DE102014223301B8 - Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant - Google Patents

Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant Download PDF

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Publication number
DE102014223301B8
DE102014223301B8 DE102014223301.1A DE102014223301A DE102014223301B8 DE 102014223301 B8 DE102014223301 B8 DE 102014223301B8 DE 102014223301 A DE102014223301 A DE 102014223301A DE 102014223301 B8 DE102014223301 B8 DE 102014223301B8
Authority
DE
Germany
Prior art keywords
substrate holder
plasma reactor
depositing diamond
diamond
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102014223301.1A
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English (en)
Other versions
DE102014223301B3 (de
Inventor
Christoph Nebel
Wolfgang Müller-Sebert
Claudia Widmann
Christoph Schreyvogel
Nicola Lang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority to DE102014223301.1A priority Critical patent/DE102014223301B8/de
Priority to IL242527A priority patent/IL242527B/en
Priority to US14/937,359 priority patent/US10100433B2/en
Application granted granted Critical
Publication of DE102014223301B3 publication Critical patent/DE102014223301B3/de
Publication of DE102014223301B8 publication Critical patent/DE102014223301B8/de
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Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/276—Diamond only using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
DE102014223301.1A 2014-11-14 2014-11-14 Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant Active DE102014223301B8 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE102014223301.1A DE102014223301B8 (de) 2014-11-14 2014-11-14 Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
IL242527A IL242527B (en) 2014-11-14 2015-11-10 Substrate holder, plasma reactor and method for depositing diamond
US14/937,359 US10100433B2 (en) 2014-11-14 2015-11-10 Substrate holder, plasma reactor and method for depositing diamond

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102014223301.1A DE102014223301B8 (de) 2014-11-14 2014-11-14 Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant

Publications (2)

Publication Number Publication Date
DE102014223301B3 DE102014223301B3 (de) 2016-03-10
DE102014223301B8 true DE102014223301B8 (de) 2016-06-09

Family

ID=55358722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014223301.1A Active DE102014223301B8 (de) 2014-11-14 2014-11-14 Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant

Country Status (3)

Country Link
US (1) US10100433B2 (de)
DE (1) DE102014223301B8 (de)
IL (1) IL242527B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112871109A (zh) * 2021-01-12 2021-06-01 广州德蔓生物科技有限公司 一种等离子体色素抑制反应装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397396A (en) * 1993-12-27 1995-03-14 General Electric Company Apparatus for chemical vapor deposition of diamond including thermal spreader
US5474612A (en) * 1990-03-19 1995-12-12 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus and vapor-phase deposition method
US20020017363A1 (en) * 2000-03-24 2002-02-14 Seiyo Nakashima Substrate processing apparatus and substrate processing method
WO2003040440A2 (en) * 2001-11-07 2003-05-15 Carnegie Institution Of Washington Apparatus and method for diamond production
DE10323085A1 (de) * 2003-05-22 2004-12-09 Aixtron Ag CVD-Beschichtungsvorrichtung
US20120145080A1 (en) * 2010-12-13 2012-06-14 Youngkyou Park Substrate support unit, and apparatus and method for depositing thin layer using the same
DE102013012082A1 (de) * 2013-07-22 2015-01-22 Aixtron Se Vorrichtung zum thermischen Behandeln eines Halbleitersubstrates, insbesondere zum Aufbringen einer Beschichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5209182A (en) * 1989-12-01 1993-05-11 Kawasaki Steel Corporation Chemical vapor deposition apparatus for forming thin film
US5443032A (en) 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
TWI410538B (zh) * 2005-11-15 2013-10-01 Carnegie Inst Of Washington 建基於以快速生長速率製造之單晶ｃｖｄ鑽石的新穎鑽石的用途／應用
WO2009114130A2 (en) * 2008-03-13 2009-09-17 Michigan State University Process and apparatus for diamond synthesis
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
US20120234229A1 (en) * 2011-03-16 2012-09-20 Applied Materials, Inc. Substrate support assembly for thin film deposition systems

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474612A (en) * 1990-03-19 1995-12-12 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus and vapor-phase deposition method
US5397396A (en) * 1993-12-27 1995-03-14 General Electric Company Apparatus for chemical vapor deposition of diamond including thermal spreader
US20020017363A1 (en) * 2000-03-24 2002-02-14 Seiyo Nakashima Substrate processing apparatus and substrate processing method
WO2003040440A2 (en) * 2001-11-07 2003-05-15 Carnegie Institution Of Washington Apparatus and method for diamond production
DE10323085A1 (de) * 2003-05-22 2004-12-09 Aixtron Ag CVD-Beschichtungsvorrichtung
US20120145080A1 (en) * 2010-12-13 2012-06-14 Youngkyou Park Substrate support unit, and apparatus and method for depositing thin layer using the same
DE102013012082A1 (de) * 2013-07-22 2015-01-22 Aixtron Se Vorrichtung zum thermischen Behandeln eines Halbleitersubstrates, insbesondere zum Aufbringen einer Beschichtung

Also Published As

Publication number Publication date
US20160138189A1 (en) 2016-05-19
US10100433B2 (en) 2018-10-16
DE102014223301B3 (de) 2016-03-10
IL242527B (en) 2020-05-31

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