JPS5255865A - Gas etching method of stain film - Google Patents

Gas etching method of stain film

Info

Publication number
JPS5255865A
JPS5255865A JP13136775A JP13136775A JPS5255865A JP S5255865 A JPS5255865 A JP S5255865A JP 13136775 A JP13136775 A JP 13136775A JP 13136775 A JP13136775 A JP 13136775A JP S5255865 A JPS5255865 A JP S5255865A
Authority
JP
Japan
Prior art keywords
stain film
etching method
gas etching
gas
stain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13136775A
Other languages
Japanese (ja)
Inventor
Haruo Okano
Yasuhiro Horiike
Yoshio Tabei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13136775A priority Critical patent/JPS5255865A/en
Publication of JPS5255865A publication Critical patent/JPS5255865A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make possible the removal of stain film which was extremely difficult to remove, by subjecting the stain film formed on the surface of a semiconductor wafer to gas etching by using the gas obtained through dissociation of gas containing fluorine.
COPYRIGHT: (C)1977,JPO&Japio
JP13136775A 1975-11-04 1975-11-04 Gas etching method of stain film Pending JPS5255865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13136775A JPS5255865A (en) 1975-11-04 1975-11-04 Gas etching method of stain film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13136775A JPS5255865A (en) 1975-11-04 1975-11-04 Gas etching method of stain film

Publications (1)

Publication Number Publication Date
JPS5255865A true JPS5255865A (en) 1977-05-07

Family

ID=15056258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13136775A Pending JPS5255865A (en) 1975-11-04 1975-11-04 Gas etching method of stain film

Country Status (1)

Country Link
JP (1) JPS5255865A (en)

Similar Documents

Publication Publication Date Title
JPS5253668A (en) Production of semiconductor device
JPS5248468A (en) Process for production of semiconductor device
JPS5255865A (en) Gas etching method of stain film
JPS51136289A (en) Semi-conductor producing
JPS53114742A (en) Plasma ashing method
JPS5242365A (en) Tool for semiconductors
JPS5343473A (en) Impurity driving-in method
JPS5373075A (en) Treatment method for wafer surface
JPS53140974A (en) Semiconductor surface treating method
JPS5368070A (en) Etching method
JPS5235196A (en) Method for recovery of hydrogen fluoride
JPS542670A (en) Plasma etching method
JPS5213778A (en) Plasma-etching method
JPS5339855A (en) Production of semiconductor device
JPS52140275A (en) Processing method for semiconductor wafer
JPS51140484A (en) Method of etching wafer
JPS51124379A (en) Plasma etching method
JPS5227368A (en) Selection etching method
JPS5396673A (en) Gas plasma etching method for sio2 film
JPS538082A (en) Production of semiconductor device
JPS522175A (en) Etching process
JPS5242375A (en) Process for production of semiconductor device
JPS51118369A (en) Manufacturing process for simiconduator unit
JPS51113571A (en) Precision processing method of semi-conductor
JPS5246775A (en) Method of forming photo mask