侧形成的p侧电极和n侧电极，发光元件进一步具有在p侧电极表面上形成的含Au的p侧电极膜和在n侧电极表面形成的含Au的n侧电极膜，其中p侧电极由选自Rh、Au、Pt、Ag、Cu、Al、Ni、Co、Mg、Pd、V、Mn、Bi、Sn和Re组成的组中的一种或两种或更多种金属或它/它们的一种或多种合金制成。
12.第III族氮化物化合物半导体发光元件，其具有在一个表面侧形成的p侧电极和n侧电极，发光元件进一步具有在p侧电极表面形成的含Au的p侧电极膜和在n侧电极表面形成的含Au的n侧电极膜，其中n侧电极由选自Al、V、Sn、Ti、Cr、Nb、Ta、Mo、W和Hf组成的组中的一种或两种或更多种金属或它/它们的一种或多种合金制成。
21.一种生产有在一个表面侧形成p侧电极和n侧电极的第III族氮化物化合物半导体发光元件的方法，包括以下步骤：
在p侧电极形成含Au的p侧电极膜；
在n侧电极形成含Au的n侧电极膜。
22.根据21的生产方法，进一步包括在形成n侧电极膜前清洁n侧电极表面的步骤。
23.根据21或22的生产方法，其中形成p侧电极膜的步骤包括如下步骤：
在p侧电极上形成起始层，起始层由选自Ti、Cr、W、Mo、Ta、Zr和V组成的组中的金属或其合金制成；和
形成由Au或Au合金制成的上层。
24.根据21-23中任一种方法，其中形成n侧电极膜的步骤包括如下步骤：
在n侧电极上形成起始层，起始层由选自Ti、Cr、W、Mo、Ta、Zr和V组成的组中的金属或所述金属的合金制成；和
形成由Au或Au合金制成的上层。
25.根据21-24中任一种方法，其中形成p侧电极膜步骤中的形成上层的步骤和形成n侧电极膜的步骤中的形成上层的步骤同时进行。
26.根据21-25中任一种方法，其中形成p侧电极膜使p侧电极表面完全被p侧电极膜覆盖。
27.根据21-26中任一种方法，其中形成n侧电极膜使n侧电极表面完全被n侧电极膜覆盖。

Claims (19)

1.第III族氮化物化合物半导体发光元件，其具有在一个表面侧上形成的p侧电极和n侧电极，所述的第III族氮化物化合物半导体发光元件进一步具有：
在所述p侧电极表面上形成的含Au的p侧电极膜；和
在所述n侧电极表面上形成的含Au的n侧电极膜。
2.根据权利要求1的第III族氮化物化合物半导体发光元件，其中，所述的p侧电极膜由包括起始层和在所述的起始层上形成的上层的多个层组成，所述的起始层由选自Ti、Cr、W、Mo、Ta、Zr和V组成的组中的金属或所述金属的合金制成，所述的上层由Au或Au合金制成。
3.根据权利要求2的第III族氮化物化合物半导体发光元件，其中，所述的起始层由Ti或Ti合金制成。
4.根据权利要求1的第III族氮化物化合物半导体发光元件，其中，所述的n侧电极膜由包括起始层和在所述的起始层上形成的上层的多个层组成，所述的起始层由选自Ti、Cr、W、Mo、Ta、Zr和V组成的组中的金属或所述金属的合金制成，所述的上层由Au或Au合金制成。
5.根据权利要求4的第III族氮化物化合物半导体发光元件，其中，所述的起始层由Ti或Ti合金制成。
6.根据权利要求1的第III族氮化物化合物半导体发光元件，其中，所述的p侧电极膜和所述的n侧电极膜在层结构上是相同的。
7.根据权利要求1的第III族氮化物化合物半导体发光元件，其中，形成所述的p侧电极膜使得所述p侧电极的表面完全被所述的p侧电极膜覆盖。
8.根据权利要求1的第III族氮化物化合物半导体发光元件，其中，形成所述的n侧电极膜使得所述n侧电极的表面完全被所述的n侧电极膜覆盖。
9.一种发光器件，包括：
第III族氮化物化合物半导体发光元件，其具有在一个表面侧形成的p侧电极和n侧电极，进一步具有含Au并在所述的p侧电极表面形成的p侧电极膜和含Au并在所述的n侧电极表面形成的n侧电极膜；和
其上安装所述的发光元件的支架。
10.根据权利要求9的发光器件，其中，所述的发光元件通过Au块安装在所述的支架上。
11.根据权利要求9的发光器件，其中，所述的支架为具有和所述的p侧电极连接的p侧区以及和所述的n侧电极连接的n侧区的板。
12.根据权利要求9的发光器件，其中，所述的支架为具有和所述的p侧电极与所述的n侧电极连接的布线图的板。
13.根据权利要求9的发光器件，其中，所述的p侧电极膜由包括起始层、和在所述的起始层上形成的上层的多个层组成，所述的起始层由选自Ti、Cr、W、Mo、Ta、Zr和V组成的组中的金属或所述金属的合金制成，所述的上层由Au或Au合金制成。
14.根据权利要求13的第III族氮化物化合物半导体发光器件，其中，所述的起始层由Ti或Ti合金制成。
15.根据权利要求9的发光器件，其中，所述的n侧电极膜由包括起始层、和在所述的起始层上形成的上层的多个层组成，所述的起始层由选自Ti、Cr、W、Mo、Ta、Zr和V组成的组中的金属或所述金属的合金制成，所述的上层由Au或Au合金制成。
16.根据权利要求15的发光器件，其中，所述的起始层由Ti或Ti合金制成。
17.根据权利要求9的发光器件，其中，所述的p侧电极膜和n侧电极膜在层结构上是相同的。
18.根据权利要求9的发光器件，其中，形成所述的p侧电极膜使得所述p侧电极的表面完全被所述的p侧电极膜覆盖。
19.根据权利要求9的发光器件，其中，形成所述的n侧电极膜使得所述n侧电极的表面完全被所述的n侧电极膜覆盖。
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