JPS56157026A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS56157026A
JPS56157026A JP5998880A JP5998880A JPS56157026A JP S56157026 A JPS56157026 A JP S56157026A JP 5998880 A JP5998880 A JP 5998880A JP 5998880 A JP5998880 A JP 5998880A JP S56157026 A JPS56157026 A JP S56157026A
Authority
JP
Japan
Prior art keywords
pattern
mask
layer
film
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5998880A
Other languages
Japanese (ja)
Other versions
JPH0319692B2 (en
Inventor
Yoshiharu Ozaki
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5998880A priority Critical patent/JPS56157026A/en
Publication of JPS56157026A publication Critical patent/JPS56157026A/en
Publication of JPH0319692B2 publication Critical patent/JPH0319692B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To form a minute pattern on a material layer to be procesed by a method wherein a beam of corpuscular rays is applied on a accumulated layer provided on the surface of the material layer to be processed by a plasma gas, and thus formed mask is utilized. CONSTITUTION:An SiO2 film 2 to be processed to form a layer is formed on an Si substrate 1. After the film 2 is exposed in a plasma atmosphere consisting of CF4 gas to form on the surface the accumulated layer 3 of about 100Angstrom thickness containing a compound consisted of C and F, the beam of corpuscular rays is applied thereon to form the maske of the prescribed pattern, and utilizing this mask 3, reactive sputter etching is performed to each the SiO2 film 2 to form the prescribed pattern. Accordingly because the film thickness of the mask material is about 100Angstrom , resolving power of pattern is enhanced and the formation of minute pattern of 1mum or less becomes possible.
JP5998880A 1980-05-08 1980-05-08 Formation of pattern Granted JPS56157026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5998880A JPS56157026A (en) 1980-05-08 1980-05-08 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5998880A JPS56157026A (en) 1980-05-08 1980-05-08 Formation of pattern

Publications (2)

Publication Number Publication Date
JPS56157026A true JPS56157026A (en) 1981-12-04
JPH0319692B2 JPH0319692B2 (en) 1991-03-15

Family

ID=13129051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5998880A Granted JPS56157026A (en) 1980-05-08 1980-05-08 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS56157026A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198327A (en) * 1987-02-13 1988-08-17 Nec Corp Forming method for ultrafine pattern of adsorption layer due to electron beam separation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527315A (en) * 1975-05-28 1977-01-20 Pechiney Aluminium Making of wire consist of aluminium magnesiummsilicon alloy
JPS55129345A (en) * 1979-03-29 1980-10-07 Ulvac Corp Electron beam plate making method by vapor phase film formation and vapor phase development

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527315A (en) * 1975-05-28 1977-01-20 Pechiney Aluminium Making of wire consist of aluminium magnesiummsilicon alloy
JPS55129345A (en) * 1979-03-29 1980-10-07 Ulvac Corp Electron beam plate making method by vapor phase film formation and vapor phase development

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198327A (en) * 1987-02-13 1988-08-17 Nec Corp Forming method for ultrafine pattern of adsorption layer due to electron beam separation

Also Published As

Publication number Publication date
JPH0319692B2 (en) 1991-03-15

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