TW444253B - Semiconductor device and method of producing the same - Google Patents

Semiconductor device and method of producing the same Download PDF

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Publication number
TW444253B
TW444253B TW089103976A TW89103976A TW444253B TW 444253 B TW444253 B TW 444253B TW 089103976 A TW089103976 A TW 089103976A TW 89103976 A TW89103976 A TW 89103976A TW 444253 B TW444253 B TW 444253B
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metal film
semiconductor element
semiconductor device
patent application
electrode pad
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TW089103976A
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Yutaka Makino
Toshiharu Egami
Eiji Watanabe
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Fujitsu Ltd
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Description

A7 -4442 5〇 __—____B7__ 五、發明說明（1 ) 發明背景 1.發明領域 本發明一般係有關半導體元件，且更特別而言，係有 關提供形成於電極墊上之耐用金屬膜之半導體元件。本發 明亦係有關一種製備此一半導體元件之方法。 2·相關技藝之描述 傳統上’半導體元件具有形成於電極墊上之稱為障壁 金屬層之金屬膜。此一障壁金屬層可藉由非電金屬電鍵形 成。例如，第1A圖係包含傳統半導體元件之障壁金屬層 之零件之放大圖。半導體元件1〇〇具有電極墊1〇3，其係位 於主要由石夕製得之晶片101上。障壁金屬層1〇5被配置於電 極墊103上。作為保護膜之鈍性膜106被進一步配置於其間 障壁金屬層105未存在之區域。 如第1A圖所示障壁金屬層1〇5之周圍端部1〇5A係與鈍 性膜106接觸。在此’周圍端部i〇5A具有實質上相同於鈍 性膜106之厚度。再者，障壁金屬層1〇5係完全平的。 第1B圖係包含另一傳統半導體元件200之障壁金屬層 之零件之放大圖。於第1B圖中，與第1A圖中相同之組件 係以相同參考號表示。第1B圖之障壁金屬層係些微比第1A 圖之障壁金屬層厚。因此，半導體元件200不同於半導體 元件100者在於些微較厚之障壁金屬層115及其周圍端部 115A。於第1B圖中，周圍端部115A覆蓋鈍性膜1〇6之端部 。但是，障壁金屬層115之其餘部份具有均一厚度及全部 平的形狀。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) -~4Γ — — — — — — — — — — — — —*. — — — — — — — ^-01 - ！ T (請先閱讀背面之注意事項再填寫本頁> 經濟部智慧財產局員工消費合作社印製 A7 _ B7___ 五、發明說明（2 ) 半導體元件1 00及200皆具有位於個別之障壁金屬層 10：)及U 5上之焊料塊1 〇7，其係用以附接至外部電極。 (請先閱讀背面之注意事項再填寫本頁) 如上所述，半導體元件1 〇〇及2〇〇係經由焊料塊附接至 外部電極。傳統之焊料塊係主要由鉛製得。但是，最近幾 年 '主要由錫製得之焊料塊係環境考量之較佳者。 