GB9025236D0 - Silicon-on porous-silicon;method of production - Google Patents

Silicon-on porous-silicon;method of production

Info

Publication number
GB9025236D0
GB9025236D0 GB9025236A GB9025236A GB9025236D0 GB 9025236 D0 GB9025236 D0 GB 9025236D0 GB 9025236 A GB9025236 A GB 9025236A GB 9025236 A GB9025236 A GB 9025236A GB 9025236 D0 GB9025236 D0 GB 9025236D0
Authority
GB
Grant status
Application
Patent type
Prior art keywords
silicon
porous
production
method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB9025236A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76245Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00Coating apparatus
    • Y10S118/01Anti-offset
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00Coating apparatus
    • Y10S118/03Container-related coater
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/96Porous semiconductor
GB9025236A 1990-11-20 1990-11-20 Silicon-on porous-silicon;method of production Pending GB9025236D0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9025236A GB9025236D0 (en) 1990-11-20 1990-11-20 Silicon-on porous-silicon;method of production

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
GB9025236A GB9025236D0 (en) 1990-11-20 1990-11-20 Silicon-on porous-silicon;method of production
CA 2094237 CA2094237A1 (en) 1990-11-20 1991-11-18 Silicon-on-porous-silicon, method of production and material
DE1991633183 DE69133183T2 (en) 1990-11-20 1991-11-18 Silicon on porous silicon, methods for making and product-
JP51811791A JP3143473B2 (en) 1990-11-20 1991-11-18 Silicon on porous silicon; manufacturing methods and materials
EP19910920076 EP0558554B1 (en) 1990-11-20 1991-11-18 Silicon-on-porous-silicon; method of production and material
AT91920076T AT230161T (en) 1990-11-20 1991-11-18 Silicon on porous silicon, methods for making and product-
DE1991633183 DE69133183D1 (en) 1990-11-20 1991-11-18 Silicon on porous silicon, methods for making and product-
US08050401 US5387541A (en) 1990-11-20 1991-11-18 Method of making silicon-on-porous-silicon by ion implantation
PCT/GB1991/002029 WO1992009104A1 (en) 1990-11-20 1991-11-18 Silicon-on-porous-silicon; method of production and material
GB9307147A GB2271465B (en) 1990-11-20 1993-04-06 Silicon-on-porous-silicon;method of production and material

Publications (1)

Publication Number Publication Date
GB9025236D0 true true GB9025236D0 (en) 1991-01-02

Family

ID=10685692

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9025236A Pending GB9025236D0 (en) 1990-11-20 1990-11-20 Silicon-on porous-silicon;method of production
GB9307147A Expired - Fee Related GB2271465B (en) 1990-11-20 1993-04-06 Silicon-on-porous-silicon;method of production and material

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9307147A Expired - Fee Related GB2271465B (en) 1990-11-20 1993-04-06 Silicon-on-porous-silicon;method of production and material

Country Status (7)

Country Link
US (1) US5387541A (en)
EP (1) EP0558554B1 (en)
JP (1) JP3143473B2 (en)
CA (1) CA2094237A1 (en)
DE (2) DE69133183D1 (en)
GB (2) GB9025236D0 (en)
WO (1) WO1992009104A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
JP3352340B2 (en) * 1995-10-06 2002-12-03 キヤノン株式会社 Semiconductor substrate and a method of manufacturing the same
WO1999001893A8 (en) * 1997-06-30 1999-07-22 Max Planck Gesellschaft Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
DE19802131B4 (en) * 1998-01-21 2007-03-15 Robert Bosch Gmbh A process for preparing a monocrystalline layer of a conductive or semi-conductive material
US6197654B1 (en) * 1998-08-21 2001-03-06 Texas Instruments Incorporated Lightly positively doped silicon wafer anodization process
US6717212B2 (en) * 2001-06-12 2004-04-06 Advanced Micro Devices, Inc. Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure
KR20030064536A (en) * 2002-01-28 2003-08-02 텔레포스 주식회사 High frequency device using oxidized porous silicon layer
CA2487859A1 (en) * 2002-05-29 2004-05-13 The Board Of Trustees Of The Leland Stanford Junior Unversity Solid oxide electrolyte with ion conductivity enhancement by dislocation
US6908833B1 (en) * 2003-02-14 2005-06-21 National Semiconductor Corporation Shallow self isolated doped implanted silicon process
US7566482B2 (en) * 2003-09-30 2009-07-28 International Business Machines Corporation SOI by oxidation of porous silicon
KR100773555B1 (en) * 2006-07-21 2007-11-06 삼성전자주식회사 Semiconductor substrate having low defects and method of manufacturing the same
WO2016126987A1 (en) 2015-02-04 2016-08-11 Twist Bioscience Corporation Compositions and methods for synthetic gene assembly
US9899274B2 (en) 2015-03-16 2018-02-20 International Business Machines Corporation Low-cost SOI FinFET technology
US9981239B2 (en) 2015-04-21 2018-05-29 Twist Bioscience Corporation Devices and methods for oligonucleic acid library synthesis
CA3006867A1 (en) 2015-12-01 2017-06-08 Twist Bioscience Corporation Functionalized surfaces and preparation thereof
WO2018038772A1 (en) 2016-08-22 2018-03-01 Twist Bioscience Corporation De novo synthesized nucleic acid libraries

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE220812C (en) *
JPS56648A (en) * 1979-06-14 1981-01-07 Shibaura Denshi Seisakusho:Kk Humidity measuring method
JPS61177744A (en) * 1985-02-01 1986-08-09 Toko Inc Manufacture of semiconductor ic substrate
FR2620571B1 (en) * 1987-09-11 1990-01-12 France Etat Method of fabricating a silicon on insulator structure
US5238858A (en) * 1988-10-31 1993-08-24 Sharp Kabushiki Kaisha Ion implantation method
US5023200A (en) * 1988-11-22 1991-06-11 The United States Of America As Represented By The United States Department Of Energy Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Also Published As

Publication number Publication date Type
WO1992009104A1 (en) 1992-05-29 application
EP0558554A1 (en) 1993-09-08 application
GB2271465B (en) 1994-10-26 grant
JPH06502280A (en) 1994-03-10 application
GB2271465A (en) 1994-04-13 application
DE69133183D1 (en) 2003-01-30 grant
GB9307147D0 (en) 1993-06-09 application
EP0558554B1 (en) 2002-12-18 grant
CA2094237A1 (en) 1992-05-21 application
JP3143473B2 (en) 2001-03-07 grant
DE69133183T2 (en) 2003-08-21 grant
US5387541A (en) 1995-02-07 grant

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