TW375841B - Field effect type transistors - Google Patents
Field effect type transistorsInfo
- Publication number
- TW375841B TW375841B TW087100752A TW87100752A TW375841B TW 375841 B TW375841 B TW 375841B TW 087100752 A TW087100752 A TW 087100752A TW 87100752 A TW87100752 A TW 87100752A TW 375841 B TW375841 B TW 375841B
- Authority
- TW
- Taiwan
- Prior art keywords
- doped
- layer
- field effect
- effect type
- type transistors
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7784—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with delta or planar doped donor layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9050618A JPH10247727A (ja) | 1997-03-05 | 1997-03-05 | 電界効果型トランジスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
TW375841B true TW375841B (en) | 1999-12-01 |
Family
ID=12863974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087100752A TW375841B (en) | 1997-03-05 | 1998-01-21 | Field effect type transistors |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0863554B1 (zh) |
JP (1) | JPH10247727A (zh) |
KR (1) | KR19980079943A (zh) |
CN (1) | CN1155099C (zh) |
CA (1) | CA2231206A1 (zh) |
DE (1) | DE69808161T2 (zh) |
ES (1) | ES2184155T3 (zh) |
TW (1) | TW375841B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6462361B1 (en) | 1995-12-27 | 2002-10-08 | Showa Denko K.K. | GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure |
TW522574B (en) * | 1999-09-28 | 2003-03-01 | Showa Denko Kk | GaInP epitaxial stacking structure, a GaInP epitaxial stacking structure for FETs and a fabrication method thereof |
US7297977B2 (en) * | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7465972B2 (en) * | 2005-01-21 | 2008-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance CMOS device design |
JP5495069B2 (ja) * | 2011-05-17 | 2014-05-21 | 古河電気工業株式会社 | 半導体素子及びその製造方法 |
WO2013001676A1 (ja) * | 2011-06-30 | 2013-01-03 | パナソニック株式会社 | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
US8941123B2 (en) * | 2013-05-30 | 2015-01-27 | International Business Machines Corporation | Local interconnects by metal-III-V alloy wiring in semi-insulating III-V substrates |
JP6507912B2 (ja) | 2015-07-30 | 2019-05-08 | 三菱電機株式会社 | 半導体受光素子 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0666334B2 (ja) * | 1987-02-10 | 1994-08-24 | 日本電気株式会社 | 電界効果トランジスタ |
JPS63278277A (ja) * | 1987-05-09 | 1988-11-15 | Fujitsu Ltd | 化合物半導体装置 |
JPH01233776A (ja) * | 1988-03-14 | 1989-09-19 | Nec Corp | ヘテロ接合電界効果トランジスタ |
JPH01256176A (ja) * | 1988-04-05 | 1989-10-12 | Fujitsu Ltd | 化合物半導体装置 |
JPH02150038A (ja) * | 1988-11-30 | 1990-06-08 | Sharp Corp | 変調ドープ電界効果トランジスタ |
JPH04369842A (ja) * | 1991-06-19 | 1992-12-22 | Matsushita Electric Ind Co Ltd | ヘテロ接合電界効果トランジスタ |
JP2611735B2 (ja) * | 1993-12-22 | 1997-05-21 | 日本電気株式会社 | ヘテロ接合fet |
US5856685A (en) * | 1995-02-22 | 1999-01-05 | Nec Corporation | Heterojunction field effect transistor |
-
1997
- 1997-03-05 JP JP9050618A patent/JPH10247727A/ja active Pending
-
1998
- 1998-01-21 TW TW087100752A patent/TW375841B/zh not_active IP Right Cessation
- 1998-02-20 CN CNB981008402A patent/CN1155099C/zh not_active Expired - Fee Related
- 1998-03-03 CA CA002231206A patent/CA2231206A1/en not_active Abandoned
- 1998-03-04 EP EP98103825A patent/EP0863554B1/en not_active Expired - Lifetime
- 1998-03-04 ES ES98103825T patent/ES2184155T3/es not_active Expired - Lifetime
- 1998-03-04 DE DE69808161T patent/DE69808161T2/de not_active Expired - Fee Related
- 1998-03-05 KR KR1019980007293A patent/KR19980079943A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH10247727A (ja) | 1998-09-14 |
EP0863554A3 (en) | 1998-12-30 |
EP0863554B1 (en) | 2002-09-25 |
DE69808161T2 (de) | 2003-01-30 |
CN1155099C (zh) | 2004-06-23 |
EP0863554A2 (en) | 1998-09-09 |
ES2184155T3 (es) | 2003-04-01 |
CA2231206A1 (en) | 1998-09-05 |
DE69808161D1 (de) | 2002-10-31 |
KR19980079943A (ko) | 1998-11-25 |
CN1192587A (zh) | 1998-09-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |