KR100491680B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR100491680B1
KR100491680B1 KR10-2001-0015052A KR20010015052A KR100491680B1 KR 100491680 B1 KR100491680 B1 KR 100491680B1 KR 20010015052 A KR20010015052 A KR 20010015052A KR 100491680 B1 KR100491680 B1 KR 100491680B1
Authority
KR
South Korea
Prior art keywords
susceptor
substrate
wafer
heating unit
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR10-2001-0015052A
Other languages
English (en)
Korean (ko)
Other versions
KR20010090517A (ko
Inventor
나카시마세이요
니시와키미치코
아부라타니유키노리
오카다사토시
니시타니에이스케
나카고미가즈히로
이케다가즈히토
시메노가즈히로
오타가쿠지
가사나미가츠히사
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 고쿠사이 덴키 filed Critical 가부시키가이샤 히다치 고쿠사이 덴키
Publication of KR20010090517A publication Critical patent/KR20010090517A/ko
Application granted granted Critical
Publication of KR100491680B1 publication Critical patent/KR100491680B1/ko
Assigned to 가부시키가이샤 코쿠사이 엘렉트릭 reassignment 가부시키가이샤 코쿠사이 엘렉트릭 권리의 전부이전등록 Assignors: 가부시키가이샤 히다치 고쿠사이 덴키
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2005—Seal mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR10-2001-0015052A 2000-03-24 2001-03-23 기판 처리 장치 및 기판 처리 방법 Expired - Lifetime KR100491680B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000084590A JP4203206B2 (ja) 2000-03-24 2000-03-24 基板処理装置
JP2000-084590 2000-03-24

Publications (2)

Publication Number Publication Date
KR20010090517A KR20010090517A (ko) 2001-10-18
KR100491680B1 true KR100491680B1 (ko) 2005-05-27

Family

ID=18601049

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0015052A Expired - Lifetime KR100491680B1 (ko) 2000-03-24 2001-03-23 기판 처리 장치 및 기판 처리 방법

Country Status (4)

Country Link
US (2) US20020017363A1 (https=)
JP (1) JP4203206B2 (https=)
KR (1) KR100491680B1 (https=)
TW (1) TW522474B (https=)

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WO2004030411A1 (ja) * 2002-09-27 2004-04-08 Sumitomo Electric Industries, Ltd. ウエハー保持体及び半導体製造装置
JP4417669B2 (ja) * 2003-07-28 2010-02-17 日本エー・エス・エム株式会社 半導体処理装置および半導体ウエハーの導入方法
US20050229849A1 (en) * 2004-02-13 2005-10-20 Applied Materials, Inc. High productivity plasma processing chamber
CN101128622B (zh) * 2005-02-22 2010-08-25 埃克提斯公司 具有副腔的蚀刻腔
TWI327339B (en) * 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
TWI354320B (en) * 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
JP5032828B2 (ja) * 2006-11-09 2012-09-26 株式会社ニューフレアテクノロジー 気相成長装置
CN101802986B (zh) * 2007-07-11 2012-09-26 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
KR101419389B1 (ko) * 2007-07-25 2014-07-21 주성엔지니어링(주) 기판 지지 어셈블리 및 이를 포함하는 기판 처리 장치
KR100902619B1 (ko) * 2007-08-29 2009-06-11 세메스 주식회사 기판 처리장치 및 그 방법
JP5038073B2 (ja) * 2007-09-11 2012-10-03 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP5283370B2 (ja) * 2007-11-29 2013-09-04 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
WO2009091189A2 (en) * 2008-01-16 2009-07-23 Sosul Co., Ltd. Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same
US10192760B2 (en) 2010-07-29 2019-01-29 Eugene Technology Co., Ltd. Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit
KR100943427B1 (ko) * 2008-02-04 2010-02-19 주식회사 유진테크 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법
JP2009270143A (ja) * 2008-05-02 2009-11-19 Nuflare Technology Inc サセプタ、半導体製造装置及び半導体製造方法
WO2010026955A1 (ja) * 2008-09-08 2010-03-11 芝浦メカトロニクス株式会社 基板保持部材、基板処理装置、基板処理方法
JP5208850B2 (ja) * 2009-05-14 2013-06-12 株式会社ニューフレアテクノロジー 成膜装置
KR20100129566A (ko) * 2009-06-01 2010-12-09 주식회사 유진테크 기판지지유닛 및 이를 포함하는 기판처리장치
JP5275935B2 (ja) * 2009-07-15 2013-08-28 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP5183659B2 (ja) * 2010-03-23 2013-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラム及びコンピュータ記憶媒体
JP5615102B2 (ja) * 2010-08-31 2014-10-29 株式会社ニューフレアテクノロジー 半導体製造方法及び半導体製造装置
US20120085747A1 (en) * 2010-10-07 2012-04-12 Benson Chao Heater assembly and wafer processing apparatus using the same
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US8956979B2 (en) * 2011-11-17 2015-02-17 Skyworks Solutions, Inc. Systems and methods for improving front-side process uniformity by back-side metallization
KR101312592B1 (ko) * 2012-04-10 2013-09-30 주식회사 유진테크 히터 승강형 기판 처리 장치
JP5955394B2 (ja) * 2012-09-06 2016-07-20 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR101440307B1 (ko) * 2012-09-17 2014-09-18 주식회사 유진테크 기판처리장치
JP6131162B2 (ja) 2012-11-08 2017-05-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2014158370A2 (en) 2013-03-14 2014-10-02 Applied Materials, Inc. Temperature measurement in multi-zone heater
US20140263275A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Rotation enabled multifunctional heater-chiller pedestal
JP6444641B2 (ja) * 2014-07-24 2018-12-26 株式会社ニューフレアテクノロジー 成膜装置、サセプタ、及び成膜方法
DE102014223301B8 (de) 2014-11-14 2016-06-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter, Plasmareaktor und Verfahren zur Abscheidung von Diamant
US10109510B2 (en) * 2014-12-18 2018-10-23 Varian Semiconductor Equipment Associates, Inc. Apparatus for improving temperature uniformity of a workpiece
CN107408505B (zh) * 2015-02-25 2021-03-09 株式会社国际电气 衬底处理装置、加热器及半导体器件的制造方法
JP6622597B2 (ja) * 2016-01-12 2019-12-18 大陽日酸株式会社 気相成長装置
US20180033673A1 (en) * 2016-07-26 2018-02-01 Applied Materials, Inc. Substrate support with in situ wafer rotation
DE102017206671A1 (de) * 2017-04-20 2018-10-25 Siltronic Ag Suszeptor zum Halten einer Halbleiterscheibe mit Orientierungskerbe während des Abscheidens einer Schicht auf einer Vorderseite der Halbleiterscheibe und Verfahren zum Abscheiden der Schicht unter Verwendung des Suszeptors
KR20190067356A (ko) * 2017-12-07 2019-06-17 삼성전자주식회사 막 형성 장치
CN108677168B (zh) * 2018-07-05 2023-11-21 福建省福联集成电路有限公司 一种改善化学气相沉积加热均匀度的装置
US20220243325A1 (en) * 2019-02-05 2022-08-04 Veeco Instruments, Inc. Rotating Disk Reactor with Split Substrate Carrier
JP2021012944A (ja) * 2019-07-05 2021-02-04 東京エレクトロン株式会社 基板処理装置及び基板の受け渡し方法
CN111705302B (zh) * 2020-08-18 2020-11-10 上海陛通半导体能源科技股份有限公司 可实现晶圆平稳升降的气相沉积设备
KR102810675B1 (ko) * 2020-12-16 2025-05-23 주식회사 원익아이피에스 기판 처리 장치
US20250085056A1 (en) * 2023-09-07 2025-03-13 Applied Materials, Inc. Process chamber substrate transfer
WO2025085307A2 (en) * 2023-10-16 2025-04-24 Cvd Equipment Corporation Improvements in chemical vapor deposition systems

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JPS60102746A (ja) * 1983-11-10 1985-06-06 Toshiba Corp Ｃｖｄ装置
JPH07111245A (ja) * 1993-10-12 1995-04-25 Fuji Electric Co Ltd 気相成長装置
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JP4146905B2 (ja) * 1997-04-11 2008-09-10 東京エレクトロン株式会社 処理装置
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Patent Citations (3)

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JPS60102746A (ja) * 1983-11-10 1985-06-06 Toshiba Corp Ｃｖｄ装置
JPH07111245A (ja) * 1993-10-12 1995-04-25 Fuji Electric Co Ltd 気相成長装置
KR19990071449A (ko) * 1998-02-25 1999-09-27 니시히라 순지 멀티챔버 기판처리장치

Also Published As

Publication number Publication date
US20060075972A1 (en) 2006-04-13
JP4203206B2 (ja) 2008-12-24
KR20010090517A (ko) 2001-10-18
TW522474B (en) 2003-03-01
US20020017363A1 (en) 2002-02-14
JP2001274094A (ja) 2001-10-05

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