TW376552B - Semiconductor device and method of production thereof - Google Patents
Semiconductor device and method of production thereofInfo
- Publication number
- TW376552B TW376552B TW085106982A TW85106982A TW376552B TW 376552 B TW376552 B TW 376552B TW 085106982 A TW085106982 A TW 085106982A TW 85106982 A TW85106982 A TW 85106982A TW 376552 B TW376552 B TW 376552B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- polycrystalline silicon
- oriented
- silicon film
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6731—Top-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13963395 | 1995-06-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW376552B true TW376552B (en) | 1999-12-11 |
Family
ID=15249830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085106982A TW376552B (en) | 1995-06-06 | 1996-06-07 | Semiconductor device and method of production thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6069388A (zh) |
| JP (1) | JP4003888B2 (zh) |
| KR (1) | KR100295718B1 (zh) |
| DE (1) | DE19681430B4 (zh) |
| TW (1) | TW376552B (zh) |
| WO (1) | WO1996039718A1 (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1112731C (zh) * | 1997-04-30 | 2003-06-25 | 三星电子株式会社 | 制造用于模拟功能的电容器的方法 |
| JP3090201B2 (ja) * | 1997-06-04 | 2000-09-18 | 日本電気株式会社 | 多結晶シリコン膜及び半導体装置 |
| US6507044B1 (en) * | 1999-03-25 | 2003-01-14 | Advanced Micro Devices, Inc. | Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication |
| JP4547753B2 (ja) * | 2000-01-14 | 2010-09-22 | 富士電機システムズ株式会社 | 半導体装置の製造方法 |
| AU2001296281A1 (en) | 2000-09-21 | 2002-04-02 | Michaeld. Casper | Integrated thin film capacitor/inductor/interconnect system and method |
| US6890629B2 (en) | 2001-09-21 | 2005-05-10 | Michael D. Casper | Integrated thin film capacitor/inductor/interconnect system and method |
| US7327582B2 (en) * | 2000-09-21 | 2008-02-05 | Ultrasource, Inc. | Integrated thin film capacitor/inductor/interconnect system and method |
| US6998696B2 (en) * | 2001-09-21 | 2006-02-14 | Casper Michael D | Integrated thin film capacitor/inductor/interconnect system and method |
| US7425877B2 (en) * | 2001-09-21 | 2008-09-16 | Ultrasource, Inc. | Lange coupler system and method |
| JP3781666B2 (ja) * | 2001-11-29 | 2006-05-31 | エルピーダメモリ株式会社 | ゲート電極の形成方法及びゲート電極構造 |
| KR100856326B1 (ko) * | 2006-07-19 | 2008-09-03 | 삼성전기주식회사 | 레이저 리프트 오프를 이용한 유전체 박막을 갖는 박막 커패시터 내장된 인쇄회로기판 제조방법, 및 이로부터 제조된 박막 커패시터 내장된 인쇄회로기판 |
| WO2011121778A1 (ja) * | 2010-03-31 | 2011-10-06 | 日新電機株式会社 | 薄膜多結晶シリコン、その製造方法および薄膜多結晶シリコンを製造するプラズマ装置 |
| MY170920A (en) | 2010-11-02 | 2019-09-17 | Carsem M Sdn Bhd | Leadframe package with recessed cavity for led |
| MY156107A (en) * | 2011-11-01 | 2016-01-15 | Carsem M Sdn Bhd | Large panel leadframe |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4305760A (en) * | 1978-12-22 | 1981-12-15 | Ncr Corporation | Polysilicon-to-substrate contact processing |
| US4240845A (en) * | 1980-02-04 | 1980-12-23 | International Business Machines Corporation | Method of fabricating random access memory device |
| JPS57160123A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Semiconductor device |
| US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
| GB2130009B (en) * | 1982-11-12 | 1986-04-03 | Rca Corp | Polycrystalline silicon layers for semiconductor devices |
| CA1239706A (en) * | 1984-11-26 | 1988-07-26 | Hisao Hayashi | Method of forming a thin semiconductor film |
| US5290729A (en) * | 1990-02-16 | 1994-03-01 | Mitsubishi Denki Kabushiki Kaisha | Stacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereof |
| JP2894361B2 (ja) * | 1990-02-16 | 1999-05-24 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5366917A (en) * | 1990-03-20 | 1994-11-22 | Nec Corporation | Method for fabricating polycrystalline silicon having micro roughness on the surface |
| JP3491903B2 (ja) * | 1990-05-18 | 2004-02-03 | セイコーエプソン株式会社 | 薄膜半導体装置の製造方法 |
| JP2912457B2 (ja) * | 1991-02-01 | 1999-06-28 | 日本板硝子株式会社 | 薄膜コンデンサ |
| JPH0590490A (ja) * | 1991-03-07 | 1993-04-09 | Miyazaki Oki Electric Co Ltd | 半導体素子の製造方法 |
| KR920018987A (ko) * | 1991-03-23 | 1992-10-22 | 김광호 | 캐패시터의 제조방법 |
| JPH05234900A (ja) * | 1992-02-19 | 1993-09-10 | Nec Corp | 半導体装置の製造方法 |
| US5420072A (en) * | 1994-02-04 | 1995-05-30 | Motorola, Inc. | Method for forming a conductive interconnect in an integrated circuit |
| US5696014A (en) * | 1994-03-11 | 1997-12-09 | Micron Semiconductor, Inc. | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch |
| JP3474332B2 (ja) * | 1994-10-11 | 2003-12-08 | 台灣茂▲夕▼電子股▲分▼有限公司 | Ｄｒａｍ用の自己調整されたキャパシタ底部プレート・ローカル相互接続方法 |
| JP3272212B2 (ja) * | 1995-09-29 | 2002-04-08 | シャープ株式会社 | 透過型液晶表示装置およびその製造方法 |
| KR100258979B1 (ko) * | 1997-08-14 | 2000-06-15 | 윤종용 | 유전막을 수소 분위기에서 열처리하는 반도체장치의 커패시터 제조방법 |
-
1996
- 1996-06-06 DE DE19681430T patent/DE19681430B4/de not_active Expired - Lifetime
- 1996-06-06 WO PCT/JP1996/001541 patent/WO1996039718A1/ja not_active Ceased
- 1996-06-06 JP JP50031397A patent/JP4003888B2/ja not_active Expired - Fee Related
- 1996-06-06 KR KR1019970708944A patent/KR100295718B1/ko not_active Expired - Lifetime
- 1996-06-07 TW TW085106982A patent/TW376552B/zh not_active IP Right Cessation
-
1997
- 1997-12-03 US US08/984,144 patent/US6069388A/en not_active Expired - Lifetime
-
2000
- 2000-02-25 US US09/513,343 patent/US6316339B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6069388A (en) | 2000-05-30 |
| US6316339B1 (en) | 2001-11-13 |
| KR100295718B1 (ko) | 2001-09-03 |
| WO1996039718A1 (en) | 1996-12-12 |
| KR19990022463A (ko) | 1999-03-25 |
| DE19681430T1 (de) | 1998-05-20 |
| JP4003888B2 (ja) | 2007-11-07 |
| DE19681430B4 (de) | 2006-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |