TW396447B - Method of making a semiconductor device having planarized insulating layer - Google Patents

Method of making a semiconductor device having planarized insulating layer Download PDF

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Publication number
TW396447B
TW396447B TW086117042A TW86117042A TW396447B TW 396447 B TW396447 B TW 396447B TW 086117042 A TW086117042 A TW 086117042A TW 86117042 A TW86117042 A TW 86117042A TW 396447 B TW396447 B TW 396447B
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atomic
layer
patent application
wiring
oxygen
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TW086117042A
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English (en)
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Seiichirou Oohira
Katsuyuki Karakawa
Takatoshi Izumi
Masahiko Toki
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Fujitsu Ltd
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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Description

A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（1 ) 發明背景a) 發明的領域本發明是關於用來製造半導體裝置的方法，更特別 地是適合於有多層配線之半導體裝置的半導體裝置製造方 5 法。b) 相關技藝的描述 對於高積層半導體而言多層配線技術是必要的Γ它 需藉由中間絕緣薄膜層作為電氣絕緣配線層。當較下面的 配線圖形成時，此圖不可避免地有不規則的上表面。如果 10 此層間絕緣膜是順著下層的型態而形成，在此層間絕緣膜 上也會形成相似的不.規則表面。如果較上面的配線層是形 成於下層不規則表面，在光微影'或配線層形成圖式時會發 生一些問題。因此，在較下面的配線圖形成後，一般需要 在配線圖式間凹凸不平處充填平面化材料以形成一具有平 15 整表面的層間絕緣膜。 幵> 成具有平整化功能的絕緣膜的各種不同技術已被 發展出來。不過，具有平整化功能的絕緣膜通常較沿下層 表面生邊生成的緻禮絕緣層在防水性上等的功能表現差。 因此它平常是堆疊多數類型絕緣膜，以達到具有平整表面 20的層間彳邑緣膜。一積層媒的例子將描述於下。 在下層配線層形成圖式時，通常利用阻抗圖式作為 光罩以進行乾钱刻。在乾敍刻中，當產物沈積於㈣的配 線圖式之侧壁時，配線層不需要的部分被氣化或氯化而氣 化移除。這些產物在_時保留於配線圖式之侧壁或在絕 (請先閲讀背面之注意事項再填寫本頁). 、.. ------— — — — —--— 11 — — — — — ^ ^ ϋ — — — — — ---11111 > ^ -------- • n 1 本紙張尺度適用中國國家標準(CNS)A4規格(210了心7公釐) A7
