TW544901B - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof Download PDF

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Publication number
TW544901B
TW544901B TW091112325A TW91112325A TW544901B TW 544901 B TW544901 B TW 544901B TW 091112325 A TW091112325 A TW 091112325A TW 91112325 A TW91112325 A TW 91112325A TW 544901 B TW544901 B TW 544901B
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TW
Taiwan
Prior art keywords
semiconductor wafer
semiconductor
wafer
semiconductor device
internal electrode
Prior art date
Application number
TW091112325A
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English (en)
Inventor
Koichi Nagao
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Matsushita Electric Ind Co Ltd
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Publication of TW544901B publication Critical patent/TW544901B/zh

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Description

544901 A7 ____ B7___ 五、發明說明（/ ) [技術領域] 本發明係關於半導體裝置及其製造方法，此半導體裝 置，具有於主面上分別形成LSI(大型積體電路)的第i LSI 晶片與第2 LSI晶片，以主面彼此對向接合的構裝體。 [習知技術] 爲求半導體積體電路裝置的低成本化與小型化，有人 提議藉由面朝下接合方式將二個LSI晶片相互接合，以形 成構裝體的COC晶片重疊(chip on chip)型半導體裝置。各 LSI晶片上，形成有例如具不同功能的LSI或藉由不同製 程形成的LSI。茲參考第8圖就此種半導體裝置例加以說 明。 第8圖所示之半導體裝置，安裝有第1 LSI晶片101 與第2 LSI晶片1〇4。在第1 LSI晶片101的形成LSI(圖略 )的主面上形成內部電極102與外部電極103。在第2 LSI 晶片104的形成LSI(圖略）的主面上形成突塊105。第1 LSI晶片101與第2 LSI晶片104於內部極102與突塊1〇5 連接狀態下，藉由面朝下接合方式接合。將絕緣性樹脂 106充塡於第1 LSI晶片101與第2 LSI晶片104之間。第 1 LSI晶片101藉軟焊料固定於引線架的晶片焊墊107上。 第1 LSI晶片101的外部電極1〇3與引線架的內引線1〇8 藉金屬細線構成的接合線109電連接。第1 LSI晶片1〇1、 第2 LSI晶片1〇4、晶片焊墊〖07、引線架1〇8以及接合線 1〇4藉封裝樹脂11〇封裝。 _ 4 木紙張尺度適用中國國家標準（CNS)A4規格（210x297公爱―) " ' - ----·——Μ---- (請先閱讀背面之注意事項再填寫本頁) 訂---------線 544901 A7 r一 _B7___ 五、發明說明（α) 上述半導體裝置，係以下述方式製造。首先，在形成 外部電極103於周緣部的第1LSI晶片101上的中央部塗覆 絕緣性樹脂106。其次，壓緊第2LSI晶片104於第1LSI 晶片101，在內部電極102與突塊1〇5連接狀態下，接合 第1LSI晶片1〇1與第2LSI晶片104。 其次，以接合線109連接第1 LSI晶片101的外部電 極103與引線架的內引線108。其次，以封裝樹脂n0封 裝第1 LSI晶片101、第2 LSI晶片104、晶片焊墊107、 內引線108以及接合線109。最後，藉由形成自封裝樹脂 110突出的引線架的外引線111，完成半導體裝置。 不過，於上述半導體裝置的構造中，在第2LSI晶片 104的外形變大，大於配置在下側的第1LSI晶片ι〇1的外 形情形下，欲裝載於引線架來構成半導體裝置時，會發生 構造上的限制。特別是難以藉接合線109連接第1LSI晶片 101的外部電極103與引線架的內引線1 〇8。 例如，在使用記憶體晶片作爲上側的第2LSI晶片104 情形下，隨著未來記憶體容量的增加，晶片外形將增大。 另一方面，在使用邏輯晶片作爲下側的第1LSI晶片101情 形下’會因加工的微細化而使晶片外形減小。因此，記憶 體晶片的外形會變得較邏輯晶片的外形大。於此情形下， 上述問題會成爲高密度半導體安裝技術的重要障礙。 對此，日本特開平10-256472號公報中，揭露了如第 9圖所示構造的半導體裝置。第2LSI晶片l〇4a具有與下 側第1LSI晶片101a相同的外形。二晶片成相互旋轉45。 5 - tr --------^--------- (請先閱讀背面之注意事項再填寫本頁) t、紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） ' ' 544901 A7 五 B7 、發明說明（；） 的狀態接合。因此，畫有陰影線的二晶片的角部112，113 不致重疊而會突出。藉由分別設置外部電極（圖略）於此角 部112，113，則無論第2LSI晶片104的外形是否增大，皆 能進行配線。 不過，利用此種角部112，113的配線的可使用外部電 極數極爲有限，難以進行可滿足的電氣連接。其原因在於 ，因晶片相互旋轉突出的面積很小之故。又，如果考慮充 塡於二晶片間的絕緣性樹脂自端部突出，形成所謂的倒角 (fillet) ’可利用的所剩突出面積即會變得更小。 [用以解決課題之手段] 本發明之目的，在提供~種能解決上述習知課題，即 使疋上側半導體晶片的外形大小較下側半導體晶片大的 COC構造，亦可將半導體晶片與引線架之間有效連接的半 導體裝置及其製造方法。 本發明的半導體裝置，具_ :引線架，具有晶粒焊塾 部和設於前述晶粒焊墊部附近的引線部；第1半導體晶片 ’於表面具有第1內部電極和第2外部電極，裝載於前述 晶粒焊墊部上；第2半導|§晶怜，Μ主 日日片於表面具有第2內部電 極和=2外部簡，表丽向接合於_第丨半導體晶片 上’前述第2內魏_突_接龍第 則外部電極：讎_脂，肋封裝前述引線部 則处弟1及弟2金屬線線。_第丨與第2半導體晶片 7^氏張尺度中關家鮮（CNS)A4規$ (21ϋ ——“--------------^--------- (請先閱讀背面之注意事項再填寫本頁) 544901 B7 五、發明說明（f ) 以各端緣實質上成平行狀態相互錯開、重疊，前述第1及 第2半導體晶片的端部的一部份自另一半導體晶片的端緣 突出，於此突出區域分別配置前述第1及第2外部電極。 根據此構造，由於各外部電極不致重疊而會突出，故 能無障礙的以金屬細線連接引線架的引線部與各外部電極 〇 又，所謂各端緣實質上平行的狀態，包含在COC安裝 製程中對準精度的範圍內，各端緣互成角度的情形。具體 而言，若在±1度以下的話，各端緣即使具有角度，亦能 在實用上獲得充分效果。 又，亦可配置成，前述第1半導體晶片的一對相對向 端部自前述第2半導體晶片的端緣突出，前述第2半導體 晶片的一對相對向端部自前述第1半導體晶片的端緣突出 。根據此構造’可簡便的積層多爲長方形晶片的記憶體晶 片和系統LSI。又，由於記憶體元件大多是具有電極焊墊 集中於二邊的構造者，故可容易使用既有的記憶體元件。 或者，亦可配置成，前述第半導體晶片之一端部自前 述第2半導體晶片的端緣突出，前述第2半導體晶片的三 個端部自則述桌1半導體晶片的端緣突出。根據此構造， 爲了使第1半導體晶片與第1半導體晶片間的電氣路徑最 短，可部份透過突塊來進行電氣連接。 或者，亦可配置成，前述第1半導體晶片與前述第2 半導體晶片沿大致對角線方向錯開配置，前述第1半導體 晶片的相鄰接的二個端部以及前述第2半導體晶片的鄰接 7 私紙張X：度適用中國國家標準（CNS)A4規格（210 X 297公釐) ~ ------ Γ请先閱讀背面之注音〗事項再填寫本頁) --------t--------- 544901 A. A/ __B7__— —_ 五、發明說明（Γ ) 的二個端部突出。根據此構造’可簡便的積層正方形晶片 Ο 上述構造中，最好是能充塡絕緣性樹脂於前述第1半 導體晶片與前述第2半導體晶片間的間隙，前述絕緣性樹 脂的端部自前述第1半導體晶片或前述第2半導體晶片的 端部伸出，形成倒角，前述第1及第2外部電極位於前述 倒角的端部外側。藉此，可有效使用第1及第2外部電極 的面積。 爲此，設在前述第1半導體晶片或前述第2半導體晶 片突出的部份中’則述第1半導體晶片成則述弟2半導體 晶片的厚度加上前述絕緣性樹脂厚度的厚度爲t，自前述第 2半導體晶片或前述第1半導體晶片的端緣至前述第1外 部電極或第2外部電極的內側端緣的距離爲L時，滿足 t<L的條件即可。 實用上，前述第2半導體晶片或前述第1半導體晶片 的端部自前述第1半導體晶片或前述第2半導體晶片的端 緣突出的長度，最好是在0.3mm(毫米）以上，2.0mm以下 〇 前述第1半導體晶片爲邏輯晶片或類比晶片，前述第 2半導體晶片爲外形面積較前述第1半導體晶片大的記憶 體晶片。於此情形下，亦可配置成，前述第2半導體晶片 的至少一邊較前述第1半導體晶片的邊長。 本發明半導體裝置之製造方法，係使表面具有第1內 部電極和第1外部電極的第1半導體晶片與表面具有第2 _ 8 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) ""— ----,-------------t---------線---r (請先閱讀背面之注意事項再填寫本頁) 544901 A7 B7 ------------ , 五、發明說明（6 ) 內部電極和第2外部電極的第2半導體晶片的表面相對向 ，將其重疊、接合，製成半導體構裝體，將前述半導體構 裝體裝載於引線架上，其特徵在於，具備：將前述第1與 第2半導體晶片，以各端緣實質上平行狀態下相互錯開、 重疊，使前述第1及第2半導體晶片的端部的一部份自另 一半導體晶片的端緣突出，在前述第1及第2外部電極分 別位於此突出區域的狀態，藉突塊連接前述第1內部電極 與前述第2內部電極，以形成前述半導體構裝體之步驟； 使用具有晶粒焊墊部和設於前述晶粒焊墊部附近的引線部 的前述引線架，於前述晶粒焊墊部表面抵接前述第1半導 體晶片，以裝載、黏接前述半導體構裝體之步驟；分別以 第1及第2金屬細線連接前述第1及第2外部電極與前述 引線部之步驟；以及，以封裝樹脂封裝前述引線架的引線 部的一部份、前述半導體構裝體、第1金屬細線及第2金 屬細線之步驟。 根據此製造方法’可將各半導體晶片的外部電極與引 線部，以金屬細線高效率的加以連接。 [圖式之簡單說明] 第1A圖，是顯示構成本發明一實施形態的半導體裝 置的半導體構裝體的俯視圖。 第1B圖’是第1A圖之A-A線剖視圖。 第2圖’是顯示使用相同半導體構裝體構成的半導體 裝置的剖視圖。 一 : --------^--------- (請先閱讀背面之注意事項再填寫本頁) 七紙張尺度ϋ中國國家標準（CNS)A4規格（210 X 297公爱） 544901 A7 _B7_ 五、發明說明（巧） 第3A〜D圖，是顯示本發明一實施形態的半導體裝置 製方法的步驟的剖視圖。 第4A〜C圖，是顯示第3D圖的後續步驟的剖視圖。 第5A〜C圖，是顯示第4C圖的後續步驟的剖視圖。 第6A〜C圖，是以示意方式顯示構成本發明實施形態 的半導體裝置的晶片配置例的俯視圖。 第7A圖，是顯示本發明另一實施形態的半導體裝置 的剖視圖。 第7B圖，是範示構成第7A圖的半導體裝置的晶片配 置的俯視圖 第8圖，是顯示習知例的半導體裝置的剖視圖。 第9圖，是以示意方式顯示構成習知例的半導體裝置 的晶片配置的俯視圖。 [符號說明] --------------------^-----------Γ (請先閱讀背面之注意事項再填寫本頁) 1 第1內部電極 2, 5 突塊 3 第1外部電極 4, 20 第1半導體晶片 6 第2內部電極 7 第2外部電極 8, 21 第2半導體晶片 9 樹脂 9a 端部 10 衣紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544901 A7 B7 五、發明說明（》） 10 晶片焊墊 11 引線部 12, 13, 23 金屬細線 14 封裝樹脂 15 半導體構裝體 22 外部電極 [較佳實施形態] (實施形態1) 茲參考圖面，就實施形態1的半導體裝置加以說明。 首先，參考第1圖，說明安裝了本實施形態的半導體 裝置的半導體構裝體。第1A圖，是顯示本實施形態的半 導體構裝體的晶片狀態的示意俯視圖，第1B圖，是沿第 1A圖的A-A1線的剖視圖。 如第1B圖所示，本實施形態的半導體構裝體具有由 第1半導體晶片4以及表面側對向第1半導體晶片4 予以接合的第2半導體晶片8構成的COC型構造。第丨半 導體晶片4具有形成於表面的第1內部電極1、形成於 第1內部電極1上第1突塊2以及形成於周邊部，與第i 內部電極1連接的第1外部電極3。第2半導體晶片8具 有形成於表面的第2內部極6、形成於此第2內部電極6 上的第2突塊5以及形成於周邊部，與第2內部電極6連 接的第2外部電極7。第1半導體晶片4的第1內部電極i 與第2半導體晶片8的第2內部電極6透過第！突塊2胃 11 Ί ^ - - - - ---^ -------I I (請先閱讀背面之注意事項再填寫本頁) 农紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544901 A7 ___ B7_____ 五、發明說明（？） 第2突塊5的接合電氣連接。以絕緣性樹脂9作爲內塡材 料，充塡於第1半導體晶片4與第2半導體晶片8之間。 如第1A圖所示，此半導構裝體的COC構件形成第2 半導體晶片8的長邊正交第1半導體晶片4的長邊的狀態 。因此，第1半導體晶片4的長邊方向兩端部自第2半導 體晶片8的側緣突出，第2半導體晶片8的長邊方向兩端 部自第1半導體晶片4的側緣突出。藉此，第1半導體晶 片4的第1外部電極3和第2半導體體晶片8的第2外部 電極7分別突出。因此，在裝載半導體構裝體於引線架之 際，第1外部電極3及第2外部電極7與引線部，即成爲 能以金屬細線無障礙的加以連接之狀態。 如第1B圖所示，能使各半導體晶片4, 8端部突出的 長度，須將充塡於二晶片間的樹脂9自端部突出而形成的 倒角列入考慮。亦即，須將突出長度設定成第1外部電極 3位於倒角的端部9a外側，第2外部電極7亦相同。 第1B圖中雖未圖示，不過，咸知通常倒角的端部9a 自半導體晶片8的端緣伸出的長度上限’爲相當於半導體 晶片8的厚度加上樹脂9厚度的厚度t的長度。因此’假 設自半導體晶片8的端緣至第1外部電極3內側端緣的距 離爲L時，若滿足t<L的條件，即能使第1外部電極3確 實地位於倒角的端部9a外側。 具體而言，爲了獲得可滿足的實用效果，最好是使從 另一半導體晶片緣部伸出的長度在〇.3mm以上，2.0mm以 下。亦即，若在〇.3mm以上，即能使外部電極的焊墊露出 ____12 __ 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------,--------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 544901 A7 __B7____ 五、發明說明（β ) 於突出部份，又，若超過的話，收納半導體晶片於 半導體裝置內的效率即不佳’不實用。 (請先閱讀背面之注意事項再填寫本頁) 第2半導體晶片8的桌2外部電極7，亦可作爲藉由 重新配線自第2內部電極6圍至晶片周邊部的外部輸出入 用電極，於擴散製程階段形成’或於安裝製程階段配線形 成。具體而言，例如在聚醯胺等絕緣樹脂上以銅配線形成 ，電極部則以鎳(Ni)和金(Au)形成。 又，作爲一例，可使第1半導體晶片4邏輯晶片，第 2半導體晶片8爲外形面積較第1半導體晶片4大的記憶 體晶片。除了邏輯電路以外’亦可於第1半導體晶片4上 形成類比電路或小容量的記憶體。 又，第1B圖中，亦顯示了形成較第1突塊2大的第2 突塊5，第1突塊2的硬度較第2突塊5高，以使第1突 塊2陷入第2突塊5的連接狀態。