JPS63198327A - Forming method for ultrafine pattern of adsorption layer due to electron beam separation - Google Patents
Forming method for ultrafine pattern of adsorption layer due to electron beam separationInfo
- Publication number
- JPS63198327A JPS63198327A JP2965487A JP2965487A JPS63198327A JP S63198327 A JPS63198327 A JP S63198327A JP 2965487 A JP2965487 A JP 2965487A JP 2965487 A JP2965487 A JP 2965487A JP S63198327 A JPS63198327 A JP S63198327A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- substrate
- adsorption layer
- adsorption
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 35
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 10
- 238000000926 separation method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 238000003795 desorption Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 description 8
- 239000003463 adsorbent Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000864 Auger spectrum Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は基板上の吸着層に電子ビームを照射して所望の
パターンを形成するパターン形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pattern forming method for forming a desired pattern by irradiating an adsorption layer on a substrate with an electron beam.
［従来の技術とその問題点］
従来、基板上に吸着層のパターンを形成する方法として
は、レーザーを用いた光脱離の方法が用いられているが
、レーザーでは、その分解能はレーザーの波長で制限さ
れ、約１趨程度が限度であり、超微細パターン形成は困
難であった。[Conventional technology and its problems] Conventionally, a method of optical desorption using a laser has been used to form an adsorption layer pattern on a substrate. The limit is about one line, making it difficult to form ultra-fine patterns.
本発明は以上のような従来の事情に対処してなされたも
ので、従来方法では不可能であった吸着層上の超微細パ
ターン形成を可能とし、かつ電子ビーム照射によって引
き起こされる吸着層の脱離を“′その場（ｉｎ ５ｉｔ
ｕ）観察″オージェ分析により分析しつつパターン形成
を行う吸着層の超微細パターン形成方法を提供すること
を目的とする。The present invention has been made in response to the above-mentioned conventional circumstances, and enables ultra-fine pattern formation on an adsorption layer, which was impossible with conventional methods, and eliminates desorption of the adsorption layer caused by electron beam irradiation. in 5it
u) Observation The object of the present invention is to provide a method for forming an ultra-fine pattern on an adsorption layer in which the pattern is formed while being analyzed by Auger analysis.
［問題点を解決するための手段］
本発明は吸着させるべき物質を被吸着基板上に供給して
基板上に吸着物質よりなる吸着層を形成する工程と、こ
の吸着層の所望の部分に電子ビームを照射して前記吸着
物質を脱離させると共に、オージェ分析により前記吸着
層を分析しつつ前記吸着層に所望のパターンを形成させ
る工程とを有することを特徴とする電子ビーム脱離によ
る吸着層の超微細パターン形成方法である。[Means for Solving the Problems] The present invention comprises a step of supplying a substance to be adsorbed onto a substrate to be adsorbed to form an adsorption layer made of the adsorption substance on the substrate, and a step of supplying a substance to be adsorbed onto a substrate to form an adsorption layer made of the adsorption substance, and applying electrons to a desired portion of this adsorption layer. An adsorption layer formed by electron beam desorption, comprising the steps of irradiating a beam to desorb the adsorbed substance, and forming a desired pattern on the adsorption layer while analyzing the adsorption layer by Auger analysis. This is a method for forming ultra-fine patterns.
［作 用］ 次に本発明の作用について、第１図を用いて説明する。[Work] Next, the operation of the present invention will be explained using FIG.
第１図は本発明の方法に用いる電子ビーム脱離の原理を
説明するための基板の模式的断面図である。基板１２を
高真空チェンバー内に設置し、吸着ガスを導入し、吸着
分子１１を基板１２に全面吸着させる（第１図（ａ））
。次に、集束した電子ビームを吸着分子１１の層に照射
することにより、吸着分子１１を脱離させ、脱離分子１
３はチェンバー外へ排出される（第１図（ｂ））。この
ようにして、電子ビーム照射した吸着分子のみを選択脱
離させることができる。FIG. 1 is a schematic cross-sectional view of a substrate for explaining the principle of electron beam desorption used in the method of the present invention. The substrate 12 is placed in a high vacuum chamber, an adsorption gas is introduced, and the adsorption molecules 11 are completely adsorbed onto the substrate 12 (FIG. 1(a)).
. Next, by irradiating the layer of adsorbed molecules 11 with a focused electron beam, the adsorbed molecules 11 are desorbed, and the desorbed molecules 1
3 is discharged out of the chamber (FIG. 1(b)). In this way, only the adsorbed molecules irradiated with the electron beam can be selectively desorbed.
［実施例］
以下に、本発明の実施例について図面を参照して説明す
る。[Examples] Examples of the present invention will be described below with reference to the drawings.
第２図は本発明の方法に用いる装置の一例を示す構成図
である。本装置は電子ビーム照射系２０９、試料室２０
７、オージェ分析器２１２および吸着ガス材料収納室２
０１とから主として構成されている。FIG. 2 is a block diagram showing an example of an apparatus used in the method of the present invention. This device includes an electron beam irradiation system 209, a sample chamber 20
7. Auger analyzer 212 and adsorbed gas material storage chamber 2
It is mainly composed of 01.
電子ビーム照射系２０９では電子ビームガン２１０より
発した電子ビーム２１１が集束レンズ２０８で集束され
て、試料室２０７内の試料台２０５上に設置された基板
２０Ｇに照射される。In the electron beam irradiation system 209, an electron beam 211 emitted from an electron beam gun 210 is focused by a focusing lens 208, and is irradiated onto a substrate 20G placed on a sample stage 205 in a sample chamber 207.
一方、吸着ガス材料収納室２０１に収納されている吸着
材料２０２は真空排気されることによりガス化して配管
２０３を通り、マスフローコントローラ２０４を介して
試料室２０７に導入される。基板２０６上には試料表面
から放出されるオージェ電子を検出するオージェ分析器
２１２が配設されている。On the other hand, the adsorbent material 202 stored in the adsorbent gas material storage chamber 201 is gasified by being evacuated, passes through the pipe 203 , and is introduced into the sample chamber 207 via the mass flow controller 204 . An Auger analyzer 212 is disposed on the substrate 206 to detect Auger electrons emitted from the sample surface.
本実施例においては、上記のように構成されたパターン
形成装置を用い、塩素（Ｃｇ）を構成元素として含むジ
クロルシラン（ＳｉＨ２Ｃ，ＩＪ２）を吸着材料２０２
として用い、集束した電子ビーム２１１によりＧｅ基板
２０６上の０１２分子を脱離させた。吸着材料としてＳ
ｉ Ｈ２’ＣＮ ２ ２０２を吸着ガス材料収納室２
０１に入れ、Ｇｅ基板２０６を試料台２０５に設置した
。試料Ｗ ２０７を１Ｏ−１０Ｔｏｒｒ程度以上の高真
空に排気した。吸着材料で必る５ｉＨ２Ｃρ２２０２は
大気中では液体でおるが、真空にひくことにより、容易
にガス化する。このＳ！ｌ−１２０，ｌ！２は、配管２
０３を通り、マスフローコントローラ２０４により流量
制御され、試料室２０７内へ導入される。試料室２０７
に供給された５ｉＨ２ＣΩ２ガスは試料で必るＧｅ基板
２０６に接し、Ｇｅ基板２０６上に５ＩＨ２Ｃｆ１２分
子よりなる吸着層を形成する。一方、電子ビームガン２
１０より発した電子ビーム２１１を集束レンズ２０８で
集束してＧｅ基板２０６上の所望の部分に照射すること
により、（３ｅ基板２０６の表面上に吸着されたＣｆｌ
を脱離することができる。第３図は、電子ビーム照射に
よるＣＪＩの選択脱離の実験結果を示している。第３図
（ａ）は、Ｇｅ基板２０６上に吸着したＳ ｉ Ｈ２Ｏ
Ｎ ２吸着層のオージェスペクトルを示す。ここで、Ｃ
ｇのオージェ信号が検出されている。第３図（ｂ）は第
３図（ａ）と同一点を電子ビームで１２分照射した後の
オージェスペクトルを示している。ここでＣｇのオージ
ェピークは見られず、ＣＦ２分子か電子ビーム照射によ
り脱離したことを示している。第３図（Ｃ）は、さらに
、電子ビーム照射位置を第３図（ａ）、 （ｂ）の照射
点より０、５ｍｍ離れた位置のオージェスペクトルを示
している。第３図（ａ）と同様にＣ９オージェピークが
検出されている。以上のことから、電子ビーム照射によ
るＣρ吸着層の選択脱離か可能でおることが示された。In this example, using the pattern forming apparatus configured as described above, dichlorosilane (SiH2C, IJ2) containing chlorine (Cg) as a constituent element was used as the adsorbent material 202.
The 012 molecules on the Ge substrate 206 were desorbed by the focused electron beam 211. S as an adsorption material
i H2'CN 2 202 adsorbed gas material storage chamber 2
01, and the Ge substrate 206 was placed on the sample stage 205. Sample W 207 was evacuated to a high vacuum of approximately 10-10 Torr or higher. 5iH2Cρ2202, which is necessary as an adsorption material, remains in a liquid state in the atmosphere, but is easily gasified by applying a vacuum. This S! l-120, l! 2 is piping 2
03, the flow rate is controlled by the mass flow controller 204, and the sample is introduced into the sample chamber 207. Sample room 207
The 5iH2CΩ2 gas supplied to the sample comes into contact with the Ge substrate 206, which is a sample, and forms an adsorption layer of 5IH2Cf12 molecules on the Ge substrate 206. On the other hand, electron beam gun 2
By focusing the electron beam 211 emitted from the Ge substrate 206 by the focusing lens 208 and irradiating it onto a desired part of the Ge substrate 206, (Cfl adsorbed on the surface of the Ge substrate 206)
can be detached. FIG. 3 shows the experimental results of selective desorption of CJI by electron beam irradiation. FIG. 3(a) shows Si H2O adsorbed on the Ge substrate 206.
Fig. 3 shows the Auger spectrum of the N2 adsorption layer. Here, C
An Auger signal of g is detected. FIG. 3(b) shows an Auger spectrum after irradiating the same point with an electron beam for 12 minutes as in FIG. 3(a). Here, no Auger peak of Cg was observed, indicating that CF2 molecules were desorbed by electron beam irradiation. FIG. 3(C) further shows the Auger spectrum at a position where the electron beam irradiation position is 0.5 mm away from the irradiation point in FIGS. 3(a) and 3(b). Similar to FIG. 3(a), a C9 Auger peak is detected. From the above, it was shown that selective desorption of the Cρ adsorption layer by electron beam irradiation is possible.
第４図はＣｇの電子ビームの照ｑ４選択脱離の様子をＣ
，Ｑのオージェピークを測定することによりｉｎ ５ｉ
ｔｕに観測したものであり、約７分の電子ビーム照射で
完全脱離していることかわかる。Figure 4 shows the selective desorption of q4 by the electron beam of Cg.
, Q in 5i by measuring the Auger peaks of
tu, and it can be seen that it was completely desorbed after about 7 minutes of electron beam irradiation.
本実施例では以上のようにして０，１珈の超微細パター
ンを形成することができた。また、本実施例では吸着ガ
スとして、Ｃｌ３を含むＳ ｉ Ｈ２Ｃρ２を雰囲気ガ
スとして用いたが、このほかＣ，［！ ２ 、Ｆ２ 、
Ｂｒ２などのハロゲンガスを用いてもよい。In this example, an ultra-fine pattern of 0.1 C was able to be formed in the manner described above. Furthermore, in this example, S i H2Cρ2 containing Cl3 was used as the atmospheric gas as the adsorption gas, but in addition to this, C, [! 2, F2,
A halogen gas such as Br2 may also be used.
［発明の効果］
以上説明した様に、本発明によれば、電子ビーム照射に
よって基板上の吸着分子層を容易に選択脱離させること
ができ、ざらに、吸着層の脱離の様子をｉｎ ５ｉｔｕ
に観察できるので、容易に吸着層の高精度な超微細パタ
ーン形成が可能となる効果を有するものである。[Effects of the Invention] As explained above, according to the present invention, the adsorbed molecule layer on the substrate can be easily selectively desorbed by electron beam irradiation, and the desorption state of the adsorbed layer can be observed in detail. 5itu
This has the effect of making it possible to easily form highly accurate ultra-fine patterns on the adsorption layer.
第１図は本発明の方法に用いる電子ビーム脱離の原理を
説明するための基板の模式的断面図、第２図は本発明の
方法に使用する電子ビーム選択脱離装置の一例を示す構
成図、第３図は雰囲気ガスとして５ｉＨ２Ｃ，ｌｌｚを
用い、Ｇｅ基板上に吸着したＣ、ｉ！の電子ビーム選択
脱離をオージェ分析により示した図、第４図はＣ，Ｉ２
の電子ビーム脱離をｉｎ ５ｉｔｕにオージェ分析によ
り観察した時の電子ビーム照射時間とオージェ信号強度
との関係を示す図である。
１１・・・吸着分子 １２・・・基板１３・・・
脱離分子 ２０１・・・吸着カス材料収納室２０２
・・・吸着材ｎ２０３・・・配管２０４・・・マスフロ
ーコントローラ
２０５・・・試料台 ２０６・・・基板２０７・
・・試料室 ２０８・・・集束レンズ２０９・・
・電子ビーム照射系
２１０・・・電子ビームガン
２１１・・・電子ビーム ２１２・・・オージェ分析
器代理人弁理士 舘 野 千惠子
電子ビづ、
第１図
電子工１ｊしＮ“−（ｅＶ）
第３図FIG. 1 is a schematic cross-sectional view of a substrate for explaining the principle of electron beam desorption used in the method of the present invention, and FIG. 2 is a configuration showing an example of an electron beam selective desorption device used in the method of the present invention. Figure 3 shows C, i! adsorbed on the Ge substrate using 5iH2C,llz as the atmospheric gas. A diagram showing the electron beam selective desorption of by Auger analysis, Figure 4 is C, I2
FIG. 3 is a diagram showing the relationship between electron beam irradiation time and Auger signal intensity when electron beam desorption of a sample is observed in 5 in situ by Auger analysis. 11... Adsorbed molecules 12... Substrate 13...
Detachable molecule 201... adsorption scum material storage chamber 202
...Adsorbent n203...Piping 204...Mass flow controller 205...Sample stage 206...Substrate 207...
...Sample chamber 208...Focusing lens 209...
・Electron beam irradiation system 210...Electron beam gun 211...Electron beam 212...Auger analyzer Patent attorney Chieko TatenoElectronic equipment Figure 1Electronic equipment 1jN"-(eV) 3rd figure
Claims (1)
板上に吸着物質よりなる吸着層を形成する工程と、この
吸着層の所望の部分に電子ビームを照射して前記吸着物
質を脱離させると共に、オージエ分析により前記吸着層
を分析しつつ前記吸着層に所望のパターンを形成させる
工程とを有することを特徴とする電子ビーム脱離による
吸着層の超微細パターン形成方法。(1) A step of supplying a substance to be adsorbed onto a substrate to form an adsorption layer made of the adsorbed substance on the substrate, and irradiating a desired portion of this adsorption layer with an electron beam to remove the adsorbed substance. A method for forming an ultra-fine pattern on an adsorption layer by electron beam desorption, comprising the steps of separating the adsorption layer and forming a desired pattern on the adsorption layer while analyzing the adsorption layer by Auger analysis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2965487A JPS63198327A (en) | 1987-02-13 | 1987-02-13 | Forming method for ultrafine pattern of adsorption layer due to electron beam separation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2965487A JPS63198327A (en) | 1987-02-13 | 1987-02-13 | Forming method for ultrafine pattern of adsorption layer due to electron beam separation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63198327A true JPS63198327A (en) | 1988-08-17 |
Family
ID=12282096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2965487A Pending JPS63198327A (en) | 1987-02-13 | 1987-02-13 | Forming method for ultrafine pattern of adsorption layer due to electron beam separation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63198327A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137313A (en) * | 1988-11-18 | 1990-05-25 | Res Dev Corp Of Japan | Method for forming pattern on silicon solid surface |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54109773A (en) * | 1978-02-17 | 1979-08-28 | Fujitsu Ltd | Test method for semiconductor device |
| JPS56157026A (en) * | 1980-05-08 | 1981-12-04 | Nippon Telegr & Teleph Corp <Ntt> | Formation of pattern |
| JPS61183922A (en) * | 1985-02-12 | 1986-08-16 | Nec Corp | Formation of thin film |
-
1987
- 1987-02-13 JP JP2965487A patent/JPS63198327A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54109773A (en) * | 1978-02-17 | 1979-08-28 | Fujitsu Ltd | Test method for semiconductor device |
| JPS56157026A (en) * | 1980-05-08 | 1981-12-04 | Nippon Telegr & Teleph Corp <Ntt> | Formation of pattern |
| JPS61183922A (en) * | 1985-02-12 | 1986-08-16 | Nec Corp | Formation of thin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137313A (en) * | 1988-11-18 | 1990-05-25 | Res Dev Corp Of Japan | Method for forming pattern on silicon solid surface |
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