五、發明說明（2 ) 緣膜的表面上，同時變成沈積殘留物。這些沈積殘留物變 成造成配線圖式間短路與產生有缺陷半導體裝置的原因之 -。為了要除去如此的沈積殘留物，則使用濕式钱刻。 濕式蝕刻後，在圖式配線層表面會形成一有優異功 月b表見的如電衆氧化物膜的緻密膜。如此的緻密膜是沿下 一層表面而沈積，且有不規則的上表面。為了要平面化該不 一規則表面，可利用常壓化學氣相沈積（CVD)在此破密 膜上形成具有平整化功能的絕緣膜。 如f用含有機胺的液體進行濕式蝕刻以移除沈積殘 10留物，則由沈積殘留物所造成的短路或類似情況將可避免 。不過，此有平整化功能且由常壓化學氣相沈積的絕緣膜 之表面型態會相當的降解，而且即使有平整化功能的絕緣 膜形成，也無法形成足夠平整的薄膜。 發明的摘要 15 本發明的目的是提供一可以製造生成具有足夠平整 化功能’且可避免因沈積殘留物所造成短路之層間絕緣膜 .的半導體裝置的方法。.. 本發明的其它目的是提供形成利用含胺的液體移除 沈積殘留物’且具有足夠平整化功能之層間絕緣膜的半導 20 體裝置之製造方法。 依照本發明的一觀念，提供一製造半導體裝置的方 法’其步驟包含：在半導體基材上形成一配線層；利用阻 抗圖式作為光罩以進行乾蝕刻此配線層，以形成配線圖式 ，將此配線圖式沈浸於含有胺的液體中以移除在乾姓刻中 本紙張尺度適用中國國豕標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) -線 經濟部智慧財產局具工消費合作社印製 A7 ____B7_____ 五Λ發明說明（3 ) 所生成的沈積殘留物；利用不含胺且可移除沈積殘留物的 流體處理該沈浸於含有胺的液體中之配線圖式；在此處理 過的配線圖式表面共形上形成一共形絕緣層；利用CvD 在此共形絕緣層上形成一有平面化功能的絕緣層。 5 在配線圖式經含有胺的液體清洗後，利用不含胺且 可移除沈積殘留物更進一步處珪。因此，可充分地平面化 在此共形絕緣層上所形成具有平面化功能的絕緣層。… 即使利用含有液體的進行沈積殘留物移除處理程序 ，它可形成一具有相當平整的表面之層間絕緣膜。因此可 10 有效率地製造有多層配線圖式的半導體裝置。 草圖簡述 第1A — 1F圖是說明依照本發明的二具體化之製造半 ’導體裝军的方法之截面圖。 第2A— 2C圖是說明用以幫助、瞭尊本發明之此較例子 15 的截面圖。 第Μ二3 c圖是說-明PRAMS的製造程序。 較佳具體化的詳細說明 本發明的具體化將會參考那些伴隨的草圖而作說明 〇 20 用以製造動態隨機存取記憶體（DRAMs)的製造程 序，作為高積層半導體裝置製造程序的例子，將參考第3A —3__C圖而加以說明。 如第3A圖所示，在半導體基材50的表面上，利用一 廣為人知的LOCOS技術生成一場氧化膜51。定義的活化 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 装！---訂---IK!·線’ 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（4 10 15 區是由此場氧化膜51所包圍。 在此活化區表面上經由熱氧化形成一閘氧化膜52。 在此閘氧化膜52上形成&急及矽化物層場膜 51植入離子’以職。其後，執行許多 所需的轾序，如絕緣膜形成程序，經由光微影法將接觸孔 開放程序’以形成埋於絕緣層54的一位元線57和一電容58 的結構。此電容58可以有如石夕化物膜與多矽層絕緣膜-乏幕 所周知的鰭狀結構》 如第3B圖所示，在絕緣層54表面經蝕刻形成一阻抗 圖式（未顯示出來），而於絕緣層54中形成接觸孔59。此接 觸孔59是用於一配線圖式以連接_M〇s電晶體的源極/汲 極區。 如第3C圖所示’在提供接觸孔的基材上形成的配線 層61，同時一阻抗膜62是沈積在配線層61上。例如，此配 線層61含有一阻隔金屬層61a，一主要的配線層61b，和抗 反射層61c。
^衣--------訂---------線 (請先閱讀背面之注意事項再填寫本頁)
I I I I n 一 經濟部智慧財產局員工消費合作社印製 此阻抗膜62是有選擇性的暴露以生成一暴露區63， 此暴露區63可經由顯影而移除》同時可藉由使用殘留的阻 抗圖式62作為光罩，而蝕刻此配線層61。 雖然配線層61在蝕刻結束前與源極/汲極區55是電氣 連通的，在蝕刻結束後該配線層61變成包括與源極/汲極 區55電氣連通區和在絕緣膜上生成一區域以與基材電氣絕 緣。 在下列描述中’假設半導體基材已經有如第3C圖所 本^氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐 A7 -~-----__ 五、發明說明（5 ) 不的半導體裝置結構形成。為了要簡化那些草圖，在圖中 省略此半導體裝置結構。 參考第1A圖，具有雜質滲雜區域12的半導體基材u ，在其表面有一絕緣層13生成。雖然這絕緣層13是晝成一 5元件’它可包含-經由熱氧化形成的場氧化物膜，氧化物 和沈積在該基材表面的相似物。滲雜區域12是M〇s電晶 體的源極/汲極區。絕緣層13中有一接觸孔形成用以暴.露 該擴散區域12。 阻隔金屬層21，主要的配線層23，和抗反射層24依 10 序沈積在這個基材上。舉例來說，此阻隔金屬層21是由單 層氮化鈦所組成，或在鈦層上堆疊鈦層及氮化鈦層而形成 積層結構。主要的配線層23，舉例來說，是一鎢層，一鋁 銅（0.5%)合金層，一鋁銅(0.5%)矽合金層，或在銅層上有 銅層及氮化鈦層堆疊而形成積層結構。抗反射層24可能是 15 一無定形碳膜，無定形矽膜，無定形氮氧化矽膜，氮化鈦 膜，氮化嫣膜，氮化鎮鈦膜，五氧化二钽膜或一纽膜。此 阻隔金屬層’主要的配線層和抗反射層24可以濺鍍法生成 。此抗反射層24可降低在光微影碎光反射量，在某些情況 中可能被省略。 20 在這提供積層配線層的基材表面上，有一層光阻層 被塗佈、暴露和顯影以形成阻抗圖式25。 如第1B圖所示，使用該阻抗p式25作為光罩，此抗 反射層24、主要的配線層23和阻隔金屬層21進行乾蝕刻。 對於此乾蝕刻而言，是使用含有氟或氣的氣體作為蝕刻氣 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 --------Γ裝---------—訂------線丨------------- I— I_________ 五、發明說明（6 ) 體。此圖式化配線層有一基材_接觸配線圖式W1，經由接 觸孔Η與基材11形成電氣連通，且與絕緣膜13上配線圖式 W2和W3電氣絕緣。 在乾蝕刻期間，沈積殘留物26生成並黏著於該蝕刻 5的配線圖式之側壁與絕緣膜13表面上。 一.如果絕緣膜間層是在該阻抗圖式25被移除而以該沈 積殘留物形成於基材之上時，稍早所述在配線圖式間商短 路或相似情況可能發生。在這個具體化中，如第1C圖所 示，阻抗圖式25已被移除的配線圖式表面，可與含有有機 1〇胺的液體28接觸以移除沈積殘留物26。此有機胺包括一級 胺。此沈積殘留物26預期是可由絕緣膜13表面或由配線圖 式之侧壁脫附或脫離。可用含有土級或三級胺的液體替代 3有一級的液體，以除去沈積殘留物。舉例來說，可使用曱 基胺、二曱基胺與三甲基胺分別作為一級、二級和三級胺。 15 如第1D圖所示，經含有有機胺的液體處理之配線圖 式表面，你被浸於一含5 wt%氟化銨的液體29中。此氟化 叙的遭度在0.1 wt%至50 wt%是足夠的。也可用濃度在n wt%至50 wt%之間，如5 wt%，含氟化氫的液體以取代 氟化銨。所使用含氟化氫的來源氣體濃度範圍是8〇 wt% 20 至 100 wt% 〇 如第1E圖所示，接受如上述濕蝕刻或清洗處理的基 材表面上’可形成具有相當高功能表現的共形絕緣膜3j。 此共形絕緣膜31也可使用二極平行板電漿CVD系統、誘 發偶合電漿CVD系統、電子迴旋加速器共振（ECR)電漿 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 五、發明說明（7 CVD系統、常壓電聚CVD系統或類似系統而生成。舉例 來說，含有氧化矽之共形絕緣膦3丨是由二極平行板電漿 CVD系統所生成。在二極平行板電漿cvd系統情況中’ 在二電極板上可使用單頻或雙頻的R：F動力。 5 在形成共形絕緣膜31聘，最好使用第一和第二來源 氣體。此第一來源氣體是由矽烷、乙矽烷、Si(OC-R)4、 HSi(OC-R)3、四氟矽烷、二氟矽烷、六氟乙烷、烈丨(〇〔_ R)3、F2Si(oc~~r)2、r_pH2、R2_ph、乙硼烷、p(〇 R)3、 p〇(〇-r)3r3-b、r2_bh、r_BH2、B(0_R)3、三氣化硼、 10 FB(〇-R)2、ϊ^Β(〇—R)2 ’其中r是烷氧基，選定一種或由 一至五種之組合材料。第二來源氣體是由一氧化二氮、氧 氣臭氧、氧'氟氧、氣氣、稀有氣體和氮氣中選定一種 或二至五種之組合材料。 用於配線層之共形絕緣層31有制動薄膜的功能，且 15可作為具有平面化功能的絕緣膜的下層。為滿足此兩種功 旎，最好是形成各自具有兩種功能之一的第一與第二層積 層的共形絕緣層31。 經濟部智慧財產局員工消費合作社印製 舉例來說，第一層厚100 nm，且其组成為矽33.67原 子/〇，氧59.26原子％，氮4_04原子％，與氫4.〇4原子％。而 20第二層厚30 rnn，且其組成為矽33.65原子％，氧3〇·28原子 % ’氮23.98原子％，與氫12.69原子％。 共形絕緣層31的第一和第二層之成分不限於上述的 組成。如第一層的組成可含有矽25原子％_45原子％，氧3〇 原子％-65原子％ ’氮〇原子％_25原子％，氫〇 〇1原子％ _25 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐） A7 A7 經濟部智慧財產局員工消費合作社印製 五、發明獅（8 ) ' — 原子/〇，虱0.001原子％_3肩子％，款〇 〇〇1原子％_25原子％ ，細厕原子％'1()原子％，磷請1原子％]0原子％，與 碳0.001原子％_50原子％。 ” 5 _另外，第二層的成分可含有矽25原子％ _35原子％， 5氧45原子％ _7〇原子％，氮〇·〇〇〇ι原子原子％，氯 .〇._1原子％，子％，氬㈣觀料…原子％，㈣侧 原子％_15原子％，磷0.0001原子％-1〇原子％，與碳〇.〇-〇〇! 原子％-2原子％。 較好妁是10nm或更厚，且第二層是5mn或更厚。 1〇 形成此共形絕緣層31的雙層結構的第一層，可使其 較第二層更緻密且有更優異的制動功能表現，同時當具有 平面化功能絕緣膜作為下層，第上層的表現功能較第一層 優異。第一層的表現功能分別包括平面化、步驟涵蓋範圍 、表面平坦化、生長速度穩定性、和覆蓋層的相似功能。 15 舉例來說，具有較熱氧化矽優越的功能，或更好是較電漿 氮化矽膜更佳的薄膜作為第二層膜。 如第1F圖所示，在共形絕緣層31上，.經由常壓CVD 形成絕緣膜32 ’具有平面化功能且含有它的主要成分二氧 化石夕。舉例來說，這CVD藉由具有烷氧基，如四乙基氧 20 矽烧（TEOS)，之含矽液體來源的供應及在含有〇.1 wt % -10 wt %臭氧的氧氣氣氛下將惰性氣體送入在300°C或更 高溫度加熱的基材上而進行。此含有烷氧基的液體源可以是 TMS[HSi(OCH3)3]、TRIES[HSi(OC2H5)3]、TEOS[Si(OC2H5)4] 、TMB[B(〇CH3)3]、TEB[B(OC2H5)3]、TEFS[FSi(OC2H5)3] 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） _ 11 _
(請先閱讀背面之注意事項再填寫本頁) 訂--------線 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（9 ) 、TMP[P(OCH3)3]、TMOP[PO(OCH3)3]、TEOP[PO(OC2H5)3] 或相似物。用於具有平面化功能之絕緣膜32的來源氣體可 以是由 teos/o3/o2/n2、tms/o3/o2/n2、tries/o3/o2/n2 、TE0S/TMS/03/02/N2 、 teos/tries/o3/o2/n2 、 5 teos/tefs/o3/o2/n2與矽烷/〇2/乂中所選出的材料之組合 〇 — 舉例來說，具有平面化功能厚度在400 nm -800 ηδι的 絕緣膜可藉由供應由惰性氣體所攜帶之TEOS經由常壓 CVD在含有4wt% -6wt%臭氧的氧氣氣氛下於350°C -450 10 °C溫度加熱基材而形成。此絕緣膜32的成分是矽32.45原 子％’氧62.88原子％，氮3.22原子％，與氫4.87原子％。絕 緣膜32的成分不限於上述的組成.。舉例來說，具有平面化 功能之絕緣膜32的成分可以含有矽25原子％ -45原子％， 氧30原子％-65原子％，氮0.001原子％-25原子％，氫0.001 15 原子％ -25原子％，氬0.001原子％-3原子％，氟0.001原子 %-25原子％，蝴〇.〇〇1原子％-1〇原子％，填〇.〇〇1原子％_1〇 原子％，與碳〇.〇〇1原子％-50原子％。 用於具有平面化功能之絕緣膜32的來源氣體，第一 來源氣體是由石夕烧、乙石夕烧、Si(〇C-R)4、HSi(OC-R)3、 20 四氟矽燒、二氟矽規、六氟乙烧、FSi(OC-R)3、F2Si ( OC —R) 2、R-PH2、R2-PH、乙侧^、I>(〇_r)3、p〇(〇_r)3r3_ B、r2:bh、R-BH2、B(0-R)3、三氟化硼、fb(0-R)2、f2b(o —R)2 ’其中R是烷氧基’選定一種或二至三種之組合材料 。第二來源氣體是由氧氣、臭氧、氧、稀有氣體和氮氣中 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------ο仏--------訂---------線， (請先閱讀背面之注意事項再填寫本頁) 12 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（10 ) 選定一種或二至三種之組合材料。 如第1F圖所示，雖然絕緣膜32的表面在配線圖式之 間的凹凸部分有-些凹痕，它也較共形絕緣層31的組織形 態更平面化。在那上述的情況中，甚至當沈積殘留物是用 5含有有機胺的液體徐去，之後此基材的表面利用氨氣或氟 化氫加以處理，可以沈積出_具有滿足它本性平面化功能 的平面化層間絕緣膜。 在進行第1F圖的程序後，在層間絕緣膜中可形成一 接觸孔’以暴露該下層配線圖式之表面，且形成一覆蓋的 10 配線圖式。如果需要，可形成其它許多的層間絕緣膜與配 線層用。 為了要幫助瞭解本發明，一比較例子將敛述於下。 第2A圖是一經含有機胺的液體處理後的基材，沒有 以第1F圖處理而生成層間絕緣膜的基材截面示意圖。明_ 15 顯地所形成的共形絕緣膜31與第1E和1F圖所示之共形絕 緣膜31類似。 不過，在共形絕緣膜31上所形成且具有平面化功能 的絕緣膜32，在基材-接觸配線圖式W1與絕緣配線圖式界2 和W3間的厚度有很大的差異。此絕緣層32不具有令人滿 20 意的平面化功能。如果在這層間絕緣膜上所生成的覆蓋配 線圖式有很大的距離，在光微影與蝕刻時可能發生一些問 題，而使其難以形成有高精密性的覆蓋配線圖式。 本發明已經研究下述的現象。第圖中顯示配線圖 式的表面經含有機胺的液體處理後的配線圖式。該基材_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 13 ------------/1^装--------訂--------線.- (請先閱讀背面之注意事項再填寫本頁) i A7
五、發明說明（11 ) 接觸配線圖式W1與絕緣配線圖sW2和％3間的表面電位 差约0.5 V-50 V。當沈積殘留物被溶入有機胺液體之内時 ’該沈積殘留物可自配線圖式表面與絕緣層上脫附或脫離 。且其後可因表面電位而選擇性地係附或黏著於基材—接 5 觸配線圖式W1表面。 如第2C圖所示，如果共形絕緣膜31是沈積於附著有 ‘一沈積殘留物的接觸配線圖式表面上時，在基材-接觸配線 圖式wi表面上的共形絕緣層31a含有沈積殘留物26的成分 且其性質與絕緣配線圖式W2和W3表面上的共形絕緣 10 層31b不同。 經濟部智慧財產局員工消費合作社印製. I 如果具有固有平面化功能的絕緣膜32是生成於共形 絕緣膜31a與31b上時，該絕緣層32的沈積量因下層表面的 不同而有差異。在第2A圖中所示之層間絕緣膜的表面距 離而可視成，因沈積殘留物附著於基材_接觸配線圖式W1 U 表面所造成。 如第1D圖所示’該基材表面可以氨氣或氟化氫加以 處理，而將附著於基材_接觸配線圖式界〗表面的沈積殘留 物去除《意即，氟化物離子或相似物可使基材_接觸配線 圖式與絕緣配線圖式的表面電位相等，且可蝕刻在此配線 20圖式上的數個原子層，使得附著的沈積殘留物溶解，並從 配.線圖式表面去除。 氟化物離子的上述效應可由氫氧化物離子，氧自由 基’與氧離子的混合氣體而獲得。 將基材沈浸於含氟離子之液體的類似效應也可從將 ______ 本纸張尺度適用中國國家標準（CNS)A4規格⑵Q χ 297公髮） —- A7 B7 五、發明說明（12) 基材沈浸於含氯或氫氧化物的液體而獲得。如果它含有01 wt%-50 wt%的氯即足夠。舉例來說，可將配線層沈浸於 含10 wt%氯的液體。而氧自由基與氧離子的混合氣體可 由氧電漿來供應。例如在二極平行電漿CVD系統中，氧 5電漿可在10拖耳或更高的氧氣氛中在上層平行電極上給予 0.5 W/cm2的RF動力而生成。 本發明關於較佳具體化已經被描述。本發明不僅限 於上述的具體化。明顯地利用本技藝也可作各種不同妁修. 正、改良、組合與類似處理。 (請先閱讀背面之注咅？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 元件編號對照表 11 半導體基材 51 場氧化膜 12 雜質滲雜區域 52 閘氧化膜 13 絕緣層 53a 多梦層 21 阻隔金屬層 55 源極/没極區 23 _配線層 54 絕緣層 24 抗反射層 57 位元線 25 阻抗圖式 58 電容 26 沈積殘留物 59 接觸孔 28 液體 61 配線層 29 液體 61a 阻隔金屬層 31 共形絕緣膜 61b 主要的配線層 32 絕緣膜 61c 反射層 31a與31b共形絕緣膜 62 阻抗膜 50 半導體基材 63 暴露區 灯_ 本紙張尺度適用中關家標^

Claims (1)

  1. 2. 經濟部智慧財產局員工消費合作社印製
    本紙張尺度適用中國國家標準（CNS Α8 Β8 C8 _ __ D8 六、申請專利範圍 第86117042號專利請案申請專利範圍修正本 修正日期：89年〇1月 1 · 種製造半導體.裝置的方法，其包含下列步驟： 在一半導體基材上形成一配線1 ; 使用一阻圖案作為光罩藉由乾蝕刻該配線層’以 形成一配線圖案； 將此配線圖案沈浸於含有胺的液體中，以移徐在 乾韻刻中所生成的沈積殘留物； 利用不含胺但含有可務除沈積瑋留物之離子或自 由基的流體來處理該沈浸於含有胺夜體中之配線圖 在該處理過的配線圖案上形成一共氓幾.緣層;；： 利用CyD在該共形絕祿層上形成二有聲面也功能 的絕_緣層》 依據申請專㈣圍第1項的方法，其中..獅成具有該平 面化功能的該絕緣層的步驟，包含藉由常壓㈣形成 一絕緣層的該步騍。 3. 依據申請專利範I第1項的方法，其水勤己義層含有-阻隔兔屋.層奥养要配'線層之積層。. 4. 依據申請專利範圍第3頊的古 乐項的方法’其中孩配氣層含有F 在該積層土積層的.抗反射膜。 5:依據申請專利範圍_的方法，其令該阻隔金屬層是 -氮減層，或在鈦層切成鈦層錢切層積層。 6.依據申請專利範園第3項的方法，其中‘主要配線層含 公嫠） (請先閱讀背面之注意事項再填寫本頁) I · 2. 經濟部智慧財產局員工消費合作社印製
    本紙張尺度適用中國國家標準（CNS Α8 Β8 C8 _ __ D8 六、申請專利範圍 第86117042號專利請案申請專利範圍修正本 修正日期：89年〇1月 1 · 種製造半導體.裝置的方法，其包含下列步驟： 在一半導體基材上形成一配線1 ; 使用一阻圖案作為光罩藉由乾蝕刻該配線層’以 形成一配線圖案； 將此配線圖案沈浸於含有胺的液體中，以移徐在 乾韻刻中所生成的沈積殘留物； 利用不含胺但含有可務除沈積瑋留物之離子或自 由基的流體來處理該沈浸於含有胺夜體中之配線圖 在該處理過的配線圖案上形成一共氓幾.緣層;；： 利用CyD在該共形絕祿層上形成二有聲面也功能 的絕_緣層》 依據申請專㈣圍第1項的方法，其中..獅成具有該平 面化功能的該絕緣層的步驟，包含藉由常壓㈣形成 一絕緣層的該步騍。 3. 依據申請專利範I第1項的方法，其水勤己義層含有-阻隔兔屋.層奥养要配'線層之積層。. 4. 依據申請專利範圍第3頊的古 乐項的方法’其中孩配氣層含有F 在該積層土積層的.抗反射膜。 5:依據申請專利範圍_的方法，其令該阻隔金屬層是 -氮減層，或在鈦層切成鈦層錢切層積層。 6.依據申請專利範園第3項的方法，其中‘主要配線層含 公嫠） (請先閱讀背面之注意事項再填寫本頁) I · Αδ Β8 C8 D8 六、申請專利範園 ，有-鶴層，銅合金層，__々合金層，及在銅 層占有銅層.及氮化鈦_層積層之一。 i依據申請專利展圍第旧的方法，其中篇含有有機骇的 -液體包含一級、二級.和三級胺中之—者。 8·依據申請專利範亂策〗至7項任一項的方法，其中該流 體處— 理該..配線.:圖_案的步驟，包含將該配線圖案沈浸於 含氣俗合_，物—或_.氣的液體之步驟.。 - 9,依據申請專利範圍第丨至7項任一項的方法）其中該流 體處理該配線圖案的步驟包含將該基材暴露於氧電漿 的步驟。 冲依據申請專利範爵第1至7—項任<項—的方法，其中該共 ..形絕緣層是”具-有-第一 t與一在農.第..一層..上遵處之第 二層丈積層-，該第一層軚該第二層緻密，且在姓為具 平....面_.化:功孤—的―該絕..緣膜的.下層時，該第二層較該第一 層_主.更.優異的性質。 11.依據申請專利範圍第m項'的方法，其中該第一層的梦 組成包食石夕25原土％一:45原子％，氣30原子％_65原子％ ，.氪0原子％’25原子％ ’氬0.01原子％ :25原子％，氬 0.001原子％-3原子％，氟〇.001原子％ 25原子％，硼Q 〇〇ι 原于。>。-10原子％ ’磷⑽〇1原子％_1〇原子％，與碳0.00 原子％-50原子％。 I2·依據申讀專利範圍第10項的方法，其中該第二層的該 組成包含矽25原子％ _35原子％，氧45原子％ _7〇原子％ ’氮0.0001原-子％'-3,0原子％，氫0 0001原子％ _5原子 (請先聞馈背面之注意事項再填寫本頁) 、-· 槔- 經濟部智慧財產局員工消費合作社印製 本紙果尺度適用中國國家標準（CNS ) A4規格（21〇χ297公酱 Αδ Β8 C8 D8 六、申請專利範園 ，有-鶴層，銅合金層，__々合金層，及在銅 層占有銅層.及氮化鈦_層積層之一。 i依據申請專利展圍第旧的方法，其中篇含有有機骇的 -液體包含一級、二級.和三級胺中之—者。 8·依據申請專利範亂策〗至7項任一項的方法，其中該流 體處— 理該..配線.:圖_案的步驟，包含將該配線圖案沈浸於 含氣俗合_，物—或_.氣的液體之步驟.。 - 9,依據申請專利範圍第丨至7項任一項的方法）其中該流 體處理該配線圖案的步驟包含將該基材暴露於氧電漿 的步驟。 冲依據申請專利範爵第1至7—項任<項—的方法，其中該共 ..形絕緣層是”具-有-第一 t與一在農.第..一層..上遵處之第 二層丈積層-，該第一層軚該第二層緻密，且在姓為具 平....面_.化:功孤—的―該絕..緣膜的.下層時，該第二層較該第一 層_主.更.優異的性質。 11.依據申請專利範圍第m項'的方法，其中該第一層的梦 組成包食石夕25原土％一:45原子％，氣30原子％_65原子％ ，.氪0原子％’25原子％ ’氬0.01原子％ :25原子％，氬 0.001原子％-3原子％，氟〇.001原子％ 25原子％，硼Q 〇〇ι 原于。>。-10原子％ ’磷⑽〇1原子％_1〇原子％，與碳0.00 原子％-50原子％。 I2·依據申讀專利範圍第10項的方法，其中該第二層的該 組成包含矽25原子％ _35原子％，氧45原子％ _7〇原子％ ’氮0.0001原-子％'-3,0原子％，氫0 0001原子％ _5原子 (請先聞馈背面之注意事項再填寫本頁) 、-· 槔- 經濟部智慧財產局員工消費合作社印製 本紙果尺度適用中國國家標準（CNS ) A4規格（21〇χ297公酱 A8 B8 C8 D8 經濟部智慧財產局貝工消費合作社印製 六、申請專利範圍 % ’氬0.0001原子％-3原子％，氟〇%_〇汹^〇原子％_15原子 %，填0.0001原子％-10原子％，與碳0細从原子％2厚 子％。 13.依據甲請尊利範圍第1至7項任一項.與方法，其中該用 1' 於形成該共形絕緣模-之〜步驟中的該第一來源氣體，悬 為一種—下―列材料或由二至五種下列材料的組合：矽烷 、.使烧、&(OC-R)4 丄氟石夕.烧、二氟 矽烷、—六氟乙烷、FSi(〇C-R)3、F2Si C0C-R-) 2上反:Mr 、R2_ph、乙领烧、P ( 〇-R) 3、PQ(0-R)3R3-B、R2-BH 、R-BH2、B(0-R)3、三氟化硼、FB(0_r)2、f2b (〇_R) 2 ’其中R是烷氧基；而該第二來源氣體係為一種下列 材料或由二至五種下列材料的組合：一氧化二氮、氧 氣、臭氧、.氧、氟兔、氨氣、稀有氣體和氮氣。 14?依褲申請專利範圍第1至7項任一項的方法，m孩 平面化功能的該絕緣層之該成分含有矽25原予％ -45原 子％ ’氧30原子％-65原子％，氮0.001原子％_25原子％ ，氫0.001原子％ -25原子％.’氬0.001原子％-3原子％， 氟〇.〇01原子％-25原子％，碉〇.〇〇1原子％_1〇原子％，罐 0.001原子°/a-—10原子％、，與碳〇_〇〇1原子％_5〇原子〇/0。 15.依據申請專利範圍第14項的方涂，其中在用於形成有 該平面化功能的m層之步驟中卷該第一來源氣體 ’ 種下莫林料或也二至三種之下述材料的組合 L.座烷 ' 乙矽烷、Si(OC-R)4、HSi(OC-R)3、四氟矽烷 '二氟矽烷、六氟乙烷、FSi(0C-R)3、F2Si (0C-R) 2 本紙張从適用中sa家揉準（CNS)从胁（2似297公董） ----_--irI---1--^朿 C请先s讀背面之泣意事項再填寫本頁) A8 B8 C8 D8 經濟部智慧財產局貝工消費合作社印製 六、申請專利範圍 % ’氬0.0001原子％-3原子％，氟〇%_〇汹^〇原子％_15原子 %，填0.0001原子％-10原子％，與碳0細从原子％2厚 子％。 13.依據甲請尊利範圍第1至7項任一項.與方法，其中該用 1' 於形成該共形絕緣模-之〜步驟中的該第一來源氣體，悬 為一種—下―列材料或由二至五種下列材料的組合：矽烷 、.使烧、&(OC-R)4 丄氟石夕.烧、二氟 矽烷、—六氟乙烷、FSi(〇C-R)3、F2Si C0C-R-) 2上反:Mr 、R2_ph、乙领烧、P ( 〇-R) 3、PQ(0-R)3R3-B、R2-BH 、R-BH2、B(0-R)3、三氟化硼、FB(0_r)2、f2b (〇_R) 2 ’其中R是烷氧基；而該第二來源氣體係為一種下列 材料或由二至五種下列材料的組合：一氧化二氮、氧 氣、臭氧、.氧、氟兔、氨氣、稀有氣體和氮氣。 14?依褲申請專利範圍第1至7項任一項的方法，m孩 平面化功能的該絕緣層之該成分含有矽25原予％ -45原 子％ ’氧30原子％-65原子％，氮0.001原子％_25原子％ ，氫0.001原子％ -25原子％.’氬0.001原子％-3原子％， 氟〇.〇01原子％-25原子％，碉〇.〇〇1原子％_1〇原子％，罐 0.001原子°/a-—10原子％、，與碳〇_〇〇1原子％_5〇原子〇/0。 15.依據申請專利範圍第14項的方涂，其中在用於形成有 該平面化功能的m層之步驟中卷該第一來源氣體 ’ 種下莫林料或也二至三種之下述材料的組合 L.座烷 ' 乙矽烷、Si(OC-R)4、HSi(OC-R)3、四氟矽烷 '二氟矽烷、六氟乙烷、FSi(0C-R)3、F2Si (0C-R) 2 本紙張从適用中sa家揉準（CNS)从胁（2似297公董） ----_--irI---1--^朿 C请先s讀背面之泣意事項再填寫本頁) S9644? b* D8 六、申請專利範圍 、r-ph2、r2-ph、乙硼烷、P (0-R) 3、P0(0-R)3R3-B 、r2-bh、r-bh2、b(o-r)3、三氟化硼、fb(〇-r)2 、F2B ( 0-R) 2，其中R是烷氧基；·而i第二來—溽氣::體是 由、一種下_.屢柱—制二至三種.之下..述材料的組合.氧 氣、臭氧、.氧、氟氧、稀有氣體和氮氣。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） S9644? b* D8 六、申請專利範圍 、r-ph2、r2-ph、乙硼烷、P (0-R) 3、P0(0-R)3R3-B 、r2-bh、r-bh2、b(o-r)3、三氟化硼、fb(〇-r)2 、F2B ( 0-R) 2，其中R是烷氧基；·而i第二來—溽氣::體是 由、一種下_.屢柱—制二至三種.之下..述材料的組合.氧 氣、臭氧、.氧、氟氧、稀有氣體和氮氣。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）
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