JP5696051B2 - スパッターターゲットを製造する方法 - Google Patents
スパッターターゲットを製造する方法 Download PDFInfo
- Publication number
- JP5696051B2 JP5696051B2 JP2011534527A JP2011534527A JP5696051B2 JP 5696051 B2 JP5696051 B2 JP 5696051B2 JP 2011534527 A JP2011534527 A JP 2011534527A JP 2011534527 A JP2011534527 A JP 2011534527A JP 5696051 B2 JP5696051 B2 JP 5696051B2
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- vacuum arc
- clock rolling
- axis
- arc remelting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005096 rolling process Methods 0.000 claims description 40
- 238000000137 annealing Methods 0.000 claims description 37
- 238000005242 forging Methods 0.000 claims description 35
- 230000009467 reduction Effects 0.000 claims description 17
- 230000006835 compression Effects 0.000 claims description 16
- 238000007906 compression Methods 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 238000010313 vacuum arc remelting Methods 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000005477 sputtering target Methods 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims 2
- 238000001887 electron backscatter diffraction Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 238000001125 extrusion Methods 0.000 description 18
- 229910052715 tantalum Inorganic materials 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000009721 upset forging Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001257 Nb alloy Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/02—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling heavy work, e.g. ingots, slabs, blooms, or billets, in which the cross-sectional form is unimportant ; Rolling combined with forging or pressing
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
Description
指標=‘x位置’/‘xステップ’+1
を決定する。
[例1]
第一の半厚部分
{111} S111 6.98%/mm
B111 4.616%
{100} S100 -4.72%/mm
B100 4.560%
第二の半厚部分
{111} S111 -8.78%/mm
B111 4.35%
{100} S100 0.39%/mm
B100 2.851%
[例2]
第一の半厚部分
{111} S111 8.21%/mm
B111 6.619%
{100} S100 -2.64%/mm
B100 7.045%
第二の半厚部分
{111} S111 -11.78%/mm
B111 8.412%
{100} S100 4.31%/mm
B100 6.500%
12 VARインゴット
20 押出しステップ
30 真空焼鈍ステップ
40 三軸鍛造ステップ
50 真空焼鈍ステップ
60 クロックローリングステップ
62 中間焼鈍ステップ
64 最終真空焼鈍ステップ
130 真空焼鈍ステップ
135 真空焼鈍ステップ
140 三軸鍛造ステップ
145 三軸鍛造ステップ
160 クロックローリング
162 中間焼鈍ステップ
164 最終焼鈍ステップ
212 インゴット
214 初期据え込み鍛造ステップ
216 初期据え込み鍛造ステップ
218 押出しステップ
220 ビレット
242 一軸鍛造ステップ
244 一軸鍛造ステップ
246 一軸鍛造ステップ
248 一軸鍛造ステップ
250 一軸鍛造ステップ
260 一軸鍛造ステップ
262 クロックローリングステップ
CL 中心線
Claims (6)
- Ta金属またはTa金属合金からスパッターターゲットを製造する方法であって、
a) インゴットを準備するために当該Ta金属またはTa金属合金を電子ビーム溶解し、その後、当該インゴットを真空アーク炉で再溶解してX軸、Y軸及びZ軸を有する真空アーク再溶解インゴットを準備し、
b) 当該真空アーク再溶解インゴットをX軸、Y軸及びZ軸に沿って順次に据え込み鍛造することにより三軸鍛造ステップを規定し、このとき、当該真空アーク再溶解インゴットが当該真空アーク再溶解インゴットの中心軸を定める中心線(CL)を有し、当該三軸鍛造時に当該CLが当該真空アーク再溶解インゴットの中心に保たれ、ここで、当該三軸鍛造ステップの少なくとも一部は加熱された状況下で実施され、そして、当該三軸鍛造が複数回実施され、
c) それぞれの三軸鍛造ステップの後に当該真空アーク再溶解インゴットを真空焼鈍し、
d) 当該真空アーク再溶解インゴットをクロックローリングし、このとき、当該CLが当該真空アーク再溶解インゴットの中心に保たれ、かつ当該クロックローリング時に使用される圧縮力に垂直であり、
e) 当該クロックローリングの後に当該真空アーク再溶解インゴットを真空焼鈍し、
f) 当該真空アーク再溶解インゴットに当該スパッターターゲットの作製に必要な形状を与える、
各ステップを含み、
ここで、ある厚さ寸法と、約50〜100μmの結晶粒径と、当該厚さ寸法の中間部分全体にわたって50%以上の{111}勾配を有する{100}−{111}混合集合組織と、を有するTaスパッターターゲットが形成されることを特徴とする方法。 - それぞれの三軸鍛造の後に実施されるそれぞれの当該真空焼鈍ステップが950〜1300℃の温度で実施され、クロックローリングの後に実施される当該焼鈍が950〜1300℃の温度で実施されることを特徴とする請求項1に記載の方法。
- 当該クロックローリングが、周囲温度において少なくとも50%の断面減少率となるまで実施される第一のクロックローリングを含むことを特徴とする請求項2に記載の方法。
- 当該クロックローリングが、周囲温度において少なくともさらに60%の断面減少率が与えられるまで実施される第二のクロックローリングを含むことを特徴とする請求項3に記載の方法。
- 当該第一のクロックローリングの後に、当該真空アーク再溶解インゴットが950〜1200℃で焼鈍されることを特徴とする請求項3に記載の方法。
- 焼鈍ステップが当該第二のクロックローリングの後にも実施されることを特徴とする請求項5に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19809808P | 2008-11-03 | 2008-11-03 | |
US61/198,098 | 2008-11-03 | ||
PCT/US2009/005945 WO2010051040A1 (en) | 2008-11-03 | 2009-11-03 | Method of making a sputter target and sputter targets made thereby |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012507626A JP2012507626A (ja) | 2012-03-29 |
JP5696051B2 true JP5696051B2 (ja) | 2015-04-08 |
Family
ID=41351490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011534527A Expired - Fee Related JP5696051B2 (ja) | 2008-11-03 | 2009-11-03 | スパッターターゲットを製造する方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9150957B2 (ja) |
JP (1) | JP5696051B2 (ja) |
KR (1) | KR101626286B1 (ja) |
WO (1) | WO2010051040A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011018895A1 (ja) * | 2009-08-12 | 2011-02-17 | 株式会社アルバック | スパッタリングターゲットの製造方法及びスパッタリングターゲット |
JP5464352B2 (ja) * | 2010-03-05 | 2014-04-09 | 三菱マテリアル株式会社 | 均一かつ微細結晶組織を有する高純度銅加工材の製造方法 |
RU2569293C1 (ru) * | 2014-07-11 | 2015-11-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС" | Мишень для получения функциональных покрытий и способ ее изготовления |
WO2016104878A1 (ko) * | 2014-12-22 | 2016-06-30 | 국방과학연구소 | 탄탈륨의 미세조직 및 집합조직 제어방법 |
CN107466328A (zh) | 2015-04-10 | 2017-12-12 | 东曹Smd有限公司 | 钽溅射靶的制造方法和由其制成的溅射靶 |
WO2016190159A1 (ja) * | 2015-05-22 | 2016-12-01 | Jx金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
WO2016190160A1 (ja) * | 2015-05-22 | 2016-12-01 | Jx金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
TW201738395A (zh) * | 2015-11-06 | 2017-11-01 | 塔沙Smd公司 | 具有提高的沉積速率的製備鉭濺鍍靶材的方法 |
TWI613307B (zh) * | 2015-12-30 | 2018-02-01 | 光洋應用材料科技股份有限公司 | 鉭靶材及其製法 |
JP6440866B2 (ja) * | 2016-03-25 | 2018-12-19 | Jx金属株式会社 | Ti−Nb合金スパッタリングターゲット及びその製造方法 |
CN108620812B (zh) * | 2017-03-17 | 2019-10-22 | 宁波江丰电子材料股份有限公司 | 靶材组件的制造方法 |
US11062889B2 (en) | 2017-06-26 | 2021-07-13 | Tosoh Smd, Inc. | Method of production of uniform metal plates and sputtering targets made thereby |