但是，當由錫(作為主要組份）及銀製得之焊料塊被使 用時，與焊料塊107接觸之周圍端部105八及115八之強度減 低，藉此，造成不完全之結合。因為此不完全之結合，其 具有使電極墊103及焊料塊107彼此接觸而使障壁金屬層 105之作用無效之危險性。再者，另一問題係焊料塊1〇7及 障壁金屬層105會與電極墊103分開。 發明综述 本發明之一般目的係提供一種其間除去上述缺點之半 導體元件。 本發明之更特別目的係提供一種具有形成於電極墊上 之高電阻金屬膜之半導體元件，及製備此一半導體元件之 方法。 經濟部智慧时產局員工消費合作社印製 上述問題之原因尚未被詳細瞭解。但是，其被假設構 成焊料塊之金屬元素之消化及擴散較佳係於金屬膜之周圍 端部處進行。本發明之發明人已研究解決上述問題，且已 發現金屬膜應具有某些形狀以降低問題之產生。 本發明目的係藉由包含下述者之半導體元件達成：電 極墊：形成於該電極墊上之金屬膜；於其中金屬膜不存在 之區域内形成之保護膜：及配置於該金屬膜上之塊。金屬 i、綠關家解（CNS如規格C 29: Μ 經濟部智慧財產局員工消費合作社印製 4442 5 3 五、發明說明（ 膜係於與保護㈣觸之其周圍端部處具有較大厚度。 藉由本發明人所作之密集研究之結果，發現即使辉料 塊含有” m及擴散性質之組份，與保護膜接觸之金屬 膜之較厚端部可改良金屬膜之耐用性。於本發明之半 導體元件t，金屬膜之腳料係比金屬膜之平坦部份厚 。當使半導體經由焊料塊結合至外部端子時，周g端部可 假定分散可擴散之元素，藉此，改良金屬膜之耐用性。 金屬膜之周圍端部可為比金屬膜之平坦部份厚13至2 倍。 本發明半導體元件之金屬膜可為覆蓋保護膜之内周圍 端部之周圍端部。 本發明目的亦係藉由半含下述步驟之半導體元件製備 方法達成.以包含氨基乙酸及具有作為核之金屬元素之化 合物之螯合溶液活化電極表面，及藉由非電金屬電鍍形成 金屬膜。 藉由活化電極墊表面，金屬元素被沈澱於電極墊之表 面上’其係適於金屬電鍵之條件.然後’非電金屬電鑛被 施行於電墊之表面上以成具有作為核之金屬元素之金屬膜 。與保護膜接觸之金屬膜之周圍端部係比金屬骐之中央部 份厚。 本發明之上述及其它目的及特徵由下述之結合附圖之 描述而變得更明顯。 圖示簡要說明 第1A圖係包含習知技藝之半導體元件之障壁金屬層 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）
A7 B7 校濟部智慧財產局員工消費合作社印製 五、發明說明（ 之零件之放大圖； 第1B圖係包含習知技藝之另一半導體元件之障壁金 屬層之零件之放大圖； 第2A圖係本發明之一實施例之半導體元件之零件之 放大圖； 第2B圖係本發明之另一實施例之半導體元件之零件 之放大圖； 第3圖係顯示製備本發明半導體元件時之於電極墊上 形成金屬膜之方法之流程圖； 第4圖係顯示活化用於本發明半導體元件之溶液之範 例； 第5圖係顯示用於本發明半導體元件之鎳電鍍溶液之 例子； 第6圖顯示藉由電鍍形成於電極表面上之AlJ層； 第7圖顯示習知技藝之半導體元件與本發明半導體元 件之間之移除電阻之比較測試之結果；且 第8圖係顯示經由焊料塊固定至基材之本發明半導體 元件。 例之描述 下述係參考附圖之本發明實施例之描述。 第2A圖係包含本發明之一實施例之半導體元件之金 屬膜之零件之放大圖。第2B圖係包含本發明另一實施例 〜半導體元件之較厚金屬膜之零件之放大圖。 如第2A圖所示，半導體元件1具有墊13 .其係形成於 园®家標準（〇3)Α4規格（21〇 X 297公釐 -------------裝-------1訂---------線 (請先閱讀背面之注意事項再填寫本頁> 4442 53 a7 B7
經濟部智慧財產局員工消費合作杜印製 Α7 Β7 五、發明說明（6 ) 周圍端部15八及25厶。當此發生時，厚的周圍端部15A及25八 造成錫擴散於其内側，藉此，保持結合狀態。因此，習知 技藝之不完全連接及焊料塊及障壁金屬層與電極墊分離之 問題可被有效避免。 第3圖係於電極墊13上形成作為金屬膜之障壁金屬層 Ί 5之方法之流程圖。 於此流程圖中，此方法係對半導體元件1完成之，其 係具有位於晶片10上之由鋁製得之電極墊13及於電極墊13 外側形成之鈍性膜6。於步驟S10中’蝕刻係於半導體元 件1之鋁電極墊13上施行。更特別者，半導體元件丨係被 浸潰於500毫升/公升之70°C硫酸溶液内。 於步驟S20中’半導體元件1係被完全清洗。 於步驟S30中’半導體元件1之電極墊丨3之表面係被 活化。此係藉由非電金屬電鍍獲得具有較厚周圍端部之障 壁金屬層15之下述步驟之製備步驟。於此所用之活化溶液 係顯示於第4圖。 第4圖所示之活化溶液係含有〇·6毫莫耳/公升之氣化 鈀及0.1莫耳/么、升氨基乙酸之螯合溶液。鈀係作為使胺基 配位。於第4圖中，用於製備第ία圖及…圖之傳統半導體 元件之活化〉谷液亦被顯示以供參考。習知技藝之活化溶液 含有氨，而本發明之活化溶液含有氨基乙酸。 溶液内之氦基乙酸可限制纪之均勻沈殿，如此，紀可 被避免自溶液均勻沈澱=氨基乙酸用以使大量鈀沈澱於紹 電極之周圍端部上及適當量之鈀於其餘區域内， .各纸張乂度適用中國國家標準（CNS)A4規格（21C * 297公餐：> 9 ---------- I —裝--------訂-------1·線 (請先閱讀背面之注意事項再填寫本頁)
五、發明說明（7 ) 於步驟S40中，半導體元件i被完全清洗β ί請先閲讀背面之注意事項再填寫本頁) 於步驟S50中’非電金屬電錢於鋁電極墊丨3之表面上 施行以形成金屬膜。於此，非電金屬電鍍可為，例如，非 電錄電鍍》用於鎳電鍍之鎳電鍍溶液係如第5圈所示β於 步驟S50中’鋁電極墊13之表面被浸潰於鎳電鍵溶液約3 分鐘。具有約1mm厚度之鎳金屬膜因而均勻形成於鋁電極 塾】3之表面上’但周圍端部〖5A具有約2μιη之厚度。 周圍端部15Α比障壁金屬層15之其餘部份厚，因為於 活化步驟中大量之鈀被沈澱於鋁電極墊13之周圍端部上。 鎮以作為核之鈀沈澱而形成金屬膜。因此，障壁金屬層15( 其係鎳膜）於周圍端部上具有較大之厚度a 於步驟S60中’半導體元件1再次被完全清洗。於步 驟S70中’半導體元件1被乾燥，且形成障壁金屬層】5之 方法被結束。 經濟部智慧財產局員工消費合作社印製 需瞭解第2A圖所示之半導體元件1之障壁金屬層15係 於第3圖之流程圖中形成。於具有障壁金屬層25(其係比障 壁金屬層15厚）之半導體元件2之情況中，鋁電極墊13於錄 電鍍溶液内之浸潰時間需約6分鐘以於步驟S50内於鋁電 極墊13之表面上均勻形成具有約2μιη厚度之鎳金屬膜。在 此’周圍端部25Α覆蓋具有約3μιη厚度之鈍性膜16之内周 圍端部。 焊料塊1 7被配置於個別半導體元件1或2之障壁金屬層 15或25。焊料塊17可為97:3(Sn:Ag)比例之錫及銀製得之 焊料塊。於被置於障壁金屬層1 5或25上之後，焊料塊於270 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 五、發明說明（8) A7 B7_______ t加熱。結果，焊料塊熔融且附著至障壁金屬層。或h之 整個表面上。 需瞭解焊料境無需事先被置於障壁金屬層上…其可 個別製得焊料塊錢半導體元件被結合至外部電極時使焊 料塊附接至障壁金屬層。於此情況中，半導體元件具有抗 氧化膜’諸如，金電錢金屬帛，其係置於具有較厚周圍端 部之障壁金屬層上。如第6圖所示，例如，域18可藉由 電鑛形成於障壁金屬層15之表面上。 第7圖顯示習知技藝之半導體元件與本發明之半導體 元件之間之障壁金屬層移除電阻之比較測試^試條件亦 係如苐7表所示。 第1B圖所不之半導體元件2〇〇被作為習知技藝之半導 體7L件，且第2B圖所示之半導體元件2被作為本發明之半 導體元件。因此，形成於電極墊上之每一障壁金屬層之中 間部份厚度係2μπι。本發明之半導體元件每—者係具有厚 度約3 μηι之周圍端部。 含有97:3之比例之Sn及Ag之焊料塊被固定至每_障 壁金屬層，且於第7圖所示條件下接受加熱處理最高達5分 麵 L針於每一半導體元件表面上1 Ομηι以3 Ο μηι/秒越動以 施以剪切力至焊料塊之側表面。 如第7圖所示，30%之習知技藝之半導體元件使個別 之鋁電極墊與障壁金屬層脫離。另一方面，無脫附或剝落 產生於本發明之半導體元件上’至第目次加熱處理。但是 ’於第五次熱處理中60%之半導體元件產生脫附。 +ί、紙張適用中固國家標準（CNS)A4規格（210 X 297么、餐 -------------^---------^ <請先閱讀背面之注意事項再填寫本頁) 經濟部智^財產局員工消費合作社印說 !1 4442 53 A7 --------- B7___ 五、發明說明（9 ) 由此等結果可看出’電極與障壁金屬層間之結合於本 發月令係比$知技藝強。因此’本發明之半導體元件具有 較高之耐用性。 〃 第8圖顯示經由焊料塊整體固定至基材之本發明半導 一件於此圖中’浮片半導體元件3經由辉料塊3 7固定 至基材4。 本發明並非限制於特定揭露之實施例，各種變化及改 良可在未偏離本發明範圍下為之。 本發明係以曰本優先申請案n-189280號案〇999年7 月2曰申請）為主’其全部内容在此被併入以供參考。 I ^--— — — — —--I I • · - <靖先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 12 本紙張又度適用中國國家標準（CNS>A4規格（210 X 297公S ) A7 B7 五、發明說明（1Q) 卜"半導體元件 2…半導體元件 3…浮片半導體元件 4…基材 6…純性膜 10…晶片 13···電極墊 i5…障壁金屬層 15A…周圍端部 1 6…純性膜 17…焊料塊 18…鋁膜 元件符號對照 25···障壁金屬層 25A…周圍端部 3 7…焊料塊 100…半導體元件 101…晶片 103…電極墊 105…障壁金屬層 10 5 A…周圍端部 10 6…鈍性膜 107…焊料塊 115···障壁金屬層 200…半導體元件 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 13 本纸張K度適用中國國家標準（CNSKM規格（210 X 297么、釐）

Claims (1)

  1. 4442 53 A8 B8 CS ____D8六、申請專利範圍 1· 一種半導體元件，包含： 晶片： 電極#，其係形成於該晶片上； 金屬膜圖案’其係形成於該電極墊上；及 塊狀物’其係置於該金屬膜圖案上， 其中該金屬膜圊案於其周圍端部具有更大之厚度 〇 2.如申請專利範圍第丨項之半導體元件’其進一步包含保 護層，其係形成於其間該金屬膜圖案不存在之區域内 經濟部智总財4^員工消費合作社印製 3 ·如申請專利範圍第丨項之半導體元件 主要由錫製成之焊料塊。 4·如申請專利範圍第3項之半導體元件 案係由鎳製成。 5. 如申請專利範圍第1項之半導體元件 膜圖案係以抗氧化之導電膜覆蓋。 6. —種半導體元件，其包含： 晶片； 電極墊’其係形成於該晶片上； 金屬膜，其係形成於該電極塾上；及 抗氧化之導電獏，其係置於該金屬骐上， 其中該金屬膜圖案於其周圍端部具有更大之厚声 ύ 其中該塊狀物係 其中該金屬膜 圖 其中至少該金屬 -----------y------IT------0 {請先閲讀背'面之注*-事項再填寫本頁) 7. -種製備半導體元件之方法，其包含之步驟係： 本紙張尺度適用中萄國家標準（CNS ) Α4規格（2】〇χ297公釐 A8 B8 C8 D8 六、申請專利範圍 乂 3有包含作為核之金屬元素之化合物及氛基乙 酸之螯合溶液活性電極塾之表面；及 藉由非電金屬電錢於該電極塾表面上形成金屬膜 C 8. 如申請專利範圍第7項之方法，其中： 該化合物係氣化鈀；且 忒非電金屬電鍍使用含有鎳之電鍍溶液。 9. 一種半導體元件，其包含： 曰 μ · 日日j 電極塾，其係形成於該晶月上： 金屬膜’其係形成於該電極墊上； 保蠖層，其係形成於其中該金屬膜不存在之區域 内；及 焊料塊’其用以使該金屬膜結合至基材層， 其中該金屬膜圖案於與該保護層接觸之其周圍端 部具有更大之厚度。 ---------装------1T------線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智总3?4局貧工消費合作社印製 15 本紙張尺度逋用中國國家標率（CNS ) A4規格ί 2丨0X297公釐
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