KR20010090517A - 기판 처리 장치 및 기판 처리 방법 - Google Patents
기판 처리 장치 및 기판 처리 방법 Download PDFInfo
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- KR20010090517A KR20010090517A KR1020010015052A KR20010015052A KR20010090517A KR 20010090517 A KR20010090517 A KR 20010090517A KR 1020010015052 A KR1020010015052 A KR 1020010015052A KR 20010015052 A KR20010015052 A KR 20010015052A KR 20010090517 A KR20010090517 A KR 20010090517A
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2005—Seal mechanisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
Description
Claims (12)
- 피처리 기판이 재치되는 서셉터와, 상기 서셉터의 하방에 배치되어 상기 서셉터에 재치된 상기 피처리 기판을 가열하는 가열 유닛을 처리실 내에 구비하고 있고, 상기 서셉터와 상기 가열 유닛이 상대적으로 회전된 상태로 상기 피처리 기판에 처리가 행해지는 기판 처리 장치로서,적어도 상기 서셉터가 상기 처리실 내에서 승강하도록 구성되어 있고, 상기 처리실에는 상기 피처리 기판을 적어도 상기 서셉터의 일부에 대해 승강시키는 피처리 기판 승강 장치가 설치되어 있는 것을 특징으로 하는 기판 처리 장치.
- 제 1 항에 있어서, 상기 가열 유닛을 상기 처리실 내에서 승강하도록 구성하고, 상기 피처리 기판 승강 장치가 상기 서셉터 및 상기 가열 유닛의 승강에 연계하여 상기 피처리 기판을 적어도 상기 서셉터의 일부에 대해 승강시키도록 구성되어 있는 것을 특징으로 하는 기판 처리 장치.
- 제 1 항에 있어서, 상기 피처리 기판을 적어도 상기 서셉터의 일부에 대해 승강시킬 때는, 상기 서셉터와 상기 가열 유닛의 거리를 일정하게 유지한 상태로 승강시키도록 구성되어 있는 것을 특징으로 하는 기판 처리 장치.
- 제 1 항에 있어서, 상기 피처리 기판 승강 장치가 상기 서셉터의 외측에 설치되어 있는 것을 특징으로 하는 기판 처리 장치.
- 제 1 항에 있어서, 상기 피처리 기판 승강 장치가 상기 서셉터의 내측에 설치되어 있는 것을 특징으로 하는 기판 처리 장치.
- 제 1 항에 있어서, 상기 서셉터는 중앙 부재와 주변 부재를 구비하고 있으며, 상기 피처리 기판 승강 장치가 상기 서셉터의 중앙 부재를 승강시키도록 구성되어 있는 것을 특징으로 하는 기판 처리 장치.
- 제 6 항에 있어서, 상기 가열 유닛의 히터는 상기 서셉터의 중앙 부재에 대응하는 중앙 히터 부재와, 상기 서셉터의 주변 부재에 대응하는 주변 히터 부재를 구비하고 있으며, 이 중앙 히터 부재와 주변 히터 부재는 출력이 독립적으로 제어되고, 서셉터의 중앙 부재가 승강되고 있는 동안에는 중앙 히터 부재의 출력을 증대시켜 제어하여 이루어지도록 구성되어 있는 것을 특징으로 하는 기판 처리 장치.
- 처리실 내에 설치되어 피처리 기판이 재치되는 서셉터와, 상기 처리실 내의 상기 서셉터의 하방에 배치되어 상기 서셉터에 재치된 상기 피처리 기판을 가열하는 가열 유닛을 구비하고 있는 기판 처리 장치로서,상기 서셉터의 주변부의 상면이 상기 재치된 피처리 기판의 상면과 일치되는 것을 특징으로 하는 기판 처리 장치.
- 제 8 항에 있어서, 상기 서셉터의 외주에 상기 서셉터의 상면이 일치하는 석영으로 이루어지는 부재를 배치하는 것을 특징으로 하는 기판 처리 장치.
- 피처리 기판이 재치되는 서셉터와, 상기 서셉터의 하방에 배치되어 상기 서셉터에 재치된 상기 피처리 기판을 가열하는 가열 유닛을 처리실 내에 구비하고 있고, 상기 서셉터와 상기 가열 유닛이 상대적으로 회전된 상태로 상기 피처리 기판에 처리가 행해지는 기판 처리 장치에서, 적어도 상기 서셉터가 상기 처리실 내에서 승강하도록 구성되어 있고, 상기 처리실에는 상기 피처리 기판을 적어도 상기 서셉터의 일부에 대해 승강시키는 피처리 기판 승강 장치가 설치되어 있는 상기 기판 처리 장치가 사용되는 기판 처리 방법으로서,상기 서셉터의 하강시에, 상기 피처리 기판 승강 장치에 상기 피처리 기판을 상기 서셉터로부터 받고, 상기 서셉터의 상승시에, 상기 서셉터에 의해 상기 피처리 기판이 재치된 상태로 상기 피처리 기판에 처리가 행해지는 것을 특징으로 하는 기판 처리 방법.
- 제 10 항에 있어서, 상기 서셉터는 중앙 부재와 주변 부재를 구비하고 있으며, 상기 피처리 기판 승강 장치가 상기 서셉터의 중앙 부재를 승강시키도록 구성되어 있고,상기 서셉터의 하강시에, 상기 피처리 기판 승강 장치가 상기 중앙 부재를상승시켜 이 중앙 부재에 상기 피처리 기판을 재치하고, 이어서 상기 중앙 부재의 상승을 해제하여 상기 피처리 기판을 상기 주변 부재를 포함하는 상기 서셉터에 전달하고, 상기 서셉터의 상승시에, 상기 서셉터에 의해 상기 피처리 기판이 재치된 상태로 상기 피처리 기판에 처리가 행해지는 것을 특징으로 하는 기판 처리 방법.
- 제 11 항에 있어서, 상기 가열 유닛의 히터는 상기 서셉터의 중앙 부재에 대응하는 중앙 히터 부재와, 상기 서셉터의 주변 부재에 대응하는 주변 히터 부재를 구비하고 있으며, 이 중앙 히터 부재와 주변 히터 부재는 출력이 독립적으로 제어되고, 서셉터의 중앙 부재가 승강되고 있는 동안에는 중앙 히터 부재의 출력을 증대시켜 제어하여 이루어지도록 구성되어 있으며,상기 서셉터의 하강시에, 상기 피처리 기판 승강 장치가 상기 중앙 부재를 상승시켜 이 중앙 부재에 상기 피처리 기판을 재치할 때, 상기 중앙 히터 부재의 출력이 증가되고, 상기 서셉터의 상승시에, 상기 주변 부재를 포함하는 상기 서셉터에 의해 상기 피처리 기판이 재치된 상태로 상기 피처리 기판에 처리가 행해질 때는, 상기 중앙 히터 부재의 출력과 상기 주변 히터 부재의 출력이 상기 피처리 기판의 온도 분포가 전체에 걸쳐 균일해지도록 제어되는 것을 특징으로 하는 기판 처리 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000084590A JP4203206B2 (ja) | 2000-03-24 | 2000-03-24 | 基板処理装置 |
JP2000-084590 | 2000-03-24 |
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KR20010090517A true KR20010090517A (ko) | 2001-10-18 |
KR100491680B1 KR100491680B1 (ko) | 2005-05-27 |
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Application Number | Title | Priority Date | Filing Date |
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KR10-2001-0015052A KR100491680B1 (ko) | 2000-03-24 | 2001-03-23 | 기판 처리 장치 및 기판 처리 방법 |
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Country | Link |
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US (2) | US20020017363A1 (ko) |
JP (1) | JP4203206B2 (ko) |
KR (1) | KR100491680B1 (ko) |
TW (1) | TW522474B (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100943427B1 (ko) * | 2008-02-04 | 2010-02-19 | 주식회사 유진테크 | 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법 |
KR101419389B1 (ko) * | 2007-07-25 | 2014-07-21 | 주성엔지니어링(주) | 기판 지지 어셈블리 및 이를 포함하는 기판 처리 장치 |
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2001
- 2001-03-23 TW TW090106943A patent/TW522474B/zh not_active IP Right Cessation
- 2001-03-23 US US09/816,643 patent/US20020017363A1/en not_active Abandoned
- 2001-03-23 KR KR10-2001-0015052A patent/KR100491680B1/ko active IP Right Grant
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2005
- 2005-10-25 US US11/258,670 patent/US20060075972A1/en not_active Abandoned
Cited By (5)
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KR101419389B1 (ko) * | 2007-07-25 | 2014-07-21 | 주성엔지니어링(주) | 기판 지지 어셈블리 및 이를 포함하는 기판 처리 장치 |
KR100943427B1 (ko) * | 2008-02-04 | 2010-02-19 | 주식회사 유진테크 | 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법 |
US10622228B2 (en) | 2008-02-04 | 2020-04-14 | Eugene Technology Co., Ltd. | Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit |
US10192760B2 (en) | 2010-07-29 | 2019-01-29 | Eugene Technology Co., Ltd. | Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit |
CN111705302A (zh) * | 2020-08-18 | 2020-09-25 | 上海陛通半导体能源科技股份有限公司 | 可实现晶圆平稳升降的气相沉积设备 |
Also Published As
Publication number | Publication date |
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TW522474B (en) | 2003-03-01 |
JP4203206B2 (ja) | 2008-12-24 |
US20060075972A1 (en) | 2006-04-13 |
US20020017363A1 (en) | 2002-02-14 |
JP2001274094A (ja) | 2001-10-05 |
KR100491680B1 (ko) | 2005-05-27 |
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