TW486800B - Semiconductor device and method of producing the same, lead frame and method of producing the same - Google Patents

Abstract

A semiconductor device includes a radiator plate made of Cu or a Cu-alloy and having a surface provided with a black oxidation process layer, a chip fixed at a predetermined position on the radiator plate, a plurality of internal terminals provided on the radiator plate and electrically connected to the chip, an encapsulating resin encapsulating the radiator plate, the chip and the internal terminals, and a Cu2O layer provided between the surface of the radiator plate and the black oxidation process layer.

Description

486800

V. Description of the invention (1) Background of the invention The present application seeks the benefit of Japanese Patent Application No. 2_-01515108, which was filed in the Japanese Patent Office on January 24, 2000, and its disclosure The contents are incorporated herein by reference. 1. Field of the Invention The present invention generally relates to a semiconductor element and a manufacturing method thereof, a lead frame and a manufacturing method thereof, and more particularly relates to a semiconductor element having a lead frame made of copper (Cu) and being encapsulated by a resin, and manufacturing the same The method of a semiconductor-like element 'is more particularly related to a lead frame made of Cu and a method of manufacturing such a lead frame. In the resin-encapsulated semiconductor device, there is an increased demand for a lower thermal resistance of the resin package due to the improved performance of a resin-encapsulated 1C wafer. In addition, when an IC package is mounted using lead-free solder, there is a demand for improvement in thermal impedance relative to an increased reflow time at the time of mounting. Therefore, various semiconductor devices have been manufactured using lead frames made of Cu having satisfactory heat release characteristics. (Please read the precautions on the back before filling out this page) Order --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 2. Related technical descriptions 1C using lead frames made by Cii The package or 1C package with a Cu radiator plate on the rear surface of the wafer for the purpose of improving the heat release from the 1C wafer. Whisker crystals made of copper oxide (CuO) are individually The base material is formed on the surface so as to improve the size of the paper. Applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm). 4 Intellectual Property Bureau of the Ministry of Economic Affairs-Employee Consumption Cooperative printed 486800 A7 ____K; __ V. Invention Note (2) Adhesion to the encapsulating resin of the lead frame and the radiator plate. The whisker-like crystal layer is formed on the surface of the radiator plate, for example, by subjecting the radiator plate to an impregnation procedure in an alkaline solution tube. This immersion process is generally referred to as black oxidation treatment. Because the surfaces of the lead frame and the radiation plate are crystalline, these base materials such as the lead frame and the radiation plate are adhered to the encapsulating resin. However, the present inventors have newly discovered that the following problems occur when heat is applied to the package after the encapsulating resin t is formed. Figures 1A to 1D are cross-sectional views illustrating the newly discovered problems. First, as shown in FIG. 1A, the surface of the lead frame 21 made of Cu is subjected to an impregnation procedure in an alkaline solution tube so as to form a whisker crystal formed on the surface of the lead frame 21. The black oxidation treatment layer 22. Next, as shown in FIG. 1B, the lead frame 21 including a wafer is encapsulated with a resin, so that the encapsulating resin layer 25 is formed on the black oxidation-treated layer 22 of the lead frame 21. Thereafter, procedures such as curing the resin and forming the leads are performed to complete a 1C package. When the resin is cured, a reaction occurs between the black oxidation treatment layer 22 made of CuO and the lead frame 21 made of Cu, as shown in Fig. 2C. Therefore, a copper dioxide (CuO2) layer 26 is formed on the side of the black oxidation treatment layer 22 due to deoxidation, and a copper dioxide (CuO2) layer 27 is formed on the lead frame 21 due to oxidation. Formed on the side. Comparing the Cu02 layer 27 formed by oxidation, the Cu02 layer 26 formed by deoxidation is not dense and brittle. For this reason, the adhesiveness between the encapsulating resin 25 and the lead frame 21 is greatly reduced. This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) II · III l · --- ^ · 11111111 (Please read the precautions on the back before filling out this page) 486800 5. Description of the invention (then The 1C package is mounted on a mounting substrate by performing a reflow soldering process, and the 1C package is therefore heated at a temperature in the range of 20 (rcs25 ° c> c). Especially when error-free solder is used, the solder The pour point is in the range of 220 ° C to 240t: 'This range has a higher melting point than the traditional solder with a charm of 183t :. Traditionally, the reflow temperature of the reflow soldering process must be set higher than the purge point of the error-free solder. This #significantly applies thermal stress to the 1C package when performing the reflow soldering process. When the reflow soldering process is performed at a high temperature as described above, the encapsulated resin 25 and the lead frame 21 are peeled off with a layer 28 of 02 layers. Time is generated, as shown in Figure 2D. In this case, 'water vapor will enter in the gap between the 〇02 layer 26 and the lead frame 21, and when heat is applied during the installation of the work body, Water vapor will expand and cause cracks in 1 (: It is formed in a body. SUMMARY OF THE INVENTION Therefore, the general purpose of the present invention is to provide a novel and useful semi-conductive ship element and its manufacturing method 'lead frame and its manufacturing method, in which the above-mentioned problems are eliminated. Another and more obvious purpose is to provide a use-by-

Semiconductor component of a component made of Cu and subjected to black oxidation treatment, and a method of manufacturing the same, in which the adhesion between the Cu component and the encapsulating resin will not be reduced, even during manufacturing or semiconductor component mounting procedures When relatively high heat is applied. Yet another specific object of the present invention is to provide a lead frame made of Cu and a method for manufacturing the same, in which the adhesion between the Cu lead frame and the encapsulating resin is read first.

Written in this book Page I I I Order Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 486800 A7

Order I 486800 A7 V. Description of the invention (5) Satisfactory adhesion is maintained between the black oxidation treatment layer and the encapsulating resin, and cracks may be prevented from being generated in the semiconductor element. Still another object of the present invention is to provide a semiconductor device including: a lead frame; a wafer fixed at a predetermined position on a first surface of the lead frame; and a plurality of interiors electrically connected to the wafer Terminals;-a radiator plate provided on the second surface of the lead frame opposite to the first surface, where the radiator plate is made of an alloy and has a surface provided with a black oxide treatment layer; Encapsulating resin for the frame, the wafer and the internal terminals; and a 0 "layer provided between the surface of the radiator plate and the black oxidation treatment layer. According to the semiconductor element of the present invention, even when the radiator plate is heated during the manufacturing or installation process after being encapsulated by the resin, the CU20 layer on the radiator plate and the black can be avoided due to oxidation and deoxidation. Generation between oxidation treatment layers. In addition, a satisfactory adhesiveness is maintained between the black oxidation-treated layer and the encapsulating resin, and it is possible to prevent cracks from being generated in the semiconductor element. A further object of the present invention is to provide a method for manufacturing a semiconductor element, which includes the following steps: (a) forming a black oxidation treatment layer on one surface of a radiator plate made of Cu or a Cu alloy; (b) Heating the radiator plate to form a ChO layer by oxidation between the surface of the radiator plate and the black oxidation treatment layer; (c) fixing the wafer at a predetermined position on the radiator plate; (d) placing The plurality of internal terminals provided on the radiator plate are electrically connected to the wafer (via an insulator, not shown); and (e) the radiator plate, the wafer, and the internal terminals are encapsulated by a package tree. According to the method for manufacturing a semiconductor device according to the present invention, even after the radiator plate is encapsulated in a resin, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied at the paper size (please read the precautions on the back before filling in (This page): Install ---- ^ ---- Order ------! * 5 ^ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Δ 486800

When heated during the manufacturing or installation process, it is also possible to avoid the formation of Cu2O layer on the radiator plate and the black oxidation treatment layer due to oxidation and deoxidation. In addition _ satisfactory adhesion in the black oxidation treatment The layer and the encapsulating resin are maintained, and it is possible to prevent cracks from being generated in the semiconductor element. Another object of the present invention is to provide a method for manufacturing a semiconductor device, which comprises the following steps: (i) forming a black oxidation treatment layer on one surface of a lead frame made of an alloy of rhenium; (b) heating the lead frame to Black on the surface of the lead frame, oxidation treatment layer

Cu20 layer, (c) fixing the wafer at a predetermined position on the lead frame; 电气 electrically connecting the plurality of internal terminals to the wafer; and (^ encapsulating the lead frame and the wafer by a package And internal terminals. According to the method of manufacturing a semiconductor device of the present invention, even when the lead frame is heated during a manufacturing or mounting process after the resin is encapsulated, it is possible to prevent the ChO layer from being caused by oxidation and deoxidation. The generation between the lead frame and the black oxidation-treated layer. In addition, a satisfactory adhesion is maintained between the black oxidation-treated layer and the encapsulating resin, and it is possible to prevent cracks from being generated in the semiconductor element. Another object is to provide a lead frame including: a base material made of Cu or a Cu alloy and having a surface provided with a black oxidation treatment layer; and a substrate material provided on the surface of the base material and the black oxidation treatment layer. CuA layer. According to the lead frame of the present invention, when a lead frame is used in a semiconductor element and the lead frame is heated during a manufacturing or mounting process after resin encapsulation, Guan possible to avoid the oxidation of the standard sheet dimensions suitable for the present oxygen-scavenging action (CNS) A4 size (21G x 297 male hair)

I I I I --I (Please read the precautions on the back before filling out this page) Line ·. Printed by the Ministry of Economic Affairs Intellectual Property Employees Consumer Cooperatives 9

486800 V. Description of the invention (7) The ChO layer is generated between the lead frame and the black oxidation treatment layer. In addition, a satisfactory adhesiveness is maintained between the black oxidation-treated layer and the encapsulating resin, and it is possible to prevent cracks from being generated in the semiconductor element. A further object of the present invention is to provide a method for manufacturing a lead frame, which comprises the following steps: (a) forming a black oxidation treatment layer on a surface of a base material made of CU or Cii alloy; and (b) The base material is heated to form a Cu2O layer between the surface of the base material and the black oxidation treatment layer by oxidation. According to the method of manufacturing a lead frame of the present invention, it is possible to manufacture a lead frame suitable for use in a semiconductor. Even when the lead frame is heated during the manufacturing process or the installation process after the resin is encapsulated, the generation of the CU20 layer between the lead frame and the black oxide layer due to oxidation and deoxidation may be avoided. In addition, a satisfactory adhesiveness is maintained between the black oxidation-treated layer and the encapsulating resin, and it is possible to prevent cracks from being generated in the semiconductor element. Other objects and further features of the present invention will become apparent from the following detailed description when read in conjunction with the accompanying drawings. Brief description of the drawings Figures 1A to 1D are cross-sectional views illustrating the newly discovered problems; Figures 2A to 2D are cross-sectional views illustrating the operation principle of the present invention; Figures 3 A and 3B are respectively Shows the plan view and cross-sectional view of the first embodiment of the present invention; This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------ installation ---- -r I (Please read the notes on the back before filling out this page) Order ------------ Printed by the Intellectual Property Bureau of the Ministry of Economy Employee Consumer Cooperatives 10 486800 A7 B7 Printed by Employee Consumer Cooperative

V. Description of the Invention (8 Figures 4A and 4B are respectively a second embodiment and a cross-sectional view of the present invention; and Figures 5A and 5B are a plan view and a cross-sectional view respectively showing a third embodiment of the present invention. Detailed description of the preferred embodiment First, the operation principle of the present invention will be explained by referring to Figs. 28 to 20. Figs. 2A to 2D are cross-sectional views for explaining the operation principle of the present invention. In the 2D drawing, a lead frame 3 is made of copper (Cu) or a copper (Cu) alloy with a content of 90 wt ·% or more. FIG. 2A shows a black oxidation treatment layer 2 on the surface of a base material. It is formed on the surface, that is, one surface of the Cu lead frame 3. The black oxidation treatment layer 2 can be formed by immersing the lead frame 3 in an alkaline solution tube, which results in whisker-like crystals, that is, a Copper oxide (CuO) layer. The test solution tube used for black oxidation treatment uses a mixed solution of strong oxidants such as sodium gasification, sodium hydroxide, and potassium peroxodisulfate. Black oxidation treatment is at about 100 ° It is carried out for 3 to 10 minutes at C. Fig. 2B shows a red copper oxide (Cu2O) layer 4 on the lead frame 3. A surface is formed between the surface and a CuO black oxidation treatment layer formed on the surface of the lead frame 3. For example, the CujO layer 4 is in a range of 200 ° C to 300 ° in an oxidizing atmosphere such as an air atmosphere in an oven. The temperature of C is formed by heating the lead frame 3 with Cu0 layer 2 to two hours. In this case, Cu 〇 This paper size may be applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love)- ----------- Install ----- Γ --- Order -------- • Line (Please read the precautions on the back before filling this page) 11 486800 A7

The layer 4 is formed with a thickness of about 0.5 / zm. By forming the ChO layer 4, it is possible to avoid the ChO layer between the Cu lead 2 and the CuO black oxidation treatment layer 2 due to deoxidation when heat is applied during a manufacturing process or a women's wear process after resin encapsulation. Be formed. It can be considered because the combination of Cu and CuO, which prevents the generation of the ChO layer, and the oxidation and deoxidation of Cu and CuO when heat is applied in a state where no oxygen is supplied, does not cause Generates oxidation or deoxidation, even when heat is applied in a state where no oxygen is supplied. Therefore, it is possible to effectively prevent the encapsulation resin from peeling off the lead frame 3, especially due to brittle deoxidation The generation of the Cu20 layer is avoided. FIG. 2C shows that the lead frame 3 such as a wafer and a lead are mounted with various components forming a semiconductor element in a state where the lead frame 3 and various components are encapsulated with an encapsulating resin. Because the surface of the black oxidation-treated layer 2 has the form of whisker crystals, satisfactory adhesion between the encapsulation resin 5 and the black oxidation-treated layer 2 is realized. (Please read the precautions on the back before filling this page ) -Packing ----- r --- Order ---------- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the 2D picture shows that the encapsulation resin is cured at 175 ° C 6 to 10 Hour, after state 'and semiconductor The parts are installed by an infrared reflow process: mounted on a mounting substrate (not shown). When the encapsulating resin 5 is cured, the Cu2O layer is prevented from oxidizing by the action of the Cu2O layer described above. Deoxidation is generated between the lead frame 3 and the black oxidized layer 2. Especially because it avoids 4 mm due to brittleness. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 12

The Cu2Q layer formed by the effect can effectively prevent the encapsulating resin 5 from peeling off the lead frame 3 during the installation process using error-free solder. (Please read the precautions on the back before filling this page) P The temperature for the erbium-free solder was set at 2600c to 2700. . In this range, the temperature is considerably higher than that of ordinary lead solder. Therefore, it is possible to mount the semiconductor element on the mounting substrate in a state where satisfactory adhesion between the encapsulating resin 5 and the lead frame 3 is maintained by the black oxidation treatment layer 2. As a result, it is possible to prevent cracks from being formed in the IC package, and to prevent water vapor from entering the package through such cracks. Next, a first embodiment of the present invention will be described with reference to FIGS. 3A to 3B. Fig. 3A is a plan view showing a first embodiment of a lead frame according to the present invention, which is used in the first embodiment of the semiconductor element according to the present invention. Fig. 3B is a view showing the first embodiment of the semiconductor element. A cross-sectional view of an embodiment, that is, a 1C package having a lead frame mounted with an IC chip and encapsulated with an encapsulating resin. The semiconductor element of the first embodiment is manufactured by the semiconductor element according to the present invention A first embodiment of the method is manufactured, and the first embodiment is a lead frame printed by a consumer cooperative of the Intellectual Property Services Department of the Ministry of Economic Affairs by the first embodiment of the lead frame manufacturing method according to the present invention. The lead frame 30 shown in FIG. 3A is made of cu, and is processed into a predetermined shape by press forming or after-cutting. A radiator plate 34, which is a member irrelevant to the lead frame 30, is also made of Cu. system The radiator plate 34 is adhered to the internal terminals 36 of the lead frame 30 via a tape (not shown) coated with a thermosetting adhesive material. A pre-paper such as degreasing and light etching is performed on the surface of the radiator plate 34 The dimensions are in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 13 486800 A7 B7 V. Description of the invention (11) After the treatment procedure, the black oxidation treatment is performed on the pre-treated surface of the radiator plate 34. The radiator plate 34 is then cleaned and dried. As described above, the black emulsification treatment can be performed by immersing the radiator plate 34 in a test solution tube. Therefore, the CuO black composed of a whisker-like crystal layer An oxidation treatment layer is formed on the surface of the radiator plate 34. A Cu20 layer similar to that described above in conjunction with Figures 2A to 2D is formed between the radiator plate 34 and CuO on the surface of the radiator plate 34. It has a thickness of about 0.5 // m. Therefore, even if the radiator plate 34 is heated during the manufacturing process or the installation process after the resin is encapsulated, it is possible to avoid the Cu radiator plate 34 and the CuO black oxidation The Cu20 layer is generated between the treatments. A 1C wafer 31 is directly mounted on the surface of the radiator plate 34 and fixed on the black oxidation treatment layer by a silver (Ag) paste or the like. As shown in FIG. 3B It is shown that the electrode of the 1C chip 31 and the internal terminal 36 are electrically connected by a wire 32, and the internal terminal 36 extends outside the encapsulating resin to form a lead 35. In this embodiment, the lead frame 30 is made of Cu, and the 1C chip 31 is directly mounted on a radiator plate 34 made of Cu. For this reason, satisfactory heat release characteristics may be achieved for semiconductor elements. In addition, even after the resin is encapsulated during a manufacturing process or a mounting process When relatively high heat is applied, the Cu 2 0 layer formed between the surface of the radiator plate 34 and the CuO black oxidation treatment layer on the surface of the radiator plate 34 prevents the encapsulating resin 33 from peeling off from the radiator plate 34. In other words, satisfactory adhesion is maintained between the whisker crystal layer of the black oxidation-treated layer and the encapsulating resin. Therefore, this paper size can be applied to Chinese National Standard (CNS) A4 (210 X 297 mm)

Please read the notes on the back of the book first. 1

I I order Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 14 486800 Five # Printed by the Consumers' Cooperatives of the Intellectual Property of the Ministry of Economics Invention description (12) It can prevent cracks from being generated in the IC package. Next, a second embodiment of the present invention will be explained by referring to Figs. 4A and 4B. Fig. 4A is a plan view showing a second embodiment of the lead frame according to the present invention, which is used in the second embodiment of the semiconductor element according to the present invention. Fig. 4B is a cross-sectional view showing a second embodiment of the semiconductor element, that is, a 1C package having a lead frame mounted with an IC chip and encapsulated with an encapsulating resin. The semiconductor element of the second embodiment is manufactured by the second embodiment of the semiconductor element manufacturing method according to the present invention, and the lead frame of the second embodiment is by the second implementation of the lead frame manufacturing method according to the present invention. Example. The lead frame 40 shown in FIG. 4A is made of Cu. A CuO black oxidation treatment layer similar to that formed on the surface of the radiator plate 34 of the first embodiment is formed on the surface of the lead frame 40. However, a region to be connected to the lead 42 above the internal terminal 46 is shielded, so that a CuO black oxidation treatment layer is formed in this region. The shaded area is plated with Ag. Cu20 similar to that described above in connection with the first embodiment is formed with a thickness of about 0.5 jum between the lead frame 40 and the Cu black oxidation treatment layer on the surface of the lead frame 40. Therefore, even if the lead frame 40 is heated during the manufacturing process or the installation process after resin encapsulation, it is possible to avoid the generation of a Cu20 layer between the Cu lead frame 40 and the CuO black oxidation treatment due to oxidation and deoxidation. . A 1C wafer 41 is mounted on a wafer mounting area on the lead frame 40, and is fixed on the black oxidation treatment layer by a silver (Ag) paste or the like. For example, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^ ---------- ^ --------- line (please read the note on the back first) Please fill in this page again for details) 15 486800 V. Description of the invention (13 Printed in Figure 4B by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, K: W41 is electrically connected to the internal material electrode by wire 42 and the internal terminal 46 is in the package The sealing resin 43 extends outside to form a lead 45. In this embodiment, the lead frame 40 is made of Cu and is not provided with a radiator plate. Therefore, this embodiment is particularly suitable for use in semiconductor devices which are required The heat release characteristics are not as high as in the first embodiment described above. In addition, even when a relatively high heat is applied during the manufacturing process or the installation process after the resin is encapsulated, the surface of the lead frame 40 and the lead frame 4 The Cu2 layer formed between the CuO black oxidation treatment layer on the surface of 〇 will prevent the encapsulating resin 43 from peeling off the lead frame 40. In other words, satisfactory adhesion is achieved between the black oxide treatment layer and the whisker crystal layer. The encapsulation resin 43 is maintained between. Therefore, it is possible Crack-free is generated in the 1C package. Next, a third embodiment of the present invention will be described by referring to FIGS. 5A and 5B. FIG. 5A is a view showing a third embodiment of a semiconductor element according to the present invention. A plan view of a radiator plate. FIG. 5B is a cross-sectional view showing a third embodiment of a semiconductor element, that is, a 1C package having a radiator plate on which a 1 (: wafer is mounted and encapsulated with an encapsulating resin. The semiconductor element of the third embodiment is manufactured by the third embodiment of the semiconductor element manufacturing method according to the present invention. The lead frame used in the semiconductor element of the third embodiment is the same as above together with 4A and 4B. The second embodiment illustrated in the figure is the same. In this embodiment, the lead frame is made of Cu or an alloy containing 42 wt ·% Ni and 58 wt.% Fe. The radiator plate 54 is made of Cu And it is set on the rear surface of one of the lead frames in the chip mounting area. Similar to this paper size, the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

Please read the precautions on the back of the book and fill it in. IIIJ. Binding. Page III Order 16 486800 A7 B7 V. Description of the invention (14 The above-mentioned CuO black oxidation treatment layer is formed on the surface of the radiator plate 54 by the Ministry of Economic Affairs. Printed by the Intellectual Property Office Employee Consumer Cooperative

A Cu20 layer similar to that described above in connection with the first embodiment is formed with a thickness of about 0.5 // m between the radiator plate 54 and the black oxide treatment layer on the surface of the radiator plate 54. Therefore, even when the radiator plate 54 is heated during the manufacturing process or the installation process after the resin encapsulation, it is possible to avoid the oxidation treatment between the Cu radiator plate 54 and the copper oxide black due to oxidation and deoxidation. Generation of Cu20 layer. A 1C wafer 51 is mounted in a wafer mounting area on the lead frame, and is fixed by a silver (Ag) paste or the like. As shown in Fig. 58, the electrode of the redundant wafer 51 and the internal terminal 56 are electrically connected by a lead 52, and the internal terminal 56 extends outside the encapsulating resin 53 to form a lead 55. The surface of the radiator plate 54 is exposed from the encapsulating resin 53 as shown in Fig. 5B to further improve the heat release characteristics. In the present embodiment, the radiator plate 54 is made of Cu, and the radiator plate 54 is exposed. Therefore, this embodiment is particularly suitable for an application in which an external cooling unit is used to cool a semiconductor element. In addition, even when a relatively high heat is applied during the manufacturing process or the installation process after the resin encapsulation, a layer formed between the surface of the radiator plate 54 and the CuO black oxidation treatment layer on the surface of the radiator plate 54 is formed. The Cll20 layer prevents the encapsulating resin 53 from peeling off the radiator plate 54. In other words, satisfactory adhesion is maintained between the whisker crystal layer of the black oxidation-treated layer and the encapsulating resin S3. Therefore, it is possible to prevent cracks from being generated in the 1C package. Installation --- (Please read the precautions on the back before filling this page). Thread · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 17 486800 A7 B7 V. Description of the invention (15 In addition The present invention is not limited to these embodiments, and various changes and modifications can be made without departing from the scope of the present invention.

Please read the precautions on the back before ordering. Printed on the paper printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm). 18 486800 A7 B7 V. Description of Invention (16 elements Reference Tables • Intellectual Property of the Ministry of Economic Affairs; Printed by Employee Consumer Cooperatives 2 Black Oxidation Treatment Layer 3 Lead Frame 4 Cu20 Layer 5 Encapsulating Resin 21 Lead Frame 22 Black Oxidation Treatment Layer 25 Encapsulating Resin Layer 26 Copper Dioxide Layer 27 Cll02 Layer 28 Peeling part 30 Lead frame 31 1C chip 32 Lead 33 Encapsulating resin 34 Radiator plate 35 Lead 36 Internal terminal 40 Lead frame 41 1C chip 42 Lead 43 Encapsulating resin 45 Lead 46 Internal terminal 51 1C chip 52 Lead 53 Encapsulating resin 54 Radiator plate 55 Leads 56 Internal terminals (Please read the precautions on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 19

Claims (1)

Injury 800 A8 B8 C8 D8 Printed by the Ministry of Economic Affairs, Intellectual Property, Industrial and Consumer Cooperatives. Patent application scope 1. A semiconductor device comprising: a radiation made of Cu or a Cu alloy and having a surface provided with a black oxidation treatment layer A body plate; a wafer fixed at a predetermined position on the radiator plate; a plurality of internal terminals arranged on the radiator plate and electrically connected to the wafer; encapsulating the radiator plate, the wafer and An encapsulating resin for the internal terminals; and a Cu2O layer disposed between the surface of the radiator plate and the black oxidation treatment layer. For example, the semiconductor device of claim 1 in which the black oxidation treatment layer is made of a CuO layer. A semiconductor element includes: a lead frame made of Cu or a Cu alloy and having a surface provided with a black oxide treatment layer; a wafer fixed at a predetermined position on the lead frame; a plurality of and Internal terminals electrically connected to the chip · Encapsulating resin encapsulating the lead frame, the chip, and the internal terminals; and a C \ l20 layer disposed between the surface of the lead frame and the black oxidation treatment layer . 4. The semiconductor device according to claim 3, wherein the black oxidation treatment layer is made of a CuO layer. 5 · —Semiconductor components, including: 1 wood paper size applicable to China National Standards (CNS) A4 specifications (210X 297 mm, please read the notice on the back again] I install page 2. 3. Order -20- 486800 A8 B8 C8 D8 The Ministry of Economics ’smart carpet is a lead frame printed by the Consumer Consumption Cooperative; a chip is fixed at a predetermined position on one of the first surfaces of the lead frame; Internal terminal for ground connection; a radiator plate disposed on a second surface of the lead frame opposite to the first surface, the radiator plate is made of Cu * Cu alloy and has a black oxidation treatment The surface of the layer; an encapsulating resin encapsulating the lead frame, the wafer, and the internal terminals; and a Cu20 layer disposed between the surface of the radiator plate and the black oxidation treatment layer. 6 · Rushen The semiconductor device according to item 5 of the patent, wherein the black oxidation treatment layer is made of a CuO layer. 7. The semiconductor device according to item 5 of the patent application, wherein the radiator plate is exposed from the encapsulating resin. A method for manufacturing a semiconductor device includes the following steps: a) forming a black oxidation treatment layer on a surface of a radiator plate made of Cu or a Cu alloy; (b) heating the radiator plate to A layer of Cu20 is formed between the surface of the radiator plate and the black oxidation treatment layer through oxidation; (c) a wafer is fixed at a predetermined position on the radiator plate; (d) a plurality of The internal terminals provided on the radiator board are electrically connected to the chip; and 8. The paper size is applicable to China National Standards (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling (This page) Line 21 6. Scope of patent application (e) The radiator plate, the wafer and the internal terminals are encapsulated by an encapsulating resin. 9. The method for manufacturing a semiconductor element according to item 8 of the scope of application for a patent, wherein the black oxidation treatment layer is made of a (^ 〇 layer. 1) a method for manufacturing a semiconductor element, comprising the following steps: (a) Forming a black oxidation treatment layer on one surface of a lead frame made of Cu or a Cu alloy; (b) heating the lead frame to cause oxidation between the surface of the lead frame and the black oxidation treatment layer; A Cu2O layer is formed; 0) a wafer is fixed at a predetermined position on the lead frame; (d) a plurality of internal terminals are electrically connected to the wafer; and (e) by an encapsulating resin Encapsulate the lead frame, the chip, and the internal terminals. 11. The method for manufacturing a semiconductor device according to claim 10, wherein the black oxidation treatment layer is made of a CuO layer. 12. A lead frame comprising: a base material made of Cu or a Cu alloy and having a surface provided with a black oxidation treatment layer; and a surface material provided on the surface of the base material and the black oxidation treatment layer Cu20 layer. 13. The lead frame according to item 12 of the application, wherein the black oxidation treatment layer is made of a CuO layer. 14. · A method for manufacturing a lead frame, comprising the following steps: (a) one of the base materials made of Cu or Cu alloys, the paper size is applicable to the Chinese National Standard (CNS) A4 (210X 297) (Mm) '-22-486800 丨 A8 B8 C8 D8 forms a black oxidation treatment layer on the patent application surface; and (b) heats the base material to oxidize the surface of the base material and the black oxide by oxidation. A Cu2O layer was formed between the treatment layers. 15. The method of manufacturing a lead frame according to item 14 of the scope of patent application, wherein the black oxidation treatment layer is made of a CuO layer. ---------- ^ ------, 玎 ------ line (please read the notes on the back before filling this page) Ministry of Economic Affairs, Timely, 4 Bureaus 3 (Industrial Consumption Cooperative printed version of ft scale is applicable to China National Standards (CNS) A4 specification (210X 297 mm) -23