TW356570B - Semiconductor device fabrication method and its treating liquid for the same - Google Patents

Semiconductor device fabrication method and its treating liquid for the same

Info

Publication number
TW356570B
TW356570B TW084107390A TW84107390A TW356570B TW 356570 B TW356570 B TW 356570B TW 084107390 A TW084107390 A TW 084107390A TW 84107390 A TW84107390 A TW 84107390A TW 356570 B TW356570 B TW 356570B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
fabrication method
device fabrication
treating liquid
same
Prior art date
Application number
TW084107390A
Other languages
English (en)
Inventor
Hideto Gotoh
Masaru Utsugi
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW356570B publication Critical patent/TW356570B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW084107390A 1994-06-17 1995-07-18 Semiconductor device fabrication method and its treating liquid for the same TW356570B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15917794A JP3407086B2 (ja) 1994-06-17 1994-06-17 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW356570B true TW356570B (en) 1999-04-21

Family

ID=15687986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084107390A TW356570B (en) 1994-06-17 1995-07-18 Semiconductor device fabrication method and its treating liquid for the same

Country Status (6)

Country Link
US (1) US5650041A (zh)
EP (1) EP0690486B1 (zh)
JP (1) JP3407086B2 (zh)
KR (1) KR100338484B1 (zh)
DE (1) DE69528117T2 (zh)
TW (1) TW356570B (zh)

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US5562801A (en) * 1994-04-28 1996-10-08 Cypress Semiconductor Corporation Method of etching an oxide layer
US5827784A (en) * 1995-12-14 1998-10-27 Texas Instruments Incorporated Method for improving contact openings during the manufacture of an integrated circuit
US5902134A (en) * 1996-08-07 1999-05-11 Matsushita Electronics Corporation Dry etching post-treatment method and method for manufacturing a semiconductor device
US5780363A (en) * 1997-04-04 1998-07-14 International Business Machines Coporation Etching composition and use thereof
US6630074B1 (en) * 1997-04-04 2003-10-07 International Business Machines Corporation Etching composition and use thereof
KR100252223B1 (ko) * 1997-08-30 2000-04-15 윤종용 반도체장치의 콘택홀 세정방법
US5965465A (en) * 1997-09-18 1999-10-12 International Business Machines Corporation Etching of silicon nitride
US6051321A (en) 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6020458A (en) 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
US6150282A (en) * 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
US6033996A (en) * 1997-11-13 2000-03-07 International Business Machines Corporation Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
KR100268456B1 (ko) * 1997-12-04 2000-11-01 윤종용 반도체장치의콘택형성방법
US6100202A (en) * 1997-12-08 2000-08-08 Taiwan Semiconductor Manufacturing Company Pre deposition stabilization method for forming a void free isotropically etched anisotropically patterned doped silicate glass layer
US6576547B2 (en) 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
WO1999057330A1 (en) * 1998-05-01 1999-11-11 Desu Seshu B Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition
US6200891B1 (en) 1998-08-13 2001-03-13 International Business Machines Corporation Removal of dielectric oxides
US6117796A (en) * 1998-08-13 2000-09-12 International Business Machines Corporation Removal of silicon oxide
KR100314806B1 (ko) 1998-10-29 2002-02-19 박종섭 스핀온글래스막형성방법
DE19901210A1 (de) * 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2001015479A (ja) * 1999-06-29 2001-01-19 Toshiba Corp 半導体装置の製造方法
US6495208B1 (en) 1999-09-09 2002-12-17 Virginia Tech Intellectual Properties, Inc. Near-room temperature CVD synthesis of organic polymer/oxide dielectric nanocomposites
US6451707B2 (en) * 1999-12-07 2002-09-17 Matsushita Electronics Corporation Method of removing reaction product due to plasma ashing of a resist pattern
WO2002033741A1 (fr) * 2000-10-18 2002-04-25 Sony Corporation Procede servant a fabriquer une couche isolante et procede servant a fabriquer un composant a semi-conducteur
US6635565B2 (en) * 2001-02-20 2003-10-21 United Microelectronics Corp. Method of cleaning a dual damascene structure
US6645926B2 (en) * 2001-11-28 2003-11-11 United Technologies Corporation Fluoride cleaning masking system
US7320942B2 (en) * 2002-05-21 2008-01-22 Applied Materials, Inc. Method for removal of metallic residue after plasma etching of a metal layer
US20040163681A1 (en) * 2003-02-25 2004-08-26 Applied Materials, Inc. Dilute sulfuric peroxide at point-of-use
TW200511495A (en) * 2003-09-09 2005-03-16 Nanya Technology Corp Cleaning method used in interconnects process
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
JP4693642B2 (ja) * 2006-01-30 2011-06-01 株式会社東芝 半導体装置の製造方法および洗浄装置
KR100792405B1 (ko) * 2007-01-03 2008-01-09 주식회사 하이닉스반도체 벌브형 리세스 패턴의 제조 방법
JP2009194196A (ja) 2008-02-15 2009-08-27 Nec Electronics Corp 半導体装置の製造方法および半導体装置
JP2012015343A (ja) * 2010-07-01 2012-01-19 Hitachi High-Technologies Corp プラズマエッチング方法
KR101933015B1 (ko) 2012-04-19 2018-12-27 삼성전자주식회사 반도체 장치의 패드 구조물, 그의 제조 방법 및 패드 구조물을 포함하는 반도체 패키지

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Also Published As

Publication number Publication date
US5650041A (en) 1997-07-22
JPH088233A (ja) 1996-01-12
JP3407086B2 (ja) 2003-05-19
KR100338484B1 (ko) 2002-11-27
DE69528117T2 (de) 2003-06-05
EP0690486B1 (en) 2002-09-11
EP0690486A2 (en) 1996-01-03
DE69528117D1 (de) 2002-10-17
KR960002629A (ko) 1996-01-26
EP0690486A3 (en) 1996-09-11

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees