TW365023B - Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip - Google Patents
Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chipInfo
- Publication number
- TW365023B TW365023B TW087106462A TW87106462A TW365023B TW 365023 B TW365023 B TW 365023B TW 087106462 A TW087106462 A TW 087106462A TW 87106462 A TW87106462 A TW 87106462A TW 365023 B TW365023 B TW 365023B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon layer
- polycrystalline silicon
- doped polycrystalline
- semiconductor chip
- layer
- Prior art date
Links
Abstract
The invention provides a kind of method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip which is used after the hydrous processing preventing forming water mark of native oxide structure on the surface so that the followed metal silicide layer will not have the problem of not being adhesive with the surface of doped polycrystalline silicon layer. The method includes the following steps: (1) by the insitu method to form the silicon layer with water-rejective property on the surface of polycrystalline silicon layer of semiconductor chip; (2) proceed a hydrous process to remove the contaminants on the chip surface; (3) proceed heat treatment for interaction of doped polycrystalline silicon layer and the silicon layer with water-rejective property to form a complete doped polycrystalline silicon layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087106462A TW365023B (en) | 1998-04-27 | 1998-04-27 | Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087106462A TW365023B (en) | 1998-04-27 | 1998-04-27 | Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip |
Publications (1)
Publication Number | Publication Date |
---|---|
TW365023B true TW365023B (en) | 1999-07-21 |
Family
ID=57941019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087106462A TW365023B (en) | 1998-04-27 | 1998-04-27 | Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW365023B (en) |
-
1998
- 1998-04-27 TW TW087106462A patent/TW365023B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |