TW477824B - Thin film fabrication method and thin film fabrication apparatus - Google Patents

Thin film fabrication method and thin film fabrication apparatus Download PDF

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Publication number
TW477824B
TW477824B TW089102929A TW89102929A TW477824B TW 477824 B TW477824 B TW 477824B TW 089102929 A TW089102929 A TW 089102929A TW 89102929 A TW89102929 A TW 89102929A TW 477824 B TW477824 B TW 477824B
Authority
TW
Taiwan
Prior art keywords
substrate
pulse
pulse wave
voltage
aforementioned
Prior art date
Application number
TW089102929A
Other languages
English (en)
Chinese (zh)
Inventor
Shigeru Mizuno
Makoto Satou
Manabu Tagami
Hideki Satou
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Application granted granted Critical
Publication of TW477824B publication Critical patent/TW477824B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW089102929A 1999-03-12 2000-02-21 Thin film fabrication method and thin film fabrication apparatus TW477824B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06606799A JP4351755B2 (ja) 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置

Publications (1)

Publication Number Publication Date
TW477824B true TW477824B (en) 2002-03-01

Family

ID=13305146

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089102929A TW477824B (en) 1999-03-12 2000-02-21 Thin film fabrication method and thin film fabrication apparatus

Country Status (4)

Country Link
US (2) US6348238B1 (cg-RX-API-DMAC10.html)
JP (1) JP4351755B2 (cg-RX-API-DMAC10.html)
KR (1) KR100372385B1 (cg-RX-API-DMAC10.html)
TW (1) TW477824B (cg-RX-API-DMAC10.html)

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Also Published As

Publication number Publication date
JP4351755B2 (ja) 2009-10-28
US6348238B1 (en) 2002-02-19
US20010009220A1 (en) 2001-07-26
KR100372385B1 (ko) 2003-02-19
US6872289B2 (en) 2005-03-29
JP2000256845A (ja) 2000-09-19
KR20000062570A (ko) 2000-10-25

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