TW365023B - Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip - Google Patents

Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip

Info

Publication number
TW365023B
TW365023B TW087106462A TW87106462A TW365023B TW 365023 B TW365023 B TW 365023B TW 087106462 A TW087106462 A TW 087106462A TW 87106462 A TW87106462 A TW 87106462A TW 365023 B TW365023 B TW 365023B
Authority
TW
Taiwan
Prior art keywords
silicon layer
polycrystalline silicon
doped polycrystalline
semiconductor chip
layer
Prior art date
Application number
TW087106462A
Other languages
Chinese (zh)
Inventor
Tsai-Sen Lin
De-Tsz Fan
Chung-Shiun Jou
Ting-Shiun Wang
Original Assignee
Promos Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promos Technologies Inc filed Critical Promos Technologies Inc
Priority to TW087106462A priority Critical patent/TW365023B/en
Application granted granted Critical
Publication of TW365023B publication Critical patent/TW365023B/en

Links

Abstract

The invention provides a kind of method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip which is used after the hydrous processing preventing forming water mark of native oxide structure on the surface so that the followed metal silicide layer will not have the problem of not being adhesive with the surface of doped polycrystalline silicon layer. The method includes the following steps: (1) by the insitu method to form the silicon layer with water-rejective property on the surface of polycrystalline silicon layer of semiconductor chip; (2) proceed a hydrous process to remove the contaminants on the chip surface; (3) proceed heat treatment for interaction of doped polycrystalline silicon layer and the silicon layer with water-rejective property to form a complete doped polycrystalline silicon layer.
TW087106462A 1998-04-27 1998-04-27 Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip TW365023B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087106462A TW365023B (en) 1998-04-27 1998-04-27 Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087106462A TW365023B (en) 1998-04-27 1998-04-27 Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip

Publications (1)

Publication Number Publication Date
TW365023B true TW365023B (en) 1999-07-21

Family

ID=57941019

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087106462A TW365023B (en) 1998-04-27 1998-04-27 Method for preventing forming of water mark or oxide layer on the doped polycrystalline silicon layer of semiconductor chip

Country Status (1)

Country Link
TW (1) TW365023B (en)

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees