JP2002334973A - 上部導体にクラッド層を形成するための方法 - Google Patents

上部導体にクラッド層を形成するための方法

Info

Publication number
JP2002334973A
JP2002334973A JP2002060538A JP2002060538A JP2002334973A JP 2002334973 A JP2002334973 A JP 2002334973A JP 2002060538 A JP2002060538 A JP 2002060538A JP 2002060538 A JP2002060538 A JP 2002060538A JP 2002334973 A JP2002334973 A JP 2002334973A
Authority
JP
Japan
Prior art keywords
trench
cladding
ferromagnetic
conductor
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002060538A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002334973A5 (enExample
Inventor
Janice H Nickel
ジャニス・エイチ・ニッケル
Thomas C Anthony
トーマス・シー・アンソニー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2002334973A publication Critical patent/JP2002334973A/ja
Publication of JP2002334973A5 publication Critical patent/JP2002334973A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2002060538A 2001-03-09 2002-03-06 上部導体にクラッド層を形成するための方法 Pending JP2002334973A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/802,650 US6475812B2 (en) 2001-03-09 2001-03-09 Method for fabricating cladding layer in top conductor
US09/802650 2001-03-09

Publications (2)

Publication Number Publication Date
JP2002334973A true JP2002334973A (ja) 2002-11-22
JP2002334973A5 JP2002334973A5 (enExample) 2005-04-07

Family

ID=25184320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002060538A Pending JP2002334973A (ja) 2001-03-09 2002-03-06 上部導体にクラッド層を形成するための方法

Country Status (8)

Country Link
US (1) US6475812B2 (enExample)
EP (1) EP1239489B1 (enExample)
JP (1) JP2002334973A (enExample)
KR (1) KR100855573B1 (enExample)
CN (1) CN1374691A (enExample)
DE (1) DE60201036T2 (enExample)
HK (1) HK1049067A1 (enExample)
TW (1) TW513803B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004012199A1 (ja) * 2002-07-29 2004-02-05 Nec Corporation 磁気ランダムアクセスメモリ
JP2005129945A (ja) * 2003-10-24 2005-05-19 Hewlett-Packard Development Co Lp 熱支援型磁気メモリ構造
WO2005122259A1 (ja) * 2004-06-10 2005-12-22 Nec Corporation 磁気メモリ
JP2006511956A (ja) * 2002-12-19 2006-04-06 フリースケール セミコンダクター インコーポレイテッド 磁気電子デバイスに使用される磁束集中系路を作製するための方法
US7184301B2 (en) 2002-11-27 2007-02-27 Nec Corporation Magnetic memory cell and magnetic random access memory using the same
JP2009283843A (ja) * 2008-05-26 2009-12-03 Renesas Technology Corp 半導体装置及びその製造方法
US7848136B2 (en) 2003-12-02 2010-12-07 Kabushiki Kaisha Toshiba Magnetic memory

Families Citing this family (40)

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DE10043947A1 (de) * 2000-09-06 2002-04-04 Infineon Technologies Ag Integrierte Schaltungsanordnung
US6555858B1 (en) * 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
US6413788B1 (en) * 2001-02-28 2002-07-02 Micron Technology, Inc. Keepers for MRAM electrodes
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6720597B2 (en) * 2001-11-13 2004-04-13 Motorola, Inc. Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers
US6661688B2 (en) * 2001-12-05 2003-12-09 Hewlett-Packard Development Company, L.P. Method and article for concentrating fields at sense layers
US6525957B1 (en) * 2001-12-21 2003-02-25 Motorola, Inc. Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
US6780653B2 (en) 2002-06-06 2004-08-24 Micron Technology, Inc. Methods of forming magnetoresistive memory device assemblies
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6770491B2 (en) * 2002-08-07 2004-08-03 Micron Technology, Inc. Magnetoresistive memory and method of manufacturing the same
US6914805B2 (en) * 2002-08-21 2005-07-05 Micron Technology, Inc. Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device
KR100515053B1 (ko) * 2002-10-02 2005-09-14 삼성전자주식회사 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
US6885074B2 (en) * 2002-11-27 2005-04-26 Freescale Semiconductor, Inc. Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
US6870759B2 (en) * 2002-12-09 2005-03-22 Applied Spintronics Technology, Inc. MRAM array with segmented magnetic write lines
US6909630B2 (en) 2002-12-09 2005-06-21 Applied Spintronics Technology, Inc. MRAM memories utilizing magnetic write lines
US6909633B2 (en) 2002-12-09 2005-06-21 Applied Spintronics Technology, Inc. MRAM architecture with a flux closed data storage layer
US6864551B2 (en) * 2003-02-05 2005-03-08 Applied Spintronics Technology, Inc. High density and high programming efficiency MRAM design
US6812538B2 (en) 2003-02-05 2004-11-02 Applied Spintronics Technology, Inc. MRAM cells having magnetic write lines with a stable magnetic state at the end regions
US6940749B2 (en) 2003-02-24 2005-09-06 Applied Spintronics Technology, Inc. MRAM array with segmented word and bit lines
US6963500B2 (en) * 2003-03-14 2005-11-08 Applied Spintronics Technology, Inc. Magnetic tunneling junction cell array with shared reference layer for MRAM applications
US6933550B2 (en) * 2003-03-31 2005-08-23 Applied Spintronics Technology, Inc. Method and system for providing a magnetic memory having a wrapped write line
US7067866B2 (en) * 2003-03-31 2006-06-27 Applied Spintronics Technology, Inc. MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture
US6785160B1 (en) * 2003-04-29 2004-08-31 Hewlett-Packard Development Company, L.P. Method of providing stability of a magnetic memory cell
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US7078239B2 (en) 2003-09-05 2006-07-18 Micron Technology, Inc. Integrated circuit structure formed by damascene process
US20050205952A1 (en) * 2004-03-19 2005-09-22 Jae-Hyun Park Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the same
US6946698B1 (en) 2004-04-02 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having low-k inter-metal dielectric
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US7407885B2 (en) * 2005-05-11 2008-08-05 Micron Technology, Inc. Methods of forming electrically conductive plugs
KR100682950B1 (ko) * 2005-07-28 2007-02-15 삼성전자주식회사 강유전체 기록매체 및 그 제조 방법
US7738287B2 (en) * 2007-03-27 2010-06-15 Grandis, Inc. Method and system for providing field biased magnetic memory devices
US7833806B2 (en) * 2009-01-30 2010-11-16 Everspin Technologies, Inc. Structure and method for fabricating cladded conductive lines in magnetic memories
KR101983137B1 (ko) * 2013-03-04 2019-05-28 삼성전기주식회사 파워 인덕터 및 그 제조방법
US10403424B2 (en) 2017-06-09 2019-09-03 Texas Instruments Incorporated Method to form magnetic core for integrated magnetic devices
CN112133820A (zh) * 2019-06-25 2020-12-25 中电海康集团有限公司 Mram底电极的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728025B2 (ja) 1995-04-13 1998-03-18 日本電気株式会社 半導体装置の製造方法
ATE223108T1 (de) * 1995-04-24 2002-09-15 Infineon Technologies Ag Halbleiter-speichervorrichtung unter verwendung eines ferroelektrischen dielektrikums und verfahren zur herstellung
JPH09191084A (ja) * 1996-01-10 1997-07-22 Nec Corp 半導体装置及びその製造方法
US5732016A (en) * 1996-07-02 1998-03-24 Motorola Memory cell structure in a magnetic random access memory and a method for fabricating thereof
US6030877A (en) * 1997-10-06 2000-02-29 Industrial Technology Research Institute Electroless gold plating method for forming inductor structures
US5956267A (en) 1997-12-18 1999-09-21 Honeywell Inc Self-aligned wordline keeper and method of manufacture therefor
US6278165B1 (en) * 1998-06-29 2001-08-21 Kabushiki Kaisha Toshiba MIS transistor having a large driving current and method for producing the same
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP2000090658A (ja) * 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 磁気メモリ素子
US6872993B1 (en) * 1999-05-25 2005-03-29 Micron Technology, Inc. Thin film memory device having local and external magnetic shielding
JP2001230468A (ja) * 2000-02-17 2001-08-24 Sharp Corp 磁気トンネル接合素子及びそれを用いた磁気メモリ
DE10106860A1 (de) * 2000-02-17 2001-08-30 Sharp Kk MTJ-Element und Magnetspeicher unter Verwendung eines solchen
US6211090B1 (en) * 2000-03-21 2001-04-03 Motorola, Inc. Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
TW459374B (en) * 2000-08-30 2001-10-11 Mosel Vitelic Inc Method for forming magnetic layer of magnetic random access memory
US6555858B1 (en) * 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
US6413788B1 (en) * 2001-02-28 2002-07-02 Micron Technology, Inc. Keepers for MRAM electrodes

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004012199A1 (ja) * 2002-07-29 2004-02-05 Nec Corporation 磁気ランダムアクセスメモリ
US7099184B2 (en) 2002-07-29 2006-08-29 Nec Corporation Magnetic random access memory
US7184301B2 (en) 2002-11-27 2007-02-27 Nec Corporation Magnetic memory cell and magnetic random access memory using the same
JP2006511956A (ja) * 2002-12-19 2006-04-06 フリースケール セミコンダクター インコーポレイテッド 磁気電子デバイスに使用される磁束集中系路を作製するための方法
JP4759268B2 (ja) * 2002-12-19 2011-08-31 エバースピン テクノロジーズ インコーポレイテッド 磁気電子デバイスに使用される磁束集中系路を作製するための方法
JP2005129945A (ja) * 2003-10-24 2005-05-19 Hewlett-Packard Development Co Lp 熱支援型磁気メモリ構造
US7848136B2 (en) 2003-12-02 2010-12-07 Kabushiki Kaisha Toshiba Magnetic memory
WO2005122259A1 (ja) * 2004-06-10 2005-12-22 Nec Corporation 磁気メモリ
JP2009283843A (ja) * 2008-05-26 2009-12-03 Renesas Technology Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN1374691A (zh) 2002-10-16
DE60201036D1 (de) 2004-09-30
HK1049067A1 (zh) 2003-04-25
KR20030009078A (ko) 2003-01-29
DE60201036T2 (de) 2005-08-11
EP1239489B1 (en) 2004-08-25
KR100855573B1 (ko) 2008-09-03
US6475812B2 (en) 2002-11-05
EP1239489A1 (en) 2002-09-11
TW513803B (en) 2002-12-11
US20020127743A1 (en) 2002-09-12

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