GB9025236D0 - Silicon-on porous-silicon;method of production - Google Patents

Silicon-on porous-silicon;method of production

Info

Publication number
GB9025236D0
GB9025236D0 GB9025236A GB9025236A GB9025236D0 GB 9025236 D0 GB9025236 D0 GB 9025236D0 GB 9025236 A GB9025236 A GB 9025236A GB 9025236 A GB9025236 A GB 9025236A GB 9025236 D0 GB9025236 D0 GB 9025236D0
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
silicon
porous
method
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB9025236A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Kingdom Secretary of State for Defence
Original Assignee
United Kingdom Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

GB9025236A 1990-11-20 1990-11-20 Silicon-on porous-silicon;method of production Pending GB9025236D0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9025236A GB9025236D0 (en) 1990-11-20 1990-11-20 Silicon-on porous-silicon;method of production

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
GB9025236A GB9025236D0 (en) 1990-11-20 1990-11-20 Silicon-on porous-silicon;method of production
CA 2094237 CA2094237A1 (en) 1990-11-20 1991-11-18 Silicon-on-porous-silicon, method of production and material
DE1991633183 DE69133183T2 (en) 1990-11-20 1991-11-18 Silicon on porous silicon, methods for making and product-
JP51811791A JP3143473B2 (en) 1990-11-20 1991-11-18 Silicon on porous silicon; manufacturing methods and materials
EP19910920076 EP0558554B1 (en) 1990-11-20 1991-11-18 Silicon-on-porous-silicon; method of production and material
DE1991633183 DE69133183D1 (en) 1990-11-20 1991-11-18 Silicon on porous silicon, methods for making and product-
US08050401 US5387541A (en) 1990-11-20 1991-11-18 Method of making silicon-on-porous-silicon by ion implantation
PCT/GB1991/002029 WO1992009104A1 (en) 1990-11-20 1991-11-18 Silicon-on-porous-silicon; method of production and material
GB9307147A GB2271465B (en) 1990-11-20 1993-04-06 Silicon-on-porous-silicon;method of production and material

Publications (1)

Publication Number Publication Date
GB9025236D0 true GB9025236D0 (en) 1991-01-02

Family

ID=10685692

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9025236A Pending GB9025236D0 (en) 1990-11-20 1990-11-20 Silicon-on porous-silicon;method of production
GB9307147A Expired - Fee Related GB2271465B (en) 1990-11-20 1993-04-06 Silicon-on-porous-silicon;method of production and material

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9307147A Expired - Fee Related GB2271465B (en) 1990-11-20 1993-04-06 Silicon-on-porous-silicon;method of production and material

Country Status (7)

Country Link
US (1) US5387541A (en)
EP (1) EP0558554B1 (en)
JP (1) JP3143473B2 (en)
CA (1) CA2094237A1 (en)
DE (2) DE69133183D1 (en)
GB (2) GB9025236D0 (en)
WO (1) WO1992009104A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
JP3352340B2 (en) * 1995-10-06 2002-12-03 キヤノン株式会社 Semiconductor substrate and a method of manufacturing the same
CN1123915C (en) * 1996-11-15 2003-10-08 佳能株式会社 Method of mfg. semiconductor article
WO1999001893A8 (en) * 1997-06-30 1999-07-22 Max Planck Gesellschaft Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
DE19802131B4 (en) * 1998-01-21 2007-03-15 Robert Bosch Gmbh A process for preparing a monocrystalline layer of a conductive or semi-conductive material
US6197654B1 (en) * 1998-08-21 2001-03-06 Texas Instruments Incorporated Lightly positively doped silicon wafer anodization process
WO2002045146A1 (en) * 2000-11-30 2002-06-06 Telephus, Inc. Fabrication method of selectively oxidized porous silicon (sops) layer and multi-chip package using the same
US6717212B2 (en) * 2001-06-12 2004-04-06 Advanced Micro Devices, Inc. Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure
KR20030064536A (en) * 2002-01-28 2003-08-02 텔레포스 주식회사 High frequency device using oxidized porous silicon layer
CA2487859A1 (en) * 2002-05-29 2004-05-13 The Board Of Trustees Of The Leland Stanford Junior Unversity Solid oxide electrolyte with ion conductivity enhancement by dislocation
US6908833B1 (en) * 2003-02-14 2005-06-21 National Semiconductor Corporation Shallow self isolated doped implanted silicon process
US7566482B2 (en) * 2003-09-30 2009-07-28 International Business Machines Corporation SOI by oxidation of porous silicon
KR100773555B1 (en) * 2006-07-21 2007-11-06 삼성전자주식회사 Semiconductor substrate having low defects and method of manufacturing the same
CN105637097A (en) 2013-08-05 2016-06-01 特韦斯特生物科学公司 De novo synthesized gene libraries
WO2016126987A1 (en) 2015-02-04 2016-08-11 Twist Bioscience Corporation Compositions and methods for synthetic gene assembly
US9899274B2 (en) 2015-03-16 2018-02-20 International Business Machines Corporation Low-cost SOI FinFET technology
US9981239B2 (en) 2015-04-21 2018-05-29 Twist Bioscience Corporation Devices and methods for oligonucleic acid library synthesis
CA3006867A1 (en) 2015-12-01 2017-06-08 Twist Bioscience Corporation Functionalized surfaces and preparation thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE220812C (en) *
JPS56648A (en) * 1979-06-14 1981-01-07 Shibaura Denshi Seisakusho:Kk Humidity measuring method
JPS61177744A (en) * 1985-02-01 1986-08-09 Toko Inc Manufacture of semiconductor ic substrate
FR2620571B1 (en) * 1987-09-11 1990-01-12 France Etat Method of fabricating a silicon on insulator structure
US5238858A (en) * 1988-10-31 1993-08-24 Sharp Kabushiki Kaisha Ion implantation method
US5023200A (en) * 1988-11-22 1991-06-11 The United States Of America As Represented By The United States Department Of Energy Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Also Published As

Publication number Publication date Type
WO1992009104A1 (en) 1992-05-29 application
EP0558554A1 (en) 1993-09-08 application
GB2271465B (en) 1994-10-26 grant
JPH06502280A (en) 1994-03-10 application
GB2271465A (en) 1994-04-13 application
DE69133183D1 (en) 2003-01-30 grant
GB9307147D0 (en) 1993-06-09 grant
EP0558554B1 (en) 2002-12-18 grant
CA2094237A1 (en) 1992-05-21 application
JP3143473B2 (en) 2001-03-07 grant
DE69133183T2 (en) 2003-08-21 grant
US5387541A (en) 1995-02-07 grant

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