TW393768B - Semiconductor device and its manufacturing - Google Patents
Semiconductor device and its manufacturing Download PDFInfo
- Publication number
- TW393768B TW393768B TW086112786A TW86112786A TW393768B TW 393768 B TW393768 B TW 393768B TW 086112786 A TW086112786 A TW 086112786A TW 86112786 A TW86112786 A TW 86112786A TW 393768 B TW393768 B TW 393768B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- transistor
- oxide layer
- type
- polycrystalline silicon
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 271
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 155
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 517
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 275
- 239000010410 layer Substances 0.000 claims description 1570
- 239000012535 impurity Substances 0.000 claims description 234
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 218
- 238000011049 filling Methods 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 106
- -1 nitrogen ions Chemical class 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 58
- 238000009826 distribution Methods 0.000 claims description 52
- 239000011229 interlayer Substances 0.000 claims description 51
- 235000015170 shellfish Nutrition 0.000 claims description 45
- 239000013078 crystal Substances 0.000 claims description 43
- 238000007667 floating Methods 0.000 claims description 41
- 230000015572 biosynthetic process Effects 0.000 claims description 40
- 230000002079 cooperative effect Effects 0.000 claims description 38
- 150000002500 ions Chemical class 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 238000007254 oxidation reaction Methods 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 230000003647 oxidation Effects 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 7
- 238000004898 kneading Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052704 radon Inorganic materials 0.000 claims description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 2
- 238000009834 vaporization Methods 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims description 2
- 241000406668 Loxodonta cyclotis Species 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 210000003625 skull Anatomy 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 53
- 210000004027 cell Anatomy 0.000 description 165
- 229920002120 photoresistant polymer Polymers 0.000 description 103
- 230000002093 peripheral effect Effects 0.000 description 66
- 238000010586 diagram Methods 0.000 description 61
- 208000022010 Lhermitte-Duclos disease Diseases 0.000 description 56
- 238000005755 formation reaction Methods 0.000 description 39
- 229910052796 boron Inorganic materials 0.000 description 34
- 238000009413 insulation Methods 0.000 description 29
- 238000002513 implantation Methods 0.000 description 21
- 230000008859 change Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 238000002955 isolation Methods 0.000 description 16
- 229910052785 arsenic Inorganic materials 0.000 description 15
- 238000013461 design Methods 0.000 description 14
- 230000007547 defect Effects 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 239000007772 electrode material Substances 0.000 description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 10
- 230000005641 tunneling Effects 0.000 description 10
- 239000007943 implant Substances 0.000 description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000005496 tempering Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 230000005612 types of electricity Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 206010041349 Somnolence Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- QZIQJVCYUQZDIR-UHFFFAOYSA-N mechlorethamine hydrochloride Chemical compound Cl.ClCCN(C)CCCl QZIQJVCYUQZDIR-UHFFFAOYSA-N 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008832 zhongfu Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
- H01L21/76218—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0151—Manufacturing their isolation regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12394197A JP3648015B2 (ja) | 1997-05-14 | 1997-05-14 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW393768B true TW393768B (en) | 2000-06-11 |
Family
ID=14873149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086112786A TW393768B (en) | 1997-05-14 | 1997-09-04 | Semiconductor device and its manufacturing |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5998828A (enExample) |
| JP (1) | JP3648015B2 (enExample) |
| KR (1) | KR100315740B1 (enExample) |
| CN (1) | CN100401527C (enExample) |
| DE (1) | DE19800089A1 (enExample) |
| FR (1) | FR2763425B1 (enExample) |
| TW (1) | TW393768B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3602679B2 (ja) * | 1997-02-26 | 2004-12-15 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| US6188101B1 (en) * | 1998-01-14 | 2001-02-13 | Advanced Micro Devices, Inc. | Flash EPROM cell with reduced short channel effect and method for providing same |
| JP3769120B2 (ja) * | 1998-05-08 | 2006-04-19 | 株式会社東芝 | 半導体素子 |
