TW347537B - Method of programming and reading data in a nonvolatile semiconductor memory device and circuit therefor - Google Patents

Method of programming and reading data in a nonvolatile semiconductor memory device and circuit therefor

Info

Publication number
TW347537B
TW347537B TW085115921A TW85115921A TW347537B TW 347537 B TW347537 B TW 347537B TW 085115921 A TW085115921 A TW 085115921A TW 85115921 A TW85115921 A TW 85115921A TW 347537 B TW347537 B TW 347537B
Authority
TW
Taiwan
Prior art keywords
memory cell
data
cell array
transistors
flag
Prior art date
Application number
TW085115921A
Other languages
English (en)
Inventor
Kim Jin-Ki
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW347537B publication Critical patent/TW347537B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
TW085115921A 1995-11-10 1996-12-23 Method of programming and reading data in a nonvolatile semiconductor memory device and circuit therefor TW347537B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950040639A KR0172366B1 (ko) 1995-11-10 1995-11-10 불휘발성 반도체 메모리 장치의 독출 및 프로그램 방법과 그 회로

Publications (1)

Publication Number Publication Date
TW347537B true TW347537B (en) 1998-12-11

Family

ID=19433644

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115921A TW347537B (en) 1995-11-10 1996-12-23 Method of programming and reading data in a nonvolatile semiconductor memory device and circuit therefor

Country Status (6)

Country Link
US (1) US5996041A (zh)
JP (1) JP3647996B2 (zh)
KR (1) KR0172366B1 (zh)
DE (1) DE19646216C2 (zh)
IT (1) IT1286092B1 (zh)
TW (1) TW347537B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI584296B (zh) * 2015-03-02 2017-05-21 Toshiba Kk Semiconductor memory device and memory system

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001006379A (ja) * 1999-06-16 2001-01-12 Fujitsu Ltd 複写、移動機能を有するフラッシュメモリ
US6463003B2 (en) * 2000-06-07 2002-10-08 Advanced Micro Devices, Inc. Power saving scheme for burst mode implementation during reading of data from a memory device
DK200300237A (da) * 2000-08-17 2003-02-17 Xemics Sa Styremodul omfattende en ROM med reduceret elektrisk forbrug
JP2003030993A (ja) 2001-07-17 2003-01-31 Toshiba Corp 半導体記憶装置
US6671204B2 (en) 2001-07-23 2003-12-30 Samsung Electronics Co., Ltd. Nonvolatile memory device with page buffer having dual registers and methods of using the same
US7042770B2 (en) * 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
KR100454119B1 (ko) * 2001-10-24 2004-10-26 삼성전자주식회사 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들
KR100437461B1 (ko) 2002-01-12 2004-06-23 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 소거, 프로그램,그리고 카피백 프로그램 방법
JP4004811B2 (ja) * 2002-02-06 2007-11-07 株式会社東芝 不揮発性半導体記憶装置
KR100472726B1 (ko) * 2002-10-29 2005-03-10 주식회사 하이닉스반도체 고속 데이터억세스를 위한 반도체 메모리장치 및 그구동방법
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
KR100543447B1 (ko) * 2003-04-03 2006-01-23 삼성전자주식회사 에러정정기능을 가진 플래쉬메모리장치
JP4563715B2 (ja) * 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
DE10336225B3 (de) * 2003-08-07 2005-01-13 Giesecke & Devrient Gmbh Zustandskennzeichen (Flag) für einen bezüglich Löschen und Schreiben asymmetrischen Speicher
US7379333B2 (en) 2004-10-28 2008-05-27 Samsung Electronics Co., Ltd. Page-buffer and non-volatile semiconductor memory including page buffer
KR100626393B1 (ko) * 2005-04-07 2006-09-20 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 멀티-페이지 카피백 방법
JP5014125B2 (ja) * 2005-05-30 2012-08-29 スパンション エルエルシー 半導体装置及びプログラムデータ冗長方法
US7958430B1 (en) 2005-06-20 2011-06-07 Cypress Semiconductor Corporation Flash memory device and method
US7233179B2 (en) * 2005-10-28 2007-06-19 Analog Devices, Inc. Output stage interface circuit for outputting digital data onto a data bus
JP4955990B2 (ja) * 2005-12-14 2012-06-20 株式会社東芝 不揮発性半導体記憶装置
JP4734110B2 (ja) * 2005-12-14 2011-07-27 株式会社東芝 不揮発性半導体記憶装置
KR100684909B1 (ko) * 2006-01-24 2007-02-22 삼성전자주식회사 읽기 에러를 방지할 수 있는 플래시 메모리 장치
JP4984666B2 (ja) * 2006-06-12 2012-07-25 ソニー株式会社 不揮発性メモリ
KR100758300B1 (ko) * 2006-07-26 2007-09-12 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
KR100837274B1 (ko) * 2006-08-28 2008-06-11 삼성전자주식회사 오토 멀티-페이지 카피백 기능을 갖는 플래시 메모리 장치및 그것의 블록 대체 방법
WO2008031074A1 (en) * 2006-09-08 2008-03-13 Sandisk Corporation Pseudo random and command driven bit compensation for the cycling effects in flash memory and methods therefor
US7885112B2 (en) * 2007-09-07 2011-02-08 Sandisk Corporation Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
US7606966B2 (en) * 2006-09-08 2009-10-20 Sandisk Corporation Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
US7734861B2 (en) * 2006-09-08 2010-06-08 Sandisk Corporation Pseudo random and command driven bit compensation for the cycling effects in flash memory
KR100782329B1 (ko) 2006-10-02 2007-12-06 삼성전자주식회사 메모리 셀 어레이에 분산 배열된 플래그 셀 어레이를구비하는 비휘발성 메모리 장치 및 상기 메모리 장치의구동 방법
KR100826654B1 (ko) * 2007-04-24 2008-05-06 주식회사 하이닉스반도체 플래시 메모리소자의 동작방법 및 이를 위한 제어회로
KR101248942B1 (ko) * 2007-10-17 2013-03-29 삼성전자주식회사 비휘발성 메모리 장치
JP2010027163A (ja) * 2008-07-22 2010-02-04 Toshiba Corp 半導体メモリコントローラ、および半導体メモリシステム、および半導体メモリシステムの記録再生方法
KR101497545B1 (ko) * 2008-09-12 2015-03-03 삼성전자주식회사 프리 페이지 검출 방법 및 장치와 이를 이용한 에러 정정 코드 디코딩 방법 및 장치
KR101044533B1 (ko) * 2009-06-29 2011-06-27 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 이것의 카피백 프로그램 방법
KR20110092090A (ko) * 2010-02-08 2011-08-17 삼성전자주식회사 불 휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
US9135998B2 (en) 2010-11-09 2015-09-15 Micron Technology, Inc. Sense operation flags in a memory device
US8843693B2 (en) 2011-05-17 2014-09-23 SanDisk Technologies, Inc. Non-volatile memory and method with improved data scrambling
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
US8842476B2 (en) * 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
KR101799765B1 (ko) * 2011-11-21 2017-11-22 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
KR102327076B1 (ko) * 2014-12-18 2021-11-17 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR102422478B1 (ko) 2016-05-10 2022-07-19 삼성전자주식회사 불휘발성 메모리 장치의 독출 방법
US11017848B2 (en) * 2019-10-22 2021-05-25 Samsung Electronics Co., Ltd. Static random-access memory (SRAM) system with delay tuning and control and a method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03162800A (ja) * 1989-08-29 1991-07-12 Mitsubishi Electric Corp 半導体メモリ装置
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH04255996A (ja) * 1991-02-08 1992-09-10 Mitsubishi Electric Corp 不揮発性半導体記憶装置
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
JPH06267283A (ja) * 1993-03-16 1994-09-22 Mitsubishi Electric Corp データ書き込み可能な読み出し専用メモリ及びそのデータ書き込み／読み出し方法
JP2922116B2 (ja) * 1993-09-02 1999-07-19 株式会社東芝 半導体記憶装置
KR0140179B1 (ko) * 1994-12-19 1998-07-15 김광호 불휘발성 반도체 메모리
KR0142367B1 (ko) * 1995-02-04 1998-07-15 김광호 열 리던던씨를 가지는 불휘발성 반도체 메모리의 소거 검증회로
US5682345A (en) * 1995-07-28 1997-10-28 Micron Quantum Devices, Inc. Non-volatile data storage unit method of controlling same
KR0172441B1 (ko) * 1995-09-19 1999-03-30 김광호 불휘발성 반도체 메모리의 프로그램 방법
KR0169412B1 (ko) * 1995-10-16 1999-02-01 김광호 불휘발성 반도체 메모리 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI584296B (zh) * 2015-03-02 2017-05-21 Toshiba Kk Semiconductor memory device and memory system

Also Published As

Publication number Publication date
ITMI962323A0 (it) 1996-11-08
ITMI962323A1 (it) 1998-05-08
JP3647996B2 (ja) 2005-05-18
DE19646216C2 (de) 1999-09-09
KR0172366B1 (ko) 1999-03-30
IT1286092B1 (it) 1998-07-07
JPH09180477A (ja) 1997-07-11
DE19646216A1 (de) 1997-05-15
KR970029868A (ko) 1997-06-26
US5996041A (en) 1999-11-30

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