作爲第2突塊，可使用 錫（Sn)與銀(Ag)所構成的二元系軟焊突塊。詳細之例，有 錫（Sn)96.5[%]、銀(Ag)3.5[%]的 Sn_3.5Ag 軟焊突塊。又， 作爲第1突塊2，例如使用鎳突塊即可。最好是表面形成 微量金(Acc)層的鎳突塊。第1突塊2的鎳突塊陷入、接合 第2突塊5的軟焊突塊，於其接合界面形成鎳與錫的含金 層。 弟1突塊2可如冋弟2突塊5，爲錫(Sn)與銀(Ag)構成 的二元系軟焊突塊。 其次’就裝載上述半導體構裝體於引線架，構成半導 體的形態加以說明。第2圖，是顯示本實施形態的半導體 — —_ 13 私紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 544901 A7 __ _ B7_ 五、發明說明（（丨） 裝置的主要剖視圖。 上述半導體構裝體，係抵接第1半導體晶片4而裝載 於引線架的晶片焊墊10的表面上。引線架的引線部11的 表面與第1半導體晶片4的第1外部電極3藉第1金屬細 線12連接，引線部11的內面與第2半導體晶片8的第2 外部電極7藉第2金屬線13連接。由上述般，由於第1外 部電極3、第2外部電極7露出於各半導體晶片4, 8突出 的前端部，故可藉第1金屬細線12、第2金屬細線13加 以連接。引線部11、第1半導體晶片4、第2半導體晶片 8、第1金屬細線12及第2金屬細線13 ’係以封裝樹脂μ 加以封裝。 如上述般，本實施形態的半導體裝置’係形成爲以良 好效率內裝二個功能晶片的小型封裝體。此外，由於第2 半導體晶片8的第2外部電極7，是於安裝製程藉由重新 配線圍繞’配置於晶片周緣部’问效率形成的外部電極’ 故即使在使用邏輯晶片作爲下側的第1半導體晶片4,使 用外形面積較下側晶片大的記憶體晶片作爲上側第2半導 體晶片8的場合，亦可進行COC構造的有效電氣連接。又 ，封裝於封裝體內部的半導體構裝體，其晶片間連接非常 牢固，可確保高溫下的接合穩定性，可靠性高。作爲一例 ，在保持於150°C下，不會因歷時變化而導致接合劣化， 可確保晶片間連接的穩定性。 又，本實施形態雖然顯示其爲構成QFP(四線扁平封裝 (Quad Flat Packape)構造的半導體裝置的例，但所採用的半 14___ 衣紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公麓） ------·--------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 544901 A7 -------- -- B7___ 五、發明說明（（Z ) 導體封裝體可視需要自由設定。 其次’就上述半導體裝置的製造方法加以說明。第3a 至D圖、第4A至C圖、第5a至C圖是顯示本實施形態 半導體裝置製造方法的每一主要步驟的剖視圖。第3A至〇 、第4A至C顯示半導體構裝體的製程，第5A至e顯示 使用半導體構裝體形成樹脂封裝型半導體裝置的製程。 首先，參考第3A至D圖、第4A至C圖，說明半導 體構裝體的製程。第3A至D圖雖然僅顯示半導體晶片的 一部份’不過，實際上在複數個晶片形成的半導體晶圓狀 態下’準備第1半導體晶片4及第2半導體晶片8。 如第3A圖所示，準備於一主面上的大致中央部區域 具有第1內部電極1，於周邊區域具有第1外部電極3的 第1半導體晶片4。 其次，如第3B圖所示，形成第1突塊2使其與第1 內部電極1連接。第1突塊2與後述半導體晶片8的第2 突塊5相較，硬度較高，直徑較小，藉由化學鍍形成。此 處作爲一例，係形成表面形成了微量金(An)層的鎳(Ni)突塊 。又，於晶圓狀態下，對背面進行硏磨，以形成既定厚度 。進一步藉由切割，將形成複數個第1半導體晶片4於面 內的半導體晶圓切斷，獲得第1半導體晶片4的個別晶片 〇 作爲第1突塊2，亦可藉由電解鍍形成鈦(ΊΠ)、銅(Cu) 、鎳(Ni)的隔離層以及錫(Sn)和銀(Ag)構成的二元系軟焊突 塊。 15____ t、紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -------^--------------訂---------線 ^1* (請先閱讀背面之注意事項再填寫本頁) A7 544901 B7 ----~--- 五、發明說明（Η) 又，如第3C圖所示，準備於一主面上的大致中央部 區域具有第2內部電極6，於周邊區域具有藉由重新配線 與第2內部電極6連接之第2外部電極7的第2半導體晶 片8。雖未圖不’但於第2半導體晶片的安裝製程中，自 第2內部電極6將配線圍至晶片的周邊部，以形成第2外 部電極7。亦即，於安裝工程階段，利用重新配線技術圍 繞，形成外部電極，藉此，可對應COC連接的第1半導體 晶片4，形成符合需要的外部電極。因此，可於擴散製程 階段實現第2半導體晶片的晶片共用化。 其次，如第3D圖所示，於晶圓狀態的第2半導體晶 片8上的第2內部電極6上形成第2突塊5。作爲第2突 塊5，則藉由電解電鍍形成鈦(Ti)、銅(Cu)、鎳(Ni)的隔離 層以及錫（Sn)和銀(Ag)所構成的二元系軟焊突塊。更具體 的例，是形成錫（Sn)96.5%、銀(Ag)3.5%的Sn-3.5Ag軟焊 突塊。並且，於晶圓狀態下，對背面進行硏磨，以形成既 定厚度。進一步藉由切割，將形成複數個第2半導晶片8 切斷，形成第2半導體晶片8的個別晶片。 其次，如第4A圖所示，使用倒裝晶片接合器（圖略）， 使形成第1突塊2的第1半導體晶片4的表面與形成第2 突塊5的第2半導體晶片8的主面相向，以對準各突塊2·5 的位置。重疊的位置關係，如第1A圖所示，係第2半導 體晶片8的長邊正交於第1半導體晶片4的長邊的狀態° 藉此，第2半導體晶片8的兩端部自第1半導體晶片4的 側緣突出，第1半導體晶片4的兩端部自第2半導體晶片 _____16__--- t、紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------.-----•裘 (請先閱讀背面之注意事項再填寫本頁) 訂---------养 544901 A7 __— —_____B7_______ 五、發明說明（^) 8的側緣突出的狀態。 如第4B圖所示，對第1半導體晶片4與第2半導體 晶片8相互加壓，使用工具加熱，藉以使第1半導體晶片 4的第1突塊2陷入第2半導體晶片8的第2突塊5，以將 二突塊接合。 其次’如第4C圖所示，以不覆蓋第1外部電極3、第 2外部電極7之方式，將作爲內塡材料的超緣性樹脂9灌 入第1半導體晶片4與第2半導體晶片8間的間隙，，使 此樹脂熱硬化’以封裝間隙。藉此，形成第1半導體晶片 4的兩端部和第2半導體晶片8的兩端部彼此自對方的側 緣突出的半導體構裝體15。 其次’如第5A至C圖，就使用如以上形成的半導體 構裝體’製造半導體裝置的製程加以說明。 首先’如第5A圖所示，至少準備具有支撐半導體晶 片的晶片焊墊部10、以及配置成前端部對向晶片焊墊部1〇 之引線部11的引線架。於此引線架，以第1半導體晶片4 底面抵接晶片焊墊部1〇表面之方式，裝載半導體構裝體 15，使用黏接劑予以固定。 & 其次，如第5B圖所示，藉第丨金屬細線12電氣連接 第1半導體晶片4的第1外部電極3與引線部11的表面， 且藉第2金屬細線丨3電氣連接第2半導體晶片8的第2外 部電極7與引線部^的內·面。 其;人’如第5C圖所示，除引線部η的一部分、亦即 除外側的一部分外，將晶片焊墊部1〇、半導體構裝體15、 ------·--------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 適用*國國石票準(CNS]X^ χ; ^ --— 544901 A7 _____B7__ 五、發明說明（K ) 各金屬細線12, 13的周圍以封裝樹脂μ加以封裝。 最後，藉由切斷引線部11自封裝樹脂丨4突出的部份 而成形，完成QFP型的COC型半導體裝置。 又’本貝施形乾的丰導體裝置的製造方法，在使用邏 輯晶片作爲第1半導體晶片，使用外形面積較第i半導體 晶片大的記憶體晶片作爲第2半導體晶片的情形下，特別 有效。 其次，參考第6A至C圖，說明應用本實施形態的半 導體裝置及其製造方法時，構成半導體構裝體的各半導體 晶片的大小關係，以及晶片的重疊關係的典型例。任一構 成中，第1半導體晶片4的邊與第2半導體晶片8的邊， 均實質上相互平行配置。 首先，第6A圖所示構造與第1A圖所示者相同。此構 成是應用於一半導體晶片的長邊方向的尺寸大於另一半導 體晶片的短邊方向尺寸的關係的例。