CN109986310B (zh) * | 2019-05-05 | 2021-10-26 | 中国工程物理研究院激光聚变研究中心 | 一种钼台阶靶的制造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3954514A (en) * | 1975-04-02 | 1976-05-04 | Lockheed Missiles & Space Company, Inc. | Textureless forging of beryllium |
US4721537A (en) * | 1985-10-15 | 1988-01-26 | Rockwell International Corporation | Method of producing a fine grain aluminum alloy using three axes deformation |
JPH01127132A (ja) | 1987-07-13 | 1989-05-19 | Daido Steel Co Ltd | 熱間鍛造方法および装置 |
JP2652334B2 (ja) * | 1993-11-10 | 1997-09-10 | 株式会社レイズエンジニアリング | 回転鍛造装置 |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
JPH1180942A (ja) * | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Taスパッタターゲットとその製造方法及び組立体 |
US6348139B1 (en) * | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
US6113761A (en) * | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US7063773B2 (en) * | 2000-08-17 | 2006-06-20 | Tosoh Smd, Inc. | High purity sputter targets with target end-of-life indication and method of manufacture |
US6462339B1 (en) * | 2000-09-20 | 2002-10-08 | Cabot Corporation | Method for quantifying the texture homogeneity of a polycrystalline material |
US6946039B1 (en) * | 2000-11-02 | 2005-09-20 | Honeywell International Inc. | Physical vapor deposition targets, and methods of fabricating metallic materials |
US6887356B2 (en) * | 2000-11-27 | 2005-05-03 | Cabot Corporation | Hollow cathode target and methods of making same |
US6872284B2 (en) * | 2001-04-24 | 2005-03-29 | Tosoh Smd, Inc. | Target and method of optimizing target profile |
US7228722B2 (en) * | 2003-06-09 | 2007-06-12 | Cabot Corporation | Method of forming sputtering articles by multidirectional deformation |
US8252126B2 (en) * | 2004-05-06 | 2012-08-28 | Global Advanced Metals, Usa, Inc. | Sputter targets and methods of forming same by rotary axial forging |
US7998287B2 (en) * | 2005-02-10 | 2011-08-16 | Cabot Corporation | Tantalum sputtering target and method of fabrication |
CZ308045B6 (cs) * | 2006-03-07 | 2019-11-20 | Cabot Corp | Způsob výroby kovového výrobku a kovová deska, vyrobená tímto způsobem |
JP4714123B2 (ja) * | 2006-10-30 | 2011-06-29 | 株式会社東芝 | スパッタリングターゲット用高純度Ta材の製造方法 |
JP5389802B2 (ja) * | 2007-08-06 | 2014-01-15 | エイチ.シー. スターク インコーポレイテッド | 組織の均一性が改善された高融点金属プレート |
-
2009
- 2009-11-03 US US12/998,555 patent/US9150957B2/en active Active
- 2009-11-03 KR KR1020117010028A patent/KR101626286B1/ko not_active IP Right Cessation
- 2009-11-03 WO PCT/US2009/005945 patent/WO2010051040A1/en active Application Filing
- 2009-11-03 JP JP2011534527A patent/JP5696051B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2010051040A1 (en) | 2010-05-06 |
US9150957B2 (en) | 2015-10-06 |
JP2012507626A (ja) | 2012-03-29 |
US20110214987A1 (en) | 2011-09-08 |
KR20110083640A (ko) | 2011-07-20 |
KR101626286B1 (ko) | 2016-06-01 |
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