TW358938B - Semiconductor IC - Google Patents

Semiconductor IC

Info

Publication number
TW358938B
TW358938B TW086112199A TW86112199A TW358938B TW 358938 B TW358938 B TW 358938B TW 086112199 A TW086112199 A TW 086112199A TW 86112199 A TW86112199 A TW 86112199A TW 358938 B TW358938 B TW 358938B
Authority
TW
Taiwan
Prior art keywords
output
voltage
transistor
nod
circuit
Prior art date
Application number
TW086112199A
Other languages
English (en)
Inventor
Hitoshi Tanaka
Masakazu Aoki
Kiyoo Itoh
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Application granted granted Critical
Publication of TW358938B publication Critical patent/TW358938B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Manipulation Of Pulses (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW086112199A 1996-08-27 1997-08-25 Semiconductor IC TW358938B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22478996A JP3709246B2 (ja) 1996-08-27 1996-08-27 半導体集積回路

Publications (1)

Publication Number Publication Date
TW358938B true TW358938B (en) 1999-05-21

Family

ID=16819233

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112199A TW358938B (en) 1996-08-27 1997-08-25 Semiconductor IC

Country Status (4)

Country Link
US (1) US5910924A (zh)
JP (1) JP3709246B2 (zh)
KR (1) KR100467918B1 (zh)
TW (1) TW358938B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105227177A (zh) * 2014-06-30 2016-01-06 硅谷实验室公司 包括双向调整器的隔离器
US12504469B2 (en) 2024-01-23 2025-12-23 Westinghouse Electric Company Llc Continuously variable electronic load tester for use with nuclear instrumentation system high voltage power supplies

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US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
JP4354360B2 (ja) * 2004-07-26 2009-10-28 Ｏｋｉセミコンダクタ株式会社 降圧電源装置
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US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
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US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
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JP5112208B2 (ja) * 2008-07-18 2013-01-09 ルネサスエレクトロニクス株式会社 レギュレータ及び半導体装置
US8350734B1 (en) * 2008-12-10 2013-01-08 Ess Technology, Inc. Method and apparatus for digital to analog conversion of data stream with random and low-frequency periodic jitter
JP4856200B2 (ja) * 2009-03-03 2012-01-18 株式会社東芝 半導体集積回路
KR101090469B1 (ko) * 2009-07-31 2011-12-06 주식회사 하이닉스반도체 데이터제어회로
JP5056955B2 (ja) 2010-07-30 2012-10-24 トヨタ自動車株式会社 電圧駆動型素子を駆動する駆動装置
JP2015019158A (ja) * 2013-07-09 2015-01-29 株式会社東芝 半導体回路
KR101598670B1 (ko) * 2013-12-04 2016-02-29 이화여자대학교 산학협력단 직류 정전압원을 이용한 액티브 필터 및 이를 이용한 cdr 및 pll
KR102246878B1 (ko) 2014-05-29 2021-04-30 삼성전자 주식회사 반도체 메모리 장치, 이를 포함하는 메모리 모듈, 및 이를 포함하는 메모리 시스템
CN108021169A (zh) * 2016-11-02 2018-05-11 中国科学院沈阳自动化研究所 一种ldo电路
CN109584936B (zh) * 2018-12-17 2024-05-28 珠海博雅科技股份有限公司 一种提高漏极电压稳定性的电路、存储芯片及存储器
JP7566700B2 (ja) * 2021-08-12 2024-10-15 株式会社東芝 半導体装置

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105227177A (zh) * 2014-06-30 2016-01-06 硅谷实验室公司 包括双向调整器的隔离器
CN105227177B (zh) * 2014-06-30 2021-10-15 天工方案公司 包括双向调整器的隔离器
US12504469B2 (en) 2024-01-23 2025-12-23 Westinghouse Electric Company Llc Continuously variable electronic load tester for use with nuclear instrumentation system high voltage power supplies

Also Published As

Publication number Publication date
KR100467918B1 (ko) 2005-06-02
KR19980018962A (ko) 1998-06-05
JP3709246B2 (ja) 2005-10-26
JPH1064261A (ja) 1998-03-06
US5910924A (en) 1999-06-08

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