JPS5726431A - Forming method for electrode and wiring layer of semiconductor device - Google Patents

Forming method for electrode and wiring layer of semiconductor device

Info

Publication number
JPS5726431A
JPS5726431A JP10200080A JP10200080A JPS5726431A JP S5726431 A JPS5726431 A JP S5726431A JP 10200080 A JP10200080 A JP 10200080A JP 10200080 A JP10200080 A JP 10200080A JP S5726431 A JPS5726431 A JP S5726431A
Authority
JP
Japan
Prior art keywords
electrode
gas plasma
readily
aluminum
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10200080A
Other languages
Japanese (ja)
Inventor
Yoshiki Suzuki
Yaichiro Watakabe
Teruhiko Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10200080A priority Critical patent/JPS5726431A/en
Publication of JPS5726431A publication Critical patent/JPS5726431A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To readily obtain aluminum electrode and wire by laminating W, T, Nb, etc. on an aluminum layer, etching it with gas plasma containing F, and then etching it with gas plasma containing chlorine. CONSTITUTION:Al4, W5 are sputtered on an oxidized film 3 containing the exposed part of an active layer 2. A resist mask 6 is covered thereon, and when it is exposed with gas plasma of CF4:Ar=3:7, the W readily becomes fluoride and is selectively etched. When it is then treated with gas plasma of CCl4:Ar=3:7, the aluminum becomes chloride, and is thus etched, Al2O3 is not formed on the surface, and microminiature pattern of aluminum electrode and wiring can be readily obtained. Similarly, the electrode and wire can be obtained by using metals readily forming fluoride, e.g., Ti, Mo, Nb., etc.
JP10200080A 1980-07-24 1980-07-24 Forming method for electrode and wiring layer of semiconductor device Pending JPS5726431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10200080A JPS5726431A (en) 1980-07-24 1980-07-24 Forming method for electrode and wiring layer of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10200080A JPS5726431A (en) 1980-07-24 1980-07-24 Forming method for electrode and wiring layer of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5726431A true JPS5726431A (en) 1982-02-12

Family

ID=14315529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10200080A Pending JPS5726431A (en) 1980-07-24 1980-07-24 Forming method for electrode and wiring layer of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726431A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455412B1 (en) * 1989-11-30 2002-09-24 Stmicroelectronics, Inc. Semiconductor contact via structure and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455412B1 (en) * 1989-11-30 2002-09-24 Stmicroelectronics, Inc. Semiconductor contact via structure and method

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