根據此構造，可簡便 的積層多爲長方形晶片的記憶體元件和系統LSI等。且由 於記憶體元件大多具有電極焊墊集中於兩邊的構造，故可 容易使用既有記憶體元件。 第6B圖所示構造是用於第2半導體晶片8的外形尺 寸整體大於第1半導體晶片4的例。第1半導體晶片4的 一個端部係錯開而自第2半導體晶片8的端緣突出。第2 半導體晶片8的三個端部則自對方的端緣突出。根據此構 造，爲了使第1半導體晶片4與第2半導體晶片8的電氣 路徑爲最短，可部份透過突塊進行電氣連接。 18 衣紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------·------裝--------訂---------線^— (請先閱讀背面之注意事項再填寫本頁) 544901 A7 _____B7______ 五、發明說明（卜） (請先閱讀背面之注意事項再填寫本頁) 第6C圖所示構造是亦可應用於二半導體晶片的大小 類似的例。第1半導體晶片4與第2半導體晶片8沿對角 線方向錯開配置。藉此，形成第1半導體晶片4的相鄰兩 端部與第2半導體晶片8的另一相鄰兩端部相互錯開的構 造。根據此構造，可簡便的積層多爲正方形晶片的不同製 程製成的元件（GaAs(砷化鎵）、Si GeC(碳化矽鍺）、CMOS( 互補金氧半導體）。又，將二半導體晶片的四邊電極焊墊大 致二等分，亦具有可分開各別使用於接合用及線接合用的 電極焊墊的優點。藉此，例如若是具有相同電極焊墊的半 導體晶片，即可沿全周方向均勻的進行打線，避免不當的 配線。 除以上所示例子外，包括各晶片上的內部電極配置以 及外部電極配置，亦可使用其他種種晶片積層形態。不過 ，第1半導體晶片4的邊與第2半導體晶片的邊實質上相 互平行配置，是發揮本發明效果的必備條件。根據此條件 ，可充份確保供配置外部電極的露出面積。 . (實施形態2) 茲參考第7A圖、第7B圖，就實施形態2的半導體裝 置加以說明。 第7Α圖是顯示本實施形態的半導體裝置的剖視圖， 弟7 Β圖是駆不各日日片的外形大小關係和積層狀態的俯視 圖。 基本上，本實施形態的半導體裝置具有與第2圖所示 者相同的構造。構成構裝體的二個半導體晶片4，8的外形 ____ 19 ^纸張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐）" * 544901 A7 五、發明說明（（Γ7 ) 大小的彼此關係不同。 (請先閱讀背面之注意事項再填寫本頁) 如第7B圖所示，本實施形態中，第2半導體晶片21 的尺寸整體較第1半導體晶片20大，四個端部全部自第i 半導體晶片20突出。因此，如第7A圖所示，於第丨半導 體晶片20未設置外部電極。於第2半導體晶片21，在周 邊部形成、露出與第2內部電極6連接的外部電極22。 由弟1半1導體晶片2〇和第2半導體晶片21構成的半 導體構裝體，是將第丨半導體晶片20抵接而裝載於引線架 10的表面上。引線架的引線部n內面與第2半導體晶片 21的外部電極22藉金屬細線23連接。 本實施胗態中，亦可以邏輯晶片作爲第1半導體晶片 20，以記憶體晶片作爲第2半導體晶片。又，第2半導體 晶片21的外苦(5電極22可作爲藉由重新配線自第2內部電 極6圍至晶片周邊部的外部輸出輸入用電極。據此，即使 第2半導體晶片使用外形面積較下側晶片大的記億體晶片 ’亦可有效實現COC構造。 ----------20 中國®家標準（CNS)A4規格（210 x 297公爱）

Claims (1)

  1. 544901 as B8 C8 D8 六、申請專利範圍 1 · 一種半導體裝置，其特徵在於，具備： (請先閲讀背面之注意事項再塡寫本頁) 引線架，具有晶粒焊墊部和設於前述晶粒焊墊部附近 的引線部； 第1半導體晶片，於表面具有第1內部電極和第2外 部電極，裝載於前述晶粒焊墊部上； 第2半導體晶片，於表面具有第2內部電極和第2外 咅電極，表面對向接合於前述第丨半導體晶片上，前述第 2內部電極藉突塊連接前述第1內部電極； 第1和第2金屬細線，係分別連接前述引線部與前述 第1及前述第2外部電極；以及 封裝樹脂，用以封裝前述引線部、前述第1及第2金 屬線線， 前述第1與第2半導體晶片以各端緣實質上成平行狀 態相互錯開、重疊，前述第1及第2半導體晶片的端部的 一部份自另一半導體晶片的端緣突出，於此突出區域分別 配置前述第1及第2外部電極。 2 ·如申請專利範圍第1項之半導體裝置，其中，前述 第1半導體晶片的一對相對向的端部自前述第2半導體晶 片的端緣突出，前述第2半導體晶片的一對相對向的端部 自前述第1半導體晶片的端緣突出。 3 ·如申請專利範圍第1項之半導體裝置，其中，前述 第1半導體晶片之一端部自前述第2半導體晶片的端緣突 出，則述弟2半導體晶片的二個顺部自則述第1半導體晶 片的端緣突出。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公漦） 544901 A8 B8 C8 D8 ------------ 六、申請專利範圍 4 ·如申請專利範圍第丨項之半導體裝置，宜中，前述 第1半導體晶片與前述第2半導體晶片沿大致對角線方向 錯開配置，使前述第i半導體晶片的二個相鄰端部以及前 述第2半導體晶片的二個相鄰端部突出。 5 ·如申請專利範圍第！項之半導體裝置，其中，充塡 糸色緣性樹脂於前述第1半導體晶片與前述第2 ^導體晶片 間的間隙，前述絕緣性樹脂的端部自前述第丨半導體晶片 或則述桌2半導體晶片的端部伸出，形成倒角，前述第^ 及第2外部電極位於前述倒角端部的外側。 6 ·如申請專利範圍第5項之半導體裝置，其中，設前 述第1半導體晶片或前述第2半導體晶片突出的部份中， 則述第1半導體晶片或前述第2半導體晶片的厚度與前述 絕緣性樹脂的厚度相加的厚度爲t，自前述第2半導體晶片 或前述第1半導體晶片的端緣至前述第1外部電極或第2 外部電極的內側端緣的距離爲L時，滿足t<L的條件。 7 ·如申請專利範圍第5項之半導體裝置，其中，自前 述第1半導體晶片或前述第2半導體晶片的端緣突出的前 述第2半導體晶片或前述第1半導體晶片的端部的長度爲 0.3mm〜2.0mm 〇 8 ·如申請專利範圍第1項之半導體裝置，其中，前述 第1半導體晶片是邏輯晶片或類比晶片，前述第2半導體 晶片是外形面積較前述第1半導體晶片大的記憶體晶片。 9 ·如申請專利範圍第8項之半導體裝置，其中，前述 第2半導體晶片的至少一邊較前述第1半導體晶片的邊長 .......------ (請先閲讀背面之注意事項再塡寫本頁) 訂： 線一 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐) 544901 A8 B8 C8 D8 六、申請專利範圍 (請先閱讀背面之注意事項再塡寫本頁) 10 · —種半導體裝置之製造方法，係使表面具有第1 內部電極和第1外部電極的第1半導體晶片與表面具有第 2內部電極和第2外部電極的第2半導體晶片的表面相對 向，將其重疊、接合，製成半導體構裝體，將前述半導體 構裝體裝載於引線架上，其特徵在於，具備： 將前述第1與第2半導體晶片，以各端緣實質上平行 狀態下相互錯開、重疊，使前述第1及第2半導體晶片的 端部的一部份自另一半導體晶片的端緣突出，在前述第1 及第2外部電極分別位於此突出區域的狀態，藉突塊連接 前述第1內部電極與前述第2內部電極，以形成前述半導 體構裝體之步驟； 使用具有晶粒焊墊部和設於前述晶粒焊墊部附近的引 線部的前述引線架，於前述晶粒焊墊部表面抵接前述第1 半導體晶片，以裝載、黏接前述半導體構裝體之步驟； 分別以第1及第2金屬細線連接前述第1及第2外部 電極與前述引線部之步驟；以及 以封裝樹脂封裝前述引線架的引線部的一部份、前述 半導體構裝體、第1金屬細線及第2金屬細線之步驟。 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐)
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CN1391278A (zh) 2003-01-15
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KR20020095123A (ko) 2002-12-20
CN1267993C (zh) 2006-08-02
US6677674B2 (en) 2004-01-13

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