JPS56105636A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS56105636A JPS56105636A JP854780A JP854780A JPS56105636A JP S56105636 A JPS56105636 A JP S56105636A JP 854780 A JP854780 A JP 854780A JP 854780 A JP854780 A JP 854780A JP S56105636 A JPS56105636 A JP S56105636A
- Authority
- JP
- Japan
- Prior art keywords
- organic matter
- oxide
- mask
- metal
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Abstract
PURPOSE:To obtain a mask utilizing the difference of etching speed by a method wherein a three-layers film consisting of an organic matter, a metal or an oxide, an organic matter is etched with O2 ion beam. CONSTITUTION:The etching speed of O2 ion beam acting as a reaction gas differs according to the material, and is slow against the metal and the oxide and is exceedingly rapid against the organic matter. Utilizing this quality, the three layers of organic matter-metal or oxide-organic matter are piled up and etching is performed in order to form the mask, and when the material to be processed is etched, the minute pattern can be formed, and moreover the drawing speed of O2 ion beam can be largely elevated than the case of a single layer organic matter mask.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP854780A JPS56105636A (en) | 1980-01-28 | 1980-01-28 | Formation of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP854780A JPS56105636A (en) | 1980-01-28 | 1980-01-28 | Formation of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56105636A true JPS56105636A (en) | 1981-08-22 |
Family
ID=11696155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP854780A Pending JPS56105636A (en) | 1980-01-28 | 1980-01-28 | Formation of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56105636A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07288247A (en) * | 1994-04-19 | 1995-10-31 | Nec Corp | Dry etching method for silicon oxide film |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS546570A (en) * | 1977-06-16 | 1979-01-18 | Sumitomo Electric Ind Ltd | Production of optical guides |
-
1980
- 1980-01-28 JP JP854780A patent/JPS56105636A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS546570A (en) * | 1977-06-16 | 1979-01-18 | Sumitomo Electric Ind Ltd | Production of optical guides |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07288247A (en) * | 1994-04-19 | 1995-10-31 | Nec Corp | Dry etching method for silicon oxide film |
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