TW370568B - Ta sputtering targets, method of manufacturing the same, and assemblies - Google Patents

Ta sputtering targets, method of manufacturing the same, and assemblies

Info

Publication number
TW370568B
TW370568B TW087114041A TW87114041A TW370568B TW 370568 B TW370568 B TW 370568B TW 087114041 A TW087114041 A TW 087114041A TW 87114041 A TW87114041 A TW 87114041A TW 370568 B TW370568 B TW 370568B
Authority
TW
Taiwan
Prior art keywords
ppm
less
dispersion
target
manufacturing
Prior art date
Application number
TW087114041A
Other languages
English (en)
Inventor
Osamu Kano
Shuichi Irumata
Original Assignee
Japan Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Energy Corp filed Critical Japan Energy Corp
Application granted granted Critical
Publication of TW370568B publication Critical patent/TW370568B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW087114041A 1997-09-10 1998-08-26 Ta sputtering targets, method of manufacturing the same, and assemblies TW370568B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9261108A JPH1180942A (ja) 1997-09-10 1997-09-10 Taスパッタターゲットとその製造方法及び組立体

Publications (1)

Publication Number Publication Date
TW370568B true TW370568B (en) 1999-09-21

Family

ID=17357205

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087114041A TW370568B (en) 1997-09-10 1998-08-26 Ta sputtering targets, method of manufacturing the same, and assemblies

Country Status (4)

Country Link
EP (1) EP0902102A1 (zh)
JP (1) JPH1180942A (zh)
KR (1) KR19990029673A (zh)
TW (1) TW370568B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102356179A (zh) * 2009-05-22 2012-02-15 吉坤日矿日石金属株式会社 钽溅射靶
CN102471874A (zh) * 2009-08-11 2012-05-23 吉坤日矿日石金属株式会社 钽溅射靶
TWI593807B (zh) * 2015-07-27 2017-08-01 Hitachi Metals Ltd 靶材
CN109097713A (zh) * 2018-09-29 2018-12-28 中南大学 一种超细晶Ta材及其制备方法

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323055B1 (en) 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
JP3820787B2 (ja) * 1999-01-08 2006-09-13 日鉱金属株式会社 スパッタリングターゲットおよびその製造方法
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
JP4519981B2 (ja) * 2000-03-15 2010-08-04 アルバックマテリアル株式会社 固相拡散接合スパッタリングターゲット組立て体及びその製造方法
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
JP2001303240A (ja) * 2000-04-26 2001-10-31 Toshiba Corp スパッタリングターゲット
IL156802A0 (en) 2001-01-11 2004-02-08 Cabot Corp Tantalum and niobium billets and methods of producing same
JP4817536B2 (ja) * 2001-06-06 2011-11-16 株式会社東芝 スパッタターゲット
JP4883546B2 (ja) 2002-09-20 2012-02-22 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲットの製造方法
JP4263900B2 (ja) 2002-11-13 2009-05-13 日鉱金属株式会社 Taスパッタリングターゲット及びその製造方法
CN100445420C (zh) * 2003-03-07 2008-12-24 日矿金属株式会社 铪合金靶及其制造方法
WO2004090193A1 (ja) * 2003-04-01 2004-10-21 Nikko Materials Co., Ltd. タンタルスパッタリングターゲット及びその製造方法
CN101857950B (zh) * 2003-11-06 2012-08-08 Jx日矿日石金属株式会社 钽溅射靶
US7832619B2 (en) 2004-02-27 2010-11-16 Howmet Corporation Method of making sputtering target
JP5126742B2 (ja) 2005-04-28 2013-01-23 Jx日鉱日石金属株式会社 スパッタリングターゲット
WO2007040014A1 (ja) 2005-10-04 2007-04-12 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット
US7837929B2 (en) 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
JP4974362B2 (ja) 2006-04-13 2012-07-11 株式会社アルバック Taスパッタリングターゲットおよびその製造方法
JP4714123B2 (ja) * 2006-10-30 2011-06-29 株式会社東芝 スパッタリングターゲット用高純度Ta材の製造方法
JP4582465B2 (ja) * 2007-12-26 2010-11-17 Jx日鉱日石金属株式会社 高純度ニッケル又はニッケル合金ターゲット及びその製造方法
KR20100116213A (ko) * 2008-02-29 2010-10-29 신닛테츠 마테리알즈 가부시키가이샤 금속계 스퍼터링 타겟재
WO2010051040A1 (en) * 2008-11-03 2010-05-06 Tosoh Smd, Inc. Method of making a sputter target and sputter targets made thereby
CN102575336B (zh) * 2009-08-11 2014-03-26 吉坤日矿日石金属株式会社 钽溅射靶
KR20150038585A (ko) * 2009-11-17 2015-04-08 가부시끼가이샤 도시바 탄탈 스퍼터링 타겟 및 탄탈 스퍼터링 타겟의 제조 방법 및 반도체 소자의 제조 방법
JP2011119330A (ja) * 2009-12-01 2011-06-16 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
US8449818B2 (en) 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
KR101291822B1 (ko) * 2010-07-30 2013-07-31 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃 및/또는 코일 그리고 이들의 제조 방법
EP2604719B1 (en) * 2010-08-09 2020-11-11 JX Nippon Mining & Metals Corporation Tantalum spattering target
EP2604718B1 (en) 2010-08-09 2015-03-18 JX Nippon Mining & Metals Corporation Tantalum sputtering target
JP5731770B2 (ja) * 2010-08-23 2015-06-10 株式会社東芝 スパッタリングターゲットの製造方法及びスパッタリングターゲット
JP5616265B2 (ja) * 2011-03-25 2014-10-29 Hoya株式会社 薄膜の成膜方法、マスクブランクの製造方法及び転写用マスクの製造方法
JP5291754B2 (ja) * 2011-04-15 2013-09-18 三井金属鉱業株式会社 太陽電池用スパッタリングターゲット
KR20160021299A (ko) 2011-05-10 2016-02-24 에이치. 씨. 스타아크 아이앤씨 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품
KR20140054203A (ko) 2011-11-30 2014-05-08 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃 및 그 제조 방법
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
JP5829757B2 (ja) * 2012-12-19 2015-12-09 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法
KR101950549B1 (ko) 2012-12-19 2019-02-20 제이엑스금속주식회사 탄탈 스퍼터링 타깃 및 그 제조 방법
CN104937133A (zh) * 2013-03-04 2015-09-23 吉坤日矿日石金属株式会社 钽溅射靶及其制造方法
JP5969138B2 (ja) * 2013-10-01 2016-08-17 Jx金属株式会社 タンタルスパッタリングターゲット
JP6009683B2 (ja) * 2014-03-27 2016-10-19 Jx金属株式会社 タンタルスパッタリングターゲット及びその製造方法
KR20170134365A (ko) 2015-04-10 2017-12-06 토소우 에스엠디, 인크 탄탈 스퍼터 타겟의 제조 방법 및 그에 의해 제조된 스퍼터 타겟
CN107532287B (zh) 2015-05-22 2019-11-05 捷客斯金属株式会社 钽溅射靶及其制造方法
JP6293929B2 (ja) 2015-05-22 2018-03-14 Jx金属株式会社 タンタルスパッタリングターゲット及びその製造方法
CN109154074B (zh) 2017-03-30 2020-11-24 Jx金属株式会社 钽溅射靶
JP6586540B1 (ja) * 2019-03-28 2019-10-02 Jx金属株式会社 ターゲット材とバッキングプレートとの接合体、および、ターゲット材とバッキングプレートとの接合体の製造方法
CN114015995B (zh) * 2021-11-10 2023-09-22 中国人民解放军军事科学院国防科技创新研究院 一种Nb-Ta-W多主元合金薄膜及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621346B2 (ja) * 1986-06-11 1994-03-23 日本鉱業株式会社 高純度金属タンタル製ターゲットの製造方法
JPS63216966A (ja) * 1987-03-06 1988-09-09 Toshiba Corp スパツタタ−ゲツト
JP3525348B2 (ja) * 1992-09-29 2004-05-10 株式会社日鉱マテリアルズ 拡散接合されたスパッタリングターゲット組立体の製造方法
JPH06264232A (ja) * 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ta製スパッタリングタ−ゲットとその製造方法
JP2738263B2 (ja) * 1993-04-23 1998-04-08 三菱マテリアル株式会社 マグネトロンスパッタリング用Tiターゲット材
JPH08269707A (ja) * 1995-03-31 1996-10-15 Sony Corp 成膜方法及び磁気ヘッドの製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102356179A (zh) * 2009-05-22 2012-02-15 吉坤日矿日石金属株式会社 钽溅射靶
CN102356179B (zh) * 2009-05-22 2013-10-30 吉坤日矿日石金属株式会社 钽溅射靶
CN102471874A (zh) * 2009-08-11 2012-05-23 吉坤日矿日石金属株式会社 钽溅射靶
CN102471874B (zh) * 2009-08-11 2014-09-17 吉坤日矿日石金属株式会社 钽溅射靶
TWI593807B (zh) * 2015-07-27 2017-08-01 Hitachi Metals Ltd 靶材
CN109097713A (zh) * 2018-09-29 2018-12-28 中南大学 一种超细晶Ta材及其制备方法

Also Published As

Publication number Publication date
KR19990029673A (ko) 1999-04-26
JPH1180942A (ja) 1999-03-26
EP0902102A1 (en) 1999-03-17

Similar Documents

Publication Publication Date Title
TW370568B (en) Ta sputtering targets, method of manufacturing the same, and assemblies
KR100633751B1 (ko) 두 가지 다른 색상들 사이의 색전이를 제공하는 광학 가변성 안료, 이것을 포함하는 코팅 조성물, 이것의 제조 방법 및 코팅 조성물로 코팅된 기재
EP1641722B1 (en) Corrosion-resistant low-emissivity coatings
GB2166162A (en) Multilayer coatings
EP0008328B1 (en) Amorphous magnetic films and a method of making such films
JP2790451B2 (ja) 窒素を含む軟磁性合金膜
Oelhafen et al. Photoemission (XPS, UPS) studies of Pd-Si metallic glasses
GB1464802A (en) Magnetic oxide film its preparation and uses
ES8900234A1 (es) Procedimiento para la fabricacion de un elemento de cojinete
DE3343107A1 (de) Magnetische aufzeichnungstraeger
JPS55141545A (en) Highly corrosion resistant ferrite stainless steel
KR900016972A (ko) 광기록매체 및 그 제조방법
JPS6457962A (en) Composite member for continuous casting
JPS5883327A (ja) 磁気記録媒体
Castle et al. Protective surface film characteristics of copper alloys in seawater
JPS54140505A (en) Production of magnetic recording medium
JPS57152517A (en) Magnetic recording medium
JPS6413217A (en) Magnetic recording medium and its production
JPS6459627A (en) Production of magnetic recording medium
CA2271654C (en) Composite stratified material and use thereof for coinage
EP0183120A2 (en) Magnetic recording member
JPS6450235A (en) Magnetic recording medium
JPS56148732A (en) Thin metallic film type magnetic recording medium
JPS6138151Y2 (zh)
Fnidiki et al. Magnetic and structural properties of Fe/Ti multilayer coatings