573369 A7 B7 五、發明說明（1 ) 發明背景 本發明關於電子裝置之製造。更詳細地說，本發明有 關於在電子裝置之製造過程用來蝕刻含鋁銨層的改良技術 〇 鋁鈸是一種含有鈸的鋁合金，鈸是一種銀色的金屬元 素，也是稀土金屬中的一者。舉例來說，典型的鋁鈸合金 含有一至二個原子百分比的銨。鋁銨是一種具有極佳物理 性質的材料，這可使其能夠在許多情形中能做某種程度地 防止金屬中突塊的形成（Hillock Formation )和應力移散 (Stress Migration )，例如蝕刻作業、後續的處理步驟是 在較高製程溫度下進行的作業、甚至是在藉由電流之流通 而產生熱來做最終產品之處理的作業中。突塊形成在鋁蝕 刻作業中是一項相當嚴重的問題，特別是當鋁是在製做諸 如平板顯示器（FPD)之薄膜電晶體（TFT)等電子 元件的過程中用來形成閘極或金屬線條時。此種現象會在 鋁加熱時發生，其如前面所提及的，在許多種情形中均存 在，例如在高溫處理步驟中或是裝置之作業使用過程中。 對鋁加熱會使得金屬的晶粒分離開，這會使得鋁質尖狀物 自側壁上突出而造成跨越短路（Crossover Short)情形。 鋁鈸是一種非常堅硬的材料，可以做最小量的蝕刻或是不 會形成螺旋狀形成物。此外，其所具有之低電阻及對於突 塊形成的高抵抗力使得鋁鈸成爲電子裝置之應用上的一種 實用的材料選擇。因此，在製造某些形式的電子裝置時， 例如平板顯示器及類似者，其會使用一層含鋁鈸層來形成 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） -4 - --裝—— (請先閱讀背面之注意事項再填寫本頁) A· 訂· 573369 齊 皆 i 讨 i 費 ;p A7 ___B7___ 五、發明說明（2 ) 諸如閘極線、源極或汲極線或是薄膜電晶體等之類的零件 〇 鋁鉸層的蝕刻作業是製程工程師的一項重大挑戰，因 爲傳統用來蝕刻基本上爲純鋁金屬層的技術在飩刻含鋁鈸 層時一般是無法有效運作的。使得鋁銨成爲一種適合用來 製做諸如平板顯示器之類的電子裝置之材料的特性，也會 使得利用含有高氯含量之氣態化學品且基本上強調強的化 學部份的習用技術在鈾刻此材料上有所困難。銘銳對於化 學攻擊是相當有抵抗力的，這使得強調大部份爲化學蝕刻 的習用技術無法有效作用。舉例來說，鋁的蝕刻作業一般 是以C 1 2或B C 1 3來達成的，其在蝕刻此種相當強硬之 材料上非常無效，而需要藉由物理方式來彌補之，例如增 加離子之撞擊。 圖1顯示出一種範例性的層堆疊結構體，其包含有一 層含鋁鈸層，係以習用的鋁蝕刻技術來加以鈾刻，例如使 用習用的蝕刻化學劑。層堆疊結構體1 〇 〇包含有一層含 鋁鈸層102，設置在一層基體104上，而位在一層抗 蝕光罩1 0 6下方。基體1 〇 4可以是例如一種玻璃基體 ，其包含有S i 0 2、低溫玻璃或高溫玻璃。亦應注意到， 顯示在這些圖式內的裝置均是以一種較簡化的方式來表示 的，以供做爲示範之用而已。在所示的這些層的上方、下 方或其等之間可以有其它的層存在。此外，也不是所有顯 示出來的層均必須要存在，其某些或全部的層也可能被其 它不同的層所加以取代。本文圖中所示並加以討論之裝置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） · 5 - 裝--- (請先閱讀背面之注意事項再填寫本頁) 0 573369 A7 B7_ 五、發明說明（3 ) 中的層，對於熟知此技藝之人士所能輕易認知的，且可使 用許多種適切而已知的沉積製程來形成之，例如化學蒸鍍 法（C V D )、電漿蝕刻化學蒸鍍法（P E C V D )和物 理蒸鍍法（P V D )，例如噴鍍法。 含鋁銨層1 0 2是由習用之含有例如C 1 2和B C 1 3 的飩刻氣體加以蝕刻處理。由於習用技術的化學成份，例 如說氣態化學品，主要是由氯所組成，在蝕刻含鋁銨層 1 0 2上並不是很有效，因此鈾刻基本上是藉由增加離子 對於該材料的撞擊而達成的，但這會造成諸如抗鈾光罩 - ...... 1 0 6劣化等負面影響。抗蝕光罩1 〇 6的劣化會使得抗 蝕劑碎裂，其會沉置於側壁或其它區域上，使得某些本來 是設計成不要被罩遮住以便能加以蝕刻的區域被遮蓋住， 進而使其沿著含鋁銨層1 〇 2形成鋸齒狀側壁1 〇— 8 ,以 —^ —·· 及嚴重的殘餘物問題，如以編號1 1 〇標示之處 ——' .一—..... .一一一 -.... —·573369 A7 B7 V. Description of the Invention (1) Background of the Invention The present invention relates to the manufacture of electronic devices. In more detail, the present invention relates to an improved technology for etching an aluminum-ammonium-containing layer in the manufacturing process of an electronic device. Aluminum ytterbium is an aluminum alloy containing ytterbium, and ytterbium is a silver metal element and also one of the rare earth metals. By. For example, a typical aluminum-rhenium alloy contains one to two atomic percent ammonium. Aluminum ammonium is a material with excellent physical properties, which can make it possible to prevent the formation of bumps (Hillock Formation) and Stress Migration in metals to some extent, such as etching operations. The subsequent processing steps are operations performed at higher process temperatures, and even in operations that produce heat by the flow of electricity to process the final product. Bump formation is a serious problem in aluminum etching operations, especially when aluminum is used to form gates or metals in the manufacture of electronic components such as thin film transistors (TFTs) for flat panel displays (FPDs). When lines. This phenomenon occurs when aluminum is heated, and as mentioned earlier, it exists in many cases, such as during high-temperature processing steps or during operation and use of the device. Heating aluminum will cause the metal's grains to separate, which will cause aluminum spikes to protrude from the side walls and cause a crossover short condition. Aluminum hafnium is a very hard material that can be etched with minimal or no spiral formation. In addition, its low resistance and high resistance to bump formation make aluminum alloy a practical material choice for applications in electronic devices. Therefore, when manufacturing some forms of electronic devices, such as flat-panel displays and the like, they will use an aluminum-containing samarium layer to form the paper. This standard applies to Chinese National Standard (CNS) A4 (210 x 297 mm) -4 ---Install—— (Please read the precautions on the back before filling out this page) A · Order · 573369 Qi Jie i to discuss i fee; p A7 ___B7___ 5. Description of the invention (2) Such as gate line, source or sink Epipolar or thin-film transistors, etc. The etching of aluminum hinges is a major challenge for process engineers, because the traditional technology used to etch basically pure aluminum metal layers is when etching aluminum-containing hafnium layers. Generally does not work effectively. The characteristics that make aluminum ammonium a material suitable for making electronic devices such as flat-panel displays will also allow conventional techniques that use gaseous chemicals with high chlorine content and basically emphasize a strong chemical part to be carved in uranium. Difficulties in this material. Mingrui is quite resistant to chemical attacks, which makes conventional techniques that emphasize chemical etching mostly ineffective. For example, the etching of aluminum is generally achieved by C 1 2 or BC 1 3, which is very ineffective in etching such fairly tough materials, and needs to be compensated by physical means, such as increasing the impact of ions . FIG. 1 shows an exemplary layer stack structure including an aluminum-containing plutonium layer, which is etched using conventional aluminum etching techniques, such as using conventional etching chemistries. The layer stack structure 100 includes an aluminum-containing hafnium layer 102, which is disposed on a layer of the substrate 104, and is located under a layer of an anti-corrosive mask 106. The substrate 104 may be, for example, a glass substrate including S i 0 2, low-temperature glass, or high-temperature glass. It should also be noted that the devices shown in these figures are represented in a more simplified manner for demonstration purposes only. There may be other layers above, below, or between these layers as shown. In addition, not all layers shown must be present, and some or all of them may be replaced by other layers. The device shown and discussed in the figure in this paper The size of this paper applies to Chinese National Standard (CNS) A4 (210 X 297 mm) · 5-Packing --- (Please read the precautions on the back before filling this page) 0 573369 A7 B7_ 5. The layers in the description of the invention (3) can be easily recognized by those skilled in the art, and can be formed using many suitable and known deposition processes, such as chemical vapor deposition (CVD), Plasma etching chemical vapor deposition (PECVD) and physical vapor deposition (PVD), such as thermal spraying. The aluminum ammonium-containing layer 102 is etched by a conventional etching gas containing, for example, C 1 2 and B C 1 3. Because the chemical composition of conventional technology, such as gaseous chemicals, is mainly composed of chlorine, it is not very effective in etching the aluminum-containing ammonium layer 102, so uranium etching is basically by increasing the impact of ions on the material. This is achieved, but this will cause negative effects such as degradation of the uranium-resistant photomask-... 106. Deterioration of the photoresist mask 106 will cause the resist to crack, which will sink on the side wall or other areas, so that some areas that were originally designed not to be covered by the mask so as to be etched are covered, and further It is formed along the aluminum-ammonium-containing layer 10 to form a jagged side wall 10-8, with ^^ ... and serious residue problems, such as the place marked with the number 1110-'. 一 .... ... .One one one-.... -·
針對前面所述，在此所需要的是一種能有效蝕刻諸如 銘銳之類的銘合金的改良技術。這些改技術最好能夠以商 業上所需的蝕刻速率來蝕刻具有含鋁钕層之基體’而同時 能消除抗蝕光罩劣化、形成鋸齒狀側壁和殘餘物之增加等 的問題。 I 發明槪述 在一實施例中，本發明是有關於一種在電漿處理腔室 內以電漿蝕刻設置在基體上方而位在鈾刻光罩下方的含鋁 鈸層之方法。此方法包括有使內含有Η B r和C 1 2的來源 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6- 裝—— (請先閱讀背面之注意事項再填寫本頁) te_In view of the foregoing, what is needed here is an improved technique that can effectively etch an alloy such as Ming Rui. These techniques should preferably be able to etch a substrate with an aluminum-neodymium-containing layer at a commercially required etch rate while eliminating the problems of deterioration of the resist mask, formation of jagged sidewalls, and increased residue. I. INTRODUCTION OF THE INVENTION In one embodiment, the present invention relates to a method for plasma-etching an aluminum-containing plutonium layer disposed above a substrate and under a uranium engraving mask in a plasma processing chamber. This method includes the source containing Η B r and C 1 2 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)-6-pack-(Please read the precautions on the back before (Fill in this page) te_
I 573369 A7 ——__B7__ 五、發明說明（4 ) 氣體（Source Gas )流入該電漿處理腔室內，並自該來源 氣體內撞擊出電漿等步驟。此方法亦包含有以該電漿來至 少部份蝕穿該含鋁銨層之步驟。 在另一實施例中，本發明是有關於一種用以規劃電（ Configuring )漿處理系統，以供至少部份蝕穿設置在基體 上而位在蝕刻光罩下方之含鋁銨層的方法。此方法包括有 提供具有電漿處理腔室的電漿處理系統之步驟，而該電漿 處理腔室則係規劃成可飩刻該含鋁鈸層。該處理腔室的規 劃包含有將該電漿處理腔室規劃成可接收內含有Η B r和 C 1 2的飩刻氣體，並規劃一個與該電漿處理腔室相關的偏 壓電源，以供自該Η B r和C 1 2內形成電漿，來至少部份 - ......- - 一 ’一 蝕穿該含鋁銨層。 齊 i Ιί i 在再另一實施例中，本發明是有關於一種以電漿蝕刻 設置於基體上而位在鈾刻光罩下方之含鋁銨層的方法。此 方法包括含有將該具有含鋁銨層的基體放入一電漿反應器 內之步驟。該電漿反應器係一種感應耦合式電漿反應器， 具有一個線圈，做爲頂端電極，以及一夾頭，做爲底端電 極。此方法另外包括有將_食有Η B I*和C 1 2之鈾刻氣體 注入該電漿反應器，並在該電漿反應器內自該蝕刻氣體內 撞擊出電漿等步驟。此方法亦包括有在該感應耦合式電漿 反應器內以該電漿來蝕刻該含鋁銨層，而該感應耦合式電 漿反應器在鈾刻作業中，則是使用至少5 0 0 W的偏壓 功率 本發明的這些及其它特徵將在下文中以本發明的詳細 -7- --裝—— (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 573369 A7 _ B7 五、發明說明（5 ) 說’並配合所附圖式，來加以說明。 圖式的簡單說明 所附圖式的視圖是以舉例的方式，而不是限制性的方 式來說明本發明，而其中相同的參考編號代表類似或相同 的元件，以有助於瞭解。 圖1顯示出一範例性的層堆疊結構體，其包含有一含 鋁銨層，係以習用的鋁蝕刻技術，亦即使用氯化合物等， 來加以蝕刻。 圖2顯示一範例性感應耦合式電漿處理系統的剖面圖 ，其適合用來蝕刻根據本發明之一實施例的含鋁銨層。 圖3顯示出一範例性的層堆疊結構體，其包含有一含 鋁鈸層，係使用本發明的技術，利用Η B r和C 1 2來加以 鈾刻。 圖4 (a) — (b)顯示出多個層堆疊結構體，其每 一者均包含有一含鋁鈸層，分別利用高和低偏壓功率來加 以蝕刻。 圖5 (a)-（c)顯示出多個層堆疊結構體，其每 一者均包含有一含鋁銨層，係分別使用本發明技術，以γ 同的來源氣體成份變化來加以蝕刻，以控制其輪廓角（ Profile Angle ) 〇 · 主要元件對照表 100 層堆疊結構體 -J— — — — — — — — — — I- · I I (請先閱讀背面之注咅？事項再填寫本頁) _ - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） a 573369 A7 B7 五、發明說明（6) ¾齊邛皆鋈讨i n^wrI-肖費ίνη乍i 1 0 2 含 鋁 鈸 層 1 0 4 基 體 1 0 6 抗 蝕 光 罩 1 〇 8 側 壁 1 1 0 殘 餘 物 2 0 〇 電 漿 處 理 系 統 2 0 2 電 漿 處 理 腔 室 2 0 4 電 極 2 〇 6 射 its 頻 發 電 機 2 0 8 匹 配 網 路 2 1 0 噴 灑 頭 2 1 2 R F 感 應 電 漿區域 2 1 4 基 體 2 1 6 夾 頭 2 1 8 R F 發 電 機 2 2 0 匹 配 網 路 3 0 0 層 堆 疊 結 構 體 3 〇 2 含 鋁 銨 層 3 0 4 基 體 3 〇 6 抗 蝕 光 罩 3 〇 8 側 壁 4 0 2 抗 蝕 光 罩 4 0 4 含 鋁 鈸 層 4 1 〇 層 堆 疊 結 構 體 -裝—— (請先閱讀背面之注意事項再填寫本頁) ¼. 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） -9- 573369 A7 ____ B7 五、發明說明（7) 4 1 2 含 鋁 銨 層 4 1 4 抗 蝕 光 罩 5 0 〇 層 堆 疊 結 構 體 5 0 2 含 鋁 銨 層 5 0 4 抗 蝕 層 5 0 6 基 體 5 0 8 輪 廓 角 5 1 0 層 堆 疊 結 構 體 目豆 5 1 2 含 鋁 銨 層 5 1 4 抗 蝕 光 罩 層 5 1 6 基 體 5 1 8 f 輪 廓 角 5 2 0 層 堆 疊 結 構 體 5 2 2 含 鋁 銨 層 5 2 4 抗 蝕 光 罩 層 5 2 6 基 體 5 2 8 輪 廓 角 裝--- (請先閱讀背面之注意事項再填寫本頁) 較佳實施例的詳細說明 下文中將配合幾個顯示在附圖中的本發明較佳實施例 來說明本發明。在下面的說明中，其將說明許多細節，以 提供對於本發明的充份瞭解。但是對於熟知此技藝之人士 而言，很明顯的，本發明仍可在不使用這些特定細節之一 部或全部的情形下加以實施。在其它的範例中，已知的程 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 齊 ί i ‘:才 573369 A7 ___B7___ 五、發明說明（8 ) 序步驟或結構將不會再詳細說明，以避免不必要地混淆本 發明。 根據本發明的一實施例，其提供一種在電漿處理腔室 內以電漿來蝕刻設置在基體上方而位在蝕刻光罩下方的含 鋁銨層之方法。將內含有Η B r和C 1 2的來源氣體流入該 電漿處理腔室內，並自此來源氣體內撞擊出電漿。接著使 用該電漿來至少部份鈾穿該含鋁銨層。 根據本發明的另一觀點，其提供一種用以規劃電漿處 理系統，以供至少部份蝕穿設置在基體上而位在飩刻光罩 下方之含鋁銨層的方法。其提供一個具有電漿處理腔室的 電漿處理系統。藉著將該電漿處理腔室規劃成可接收內含 有Η B r和C 1 2的鈾刻氣體，並規劃一個與該電漿處理腔 室相關的偏壓電源，以供自該Η B r和C 1 2內形成電漿， 來至少部份蝕穿該含鋁銳層，而將該處理腔室規劃成能蝕 刻該含鋁銨層。 根據本發明的再另一觀點，其提供一種以電漿鈾刻設 置於基體上而位在蝕刻光罩下方之含鋁銨層的方法。將具 有含鋁銨層的基體放入一電漿反應器內。該電漿反應器係 一種感應耦合式電漿反應器，具有一個線圈，做爲頂端電 極，以及一夾頭，做爲底端電極。接著將包含有HB r和 C 1 2之蝕刻氣體注入該電漿反應器，並在該電漿反應器內 自該蝕刻氣體內撞擊出電漿。接著在該感應耦合式電漿反 應器內以該電漿來蝕刻該含鋁銨層，而該感應耦合式電漿 反應器在蝕刻作業中，則是使用至少5 0 0 W的偏壓功 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -11- --裝--- (請先閱讀背面之注意事項再填寫本頁) · 訂· 573369 座 齊 % 时 A7 ___B7__ 五、發明說明（9 ) 率 爲有助於本文之討論，圖2中顯示出一種範例性之感 應耦合式電漿處理系統的簡化示意圖，其代表一種合適之 低壓高密度電漿處理系統，根據本發明之一實施例，其係 利用Η B I· / C 1 2化學品來蝕刻含鋁鈸層。此種感應耦合 式電漿處理系統之一例是稱爲C〇ntinuumTM的T C Ρ ΤΜ品牌 的系統，其可自設在美國加州Fremont地方的Lam Research公司取得，係被採用在本發明之一較佳實施例中 來進行触刻作業。但是，應瞭解到，本發明並不僅限於使 用此種特定型式之電漿反應器。其相信，本發明是可以任 何的高密度低壓電漿反應器內來加以實施，包括那些使用 迴旋加速共振（E C R )系統、螺旋加速器、螺旋共振器 或類似者。 現在參閱圖2，電漿處理系統2 0 0包含有電漿處理 腔室202。在腔室202的上方設有電極204，其在 圖2的範例中是以線圏來實施之，但是其它用來將射頻能 量耦合至電漿處理腔室內之電漿上的機制亦可加以採用。 電極2 0 4是由射頻（RF )發電機2 0 6經由匹配網路 2 0 8加以供應能量的。在圖2的範例中，R F發電機 206提供頻率約爲13·56MHz的RF能量，但是 其它適當的頻率也可加以使用。 在電漿處理腔室2 0 2內，其顯示出具有一個噴灑頭 2 1 0，代表一種氣體配送裝置，用來將氣態蝕刻材料， 例如本發明的來源氣體，加以釋放至位在其與基體2 1 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- - ----------M -裝—— (請先閱讀背面之注意事項再填寫本頁) 聲 ί % 丨才 573369 Α7 -------Β7_ 五、發明說明（10) 之間的RF感應電漿區域2 1 2內。但是，其它種的氣體 SB送裝置，例如氣體配送環，或是設置在腔室壁上的簡單 的埠口等亦可加以使用。基體2 1 4上設有一層含鋁銨層 ’被送入至電漿處理腔室2 0 2內，而置放在一夾頭 2 1 6上，該夾頭可做爲第二個電極，且最好是由一射頻 發電機2 1 8經由一匹配網路2 2 0加以偏壓。如同RF 發電機2 0 6 —樣，RF發電機2 1 8在圖2的範例中可 提供頻率約爲4MH z的RF能量，但是其它適當的頻率 ’包括不同於RF發電機2 0 6所提供之頻率者，也可加 以使用。 諸如氦氣之類的熱交換用氣體是在壓力下（例如在一 實施例中爲約4托）注入至位在夾頭2 1 6和基體2 1 4 之間的區域內，以控制基體與夾頭間的熱傳狀況，進而能 確保可以有平均而可重覆的蝕刻結果。爲有助於飩刻作業 ’來源氣體係經由噴灑頭2 1 0注入的，並由R F發電機 2 0 6和2 1 8所供應的R F能量加以點燃。在含鋁銳層 的蝕刻作業中，腔室2 〇 2內的壓力最好保持爲低壓，例 如在一實施例中爲在約3至約2 0毫托之間。此外，由於 這是一種高密度蝕刻作業，離子通量應該是相當的高，例 如至少約1 0 1 ^離子/立方公分，且最好是至少約1 0 1 離子/立方公分。 如先前所提到的，本發明係使用內含有Η B r和C 1 的來源氣體來蝕穿該含鋁钕層。習用之以氯爲基礎之蝕刻 化學品中的氯大部份會被Η B r所取代。Η B r之所以會 -裝--- (請先閱讀背面之注意事項再填寫本頁) »· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -13- 573369 A7 B7 五、發明說明（n) 被選來取代氯是因爲其能夠供應高離子能量，而同時保持 鋁對抗鈾劑的高蝕刻選擇性（High Etch Selectivity )，這 可使其能有效地將含鋁銨層侵鈾掉，而不會對於抗鈾光罩 造成不當的損壞。以溴爲基礎的化學品亦可在含鋁銨層的 異方性蝕刻作業中得到相當鉛直的輪廓，這相信是因爲在 以溴離子做蝕刻作業時所產生之側壁鈍化效應所造成的。 這可減少習用之氯爲基礎之鈾刻劑化學品中所造成的過度 切割結果，並可得到諸如平板式顯示器之製造等應用上所 需要有的平滑推拔（Tapered )輪廓。除了具有良好的輪廓 形狀控制能力外，本發明的蝕刻化學品在蝕刻均勻度上亦 有良好的表現。在部份蝕刻步驟後所進行之蝕刻深度測試 顯示出，使用本發明之化學品來進行含鋁銨層鈾刻作業可 得到相當平均的結果，例如說蝕刻率在± 1 0 %內。此外， 由於可將抗蝕光罩的損耗減至最少，本發明的化學品亦可 供進行相當精密的蝕刻作業，這可提供重要尺寸的較佳控 制結果。 圖3顯示出一種範例性的層堆疊結構體3 0 0，其包 含有一層含鋁銨層302，設置在基體304上方，並位 在抗蝕光罩3 0 6的下方。此含鋁鈸層3 0 2係以本發明 的Η B r / C 1 2化學品加以蝕刻處理。以Η B r來取代一 部份的C 1 2可以得到具有高離子能量的最佳蝕刻結果，這 可有利地消除蝕刻光罩（亦即抗蝕光罩或是硬質光罩）過 度劣化的問題，而這則進而避免沿著含鋁鈸層3 0 2之蝕 刻表面過度形成鋸齒狀側壁的情形，同時也可減少在此層 -14- I---------I 裝--- (請先閱讀背面之注意事項再填寫本頁) ¼. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 573369 A7 __ B7 五、發明說明（12) 堆疊結構體3 0 0內外露出的表面上造成殘餘物過度的堆 積。以本發明的Η B r / C 1 2化學品來進行飩刻作業可沿 著含鋁銨層3 0 2得到平順的推拔狀側壁3 0 8，並可顯 著地減少殘餘物。此種改良可藉由比較圖3中的改良特性 與圖1中所示由習用化學品所進行之蝕刻作業而得到的相 對應結果而得知。 使用本發明之Η B r / C 1 2蝕刻化學品一項必要特點 爲要使用高偏壓功率（Bias Power )。所用之偏壓功率可 以是在約5 0 0 W至約3 0 0 0 W之間，在此實施例中， 其偏壓功率是設定爲2 5 0 0W。使用高偏壓功率的目的 是有助於控制對於抗蝕劑的蝕刻選擇性。雖然保護抗蝕光 罩是相當重要的，但是某些的抗蝕劑仍然必須要加以侵蝕 掉，以得到所需要的蝕刻輪廓。圖4 ( a )和圖4 ( b ) 分別顯示出使用低偏壓功率和高偏壓功率的飩刻輪廓。含 鋁銨層的蝕刻率則維持不變，然而抗鈾劑的蝕刻率則隨著 偏壓功率的移動而顯著地改變，亦即抗鈾劑的蝕刻率會隨 著偏壓功率的增加而增加。在圖4 ( a )中，低偏壓功率 會減少撞擊，且會使抗蝕光罩4 0 2以較低之速率侵蝕掉 ，而這會阻礙含鋁鈸層在鉛直方向上的蝕刻作用。因此， 在橫側向上的蝕刻作用會在含鋁銨層4 0 4上造成較強的 影響，這使得含鋁鈸層4 0 4具有螺旋狀（Involuated )輪 廓。此種螺旋狀輪廓會在後續之層的共形沉積（Conformal Deposition)過程中形成空洞（Void)。 圖4 (b)顯示出層堆疊結構體4 10，其具有一層 -15- -窗裝--- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 573369 A7 ___Β7__ 五、發明說明（13) 含鋁銨層4 1 2，係在高偏功率情形下加以蝕刻。在此例 中，抗蝕層4 1 4會被以較快的速率侵蝕掉，這使得鉛直 的蝕刻作用在形成蝕刻輪廓上能扮演更有助益的角色，而 造成更平順及更呈推拔狀的含鋁鈸層4 1 2的輪廓。相反 的，在使用習用的化學品上，其偏壓功率是維持在約0 W 至約2 0 0 0 W之間。雖然高偏壓功率確可有助於減低含 鋁銨層相對於抗蝕層的蝕刻選擇性，但是將偏壓功率設定 高於2 0 0 0 W之鄰近處，而同時使用習用的氣態蝕刻化 學品，則會對於抗蝕劑造成嚴重傷害，同時也會在輪廓控 制上和殘餘物之形成上造成問題。 本發明之化學品的特定成份亦可加以調整，以便能得 到對於輪廓角度的控制。這在製造平板式顯示器上特別有 用，其中的輪廓角度在決定像素尺寸及平坦度上扮演相當 重要的角色。爲有助於本文的討論，圖5 (a)-5 (c )中顯示出數個層堆疊結構體，其每一者均包含有一層鋁 銨層，其係以本發明之技術的不同變化來加以蝕刻，包括 使用不同的來源氣體成份以控制輪廓角。請注意，圖5 ( a ) - 5 ( c )中之蝕刻作業所得到的結果僅是範例性的 i I 而已，而實際的結果可能會因特定之反應器，以及特定之 a ^ 蝕刻條件，而有所變化。 ； 圖5 (a)顯示出層堆疊結構體500，其具有一層 \ ψ ·:· 含鋁銨層502，位在抗蝕光罩層504下方，並位在基 \ \ 體506的上方。含鋁銨層502是以具有HBr :C1 ; 之比値爲約2 : 1的氣態化學品來加以鈾刻，其結果可得 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -16- •裝i I (請先閱讀背面之注意事項再填寫本頁) » · 573369 A7 B7 五、發明說明（14) 到約8 0度的輪廓角5 0 8。 圖5 (b)顯示出層堆疊結構體5 10，其具有一層 含鋁銨層512，位在抗蝕光罩層514下方，並位在基 體5 1 6的上方。含鋁鈸層5 1 2是以具有HB r : C 12 之比値爲約1 : 1的氣態化學品來加以蝕刻，其結果可得 到約6 0度的輪廓角5 1 8。 圖5 (c)顯示出層堆疊結構體520，其具有一層 含鋁鈸層522，位在抗蝕光罩層524下方，並位在基 體5 26的上方。含鋁銨層522是以具有HBi· : C 12 之比値爲約1 : 2的氣態化學品來加以蝕刻，其結果可得 到約4 0度的輪廓角5 2 8。 雖然含鋁鈸層的推拔狀輪廓之斜率可因使用者的愛好 而改變，其亦可由最終產品的需求來加以決定。例如說， 可供使用平板式顯示器上的含鋁鈸層可以Η B r / C 1 2氣 態化學品來加以鈾刻。如果此化學品具有較高的Η B r : C 1 2成份比，則被蝕刻的層會具有較陡的角度，這會使得 最終產品具有較小的像素尺寸，因之而具有較高的解析度 。另外，此較陡角度可提供最終產品較大的像素尺寸和較 低的解析度，但是具有較亮的顯示結果。此外，陡峭輪廓 角可提供較佳的重要尺寸控制能力，其在某種程度上會造 成最終產品的較大可靠度。但是，後續層的較大步進量會 在後續層之沉積過程中造成不想要的空洞。 相反的，如果此氣態化學品具有較低的Η B r : C 1 2成份比，則所蝕刻出來的層會具有較大的推拔角， -裝--- (請先閱讀背面之注意事項再填寫本頁) 會 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） -17- 573369 A7 B7 五、發明說明（15) 這可使得後續層的沉積作業中能有較佳的步進量，而提供 較平坦的最終產品，但具有較大的像素和較低的解析度。 在平板式顯示器之製造的例子中，最終的目的是要得到具 有高解析度而不會犧牲亮度和平坦度的最終產品。爲能滿 足於這些看似互相衝突的目標，理想上的結果可以藉著以 主要爲Η B r的氣態化學品來進行含鋁銨層的蝕刻作業， 以便得到幾乎接近9 0度輪廓角之推拔結果，並以一種極 端先進之沉積工具來進行沉積作業，而該工具係能夠克服 空洞問題而製得具有高解析度和足夠亮度的可靠元件者。 自前面所述可以得知，本發明係有利地使用包含有 Η B r和C 1 2的來源氣體，以至少部份地蝕穿含鋁銨層。 以一種非顯而易知而新穎的方法，本發明有計劃地將 Η B r加入至蝕刻劑化學品內，以取代部份的C 1 2和 ------ -----------------------------------〜一—-·..........… B C 1 3 (和習用鈾刻用氣態化學品相比較）。Η B r的加 添並不是可直覺聯想得知的，因爲Η B r並不是傳統上使 用於鋁之鈾刻作業者，事實上，一般人可能會因爲在蝕刻 過程中會有增加非揮發性副產品的沉積結果的可能性，而 這會需要更頻繁或是更深度地淸潔電漿處理腔室之故，而 避免使用Η B r。此外，由於毒性和高成本之故，Η B r 一般並不是蝕刻劑氣態化學品的較佳成份。 雖然基本的化學品是包括Η B r和C 1 2，但是其它的 添加劑只要不要對於此蝕刻劑中提供氫、溴和氯來蝕刻含 鋁鈸層的基本特性造成實質上的改變均可加入。例如說， 可以加入B C 1 3來取代C 1 2，只要HB I·的含量和氯含 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1·----------裝--- (請先閱讀背面之注意事項再填寫本頁) 訂： 573369 齊 I !才 i A7 B7 五、發明說明（16) 量間的平衡能保持在某一給定範圍內而不會對於本發明所 提供的特性，例如離子能量、触刻率、輪廓控制和對抗飩 劑的選擇性等特性造成不利影響即可。在其它的例子中， 其也可以加入一種或多種的惰性氣體，例如氬氣、氖氣或 氮氣。 範例 在下文中以適當的參數，使用本發明的技術在前述的 ContiiuiumTM感應耦合式電漿反應器中來飩穿具有含鋁銨層 之範例性層堆疊結構體。可以輕易瞭解到，且係屬熟知此 技藝之人士所知曉者，如有需要可以將這些參數加以調整 或修改，以用來鈾刻具有不同尺寸的基體或是配合於特定 之電漿腔室的需求。 表1提供合適用於電漿反應器內之參數的約略範圍及 大槪的範例，例如電極功率（以瓦爲單位）、偏壓功率（ 以瓦爲單位）、壓力（以毫托爲單位）和HBr : Cl2的 比値。表2提供可供此較佳實施例使用於上述之 (：0!11丨111111111^電漿反應器內之參數表之範例，其中包含有諸 如腔室壓力（以毫托爲單位）、頂端電極功率（以瓦爲單 位）、偏壓功率（以瓦爲單位）、Η B I*和C 1 2的流率（ 以seem爲單位）、氨背壓（以托爲單位）和電極溫度 (以t爲單位）等變數。 --裝—— (請先閱讀背面之注意事項再填寫本頁) »_ p 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -19- 573369 A7 B7 五、發明說明（17) 變數/範圍 約略之 較佳値 約略之 更佳値 約略之範 例性參數 頂端電極功率（瓦） 1500-4000 2500-3500 3000 偏壓功率（瓦） 500-3500 2000-3000 2500 壓力（毫托） 3-20 5-8 5 HBr:Ch 99:1-1:10 99:1-1:5 2:1 表1 變數 壓力 (毫托） 頂端 電極 功率 (瓦） 偏壓 功率 (瓦） HBr 流量 (seem) Ch 流量 (seem) 氦背壓 (托） 電極 溫度 (°C) 數値 5 3000 2500 300 150 4 60 表2 — — — — — — — — — I — I * I I (請先閱讀背面之注意事項再填寫本頁) %· 經濟部智慧財Ϊ苟員X.消費合阼fi印製 雖然上文中是以數個較佳實施例來說明本發明，但是 其仍有多種的變更、交換及等效物是屬於本發明的範疇。 應注意到，其有多種不同的方式，可用來實施本發明的方 法和裝置。因此其意欲將下文之申請專利範圍視爲包含有 所有的這些屬於本發明之精神及範疇內的變更、交換及等 效物。 η ：I 573369 A7 ——__ B7__ 5. Description of the invention (4) The gas (Source Gas) flows into the plasma processing chamber, and the plasma is impinged from the source gas. This method also includes the step of at least partially etching through the aluminum-ammonium-containing layer with the plasma. In another embodiment, the present invention relates to a method for planning an electrical slurry processing system to at least partially etch through an aluminum-ammonium-containing layer disposed on a substrate and under an etching mask. The method includes the steps of providing a plasma processing system having a plasma processing chamber, and the plasma processing chamber is planned to be engraved with the aluminum-containing hafnium layer. The planning of the processing chamber includes planning the plasma processing chamber to receive the engraved gas containing Η B r and C 1 2, and planning a bias power source related to the plasma processing chamber to Plasma is formed from the Η B r and C 1 2 to at least partially etch through the aluminum-ammonium-containing layer.齐 i Ιί i In yet another embodiment, the present invention relates to a method for plasma-etching an aluminum-ammonium-containing layer disposed on a substrate under a uranium lithographic mask. The method includes the step of placing the substrate having an aluminum-ammonium-containing layer into a plasma reactor. The plasma reactor is an inductively coupled plasma reactor, which has a coil as the top electrode and a chuck as the bottom electrode. This method further includes the steps of injecting uranium-etched gasses of Bi I * and C 12 into the plasma reactor, and impinging plasma from the etching gas in the plasma reactor. The method also includes etching the aluminum-ammonium-containing layer with the plasma in the inductively coupled plasma reactor, and the inductively coupled plasma reactor uses at least 500 W in the uranium engraving operation. These and other features of the present invention will be described in detail in the following with the present invention.-(Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standards (CNS) A4 specification (210 X 297 mm) 573369 A7 _ B7 V. Description of the invention (5) Say 'in conjunction with the attached drawings to explain. Brief Description of the Drawings The drawings are used to illustrate the present invention by way of example, not limitation, and the same reference numerals represent similar or identical elements to facilitate understanding. FIG. 1 shows an exemplary layer stack structure including an aluminum-ammonium-containing layer, which is etched using a conventional aluminum etching technique, that is, using a chlorine compound or the like. FIG. 2 shows a cross-sectional view of an exemplary inductively coupled plasma processing system suitable for etching an aluminum-ammonium-containing layer according to an embodiment of the present invention. Fig. 3 shows an exemplary layer stack structure including an aluminum-containing plutonium layer, which is engraved with uranium Br and C 12 using the technique of the present invention. Figures 4 (a)-(b) show multiple layer stack structures, each of which contains an aluminum-containing hafnium layer, which is etched using high and low bias powers, respectively. Figures 5 (a)-(c) show multiple layer stack structures, each of which contains an aluminum-ammonium-containing layer, respectively, using the technology of the present invention to etch the same source gas composition with γ to change Control its profile angle 〇 · Main component comparison table 100-layer stacked structure -J — — — — — — — — — I- · II (Please read the note on the back? Matters before filling out this page) _-This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) a 573369 A7 B7 V. Description of the invention (6) ¾ 邛 邛 都 邛 议 in ^ wrI- 肖 费 ίνηChai 1 0 2 Aluminum-containing hafnium layer 1 0 4 Substrate 1 0 6 Photoresist mask 1 〇8 Side wall 1 1 0 Residue 2 0 〇 Plasma processing system 2 0 2 Plasma processing chamber 2 0 4 Electrode 2 〇6 Shots frequently Motor 2 0 8 Matching network 2 1 0 Spray head 2 1 2 RF induction plasma area 2 1 4 Base body 2 1 6 Chuck 2 1 8 RF generator 2 2 0 Matching network 3 0 0 Layer stack structure 3 〇 2 Aluminum ammonium layer 3 0 4 Substrate 3 〇6 Anti-resistive mask 3 〇8 Side wall 4 0 2 Anti-resistive mask 4 0 4 Aluminum-containing hafnium layer 4 1 〇 layered stacking structure-mounted-(Please read the precautions on the back before filling this page) ¼. The paper size is in accordance with Chinese National Standard (CNS) A4 (210 χ 297 mm) -9- 573369 A7 ____ B7 V. Description of the invention (7) 4 1 2 Aluminum-containing ammonium layer 4 1 4 Resist mask 5 0 〇 layered stack structure 5 0 2 aluminum-containing ammonium layer 5 0 4 resist layer 5 0 6 base body 5 0 8 contour angle 5 1 0 layer-stacked structure body bean 5 1 2 aluminum-ammonium layer 5 1 4 photoresist Mask layer 5 1 6 Base body 5 1 8 f Contour angle 5 2 0 Layer stack structure 5 2 2 Aluminum-containing ammonium layer 5 2 4 Anti-resistive mask layer 5 2 6 Base body 5 2 8 Contour corner mount --- (please first (Please read the notes on the back and fill in this page) Detailed description of the preferred embodiment The invention will be described below with several preferred embodiments of the invention shown in the drawings. In the following description, it will explain many details to provide a thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without using some or all of these specific details. In other examples, the known paper size of the paper applies to the Chinese National Standard (CNS) A4 (210 X 297 mm). Qi i i ': 才 573369 A7 ___B7___ V. Description of the invention (8) It will not be described in detail to avoid unnecessarily obscuring the present invention. According to an embodiment of the present invention, there is provided a method for etching an aluminum-containing ammonium-containing layer provided above a substrate and under an etching mask using a plasma in a plasma processing chamber. A source gas containing Η B r and C 1 2 is flowed into the plasma processing chamber, and the plasma is impinged from the source gas. The plasma is then used to penetrate at least a portion of the uranium through the aluminum-ammonium-containing layer. According to another aspect of the present invention, a method is provided for planning a plasma processing system to at least partially etch through an aluminum-ammonium-containing layer disposed on a substrate and under an etched mask. It provides a plasma processing system having a plasma processing chamber. By planning the plasma processing chamber to receive uranium-engraved gas containing plutonium B r and C 1 2, and planning a bias power source associated with the plasma processing chamber for supply from the plutonium B r A plasma is formed in C1 and C12 to at least partially etch through the aluminum-containing sharp layer, and the processing chamber is planned to be capable of etching the aluminum-containing ammonium layer. According to still another aspect of the present invention, it provides a method for etching an aluminum-containing ammonium layer on a substrate by plasma uranium, and under the etching mask. A substrate having an aluminum-ammonium-containing layer was placed in a plasma reactor. The plasma reactor is an inductively coupled plasma reactor having a coil as a top electrode and a chuck as a bottom electrode. Then, an etching gas containing HB r and C 12 is injected into the plasma reactor, and a plasma is impinged from the etching gas in the plasma reactor. Then, the plasma is used to etch the aluminum-ammonium-containing layer in the inductive coupling plasma reactor, and the inductive coupling plasma reactor uses a bias workbook of at least 500 W in the etching operation. Paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) -11- --- --- (Please read the precautions on the back before filling out this page) · Order · 573369 seat %% A7 ___B7__ V. Description of the invention (9) The rate is helpful for the discussion in this article. Figure 2 shows a simplified schematic diagram of an exemplary inductively coupled plasma processing system, which represents a suitable low-voltage high-density plasma processing system. According to an embodiment of the present invention, the ΗBI · / C 12 chemical is used to etch the aluminum-containing 钹 layer. An example of such an inductively-coupled plasma processing system is a TC P TM brand system called ContinuumTM, which can be obtained from Lam Research Company located in Fremont, California, USA, and is used in one of the preferred embodiments of the present invention. In the embodiment, the touching operation is performed. However, it should be understood that the present invention is not limited to the use of this particular type of plasma reactor. It is believed that the present invention can be implemented in any high-density and low-pressure plasma reactor, including those using a cyclotron resonance (ECR) system, a helical accelerator, a helical resonator, or the like. Referring now to FIG. 2, a plasma processing system 200 includes a plasma processing chamber 202. An electrode 204 is provided above the chamber 202, which is implemented as a wire coil in the example of FIG. 2, but other mechanisms for coupling radio frequency energy to the plasma in the plasma processing chamber can also be used. . The electrode 2 0 4 is supplied with energy by a radio frequency (RF) generator 2 06 via a matching network 2 0 8. In the example of FIG. 2, the RF generator 206 provides RF energy at a frequency of approximately 13.56 MHz, but other suitable frequencies may be used. In the plasma processing chamber 200, it is shown that there is a sprinkler 2 10, which represents a gas distribution device for releasing a gaseous etching material, such as the source gas of the present invention, to the substrate and the substrate. 2 1 4 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) -12------------ M -Packing-(Please read the precautions on the back before (Fill in this page) Sound ί% 丨 才 573369 Α7 ------- Β7_ V. Description of the invention (10) Within the RF induction plasma area 2 1 2. However, other types of gas SB delivery devices, such as a gas distribution ring, or a simple port on the wall of the chamber can also be used. The substrate 2 1 4 is provided with a layer containing aluminum ammonium, which is fed into the plasma processing chamber 2 02 and placed on a chuck 2 1 6 which can be used as a second electrode. And it is preferred that the voltage is biased by a radio frequency generator 2 1 8 through a matching network 2 2 0. As with the RF generator 2 06, the RF generator 2 1 8 in the example of FIG. 2 can provide RF energy at a frequency of about 4 MHz, but other suitable frequencies include different frequencies than those provided by the RF generator 2 06 The frequency can also be used. A gas for heat exchange such as helium is injected under pressure (for example, about 4 Torr in one embodiment) into a region between the chuck 2 1 6 and the base 2 1 4 to control the base and The heat transfer between the chucks ensures an even and repeatable etching result. To facilitate the engraving operation, the source gas system is injected through the spray head 2 10 and is ignited by the R F energy supplied by the R F generators 20 6 and 2 1 8. In an etching operation containing an aluminum sharp layer, the pressure in the chamber 200 is preferably kept at a low pressure, for example, between about 3 to about 20 mTorr in one embodiment. In addition, since this is a high-density etching operation, the ion flux should be quite high, such as at least about 101 ions / cm3, and preferably at least about 101 ions / cm3. As mentioned previously, the present invention uses a source gas containing rhenium Br and C1 to etch through the aluminum-containing neodymium layer. Conventional chlorine-based etching Chemicals are mostly replaced by Η B r. Η The reason why B r will be installed --- (Please read the precautions on the back before filling this page) »· This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -13- 573369 A7 B7 V. Description of the invention (n) was selected to replace chlorine because it can supply high ion energy while maintaining the high etch selectivity (Al Etch Selectivity) of aluminum against uranium agents, which can effectively make aluminum The ammonium layer invades the uranium without causing undue damage to the uranium-resistant mask. Bromine-based chemicals can also obtain fairly straight profiles in anisotropic etching operations of aluminum-ammonium-containing layers, which is believed to be caused by the passivation effect of the sidewalls when etching operations using bromine ions. This can reduce the excessive cutting results caused by the conventional chlorine-based uranium etch chemicals, and can obtain the smooth tapered contours required for applications such as the manufacture of flat panel displays. In addition to having good contour shape control capabilities, the etching chemicals of the present invention also perform well in terms of etching uniformity. The etching depth test performed after the partial etching step shows that the use of the chemical of the present invention to obtain the uranium etching operation of the aluminum-containing ammonium layer can obtain fairly average results, for example, the etching rate is within ± 10%. In addition, since the loss of the resist mask can be minimized, the chemical of the present invention can also be used for relatively precise etching operations, which can provide better control results for important dimensions. FIG. 3 shows an exemplary layer stack structure 300, which includes an aluminum-ammonium-containing layer 302, which is disposed above the substrate 304 and below the resist mask 306. This aluminum-containing samarium layer 3 0 2 is etched with the samarium Br / C 12 chemical of the present invention. Replacing a part of C 1 2 with Η B r can obtain the best etching results with high ion energy, which can advantageously eliminate the problem of excessive degradation of the etching mask (that is, the resist mask or the hard mask). And this in turn avoids the situation of excessively forming jagged side walls along the etching surface of the aluminum-containing hafnium layer 3 02, and it can also reduce the number of layers in this layer. -(Please read the precautions on the back before filling this page) ¼. The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) 573369 A7 __ B7 V. Description of the invention (12) Stacked structure 3 Excessive accumulation of residues on the exposed surface inside and outside. The engraving operation with the rhenium Br / C12 chemical of the present invention can obtain a smooth push-out side wall 308 along the aluminum ammonium-containing layer 3202, and can significantly reduce the residue. This improvement can be known by comparing the improvement characteristics in Fig. 3 with the corresponding results obtained by the etching operation performed by conventional chemicals shown in Fig. 1. An essential feature of using the Η B r / C 1 2 etching chemicals of the present invention is the use of high bias power (Bias Power). The bias power used may be between about 500 W and about 300 W. In this embodiment, the bias power is set to 2 500 W. The purpose of using high bias power is to help control the etch selectivity to the resist. Although it is important to protect the resist mask, certain resists must still be etched away to obtain the desired etched profile. Figures 4 (a) and 4 (b) show the engraving profiles using low and high bias powers, respectively. The etching rate of the aluminum-ammonium-containing layer remains unchanged, but the etching rate of the anti-uranium agent changes significantly as the bias power moves, that is, the etching rate of the anti-uranium agent increases as the bias power increases. . In FIG. 4 (a), the low bias power will reduce the impact and cause the resist mask 402 to erode away at a lower rate, which will hinder the etching of the aluminum-containing hafnium layer in the vertical direction. Therefore, the etching effect in the lateral direction will have a stronger effect on the aluminum-containing ammonium layer 404, which makes the aluminum-containing hafnium layer 404 have a spiral profile. Such spiral contours will form voids during the subsequent conformal deposition of the layers. Figure 4 (b) shows the layer stack structure 4 10, which has a layer of -15- -windowing --- (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 573369 A7 ___ Β7__ 5. Description of the invention (13) The aluminum-ammonium-containing layer 4 1 2 is etched under high bias power. In this example, the resist layer 4 1 4 will be eroded away at a faster rate, which makes the vertical etch effect play a more helpful role in forming the etch contour, resulting in a smoother and more aggressive push. Contour of the shape of the aluminum-containing hafnium layer 4 1 2. On the contrary, the bias power is maintained between about 0 W and about 2000 W on the conventional chemicals. Although high bias power can indeed help reduce the etching selectivity of the aluminum-containing ammonium-containing layer relative to the resist, the bias power is set higher than 2000 W in the vicinity, while using conventional gaseous etching chemistry Products, it can cause serious damage to the resist, and also cause problems in contour control and residue formation. The specific composition of the chemical of the present invention can also be adjusted so that the angle of the contour can be controlled. This is particularly useful in the manufacture of flat panel displays, where the contour angle plays a very important role in determining pixel size and flatness. To facilitate the discussion herein, several layered structures are shown in Figures 5 (a) -5 (c), each of which includes an aluminum ammonium layer, which is a different variation of the technology of the present invention To etch, including using different source gas components to control the contour angle. Please note that the results obtained by the etching operations in Figures 5 (a)-5 (c) are only exemplary i I, and the actual results may depend on the specific reactor and the specific a ^ etching conditions, And something changed. FIG. 5 (a) shows a layer stack structure 500 having a layer of aluminum alloy layer 502, which is located below the resist mask layer 504 and above the substrate body 506. The aluminum-containing ammonium-containing layer 502 is engraved with a gaseous chemical having a HBr: C1; ratio 1 of about 2: 1. As a result, it can be obtained that the paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297) (Centi) -16- • Install i I (please read the precautions on the back before filling out this page) »· 573369 A7 B7 V. Description of the invention (14) Contour angle 5 0 8 to about 80 degrees. Fig. 5 (b) shows a layer stack structure 5 10, which has an aluminum-ammonium-containing layer 512, which is located below the resist mask layer 514 and above the substrate 5 1 6. The aluminum-containing samarium layer 5 1 2 is etched with a gaseous chemical having a ratio of HB r: C 12 to approximately 1: 1, and as a result, a contour angle 5 1 8 of approximately 60 degrees can be obtained. Fig. 5 (c) shows a layer stack structure 520 having an aluminum-containing hafnium layer 522, which is located below the resist mask layer 524 and above the substrate 526. The aluminum-ammonium-containing layer 522 is etched with a gaseous chemical having a ratio of HBi ·: C 12 to about 1: 2: As a result, a contour angle 5 2 8 of about 40 degrees can be obtained. Although the slope of the push-shaped profile of the aluminum-containing ytterbium layer can be changed according to the user's preference, it can also be determined by the demand of the final product. For example, the aluminum-containing plutonium layer available on flat-panel displays can be engraved with Br / C 12 gaseous chemicals. If this chemical has a high Η B r: C 1 2 composition ratio, the etched layer will have a steeper angle, which will cause the final product to have a smaller pixel size and therefore higher resolution . In addition, this steeper angle can provide a larger pixel size and lower resolution of the final product, but has a brighter display result. In addition, steep contour angles provide better control of important dimensions, which to some extent results in greater reliability of the final product. However, the large step size of subsequent layers can cause unwanted voids during the deposition of subsequent layers. Conversely, if this gaseous chemical has a low Η B r: C 1 2 composition ratio, the etched layer will have a larger push angle, -install --- (Please read the precautions on the back first (Fill in this page again) The paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) -17- 573369 A7 B7 V. Description of the invention (15) The best step size, while providing a flatter end product, but with larger pixels and lower resolution. In the example of manufacturing a flat panel display, the ultimate goal is to obtain a final product with high resolution without sacrificing brightness and flatness. In order to meet these seemingly conflicting goals, the ideal result can be the etching operation of the aluminum-ammonium-containing layer by using a gaseous chemical mainly Η B r, so as to obtain a close to 90 ° contour angle. The results are drawn, and the deposition operation is performed with an extremely advanced deposition tool, which can overcome the problem of voids and produce reliable components with high resolution and sufficient brightness. As can be seen from the foregoing, the present invention advantageously uses a source gas containing ΗBr and C12 to at least partially etch through the aluminum-ammonium-containing layer. In a non-obvious and novel way, the present invention systematically adds ΗB r to the etchant chemicals to replace part of C 1 2 and ------ ------ ----------------------------- ~ One ---......... BC 1 3 (and (Comparison of gaseous chemicals used in conventional uranium engraving). The addition of Η B r is not intuitively associative, because 并不是 B r is not a traditional uranium engraving operator for aluminum. In fact, ordinary people may increase non-volatile by-products during the etching process. The possibility of deposition results, which would require more frequent or deeper cleaning of the plasma processing chamber, and avoid the use of Η B r. In addition, due to toxicity and high cost, Η B r is generally not a preferred ingredient for etchant gaseous chemicals. Although the basic chemicals include ΗBr and C12, other additives can be added as long as they do not substantially alter the basic characteristics of the aluminum-containing rhenium layer by providing hydrogen, bromine, and chlorine in this etchant. For example, BC 1 3 can be added instead of C 1 2 as long as the HB I · content and chlorine content of this paper are in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) 1 · ------ ---- Equipment --- (Please read the precautions on the back before filling this page) Order: 573369 Qi I! Cai i A7 B7 V. Description of the invention (16) The balance between the quantities can be kept within a given range It does not adversely affect the characteristics provided by the present invention, such as the characteristics of ion energy, etch rate, contour control, and selectivity of anti-liens. In other examples, it may also add one or more inert gases, such as argon, neon or nitrogen. Examples In the following, the present invention is used to pierce through an exemplary layer stack structure having an aluminum-containing ammonium-containing layer in the ContiiuiumTM inductively coupled plasma reactor using the technology of the present invention with appropriate parameters. It can be easily understood and belongs to those who are familiar with this technology. If necessary, these parameters can be adjusted or modified for uranium engraving of substrates with different sizes or for matching with specific plasma chambers. demand. Table 1 provides an approximate range of parameters suitable for use in a plasma reactor, as well as examples of large pumps, such as electrode power (in watts), bias power (in watts), and pressure (in millitorr) And HBr: Cl2 ratio. Table 2 provides an example of the parameter table that can be used by the preferred embodiment in the above (: 0! 11 丨 111 111 111 ^ plasma reactor), which contains information such as chamber pressure (in millitorr), top electrode Power (in watts), Bias power (in watts), Η BI * and C 1 2 flow rates (in see), ammonia back pressure (in torr), and electrode temperature (in t (Units) and other variables. --Installation-(Please read the notes on the back before filling out this page) »_ p This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -19- 573369 A7 B7 V. Description of the invention (17) Variables / ranges are better approximated; approximated are better; approximated exemplary parameters Top electrode power (W) 1500-4000 2500-3500 3000 Bias power (W) 500-3500 2000 -3000 2500 Pressure (mTorr) 3-20 5-8 5 HBr: Ch 99: 1-1: 10 99: 1-1: 5 2: 1 Table 1 Variable pressure (mTorr) Top electrode power (W) Partial Pressure power (W) HBr flow (seem) Ch flow (seem) Helium back pressure (torr) Electrode temperature (° C) Number 値 5 3000 2500 300 150 4 60 Table 2 — — — — — — — — — — I * I (Please read the notes on the back before filling this page) Several preferred embodiments are used to illustrate the present invention, but there are still many changes, exchanges, and equivalents that fall into the scope of the present invention. It should be noted that there are many different ways that can be used to implement the method of the present invention Therefore, it intends to treat the scope of the following patent applications as including all such changes, exchanges, and equivalents that fall within the spirit and scope of the present invention. Η:
本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） _ 20 -This paper size applies to China National Standard (CNS) A4 (210 χ 297 mm) _ 20-