TW468226B - Improved methods and apparatus for etching a conductive layer to improve yield - Google Patents
Improved methods and apparatus for etching a conductive layer to improve yield Download PDFInfo
- Publication number
- TW468226B TW468226B TW087104088A TW87104088A TW468226B TW 468226 B TW468226 B TW 468226B TW 087104088 A TW087104088 A TW 087104088A TW 87104088 A TW87104088 A TW 87104088A TW 468226 B TW468226 B TW 468226B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive
- etching
- layer
- topography
- scope
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 150
- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000012545 processing Methods 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 215
- 238000012876 topography Methods 0.000 claims description 74
- 230000004888 barrier function Effects 0.000 claims description 43
- 239000011229 interlayer Substances 0.000 claims description 22
- 230000002079 cooperative effect Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052770 Uranium Inorganic materials 0.000 claims description 9
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 230000008901 benefit Effects 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 28
- 239000007789 gas Substances 0.000 description 25
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 24
- 239000012790 adhesive layer Substances 0.000 description 22
- 238000001816 cooling Methods 0.000 description 14
- 239000001307 helium Substances 0.000 description 14
- 229910052734 helium Inorganic materials 0.000 description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 229920000642 polymer Polymers 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000011010 flushing procedure Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 235000015170 shellfish Nutrition 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000015271 coagulation Effects 0.000 description 2
- 238000005345 coagulation Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 101100260048 Arabidopsis thaliana TCP9 gene Proteins 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 150000001224 Uranium Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002716 delivery method Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- BCQZXOMGPXTTIC-UHFFFAOYSA-N halothane Chemical compound FC(F)(F)C(Cl)Br BCQZXOMGPXTTIC-UHFFFAOYSA-N 0.000 description 1
- 229960003132 halothane Drugs 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/820,533 US5849641A (en) | 1997-03-19 | 1997-03-19 | Methods and apparatus for etching a conductive layer to improve yield |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW468226B true TW468226B (en) | 2001-12-11 |
Family
ID=25231067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087104088A TW468226B (en) | 1997-03-19 | 1998-03-19 | Improved methods and apparatus for etching a conductive layer to improve yield |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5849641A (enExample) |
| EP (1) | EP1010203B1 (enExample) |
| JP (1) | JP4451934B2 (enExample) |
| KR (1) | KR100493486B1 (enExample) |
| AT (1) | ATE252275T1 (enExample) |
| DE (1) | DE69819023T2 (enExample) |
| TW (1) | TW468226B (enExample) |
| WO (1) | WO1998042020A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159861A (en) * | 1997-08-28 | 2000-12-12 | Nec Corporation | Method of manufacturing semiconductor device |
| KR100257080B1 (ko) * | 1997-09-26 | 2000-05-15 | 김영환 | 반도체소자의제조방법 |
| US6077762A (en) * | 1997-12-22 | 2000-06-20 | Vlsi Technology, Inc. | Method and apparatus for rapidly discharging plasma etched interconnect structures |
| JP3819576B2 (ja) * | 1997-12-25 | 2006-09-13 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
| US5939335A (en) | 1998-01-06 | 1999-08-17 | International Business Machines Corporation | Method for reducing stress in the metallization of an integrated circuit |
| US6106663A (en) * | 1998-06-19 | 2000-08-22 | Lam Research Corporation | Semiconductor process chamber electrode |
| US6248252B1 (en) * | 1999-02-24 | 2001-06-19 | Advanced Micro Devices, Inc. | Method of fabricating sub-micron metal lines |
| TW573369B (en) * | 1999-03-31 | 2004-01-21 | Lam Res Corp | Improved techniques for etching an aluminum neodymium-containing layer |
| US6383931B1 (en) * | 2000-02-11 | 2002-05-07 | Lam Research Corporation | Convertible hot edge ring to improve low-K dielectric etch |
| US6387820B1 (en) * | 2000-09-19 | 2002-05-14 | Advanced Micro Devices, Inc. | BC13/AR chemistry for metal overetching on a high density plasma etcher |
| DE10149736C1 (de) * | 2001-10-09 | 2003-04-17 | Infineon Technologies Ag | Verfahren zum Ätzen eines Metallschichtsystems |
| US7244671B2 (en) * | 2003-07-25 | 2007-07-17 | Unitive International Limited | Methods of forming conductive structures including titanium-tungsten base layers and related structures |
| KR100831572B1 (ko) * | 2005-12-29 | 2008-05-21 | 동부일렉트로닉스 주식회사 | 반도체 소자의 배선 형성방법 |
| JP2007214171A (ja) * | 2006-02-07 | 2007-08-23 | Hitachi High-Technologies Corp | エッチング処理方法 |
| US20100003828A1 (en) * | 2007-11-28 | 2010-01-07 | Guowen Ding | Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas |
| US8409937B2 (en) * | 2011-01-07 | 2013-04-02 | Eastman Kodak Company | Producing transistor including multi-layer reentrant profile |
| CN106158724B (zh) * | 2015-03-24 | 2019-03-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3994793A (en) * | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
| FR2312114A1 (fr) * | 1975-05-22 | 1976-12-17 | Ibm | Attaque de materiaux par ions reactifs |
| EP0023429B1 (en) * | 1979-07-31 | 1985-12-18 | Fujitsu Limited | Dry etching of metal film |
| US4373990A (en) * | 1981-01-08 | 1983-02-15 | Bell Telephone Laboratories, Incorporated | Dry etching aluminum |
| JPS57170534A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Dry etching method for aluminum and aluminum alloy |
| US4370196A (en) * | 1982-03-25 | 1983-01-25 | Rca Corporation | Anisotropic etching of aluminum |
| JPS63238288A (ja) * | 1987-03-27 | 1988-10-04 | Fujitsu Ltd | ドライエツチング方法 |
| US4838992A (en) * | 1987-05-27 | 1989-06-13 | Northern Telecom Limited | Method of etching aluminum alloys in semi-conductor wafers |
| JPS6432633A (en) * | 1987-07-29 | 1989-02-02 | Hitachi Ltd | Taper etching method |
| NL8902744A (nl) * | 1989-11-07 | 1991-06-03 | Koninkl Philips Electronics Nv | Werkwijze voor het aanbrengen van sporen uit aluminium of een aluminiumlegering op een substraat. |
| DE3940083A1 (de) * | 1989-12-04 | 1991-06-13 | Siemens Ag | Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnen in integrierten halbleiterschaltungen |
| JP2673380B2 (ja) * | 1990-02-20 | 1997-11-05 | 三菱電機株式会社 | プラズマエッチングの方法 |
| JP3170791B2 (ja) * | 1990-09-11 | 2001-05-28 | ソニー株式会社 | Ａｌ系材料膜のエッチング方法 |
| US5211804A (en) * | 1990-10-16 | 1993-05-18 | Oki Electric Industry, Co., Ltd. | Method for dry etching |
| US5185058A (en) * | 1991-01-29 | 1993-02-09 | Micron Technology, Inc. | Process for etching semiconductor devices |
| DE4107006A1 (de) * | 1991-03-05 | 1992-09-10 | Siemens Ag | Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen |
| US5126008A (en) * | 1991-05-03 | 1992-06-30 | Applied Materials, Inc. | Corrosion-free aluminum etching process for fabricating an integrated circuit structure |
| EP0535540A3 (en) * | 1991-10-02 | 1994-10-19 | Siemens Ag | Etching process for aluminium-containing coatings |
| DE4136178A1 (de) * | 1991-11-02 | 1993-05-06 | Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen, De | Schaltung zur kontinuierlichen zoom-einstellung der bildbreite in einem fernsehempfaenger |
| JPH06108272A (ja) * | 1992-09-30 | 1994-04-19 | Sumitomo Metal Ind Ltd | プラズマエッチング方法 |
| JP3449741B2 (ja) * | 1992-11-26 | 2003-09-22 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US5387556A (en) * | 1993-02-24 | 1995-02-07 | Applied Materials, Inc. | Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2 |
| JP3317582B2 (ja) * | 1994-06-01 | 2002-08-26 | 菱電セミコンダクタシステムエンジニアリング株式会社 | 微細パターンの形成方法 |
| US5783101A (en) * | 1994-09-16 | 1998-07-21 | Applied Materials, Inc. | High etch rate residue free metal etch process with low frequency high power inductive coupled plasma |
-
1997
- 1997-03-19 US US08/820,533 patent/US5849641A/en not_active Expired - Lifetime
-
1998
- 1998-03-17 AT AT98911722T patent/ATE252275T1/de not_active IP Right Cessation
- 1998-03-17 EP EP98911722A patent/EP1010203B1/en not_active Expired - Lifetime
- 1998-03-17 DE DE69819023T patent/DE69819023T2/de not_active Expired - Fee Related
- 1998-03-17 KR KR10-1999-7008438A patent/KR100493486B1/ko not_active Expired - Fee Related
- 1998-03-17 JP JP54071698A patent/JP4451934B2/ja not_active Expired - Lifetime
- 1998-03-17 WO PCT/US1998/005202 patent/WO1998042020A1/en not_active Ceased
- 1998-03-19 TW TW087104088A patent/TW468226B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE69819023T2 (de) | 2004-04-22 |
| US5849641A (en) | 1998-12-15 |
| JP2001517367A (ja) | 2001-10-02 |
| KR20000076337A (ko) | 2000-12-26 |
| WO1998042020A1 (en) | 1998-09-24 |
| EP1010203A1 (en) | 2000-06-21 |
| DE69819023D1 (de) | 2003-11-20 |
| EP1010203B1 (en) | 2003-10-15 |
| ATE252275T1 (de) | 2003-11-15 |
| JP4451934B2 (ja) | 2010-04-14 |
| KR100493486B1 (ko) | 2005-06-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |