DE60045134D1 - Verfahren und System zum Behandeln eines Werkstückes wie eines Halbleiterwafers - Google Patents
Verfahren und System zum Behandeln eines Werkstückes wie eines HalbleiterwafersInfo
- Publication number
- DE60045134D1 DE60045134D1 DE60045134T DE60045134T DE60045134D1 DE 60045134 D1 DE60045134 D1 DE 60045134D1 DE 60045134 T DE60045134 T DE 60045134T DE 60045134 T DE60045134 T DE 60045134T DE 60045134 D1 DE60045134 D1 DE 60045134D1
- Authority
- DE
- Germany
- Prior art keywords
- workpiece
- liquid
- water
- hydrochloric acid
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 8
- 239000007788 liquid Substances 0.000 abstract 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 1
- 239000000908 ammonium hydroxide Substances 0.000 abstract 1
- 239000006193 liquid solution Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2230/00—Other cleaning aspects applicable to all B08B range
- B08B2230/01—Cleaning with steam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14535099P | 1999-07-23 | 1999-07-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60045134D1 true DE60045134D1 (de) | 2010-12-02 |
Family
ID=22512696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60045134T Expired - Lifetime DE60045134D1 (de) | 1999-07-23 | 2000-07-21 | Verfahren und System zum Behandeln eines Werkstückes wie eines Halbleiterwafers |
Country Status (6)
Country | Link |
---|---|
EP (2) | EP1212151A4 (de) |
JP (3) | JP2004500701A (de) |
AT (1) | ATE485115T1 (de) |
DE (1) | DE60045134D1 (de) |
TW (1) | TW472317B (de) |
WO (1) | WO2001007177A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4917651B2 (ja) * | 1999-08-12 | 2012-04-18 | アクアサイエンス株式会社 | レジスト膜除去装置及びレジスト膜除去方法 |
US6982006B1 (en) | 1999-10-19 | 2006-01-03 | Boyers David G | Method and apparatus for treating a substrate with an ozone-solvent solution |
JP4000247B2 (ja) | 2001-04-18 | 2007-10-31 | 株式会社ルネサステクノロジ | フォトマスクの洗浄方法 |
EP1347496A3 (de) | 2002-03-12 | 2006-05-03 | Dainippon Screen Mfg. Co., Ltd. | Vorrichtung und Verfahren zur Substratbehandlung |
JP4232383B2 (ja) * | 2002-05-13 | 2009-03-04 | 信越半導体株式会社 | 半導体ウエーハの表面処理方法 |
KR100467016B1 (ko) * | 2002-05-30 | 2005-01-24 | 삼성전자주식회사 | 반도체기판의 세정방법 |
JP2006093473A (ja) * | 2004-09-24 | 2006-04-06 | M Fsi Kk | 基板の洗浄方法及び基板の洗浄装置 |
JP4919388B2 (ja) * | 2006-03-09 | 2012-04-18 | 国立大学法人広島大学 | 食品製造設備の被洗浄物を洗浄する洗浄装置、および洗浄方法 |
DE102007027112B4 (de) * | 2007-06-13 | 2011-06-22 | Siltronic AG, 81737 | Verfahren zur Reinigung, Trocknung und Hydrophilierung einer Halbleiterscheibe |
JP2008311591A (ja) * | 2007-06-18 | 2008-12-25 | Sharp Corp | 基板処理装置および基板処理方法 |
US7955440B2 (en) * | 2007-12-07 | 2011-06-07 | Sumco Corporation | Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer |
WO2009103595A1 (en) * | 2008-02-21 | 2009-08-27 | Unilever Nv | A process and a device to clean substrates |
IT1395090B1 (it) * | 2009-04-08 | 2012-09-05 | Lasa Impianti Srl | Apparecchiatura a basso impatto ambientale per il lavaggio di particolari metallici e non metallici che necessitano di un altro grado di pulizia |
JP5682290B2 (ja) * | 2010-12-20 | 2015-03-11 | 東京エレクトロン株式会社 | 炭素含有薄膜のスリミング方法及び酸化装置 |
JP5520991B2 (ja) * | 2012-03-29 | 2014-06-11 | 芝浦メカトロニクス株式会社 | 基板の処理装置及び処理方法 |
US20130276822A1 (en) * | 2012-04-18 | 2013-10-24 | Advanced Wet Technologies Gmbh | Hyperbaric methods and systems for rinsing and drying granular materials |
US11358172B2 (en) * | 2015-09-24 | 2022-06-14 | Suss Microtec Photomask Equipment Gmbh & Co. Kg | Method for treating substrates with an aqueous liquid medium exposed to UV-radiation |
WO2018076187A1 (zh) * | 2016-10-25 | 2018-05-03 | 深圳市柔宇科技有限公司 | 液体控温系统及膜层剥离设备 |
JP7353212B2 (ja) * | 2020-02-28 | 2023-09-29 | 株式会社Screenホールディングス | 基板処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5232511A (en) * | 1990-05-15 | 1993-08-03 | Semitool, Inc. | Dynamic semiconductor wafer processing using homogeneous mixed acid vapors |
US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
JPH05152203A (ja) * | 1991-11-29 | 1993-06-18 | Chlorine Eng Corp Ltd | 基板処理方法および処理装置 |
KR940012061A (ko) * | 1992-11-27 | 1994-06-22 | 가나이 쯔또무 | 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치 |
US5464480A (en) * | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
JP2760418B2 (ja) * | 1994-07-29 | 1998-05-28 | 住友シチックス株式会社 | 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法 |
JP3923097B2 (ja) * | 1995-03-06 | 2007-05-30 | 忠弘 大見 | 洗浄装置 |
JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
US5803982A (en) * | 1996-10-15 | 1998-09-08 | Ez Environmental Solutions Corporation | Pressure washing apparatus with ozone generator |
ATE522926T1 (de) * | 1997-02-14 | 2011-09-15 | Imec | Verfahren zur entfernung organischer kontamination von einer halbleiteroberfläche |
JPH10340876A (ja) * | 1997-06-10 | 1998-12-22 | Shibaura Eng Works Co Ltd | 洗浄処理方法および洗浄処理装置 |
JP4477704B2 (ja) * | 1997-11-20 | 2010-06-09 | アイメック | 半導体基板表面からの有機汚染物の除去方法 |
-
2000
- 2000-07-21 AT AT04020205T patent/ATE485115T1/de active
- 2000-07-21 EP EP00948892A patent/EP1212151A4/de not_active Withdrawn
- 2000-07-21 JP JP2001512043A patent/JP2004500701A/ja active Pending
- 2000-07-21 TW TW089114615A patent/TW472317B/zh not_active IP Right Cessation
- 2000-07-21 WO PCT/US2000/020036 patent/WO2001007177A1/en active Application Filing
- 2000-07-21 EP EP04020205A patent/EP1481741B1/de not_active Expired - Lifetime
- 2000-07-21 DE DE60045134T patent/DE60045134D1/de not_active Expired - Lifetime
-
2006
- 2006-04-24 JP JP2006119518A patent/JP2006261685A/ja active Pending
- 2006-09-20 JP JP2006254509A patent/JP2007049176A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW472317B (en) | 2002-01-11 |
WO2001007177A1 (en) | 2001-02-01 |
JP2007049176A (ja) | 2007-02-22 |
ATE485115T1 (de) | 2010-11-15 |
JP2006261685A (ja) | 2006-09-28 |
EP1481741A3 (de) | 2005-08-17 |
EP1212151A1 (de) | 2002-06-12 |
JP2004500701A (ja) | 2004-01-08 |
EP1212151A4 (de) | 2005-08-17 |
EP1481741A2 (de) | 2004-12-01 |
EP1481741B1 (de) | 2010-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R081 | Change of applicant/patentee |
Ref document number: 1481741 Country of ref document: EP Owner name: APPLIED MATERIALS, INC. (N.D.GES.D. STAATES DE, US Free format text: FORMER OWNER: SEMITOOL, INC., KALISPELL, US Effective date: 20120801 |