TW522474B - A substrate processing apparatus with the same - Google Patents

A substrate processing apparatus with the same Download PDF

Info

Publication number
TW522474B
TW522474B TW090106943A TW90106943A TW522474B TW 522474 B TW522474 B TW 522474B TW 090106943 A TW090106943 A TW 090106943A TW 90106943 A TW90106943 A TW 90106943A TW 522474 B TW522474 B TW 522474B
Authority
TW
Taiwan
Prior art keywords
wafer
substrate
processed
heater
heating unit
Prior art date
Application number
TW090106943A
Other languages
English (en)
Chinese (zh)
Inventor
Seiyo Nakashima
Michiko Nishiwaki
Yukinori Aburatani
Satoshi Okada
Eisuke Nishitani
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Application granted granted Critical
Publication of TW522474B publication Critical patent/TW522474B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2005—Seal mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW090106943A 2000-03-24 2001-03-23 A substrate processing apparatus with the same TW522474B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000084590A JP4203206B2 (ja) 2000-03-24 2000-03-24 基板処理装置

Publications (1)

Publication Number Publication Date
TW522474B true TW522474B (en) 2003-03-01

Family

ID=18601049

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090106943A TW522474B (en) 2000-03-24 2001-03-23 A substrate processing apparatus with the same

Country Status (4)

Country Link
US (2) US20020017363A1 (https=)
JP (1) JP4203206B2 (https=)
KR (1) KR100491680B1 (https=)
TW (1) TW522474B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI484561B (zh) * 2010-10-07 2015-05-11 漢民科技股份有限公司 加熱器組件及運用此加熱器組件的晶圓處理裝置
TWI594298B (zh) * 2011-07-22 2017-08-01 應用材料股份有限公司 於基板上沉積材料之方法及設備
CN108677168A (zh) * 2018-07-05 2018-10-19 福建省福联集成电路有限公司 一种改善化学气相沉积加热均匀度的装置

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004030411A1 (ja) * 2002-09-27 2004-04-08 Sumitomo Electric Industries, Ltd. ウエハー保持体及び半導体製造装置
JP4417669B2 (ja) * 2003-07-28 2010-02-17 日本エー・エス・エム株式会社 半導体処理装置および半導体ウエハーの導入方法
US20050229849A1 (en) * 2004-02-13 2005-10-20 Applied Materials, Inc. High productivity plasma processing chamber
CN101128622B (zh) * 2005-02-22 2010-08-25 埃克提斯公司 具有副腔的蚀刻腔
TWI327339B (en) * 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
TWI354320B (en) * 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
JP5032828B2 (ja) * 2006-11-09 2012-09-26 株式会社ニューフレアテクノロジー 気相成長装置
CN101802986B (zh) * 2007-07-11 2012-09-26 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
KR101419389B1 (ko) * 2007-07-25 2014-07-21 주성엔지니어링(주) 기판 지지 어셈블리 및 이를 포함하는 기판 처리 장치
KR100902619B1 (ko) * 2007-08-29 2009-06-11 세메스 주식회사 기판 처리장치 및 그 방법
JP5038073B2 (ja) * 2007-09-11 2012-10-03 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP5283370B2 (ja) * 2007-11-29 2013-09-04 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
WO2009091189A2 (en) * 2008-01-16 2009-07-23 Sosul Co., Ltd. Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same
US10192760B2 (en) 2010-07-29 2019-01-29 Eugene Technology Co., Ltd. Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit
KR100943427B1 (ko) * 2008-02-04 2010-02-19 주식회사 유진테크 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법
JP2009270143A (ja) * 2008-05-02 2009-11-19 Nuflare Technology Inc サセプタ、半導体製造装置及び半導体製造方法
WO2010026955A1 (ja) * 2008-09-08 2010-03-11 芝浦メカトロニクス株式会社 基板保持部材、基板処理装置、基板処理方法
JP5208850B2 (ja) * 2009-05-14 2013-06-12 株式会社ニューフレアテクノロジー 成膜装置
KR20100129566A (ko) * 2009-06-01 2010-12-09 주식회사 유진테크 기판지지유닛 및 이를 포함하는 기판처리장치
JP5275935B2 (ja) * 2009-07-15 2013-08-28 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP5183659B2 (ja) * 2010-03-23 2013-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラム及びコンピュータ記憶媒体
JP5615102B2 (ja) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー 半導体製造方法及び半導体製造装置
US8956979B2 (en) * 2011-11-17 2015-02-17 Skyworks Solutions, Inc. Systems and methods for improving front-side process uniformity by back-side metallization
KR101312592B1 (ko) * 2012-04-10 2013-09-30 주식회사 유진테크 히터 승강형 기판 처리 장치
JP5955394B2 (ja) * 2012-09-06 2016-07-20 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR101440307B1 (ko) * 2012-09-17 2014-09-18 주식회사 유진테크 기판처리장치
JP6131162B2 (ja) 2012-11-08 2017-05-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2014158370A2 (en) 2013-03-14 2014-10-02 Applied Materials, Inc. Temperature measurement in multi-zone heater
US20140263275A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Rotation enabled multifunctional heater-chiller pedestal
JP6444641B2 (ja) * 2014-07-24 2018-12-26 株式会社ニューフレアテクノロジー 成膜装置、サセプタ、及び成膜方法
DE102014223301B8 (de) 2014-11-14 2016-06-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
US10109510B2 (en) * 2014-12-18 2018-10-23 Varian Semiconductor Equipment Associates, Inc. Apparatus for improving temperature uniformity of a workpiece
CN107408505B (zh) * 2015-02-25 2021-03-09 株式会社国际电气 衬底处理装置、加热器及半导体器件的制造方法
JP6622597B2 (ja) * 2016-01-12 2019-12-18 大陽日酸株式会社 気相成長装置
US20180033673A1 (en) * 2016-07-26 2018-02-01 Applied Materials, Inc. Substrate support with in situ wafer rotation
DE102017206671A1 (de) * 2017-04-20 2018-10-25 Siltronic Ag Suszeptor zum Halten einer Halbleiterscheibe mit Orientierungskerbe während des Abscheidens einer Schicht auf einer Vorderseite der Halbleiterscheibe und Verfahren zum Abscheiden der Schicht unter Verwendung des Suszeptors
KR20190067356A (ko) * 2017-12-07 2019-06-17 삼성전자주식회사 막 형성 장치
US20220243325A1 (en) * 2019-02-05 2022-08-04 Veeco Instruments, Inc. Rotating Disk Reactor with Split Substrate Carrier
JP2021012944A (ja) * 2019-07-05 2021-02-04 東京エレクトロン株式会社 基板処理装置及び基板の受け渡し方法
CN111705302B (zh) * 2020-08-18 2020-11-10 上海陛通半导体能源科技股份有限公司 可实现晶圆平稳升降的气相沉积设备
KR102810675B1 (ko) * 2020-12-16 2025-05-23 주식회사 원익아이피에스 기판 처리 장치
US20250085056A1 (en) * 2023-09-07 2025-03-13 Applied Materials, Inc. Process chamber substrate transfer
WO2025085307A2 (en) * 2023-10-16 2025-04-24 Cvd Equipment Corporation Improvements in chemical vapor deposition systems

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102746A (ja) * 1983-11-10 1985-06-06 Toshiba Corp Ｃｖｄ装置
US5421893A (en) * 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
JPH07111245A (ja) * 1993-10-12 1995-04-25 Fuji Electric Co Ltd 気相成長装置
US5421983A (en) * 1993-11-12 1995-06-06 E. I. Du Pont De Nemours And Company Anion selective electrodes containing fumed silica
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
JP4146905B2 (ja) * 1997-04-11 2008-09-10 東京エレクトロン株式会社 処理装置
US6007635A (en) * 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US20010052392A1 (en) * 1998-02-25 2001-12-20 Masahiko Nakamura Multichamber substrate processing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI484561B (zh) * 2010-10-07 2015-05-11 漢民科技股份有限公司 加熱器組件及運用此加熱器組件的晶圓處理裝置
TWI594298B (zh) * 2011-07-22 2017-08-01 應用材料股份有限公司 於基板上沉積材料之方法及設備
CN108677168A (zh) * 2018-07-05 2018-10-19 福建省福联集成电路有限公司 一种改善化学气相沉积加热均匀度的装置
CN108677168B (zh) * 2018-07-05 2023-11-21 福建省福联集成电路有限公司 一种改善化学气相沉积加热均匀度的装置

Also Published As

Publication number Publication date
US20060075972A1 (en) 2006-04-13
JP4203206B2 (ja) 2008-12-24
KR20010090517A (ko) 2001-10-18
KR100491680B1 (ko) 2005-05-27
US20020017363A1 (en) 2002-02-14
JP2001274094A (ja) 2001-10-05

Similar Documents

Publication Publication Date Title
TW522474B (en) A substrate processing apparatus with the same
KR100891259B1 (ko) 기판 처리 장치, 기판 보관 유지 장비, 및 반도체 장치의 제조 방법
JP5188326B2 (ja) 半導体装置の製造方法、基板処理方法、及び基板処理装置
JPH11111626A (ja) 熱処理装置のシャワーヘッド構造
TW201104748A (en) Substrate processing apparatus
WO2005124840A1 (ja) 熱処理装置
US10790182B2 (en) Substrate holding mechanism and substrate processing apparatus using the same
US6861321B2 (en) Method of loading a wafer onto a wafer holder to reduce thermal shock
US6971835B2 (en) Vapor-phase epitaxial growth method
JPWO2007018139A1 (ja) 半導体装置の製造方法および基板処理装置
US12344935B2 (en) Substrate processing apparatus, heat insulator assembly and method of manufacturing semiconductor device
KR20190012965A (ko) 기판 처리 장치 및 방법
KR102188354B1 (ko) 기판 처리 장치 및 방법
KR101420285B1 (ko) 반도체 제조설비 그의 웨이퍼 로딩/언로딩 방법
KR101421645B1 (ko) 기판처리장치
JP2002026112A (ja) 基板処理装置
KR101458962B1 (ko) 급속 열처리 장치
JP2006344997A (ja) 基板処理装置および基板処理方法
KR100918663B1 (ko) 반도체 제조 장치
KR20180054948A (ko) 기판 처리 장치 및 방법
JP2006237262A (ja) 加熱処理装置
KR100890921B1 (ko) 반도체 제조 장치
JP3073728B2 (ja) 枚葉式の熱処理装置
JP4167523B2 (ja) 基板処理装置
JP2005050841A (ja) 基板処理装置および半導体装置の製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees