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Priority to TW085106066ApriorityCriticalpatent/TW343371B/en
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A method for forming a polysilicon electrode for use within a polysilicon capacitor comprising: forming upon a semiconductor substrate a polysilicon layer; forming upon the polysilicon layer an amorphous silicon layer; forming upon the amorphous silicon layer a metal layer, the metal layer being formed from a metal from which a metal silicide is formed; and annealing the metal layer and the amorphous silicon layer to form the metal silicide, where the thickness of the metal layer and the thickness of the amorphous silicon layer are chosen to form a stoichiometric metal silicide with minimal consumption of the polysilicon layer.
TW085106066A1996-05-221996-05-22Low voltage coefficient polysilicon capacitor
TW343371B
(en)