TW373330B - Method of manufacturing semiconductor articles - Google Patents

Method of manufacturing semiconductor articles

Info

Publication number
TW373330B
TW373330B TW086117026A TW86117026A TW373330B TW 373330 B TW373330 B TW 373330B TW 086117026 A TW086117026 A TW 086117026A TW 86117026 A TW86117026 A TW 86117026A TW 373330 B TW373330 B TW 373330B
Authority
TW
Taiwan
Prior art keywords
substrate
silicon layer
forming
porous silicon
diffusion region
Prior art date
Application number
TW086117026A
Other languages
English (en)
Inventor
Kiyofumi Sakaguchi
Takao Yonehara
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of TW373330B publication Critical patent/TW373330B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW086117026A 1996-11-15 1997-11-14 Method of manufacturing semiconductor articles TW373330B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30454096 1996-11-15

Publications (1)

Publication Number Publication Date
TW373330B true TW373330B (en) 1999-11-01

Family

ID=17934239

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117026A TW373330B (en) 1996-11-15 1997-11-14 Method of manufacturing semiconductor articles

Country Status (11)

Country Link
US (1) US6100165A (zh)
EP (1) EP0843345B1 (zh)
KR (1) KR100282111B1 (zh)
CN (1) CN1123915C (zh)
AT (1) ATE263429T1 (zh)
AU (1) AU745460B2 (zh)
CA (1) CA2221245C (zh)
DE (1) DE69728355T2 (zh)
MY (1) MY115115A (zh)
SG (1) SG55413A1 (zh)
TW (1) TW373330B (zh)

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US6540861B2 (en) 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
US6180497B1 (en) * 1998-07-23 2001-01-30 Canon Kabushiki Kaisha Method for producing semiconductor base members
EP0989593A3 (en) * 1998-09-25 2002-01-02 Canon Kabushiki Kaisha Substrate separating apparatus and method, and substrate manufacturing method
JP2000150836A (ja) 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
US6672358B2 (en) 1998-11-06 2004-01-06 Canon Kabushiki Kaisha Sample processing system
TW484184B (en) 1998-11-06 2002-04-21 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
JP4343295B2 (ja) * 1998-11-06 2009-10-14 キヤノン株式会社 試料の処理システム
US6375738B1 (en) 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
KR100434537B1 (ko) * 1999-03-31 2004-06-05 삼성전자주식회사 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법
JP2001007362A (ja) * 1999-06-17 2001-01-12 Canon Inc 半導体基材および太陽電池の製造方法
JP2001160540A (ja) * 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
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JP2002353423A (ja) 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
US6736986B2 (en) * 2001-09-20 2004-05-18 Heliovolt Corporation Chemical synthesis of layers, coatings or films using surfactants
FR2834820B1 (fr) * 2002-01-16 2005-03-18 Procede de clivage de couches d'une tranche de materiau
JP2004103600A (ja) * 2002-09-04 2004-04-02 Canon Inc 基板及びその製造方法
TWI242796B (en) * 2002-09-04 2005-11-01 Canon Kk Substrate and manufacturing method therefor
JP2004103855A (ja) * 2002-09-10 2004-04-02 Canon Inc 基板及びその製造方法
JP2004103946A (ja) * 2002-09-11 2004-04-02 Canon Inc 基板及びその製造方法
JP2004335662A (ja) * 2003-05-06 2004-11-25 Canon Inc 部材及び部材の製造方法
FR2858715B1 (fr) * 2003-08-04 2005-12-30 Soitec Silicon On Insulator Procede de detachement de couche de semiconducteur
US20050082526A1 (en) * 2003-10-15 2005-04-21 International Business Machines Corporation Techniques for layer transfer processing
FR2865574B1 (fr) * 2004-01-26 2006-04-07 Soitec Silicon On Insulator Procede de fabrication d'un substrat demontable
JP4771510B2 (ja) * 2004-06-23 2011-09-14 キヤノン株式会社 半導体層の製造方法及び基板の製造方法
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US20070111468A1 (en) * 2005-07-19 2007-05-17 The Regents Of The University Of California Method for fabricating dislocation-free stressed thin films
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US8624357B2 (en) * 2008-08-28 2014-01-07 The Regents Of The University Of California Composite semiconductor substrates for thin-film device layer transfer
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AU2010211053A1 (en) * 2009-02-04 2010-08-12 Heliovolt Corporation Method of forming an indium-containing transparent conductive oxide film, metal targets used in the method and photovoltaic devices utilizing said films
US20100310770A1 (en) * 2009-06-05 2010-12-09 Baosheng Sang Process for synthesizing a thin film or composition layer via non-contact pressure containment
US8256621B2 (en) * 2009-09-11 2012-09-04 Pro-Pak Industries, Inc. Load tray and method for unitizing a palletized load
US8021641B2 (en) * 2010-02-04 2011-09-20 Alliance For Sustainable Energy, Llc Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom
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CN102157618A (zh) * 2011-01-30 2011-08-17 中国科学院宁波材料技术与工程研究所 一种低成本晶体硅太阳能电池的扩散方法
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9064789B2 (en) * 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
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Also Published As

Publication number Publication date
EP0843345B1 (en) 2004-03-31
ATE263429T1 (de) 2004-04-15
KR100282111B1 (ko) 2001-02-15
DE69728355T2 (de) 2004-09-09
KR19980042474A (ko) 1998-08-17
CN1188981A (zh) 1998-07-29
SG55413A1 (en) 1998-12-21
CN1123915C (zh) 2003-10-08
EP0843345A3 (en) 1998-07-08
MY115115A (en) 2003-03-31
CA2221245A1 (en) 1998-05-15
AU745460B2 (en) 2002-03-21
AU4517397A (en) 1998-05-21
CA2221245C (en) 2002-02-19
US6100165A (en) 2000-08-08
EP0843345A2 (en) 1998-05-20
DE69728355D1 (de) 2004-05-06

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees