AU2001296281A1 - Integrated thin film capacitor/inductor/interconnect system and method - Google Patents

Integrated thin film capacitor/inductor/interconnect system and method

Info

Publication number
AU2001296281A1
AU2001296281A1 AU2001296281A AU9628101A AU2001296281A1 AU 2001296281 A1 AU2001296281 A1 AU 2001296281A1 AU 2001296281 A AU2001296281 A AU 2001296281A AU 9628101 A AU9628101 A AU 9628101A AU 2001296281 A1 AU2001296281 A1 AU 2001296281A1
Authority
AU
Australia
Prior art keywords
inductor
thin film
film capacitor
interconnect system
integrated thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296281A
Inventor
Michaeld. Casper
Williamb. Mraz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001296281A1 publication Critical patent/AU2001296281A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/467—Adding a circuit layer by thin film methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2804—Next to metal
AU2001296281A 2000-09-21 2001-09-21 Integrated thin film capacitor/inductor/interconnect system and method Abandoned AU2001296281A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23413500P 2000-09-21 2000-09-21
US60/234,135 2000-09-21
PCT/US2001/029575 WO2002025709A2 (en) 2000-09-21 2001-09-21 Integrated thin film capacitor/inductor/interconnect system and method

Publications (1)

Publication Number Publication Date
AU2001296281A1 true AU2001296281A1 (en) 2002-04-02

Family

ID=22880081

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296281A Abandoned AU2001296281A1 (en) 2000-09-21 2001-09-21 Integrated thin film capacitor/inductor/interconnect system and method

Country Status (3)

Country Link
US (1) US6761963B2 (en)
AU (1) AU2001296281A1 (en)
WO (1) WO2002025709A2 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327582B2 (en) * 2000-09-21 2008-02-05 Ultrasource, Inc. Integrated thin film capacitor/inductor/interconnect system and method
US7425877B2 (en) * 2001-09-21 2008-09-16 Ultrasource, Inc. Lange coupler system and method
US6998696B2 (en) * 2001-09-21 2006-02-14 Casper Michael D Integrated thin film capacitor/inductor/interconnect system and method
AT500259B1 (en) * 2003-09-09 2007-08-15 Austria Tech & System Tech THIN-LAYER ASSEMBLY AND METHOD FOR PRODUCING SUCH A THIN-LAYER ASSEMBLY
JP4610205B2 (en) * 2004-02-18 2011-01-12 株式会社リコー Semiconductor device
US7282404B2 (en) 2004-06-01 2007-10-16 International Business Machines Corporation Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme
US7535080B2 (en) * 2005-06-30 2009-05-19 Intel Corporation Reducing parasitic mutual capacitances
US7483274B2 (en) * 2005-09-29 2009-01-27 Welch Allyn, Inc. Galvanic isolation of a signal using capacitive coupling embedded within a circuit board
US8669637B2 (en) * 2005-10-29 2014-03-11 Stats Chippac Ltd. Integrated passive device system
US8409970B2 (en) 2005-10-29 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of making integrated passive devices
US8791006B2 (en) 2005-10-29 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming an inductor on polymer matrix composite substrate
US8158510B2 (en) 2009-11-19 2012-04-17 Stats Chippac, Ltd. Semiconductor device and method of forming IPD on molded substrate
US7851257B2 (en) * 2005-10-29 2010-12-14 Stats Chippac Ltd. Integrated circuit stacking system with integrated passive components
JP2007150282A (en) * 2005-11-02 2007-06-14 Sharp Corp Field-effect transistor
US8188590B2 (en) 2006-03-30 2012-05-29 Stats Chippac Ltd. Integrated circuit package system with post-passivation interconnection and integration
US7755164B1 (en) * 2006-06-21 2010-07-13 Amkor Technology, Inc. Capacitor and resistor having anodic metal and anodic metal oxide structure
US20090223700A1 (en) * 2008-03-05 2009-09-10 Honeywell International Inc. Thin flexible circuits
WO2009140658A1 (en) * 2008-05-15 2009-11-19 Kovio, Inc. Surveillance devices with multiple capacitors
US8756778B2 (en) * 2009-10-01 2014-06-24 Stmicroelectronics Sa Method of adjustment during manufacture of a circuit having a capacitor
US9450556B2 (en) * 2009-10-16 2016-09-20 Avx Corporation Thin film surface mount components
KR101101686B1 (en) * 2010-01-07 2011-12-30 삼성전기주식회사 Rf semiconductor component and method of fabricating the same
JP5711953B2 (en) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ Plasma processing equipment
US8853819B2 (en) 2011-01-07 2014-10-07 Advanced Semiconductor Engineering, Inc. Semiconductor structure with passive element network and manufacturing method thereof
US8912890B2 (en) 2012-10-01 2014-12-16 Thin Film Electronics Asa Surveillance devices with multiple capacitors
US20140268440A1 (en) * 2013-03-12 2014-09-18 Wisenstech Inc. Micromachined High Breakdown Voltage ESD Protection Device for Light Emitting Diode and Method of Making the Same
US9548288B1 (en) * 2014-12-22 2017-01-17 Apple Inc. Integrated circuit die decoupling system with reduced inductance
JP2016162904A (en) * 2015-03-03 2016-09-05 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method
US9455189B1 (en) 2015-06-14 2016-09-27 Darryl G. Walker Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture
US10833144B2 (en) 2016-11-14 2020-11-10 Advanced Semiconductor Engineering, Inc. Semiconductor device packages including an inductor and a capacitor
JP2022067321A (en) * 2020-10-20 2022-05-06 東京エレクトロン株式会社 Plasma generation device, plasma processing device, and plasma processing method
CN113284885A (en) * 2021-05-14 2021-08-20 广州天极电子科技股份有限公司 Method for integrating thin film capacitor in thin film circuit

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553693A (en) 1967-12-14 1971-01-05 Texas Instruments Inc Modular electronics communication system
SU470249A1 (en) 1972-12-20 1976-08-05 Предприятие П/Я Г-4515 Chip
US3969197A (en) 1974-02-08 1976-07-13 Texas Instruments Incorporated Method for fabricating a thin film capacitor
US4016050A (en) * 1975-05-12 1977-04-05 Bell Telephone Laboratories, Incorporated Conduction system for thin film and hybrid integrated circuits
US4002542A (en) 1976-02-09 1977-01-11 Corning Glass Works Thin film capacitor and method
US4038167A (en) 1976-02-09 1977-07-26 Corning Glass Works Method of forming a thin film capacitor
US4062749A (en) 1976-02-09 1977-12-13 Corning Glass Works Method of forming a thin film capacitor with a manganese dioxide layer
US4002545A (en) 1976-02-09 1977-01-11 Corning Glass Works Method of forming a thin film capacitor
US4410867A (en) 1978-12-28 1983-10-18 Western Electric Company, Inc. Alpha tantalum thin film circuit device
EP0024863B1 (en) 1979-08-31 1983-05-25 Fujitsu Limited A tantalum thin film capacitor and process for producing the same
US4408254A (en) 1981-11-18 1983-10-04 International Business Machines Corporation Thin film capacitors
US4628149A (en) * 1981-11-30 1986-12-09 Nippon Electric Co., Ltd. Substrate having a pattern of an alloy of gold and a noble and a base metal with the pattern isolated by oxides of the noble and the base metals
US4423087A (en) 1981-12-28 1983-12-27 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US4471405A (en) 1981-12-28 1984-09-11 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US4599678A (en) 1985-03-19 1986-07-08 Wertheimer Michael R Plasma-deposited capacitor dielectrics
US4631633A (en) 1985-12-23 1986-12-23 North American Philips Corporation Thin film capacitors and method of making the same
DE69014027T2 (en) 1989-08-30 1995-06-01 Nec Corp Thin film capacitors and their manufacturing processes.
US5262920A (en) 1991-05-16 1993-11-16 Nec Corporation Thin film capacitor
JPH05326315A (en) 1992-05-25 1993-12-10 Itochu Fine Chem Kk Thin film capacitor and manufacturing device thereof
JP2884917B2 (en) 1992-06-08 1999-04-19 日本電気株式会社 Thin film capacitors and integrated circuits
US5390072A (en) 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
US5587870A (en) 1992-09-17 1996-12-24 Research Foundation Of State University Of New York Nanocrystalline layer thin film capacitors
JP2788835B2 (en) 1993-03-17 1998-08-20 日本電気株式会社 Thin film capacitor and method of manufacturing the same
US5367284A (en) 1993-05-10 1994-11-22 Texas Instruments Incorporated Thin film resistor and method for manufacturing the same
US5643804A (en) 1993-05-21 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a hybrid integrated circuit component having a laminated body
US5338950A (en) 1993-08-23 1994-08-16 Itt Corporation Multiple port thin film capacitor
US5767564A (en) 1993-10-19 1998-06-16 Kyocera Corporation Semiconductor device with a decoupling capacitor mounted thereon having a thermal expansion coefficient matched to the device
US5455064A (en) 1993-11-12 1995-10-03 Fujitsu Limited Process for fabricating a substrate with thin film capacitor and insulating plug
US5760432A (en) 1994-05-20 1998-06-02 Kabushiki Kaisha Toshiba Thin film strained layer ferroelectric capacitors
GB9414362D0 (en) * 1994-07-15 1994-09-07 Plessey Semiconductors Ltd Trimmable capacitor
JP3407409B2 (en) 1994-07-27 2003-05-19 富士通株式会社 Manufacturing method of high dielectric constant thin film
JPH0855967A (en) 1994-07-29 1996-02-27 Texas Instr Inc <Ti> Manufacture of ferroelectric thin film capacitor
JPH08115851A (en) 1994-10-14 1996-05-07 Ngk Spark Plug Co Ltd Ceramic substrate with thin-film capacitor and its manufacturing method
US5683928A (en) 1994-12-05 1997-11-04 General Electric Company Method for fabricating a thin film resistor
KR100190558B1 (en) 1995-03-04 1999-10-15 구본준 Ferroelectric and capacitor of semiconductor device
US5883781A (en) 1995-04-19 1999-03-16 Nec Corporation Highly-integrated thin film capacitor with high dielectric constant layer
US5708302A (en) 1995-04-26 1998-01-13 Symetrix Corporation Bottom electrode structure for dielectric capacitors
US5693595A (en) 1995-06-06 1997-12-02 Northrop Grumman Corporation Integrated thin-film terminations for high temperature superconducting microwave components
JP4003888B2 (en) 1995-06-06 2007-11-07 旭化成エレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
JP3076507B2 (en) 1995-06-13 2000-08-14 松下電子工業株式会社 Semiconductor device, semiconductor integrated circuit device, and method of manufacturing the same
US5781081A (en) 1995-09-01 1998-07-14 Ngk Spark Plug Co., Ltd. LC-type dielectric filter having an inductor on the outermost layer and frequency adjusting method therefor
US5699224A (en) 1995-10-25 1997-12-16 Rohm Co., Ltd. Thick-film capacitor and chip-type composite electronic component utilizing the same
IT1279080B1 (en) 1995-11-29 1997-12-04 Sits Soc It Telecom Siemens THIN FILM CIRCUITS MANUFACTURING PROCESS INCLUDING INTEGRATED CAPACITORS
US5736448A (en) 1995-12-04 1998-04-07 General Electric Company Fabrication method for thin film capacitors
US5737179A (en) 1996-02-07 1998-04-07 Catalina Coatings, Inc. Metallized film capacitor
KR100228038B1 (en) 1996-02-22 1999-11-01 니시무로 타이죠 A thin film capacitor
US6023408A (en) 1996-04-09 2000-02-08 The Board Of Trustees Of The University Of Arkansas Floating plate capacitor with extremely wide band low impedance
JPH09331020A (en) 1996-06-07 1997-12-22 Sharp Corp Dielectric thin film capacitor element and its manufacture
US5745335A (en) 1996-06-27 1998-04-28 Gennum Corporation Multi-layer film capacitor structures and method
KR100326979B1 (en) 1996-12-18 2002-05-10 포만 제프리 엘 Metal to metal capacitor and method for producing same
US5912044A (en) 1997-01-10 1999-06-15 International Business Machines Corporation Method for forming thin film capacitors
US5936831A (en) 1997-03-06 1999-08-10 Lucent Technologies Inc. Thin film tantalum oxide capacitors and resulting product
US6075691A (en) 1997-03-06 2000-06-13 Lucent Technologies Inc. Thin film capacitors and process for making them
SE520173C2 (en) * 1997-04-29 2003-06-03 Ericsson Telefon Ab L M Process for manufacturing a capacitor in an integrated circuit
US5982018A (en) 1997-05-23 1999-11-09 Micron Technology, Inc. Thin film capacitor coupons for memory modules and multi-chip modules
JPH10335590A (en) 1997-06-04 1998-12-18 Nec Corp Passive element circuit
US6236101B1 (en) * 1997-11-05 2001-05-22 Texas Instruments Incorporated Metallization outside protective overcoat for improved capacitors and inductors
US5915188A (en) * 1997-12-22 1999-06-22 Motorola, Inc. Integrated inductor and capacitor on a substrate and method for fabricating same
US6023407A (en) 1998-02-26 2000-02-08 International Business Machines Corporation Structure for a thin film multilayer capacitor
DE19903500A1 (en) 1999-01-29 2000-08-03 Philips Corp Intellectual Pty Thin film circuit with component
JP3585796B2 (en) * 1999-12-17 2004-11-04 新光電気工業株式会社 Multilayer wiring board manufacturing method and semiconductor device

Also Published As

Publication number Publication date
WO2002025709A2 (en) 2002-03-28
US6761963B2 (en) 2004-07-13
WO2002025709A3 (en) 2003-01-09
US20020089810A1 (en) 2002-07-11

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