| US6249841B1 (en) * | 1998-12-03 | 2001-06-19 | Ramtron International Corporation | Integrated circuit memory device and method incorporating flash and ferroelectric random access memory arrays |
| JP2001093903A (ja) | 1999-09-24 | 2001-04-06 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP3613113B2 (ja) * | 2000-01-21 | 2005-01-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US6333244B1 (en) * | 2000-01-26 | 2001-12-25 | Advanced Micro Devices, Inc. | CMOS fabrication process with differential rapid thermal anneal scheme |
| JP4823408B2 (ja) * | 2000-06-08 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| US6956757B2 (en) | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
| US6630386B1 (en) | 2000-07-18 | 2003-10-07 | Advanced Micro Devices, Inc | CMOS manufacturing process with self-amorphized source/drain junctions and extensions |
| US6521502B1 (en) | 2000-08-07 | 2003-02-18 | Advanced Micro Devices, Inc. | Solid phase epitaxy activation process for source/drain junction extensions and halo regions |
| JP2002208645A (ja) * | 2001-01-09 | 2002-07-26 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US6747318B1 (en) * | 2001-12-13 | 2004-06-08 | Lsi Logic Corporation | Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides |
| US7314812B2 (en) | 2003-08-28 | 2008-01-01 | Micron Technology, Inc. | Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal |
| JP2005101466A (ja) * | 2003-09-26 | 2005-04-14 | Renesas Technology Corp | 半導体記憶装置 |
| JP4513497B2 (ja) * | 2004-10-19 | 2010-07-28 | ソニー株式会社 | 固体撮像装置 |
| US7488635B2 (en) * | 2005-10-26 | 2009-02-10 | Freescale Semiconductor, Inc. | Semiconductor structure with reduced gate doping and methods for forming thereof |
| KR100742758B1 (ko) * | 2005-11-02 | 2007-07-26 | 경북대학교 산학협력단 | 플래시 메모리 소자 및 그 제조방법 |
| JP5567247B2 (ja) | 2006-02-07 | 2014-08-06 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
| US7573095B2 (en) * | 2006-12-05 | 2009-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cells with improved program/erase windows |
| US8217435B2 (en) | 2006-12-22 | 2012-07-10 | Intel Corporation | Floating body memory cell having gates favoring different conductivity type regions |
| US7652923B2 (en) * | 2007-02-02 | 2010-01-26 | Macronix International Co., Ltd. | Semiconductor device and memory and method of operating thereof |
| US7933133B2 (en) * | 2007-11-05 | 2011-04-26 | Contour Semiconductor, Inc. | Low cost, high-density rectifier matrix memory |
| US8969969B2 (en) * | 2009-03-20 | 2015-03-03 | International Business Machines Corporation | High threshold voltage NMOS transistors for low power IC technology |
| JP2012028790A (ja) * | 2011-08-19 | 2012-02-09 | Renesas Electronics Corp | 半導体装置 |
| CN103107076B (zh) * | 2011-11-11 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 分离栅极式快闪存储器及存储器组的制作方法 |
| CN103377901A (zh) * | 2012-04-28 | 2013-10-30 | 无锡华润上华科技有限公司 | 多晶硅栅极的形成方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4774197A (en) * | 1986-06-17 | 1988-09-27 | Advanced Micro Devices, Inc. | Method of improving silicon dioxide |
| JPH04157766A (ja) * | 1990-10-20 | 1992-05-29 | Sony Corp | シリコンゲートｐチャンネルＭＯＳ半導体装置の製造方法 |
| JP3830541B2 (ja) * | 1993-09-02 | 2006-10-04 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| US5514902A (en) * | 1993-09-16 | 1996-05-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having MOS transistor |
| JPH07335883A (ja) * | 1994-06-15 | 1995-12-22 | Toshiba Corp | 半導体装置の製造方法 |
| JPH08139315A (ja) * | 1994-11-09 | 1996-05-31 | Mitsubishi Electric Corp | Ｍｏｓトランジスタ、半導体装置及びそれらの製造方法 |
| US5674788A (en) * | 1995-06-06 | 1997-10-07 | Advanced Micro Devices, Inc. | Method of forming high pressure silicon oxynitride gate dielectrics |
| US5567638A (en) * | 1995-06-14 | 1996-10-22 | National Science Council | Method for suppressing boron penetration in PMOS with nitridized polysilicon gate |
| JPH0922999A (ja) * | 1995-07-07 | 1997-01-21 | Seiko Epson Corp | Ｍｉｓ型半導体装置及びその製造方法 |
| US5734186A (en) * | 1996-09-16 | 1998-03-31 | Delco Electronics Corporation | CMOS voltage clamp |
-
1997
- 1997-05-14 JP JP12394197A patent/JP3648015B2/ja not_active Expired - Fee Related
- 1997-09-04 TW TW086112786A patent/TW393768B/zh not_active IP Right Cessation
- 1997-09-26 KR KR1019970049100A patent/KR100315740B1/ko not_active Expired - Fee Related
- 1997-10-27 US US08/958,546 patent/US5998828A/en not_active Expired - Lifetime
- 1997-12-16 FR FR9715945A patent/FR2763425B1/fr not_active Expired - Fee Related
-
1998
- 1998-01-02 DE DE19800089A patent/DE19800089A1/de not_active Withdrawn
- 1998-02-05 CN CNB981043941A patent/CN100401527C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5998828A (en) | 1999-12-07 |
| JPH10313098A (ja) | 1998-11-24 |
| KR19980086383A (ko) | 1998-12-05 |
| CN1199248A (zh) | 1998-11-18 |
| KR100315740B1 (ko) | 2002-05-30 |
| FR2763425B1 (fr) | 2002-01-04 |
| DE19800089A1 (de) | 1998-11-19 |
| FR2763425A1 (fr) | 1998-11-20 |
| JP3648015B2 (ja) | 2005-05-18 |
| CN100401527C (zh) | 2008-07-09 |
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