FR2312114A1 - Attaque de materiaux par ions reactifs - Google Patents
Attaque de materiaux par ions reactifsInfo
- Publication number
- FR2312114A1 FR2312114A1 FR7610361A FR7610361A FR2312114A1 FR 2312114 A1 FR2312114 A1 FR 2312114A1 FR 7610361 A FR7610361 A FR 7610361A FR 7610361 A FR7610361 A FR 7610361A FR 2312114 A1 FR2312114 A1 FR 2312114A1
- Authority
- FR
- France
- Prior art keywords
- cpds
- metal
- semiconductor
- bromine
- iodine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 title abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 title 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 title 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 title 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 title 1
- 229910052794 bromium Inorganic materials 0.000 title 1
- 229910052801 chlorine Inorganic materials 0.000 title 1
- 239000000460 chlorine Substances 0.000 title 1
- 229910052740 iodine Inorganic materials 0.000 title 1
- 239000011630 iodine Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/580,102 US3994793A (en) | 1975-05-22 | 1975-05-22 | Reactive ion etching of aluminum |
US59441875A | 1975-07-09 | 1975-07-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2312114A1 true FR2312114A1 (fr) | 1976-12-17 |
FR2312114B1 FR2312114B1 (fr) | 1979-07-13 |
Family
ID=27077955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7610361A Granted FR2312114A1 (fr) | 1975-05-22 | 1976-04-01 | Attaque de materiaux par ions reactifs |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE2617483C2 (fr) |
FR (1) | FR2312114A1 (fr) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0002798A2 (fr) * | 1977-12-30 | 1979-07-11 | International Business Machines Corporation | Procédé pour enlever une couche métallique d'un corps semiconducteur par attaque par ions réactifs |
EP0008359A2 (fr) * | 1978-08-21 | 1980-03-05 | International Business Machines Corporation | Procédé de fabrication d'une structure à couches minces |
EP0012327A1 (fr) * | 1978-12-18 | 1980-06-25 | International Business Machines Corporation | Procédé lithographique de décapage par ions réactifs |
EP0089503A2 (fr) * | 1982-03-22 | 1983-09-28 | International Business Machines Corporation | Procédé de fabrication d'un transistor bipolaire de grande performance dans un circuit intégré |
EP0089504A2 (fr) * | 1982-03-22 | 1983-09-28 | International Business Machines Corporation | Procédé de fabrication d'un circuit intégré comprenant des structures de transistors à largeurs de base multiples |
EP0134999A1 (fr) * | 1983-08-26 | 1985-03-27 | International Business Machines Corporation | Montage portepièce composé pour appareil d'attaque ionique réactif |
EP0165400A1 (fr) * | 1984-06-22 | 1985-12-27 | International Business Machines Corporation | Dispositif pour graver avec un plasma |
EP0228865A2 (fr) * | 1985-12-30 | 1987-07-15 | Applied Materials, Inc. | Attaque chimique utilisant un plasma par magnétron |
EP0295581A1 (fr) * | 1987-06-19 | 1988-12-21 | Tegal Corporation | Procédé de décapage d'aluminium dans un plasma |
FR2673764A1 (fr) * | 1991-03-05 | 1992-09-11 | Siemens Ag | Procede pour realiser la corrosion anisotrope a sec de plans de voies conductrices, contenant de l'aluminium ou des alliages d'aluminium, dans des circuits integres a semiconducteurs. |
EP0535540A2 (fr) * | 1991-10-02 | 1993-04-07 | Siemens Aktiengesellschaft | Procédé de décapage de couches contenant de l'aluminium |
EP0622477A1 (fr) * | 1993-02-24 | 1994-11-02 | Applied Materials, Inc. | Procédé pour le décapage d'aluminium ou d'alliages d'aluminium utilisant un agent de décapage contenant HC1, du chlore ainsi que N2 |
US5849641A (en) * | 1997-03-19 | 1998-12-15 | Lam Research Corporation | Methods and apparatus for etching a conductive layer to improve yield |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4104086A (en) * | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
US4139442A (en) | 1977-09-13 | 1979-02-13 | International Business Machines Corporation | Reactive ion etching method for producing deep dielectric isolation in silicon |
US4172004A (en) * | 1977-10-20 | 1979-10-23 | International Business Machines Corporation | Method for forming dense dry etched multi-level metallurgy with non-overlapped vias |
US4196440A (en) * | 1978-05-25 | 1980-04-01 | International Business Machines Corporation | Lateral PNP or NPN with a high gain |
DE3030814C2 (de) * | 1979-08-17 | 1983-06-16 | Tokuda Seisakusyo, Ltd., Zama, Kanagawa | Verfahren zum Plasmaätzen eines Werkstücks |
DE3016736A1 (de) * | 1980-04-30 | 1981-11-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen geaetzter strukturen in siliziumoxidschichten |
JPS6056431B2 (ja) * | 1980-10-09 | 1985-12-10 | 三菱電機株式会社 | プラズマエツチング装置 |
DE3102647A1 (de) * | 1981-01-27 | 1982-08-19 | Siemens AG, 1000 Berlin und 8000 München | Strukturierung von metalloxidmasken, insbesondere durch reaktives ionenstrahlaetzen |
DE3215411A1 (de) * | 1982-04-24 | 1983-10-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen von oeffnungen mit hilfe einer maske in einer auf einer unterlage befindlichen schicht |
US4450042A (en) * | 1982-07-06 | 1984-05-22 | Texas Instruments Incorporated | Plasma etch chemistry for anisotropic etching of silicon |
AT386316B (de) * | 1985-11-11 | 1988-08-10 | Voest Alpine Ag | Plasmareaktor zum aetzen von leiterplatten |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3617463A (en) * | 1969-06-18 | 1971-11-02 | Ibm | Apparatus and method for sputter etching |
DE2449731A1 (de) * | 1973-12-03 | 1975-06-05 | Hewlett Packard Co | Aetzverfahren |
-
1976
- 1976-04-01 FR FR7610361A patent/FR2312114A1/fr active Granted
- 1976-04-22 DE DE19762617483 patent/DE2617483C2/de not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0002798A3 (en) * | 1977-12-30 | 1979-07-25 | International Business Machines Corporation | Process for the removal of a metallic layer from a semiconductor body by reactive ion etching |
EP0002798A2 (fr) * | 1977-12-30 | 1979-07-11 | International Business Machines Corporation | Procédé pour enlever une couche métallique d'un corps semiconducteur par attaque par ions réactifs |
EP0008359A2 (fr) * | 1978-08-21 | 1980-03-05 | International Business Machines Corporation | Procédé de fabrication d'une structure à couches minces |
EP0008359A3 (en) * | 1978-08-21 | 1980-03-19 | International Business Machines Corporation | Process for making a thin-film structure |
EP0012327A1 (fr) * | 1978-12-18 | 1980-06-25 | International Business Machines Corporation | Procédé lithographique de décapage par ions réactifs |
EP0089503A3 (en) * | 1982-03-22 | 1986-09-17 | International Business Machines Corporation | Method for making a high performance bipolar transistor in an integrated circuit |
EP0089503A2 (fr) * | 1982-03-22 | 1983-09-28 | International Business Machines Corporation | Procédé de fabrication d'un transistor bipolaire de grande performance dans un circuit intégré |
EP0089504A2 (fr) * | 1982-03-22 | 1983-09-28 | International Business Machines Corporation | Procédé de fabrication d'un circuit intégré comprenant des structures de transistors à largeurs de base multiples |
EP0089504A3 (en) * | 1982-03-22 | 1986-09-10 | International Business Machines Corporation | Method for making an integrated circuit with multiple base width transistor structures |
EP0134999A1 (fr) * | 1983-08-26 | 1985-03-27 | International Business Machines Corporation | Montage portepièce composé pour appareil d'attaque ionique réactif |
EP0165400A1 (fr) * | 1984-06-22 | 1985-12-27 | International Business Machines Corporation | Dispositif pour graver avec un plasma |
EP0228865A2 (fr) * | 1985-12-30 | 1987-07-15 | Applied Materials, Inc. | Attaque chimique utilisant un plasma par magnétron |
EP0228865A3 (fr) * | 1985-12-30 | 1990-01-17 | Applied Materials, Inc. | Attaque chimique utilisant un plasma par magnétron |
EP0295581A1 (fr) * | 1987-06-19 | 1988-12-21 | Tegal Corporation | Procédé de décapage d'aluminium dans un plasma |
FR2673764A1 (fr) * | 1991-03-05 | 1992-09-11 | Siemens Ag | Procede pour realiser la corrosion anisotrope a sec de plans de voies conductrices, contenant de l'aluminium ou des alliages d'aluminium, dans des circuits integres a semiconducteurs. |
EP0535540A2 (fr) * | 1991-10-02 | 1993-04-07 | Siemens Aktiengesellschaft | Procédé de décapage de couches contenant de l'aluminium |
EP0535540A3 (en) * | 1991-10-02 | 1994-10-19 | Siemens Ag | Etching process for aluminium-containing coatings |
EP0622477A1 (fr) * | 1993-02-24 | 1994-11-02 | Applied Materials, Inc. | Procédé pour le décapage d'aluminium ou d'alliages d'aluminium utilisant un agent de décapage contenant HC1, du chlore ainsi que N2 |
US5849641A (en) * | 1997-03-19 | 1998-12-15 | Lam Research Corporation | Methods and apparatus for etching a conductive layer to improve yield |
Also Published As
Publication number | Publication date |
---|---|
DE2617483A1 (de) | 1976-12-09 |
DE2617483C2 (de) | 1984-11-22 |
FR2312114B1 (fr) | 1979-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse | ||
AR | Application made for restoration | ||
DS | Decision of the director general to state about an appeal |