JPS5740930A - Formation of wiring pattern - Google Patents
Formation of wiring patternInfo
- Publication number
- JPS5740930A JPS5740930A JP11661180A JP11661180A JPS5740930A JP S5740930 A JPS5740930 A JP S5740930A JP 11661180 A JP11661180 A JP 11661180A JP 11661180 A JP11661180 A JP 11661180A JP S5740930 A JPS5740930 A JP S5740930A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- etching
- exposed
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000000992 sputter etching Methods 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To enable to control etching time as well as to contrive microscopic formation of a pattern by a method wherein, when an Al wiring pattern is formed on an insulating layer, the Al layer which was exposed by performing a plasma etching is removed after the oxide layer on the surface of the Al layer has been removed by performing an ion etching. CONSTITUTION:The Al layer 5 is formed on the whole surface of the insulating film layer 3, including the surface of the active region which was exposed by an aperture 4. At this time, an oxide layer 6 of aluminium oxide is formed on the surface of the Al layer by natural oxidation. On this surface, a mask pattern 7 is formed. The oxide layer 6 is removed by performing an ion etching using an Ar gas and then the exposed Al layer 5, which is not covering a mask pattern 7, is removed by performing a gas plasma ethcing using carbon tetrachloride gas. Through these procedures, the etching time can be cut down and the etching time can be controlled easily, thereby enabling to contrive microscopic formation of a pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11661180A JPS5740930A (en) | 1980-08-22 | 1980-08-22 | Formation of wiring pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11661180A JPS5740930A (en) | 1980-08-22 | 1980-08-22 | Formation of wiring pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5740930A true JPS5740930A (en) | 1982-03-06 |
Family
ID=14691452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11661180A Pending JPS5740930A (en) | 1980-08-22 | 1980-08-22 | Formation of wiring pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740930A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03140615A (en) * | 1989-10-26 | 1991-06-14 | Timken Co:The | Bearing |
-
1980
- 1980-08-22 JP JP11661180A patent/JPS5740930A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03140615A (en) * | 1989-10-26 | 1991-06-14 | Timken Co:The | Bearing |
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