TW513803B - Method for fabricating cladding layer in top conductor - Google Patents
Method for fabricating cladding layer in top conductor Download PDFInfo
- Publication number
- TW513803B TW513803B TW090125807A TW90125807A TW513803B TW 513803 B TW513803 B TW 513803B TW 090125807 A TW090125807 A TW 090125807A TW 90125807 A TW90125807 A TW 90125807A TW 513803 B TW513803 B TW 513803B
- Authority
- TW
- Taiwan
- Prior art keywords
- trench
- ferromagnetic
- conductor
- coating
- layer
- Prior art date
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005253 cladding Methods 0.000 title abstract 3
- 230000005291 magnetic effect Effects 0.000 claims abstract description 86
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000011247 coating layer Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 68
- 230000015654 memory Effects 0.000 claims description 48
- 239000011248 coating agent Substances 0.000 claims description 32
- 238000000576 coating method Methods 0.000 claims description 32
- 230000005294 ferromagnetic effect Effects 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 235000000903 Ranunculus bulbosus Nutrition 0.000 claims 1
- 240000005608 Ranunculus bulbosus Species 0.000 claims 1
- 235000012054 meals Nutrition 0.000 claims 1
- 230000005415 magnetization Effects 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- 230000005347 demagnetization Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/802,650 US6475812B2 (en) | 2001-03-09 | 2001-03-09 | Method for fabricating cladding layer in top conductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW513803B true TW513803B (en) | 2002-12-11 |
Family
ID=25184320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090125807A TW513803B (en) | 2001-03-09 | 2001-10-18 | Method for fabricating cladding layer in top conductor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6475812B2 (enExample) |
| EP (1) | EP1239489B1 (enExample) |
| JP (1) | JP2002334973A (enExample) |
| KR (1) | KR100855573B1 (enExample) |
| CN (1) | CN1374691A (enExample) |
| DE (1) | DE60201036T2 (enExample) |
| HK (1) | HK1049067A1 (enExample) |
| TW (1) | TW513803B (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10043947A1 (de) * | 2000-09-06 | 2002-04-04 | Infineon Technologies Ag | Integrierte Schaltungsanordnung |
| US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
| US6413788B1 (en) * | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
| US6545906B1 (en) | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
| US6720597B2 (en) * | 2001-11-13 | 2004-04-13 | Motorola, Inc. | Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers |
| US6661688B2 (en) * | 2001-12-05 | 2003-12-09 | Hewlett-Packard Development Company, L.P. | Method and article for concentrating fields at sense layers |
| US6525957B1 (en) * | 2001-12-21 | 2003-02-25 | Motorola, Inc. | Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof |
| US6780653B2 (en) * | 2002-06-06 | 2004-08-24 | Micron Technology, Inc. | Methods of forming magnetoresistive memory device assemblies |
| US7095646B2 (en) | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
| JP2006134363A (ja) | 2002-07-29 | 2006-05-25 | Nec Corp | 磁気ランダムアクセスメモリ |
| US6770491B2 (en) * | 2002-08-07 | 2004-08-03 | Micron Technology, Inc. | Magnetoresistive memory and method of manufacturing the same |
| US6914805B2 (en) * | 2002-08-21 | 2005-07-05 | Micron Technology, Inc. | Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device |
| KR100515053B1 (ko) * | 2002-10-02 | 2005-09-14 | 삼성전자주식회사 | 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치 |
| JP3906145B2 (ja) * | 2002-11-22 | 2007-04-18 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| US7184301B2 (en) | 2002-11-27 | 2007-02-27 | Nec Corporation | Magnetic memory cell and magnetic random access memory using the same |
| US6885074B2 (en) * | 2002-11-27 | 2005-04-26 | Freescale Semiconductor, Inc. | Cladded conductor for use in a magnetoelectronics device and method for fabricating the same |
| US6909630B2 (en) | 2002-12-09 | 2005-06-21 | Applied Spintronics Technology, Inc. | MRAM memories utilizing magnetic write lines |
| US6909633B2 (en) | 2002-12-09 | 2005-06-21 | Applied Spintronics Technology, Inc. | MRAM architecture with a flux closed data storage layer |
| US6870759B2 (en) * | 2002-12-09 | 2005-03-22 | Applied Spintronics Technology, Inc. | MRAM array with segmented magnetic write lines |
| US6943038B2 (en) * | 2002-12-19 | 2005-09-13 | Freescale Semiconductor, Inc. | Method for fabricating a flux concentrating system for use in a magnetoelectronics device |
| US6864551B2 (en) * | 2003-02-05 | 2005-03-08 | Applied Spintronics Technology, Inc. | High density and high programming efficiency MRAM design |
| US6812538B2 (en) | 2003-02-05 | 2004-11-02 | Applied Spintronics Technology, Inc. | MRAM cells having magnetic write lines with a stable magnetic state at the end regions |
| US6940749B2 (en) | 2003-02-24 | 2005-09-06 | Applied Spintronics Technology, Inc. | MRAM array with segmented word and bit lines |
| US6963500B2 (en) * | 2003-03-14 | 2005-11-08 | Applied Spintronics Technology, Inc. | Magnetic tunneling junction cell array with shared reference layer for MRAM applications |
| US7067866B2 (en) * | 2003-03-31 | 2006-06-27 | Applied Spintronics Technology, Inc. | MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture |
| US6933550B2 (en) * | 2003-03-31 | 2005-08-23 | Applied Spintronics Technology, Inc. | Method and system for providing a magnetic memory having a wrapped write line |
| US6785160B1 (en) * | 2003-04-29 | 2004-08-31 | Hewlett-Packard Development Company, L.P. | Method of providing stability of a magnetic memory cell |
| US6956763B2 (en) | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
| US6967366B2 (en) | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
| US7078239B2 (en) | 2003-09-05 | 2006-07-18 | Micron Technology, Inc. | Integrated circuit structure formed by damascene process |
| US6819586B1 (en) * | 2003-10-24 | 2004-11-16 | Hewlett-Packard Development Company, L.P. | Thermally-assisted magnetic memory structures |
| US20050141148A1 (en) | 2003-12-02 | 2005-06-30 | Kabushiki Kaisha Toshiba | Magnetic memory |
| US20050205952A1 (en) * | 2004-03-19 | 2005-09-22 | Jae-Hyun Park | Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the same |
| US6946698B1 (en) | 2004-04-02 | 2005-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device having low-k inter-metal dielectric |
| US20060039183A1 (en) * | 2004-05-21 | 2006-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-sensing level MRAM structures |
| JP5003937B2 (ja) * | 2004-06-10 | 2012-08-22 | 日本電気株式会社 | 磁気メモリ |
| US7221584B2 (en) * | 2004-08-13 | 2007-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM cell having shared configuration |
| US7129098B2 (en) | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
| US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
| US7407885B2 (en) * | 2005-05-11 | 2008-08-05 | Micron Technology, Inc. | Methods of forming electrically conductive plugs |
| KR100682950B1 (ko) * | 2005-07-28 | 2007-02-15 | 삼성전자주식회사 | 강유전체 기록매체 및 그 제조 방법 |
| US7738287B2 (en) * | 2007-03-27 | 2010-06-15 | Grandis, Inc. | Method and system for providing field biased magnetic memory devices |
| JP2009283843A (ja) * | 2008-05-26 | 2009-12-03 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| US7833806B2 (en) * | 2009-01-30 | 2010-11-16 | Everspin Technologies, Inc. | Structure and method for fabricating cladded conductive lines in magnetic memories |
| KR101983137B1 (ko) * | 2013-03-04 | 2019-05-28 | 삼성전기주식회사 | 파워 인덕터 및 그 제조방법 |
| US10403424B2 (en) | 2017-06-09 | 2019-09-03 | Texas Instruments Incorporated | Method to form magnetic core for integrated magnetic devices |
| CN112133820A (zh) * | 2019-06-25 | 2020-12-25 | 中电海康集团有限公司 | Mram底电极的制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2728025B2 (ja) | 1995-04-13 | 1998-03-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| ATE223108T1 (de) * | 1995-04-24 | 2002-09-15 | Infineon Technologies Ag | Halbleiter-speichervorrichtung unter verwendung eines ferroelektrischen dielektrikums und verfahren zur herstellung |
| JPH09191084A (ja) * | 1996-01-10 | 1997-07-22 | Nec Corp | 半導体装置及びその製造方法 |
| US5732016A (en) * | 1996-07-02 | 1998-03-24 | Motorola | Memory cell structure in a magnetic random access memory and a method for fabricating thereof |
| US6030877A (en) * | 1997-10-06 | 2000-02-29 | Industrial Technology Research Institute | Electroless gold plating method for forming inductor structures |
| US5956267A (en) | 1997-12-18 | 1999-09-21 | Honeywell Inc | Self-aligned wordline keeper and method of manufacture therefor |
| US6278165B1 (en) * | 1998-06-29 | 2001-08-21 | Kabushiki Kaisha Toshiba | MIS transistor having a large driving current and method for producing the same |
| US5940319A (en) * | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
| JP2000090658A (ja) * | 1998-09-09 | 2000-03-31 | Sanyo Electric Co Ltd | 磁気メモリ素子 |
| US6872993B1 (en) * | 1999-05-25 | 2005-03-29 | Micron Technology, Inc. | Thin film memory device having local and external magnetic shielding |
| DE10106860A1 (de) * | 2000-02-17 | 2001-08-30 | Sharp Kk | MTJ-Element und Magnetspeicher unter Verwendung eines solchen |
| JP2001230468A (ja) * | 2000-02-17 | 2001-08-24 | Sharp Corp | 磁気トンネル接合素子及びそれを用いた磁気メモリ |
| US6211090B1 (en) * | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
| TW459374B (en) * | 2000-08-30 | 2001-10-11 | Mosel Vitelic Inc | Method for forming magnetic layer of magnetic random access memory |
| US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
| US6413788B1 (en) * | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
-
2001
- 2001-03-09 US US09/802,650 patent/US6475812B2/en not_active Expired - Lifetime
- 2001-10-18 TW TW090125807A patent/TW513803B/zh not_active IP Right Cessation
- 2001-12-10 CN CN01143132A patent/CN1374691A/zh active Pending
-
2002
- 2002-03-06 JP JP2002060538A patent/JP2002334973A/ja active Pending
- 2002-03-08 KR KR1020020012376A patent/KR100855573B1/ko not_active Expired - Fee Related
- 2002-03-08 EP EP02251667A patent/EP1239489B1/en not_active Expired - Lifetime
- 2002-03-08 DE DE60201036T patent/DE60201036T2/de not_active Expired - Fee Related
-
2003
- 2003-02-18 HK HK03101239.6A patent/HK1049067A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE60201036T2 (de) | 2005-08-11 |
| JP2002334973A (ja) | 2002-11-22 |
| CN1374691A (zh) | 2002-10-16 |
| DE60201036D1 (de) | 2004-09-30 |
| US6475812B2 (en) | 2002-11-05 |
| KR20030009078A (ko) | 2003-01-29 |
| KR100855573B1 (ko) | 2008-09-03 |
| EP1239489A1 (en) | 2002-09-11 |
| HK1049067A1 (zh) | 2003-04-25 |
| EP1239489B1 (en) | 2004-08-25 |
| US20020127743A1 (en) | 2002-09-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |