ATE293843T1 - Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellung - Google Patents
Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellungInfo
- Publication number
- ATE293843T1 ATE293843T1 AT98928905T AT98928905T ATE293843T1 AT E293843 T1 ATE293843 T1 AT E293843T1 AT 98928905 T AT98928905 T AT 98928905T AT 98928905 T AT98928905 T AT 98928905T AT E293843 T1 ATE293843 T1 AT E293843T1
- Authority
- AT
- Austria
- Prior art keywords
- compositions
- layer stack
- methods
- post
- wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 7
- 239000000203 mixture Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 3
- 239000001307 helium Substances 0.000 abstract 2
- 229910052734 helium Inorganic materials 0.000 abstract 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000002161 passivation Methods 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Seeds, Soups, And Other Foods (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/873,611 US6209551B1 (en) | 1997-06-11 | 1997-06-11 | Methods and compositions for post-etch layer stack treatment in semiconductor fabrication |
| PCT/US1998/011617 WO1998057366A1 (en) | 1997-06-11 | 1998-06-10 | Methods and compositions for post-etch layer stack treatment in semiconductor fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE293843T1 true ATE293843T1 (de) | 2005-05-15 |
Family
ID=25361985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98928905T ATE293843T1 (de) | 1997-06-11 | 1998-06-10 | Verfahren und zusammensetzungen zum nachätzungsbehandeln von schichtfolgen in der halbleiterherstellung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6209551B1 (de) |
| EP (1) | EP0990265B1 (de) |
| JP (1) | JP4642164B2 (de) |
| KR (1) | KR100524450B1 (de) |
| AT (1) | ATE293843T1 (de) |
| DE (1) | DE69829850T2 (de) |
| TW (1) | TW399268B (de) |
| WO (1) | WO1998057366A1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100677965B1 (ko) * | 1999-11-01 | 2007-02-01 | 동경 엘렉트론 주식회사 | 기판처리방법 및 기판처리장치 |
| US6667244B1 (en) | 2000-03-24 | 2003-12-23 | Gerald M. Cox | Method for etching sidewall polymer and other residues from the surface of semiconductor devices |
| EP1297566A2 (de) * | 2000-06-14 | 2003-04-02 | Applied Materials, Inc. | Verfahren zur reinigung von einem substrat und einrichtung dafür |
| US7276454B2 (en) * | 2002-11-02 | 2007-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Application of impressed-current cathodic protection to prevent metal corrosion and oxidation |
| US7164095B2 (en) * | 2004-07-07 | 2007-01-16 | Noritsu Koki Co., Ltd. | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
| US7806077B2 (en) | 2004-07-30 | 2010-10-05 | Amarante Technologies, Inc. | Plasma nozzle array for providing uniform scalable microwave plasma generation |
| US20060021980A1 (en) * | 2004-07-30 | 2006-02-02 | Lee Sang H | System and method for controlling a power distribution within a microwave cavity |
| US7271363B2 (en) * | 2004-09-01 | 2007-09-18 | Noritsu Koki Co., Ltd. | Portable microwave plasma systems including a supply line for gas and microwaves |
| US7189939B2 (en) * | 2004-09-01 | 2007-03-13 | Noritsu Koki Co., Ltd. | Portable microwave plasma discharge unit |
| US20060052883A1 (en) * | 2004-09-08 | 2006-03-09 | Lee Sang H | System and method for optimizing data acquisition of plasma using a feedback control module |
| CN114442443A (zh) | 2020-10-30 | 2022-05-06 | 江苏鲁汶仪器有限公司 | 一种光刻胶剥离方法 |
| CN114335256B (zh) * | 2022-03-10 | 2022-05-20 | 北京通美晶体技术股份有限公司 | 一种干法清洗锗晶片的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2592275B2 (ja) * | 1987-12-25 | 1997-03-19 | 富士通株式会社 | プラズマ処理方法 |
| US4985113A (en) | 1989-03-10 | 1991-01-15 | Hitachi, Ltd. | Sample treating method and apparatus |
| JP2695960B2 (ja) * | 1989-03-10 | 1998-01-14 | 株式会社日立製作所 | 試料処理方法 |
| KR950010044B1 (ko) * | 1990-06-27 | 1995-09-06 | 후지쓰 가부시끼가이샤 | 반도체 집적회로의 제조방법 및 그에 사용된 제조장치 |
| JP2925751B2 (ja) * | 1991-01-08 | 1999-07-28 | 富士通株式会社 | 半導体装置の製造方法 |
| US5221424A (en) * | 1991-11-21 | 1993-06-22 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch |
| JPH06349786A (ja) * | 1993-06-04 | 1994-12-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| WO1995021458A1 (en) | 1994-02-03 | 1995-08-10 | Applied Materials, Inc. | Stripping, passivation and corrosion inhibition of semiconductor substrates |
| US5545289A (en) * | 1994-02-03 | 1996-08-13 | Applied Materials, Inc. | Passivating, stripping and corrosion inhibition of semiconductor substrates |
| US5631803A (en) * | 1995-01-06 | 1997-05-20 | Applied Materials, Inc. | Erosion resistant electrostatic chuck with improved cooling system |
| JP3339523B2 (ja) * | 1994-03-17 | 2002-10-28 | 株式会社日立製作所 | アッシング方法 |
| JPH0969525A (ja) * | 1995-08-31 | 1997-03-11 | Mitsubishi Electric Corp | 金属配線の処理方法 |
| US5679211A (en) * | 1995-09-18 | 1997-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spin-on-glass etchback planarization process using an oxygen plasma to remove an etchback polymer residue |
-
1997
- 1997-06-11 US US08/873,611 patent/US6209551B1/en not_active Expired - Lifetime
-
1998
- 1998-06-09 TW TW087109171A patent/TW399268B/zh not_active IP Right Cessation
- 1998-06-10 KR KR10-1999-7011449A patent/KR100524450B1/ko not_active IP Right Cessation
- 1998-06-10 AT AT98928905T patent/ATE293843T1/de not_active IP Right Cessation
- 1998-06-10 EP EP98928905A patent/EP0990265B1/de not_active Expired - Lifetime
- 1998-06-10 JP JP50291199A patent/JP4642164B2/ja not_active Expired - Fee Related
- 1998-06-10 WO PCT/US1998/011617 patent/WO1998057366A1/en not_active Application Discontinuation
- 1998-06-10 DE DE69829850T patent/DE69829850T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6209551B1 (en) | 2001-04-03 |
| DE69829850D1 (de) | 2005-05-25 |
| KR20010013446A (ko) | 2001-02-26 |
| TW399268B (en) | 2000-07-21 |
| JP2002514354A (ja) | 2002-05-14 |
| KR100524450B1 (ko) | 2005-10-26 |
| EP0990265B1 (de) | 2005-04-20 |
| WO1998057366A1 (en) | 1998-12-17 |
| EP0990265A1 (de) | 2000-04-05 |
| JP4642164B2 (ja) | 2011-03-02 |
| DE69829850T2 (de) | 2006-03-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |