TW339471B - Manufacturing method of fast-flash memory cells - Google Patents
Manufacturing method of fast-flash memory cellsInfo
- Publication number
- TW339471B TW339471B TW086108329A TW86108329A TW339471B TW 339471 B TW339471 B TW 339471B TW 086108329 A TW086108329 A TW 086108329A TW 86108329 A TW86108329 A TW 86108329A TW 339471 B TW339471 B TW 339471B
- Authority
- TW
- Taiwan
- Prior art keywords
- zone
- formation
- layer
- voltage transistor
- membrane
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960024393A KR100199382B1 (ko) | 1996-06-27 | 1996-06-27 | 플래쉬 메모리 소자의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW339471B true TW339471B (en) | 1998-09-01 |
Family
ID=19463798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086108329A TW339471B (en) | 1996-06-27 | 1997-06-16 | Manufacturing method of fast-flash memory cells |
Country Status (7)
Country | Link |
---|---|
US (1) | US5888869A (zh) |
JP (1) | JP2777357B2 (zh) |
KR (1) | KR100199382B1 (zh) |
CN (1) | CN1085412C (zh) |
DE (1) | DE19727397B4 (zh) |
GB (1) | GB2314678B (zh) |
TW (1) | TW339471B (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0889520B1 (en) * | 1997-07-03 | 2005-09-28 | STMicroelectronics S.r.l. | Method of fabrication a non-volatile semiconductor memory device with shielded single polysilicon gate memory part |
US6040216A (en) * | 1997-08-11 | 2000-03-21 | Mosel Vitelic, Inc. | Method (and device) for producing tunnel silicon oxynitride layer |
AU735045B2 (en) * | 1997-10-30 | 2001-06-28 | Texas Instruments Incorporated | A process flow to integrate high and low voltage peripheral transistors with a floating gate array |
TW374939B (en) * | 1997-12-19 | 1999-11-21 | Promos Technologies Inc | Method of formation of 2 gate oxide layers of different thickness in an IC |
EP0975022A1 (en) * | 1998-07-22 | 2000-01-26 | STMicroelectronics S.r.l. | Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors, with salicided junctions |
US6191444B1 (en) * | 1998-09-03 | 2001-02-20 | Micron Technology, Inc. | Mini flash process and circuit |
KR100268894B1 (ko) * | 1998-09-29 | 2000-10-16 | 김영환 | 플래쉬 메모리 소자의 제조방법 |
EP1005079B1 (en) * | 1998-11-26 | 2012-12-26 | STMicroelectronics Srl | Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry |
US6362049B1 (en) * | 1998-12-04 | 2002-03-26 | Advanced Micro Devices, Inc. | High yield performance semiconductor process flow for NAND flash memory products |
US6180456B1 (en) * | 1999-02-17 | 2001-01-30 | International Business Machines Corporation | Triple polysilicon embedded NVRAM cell and method thereof |
TW445620B (en) * | 1999-03-05 | 2001-07-11 | United Microelectronics Corp | Method for manufacturing the source line of nonvolatile memory |
US6130168A (en) * | 1999-07-08 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Using ONO as hard mask to reduce STI oxide loss on low voltage device in flash or EPROM process |
US6159802A (en) * | 1999-07-14 | 2000-12-12 | United Microelectronics Corp. | Method of forming a stack-gate of a non-volatile memory on a semiconductor wafer |
TW415045B (en) * | 1999-08-10 | 2000-12-11 | United Microelectronics Corp | Manufacture of embedded flash memory |
US6177362B1 (en) * | 1999-08-17 | 2001-01-23 | United Microelectronics Corp. | Fabrication method for gate structure having gate dielectric layers of different thickness |
US6238984B1 (en) * | 2000-05-05 | 2001-05-29 | United Microelectronics Corp. | Integrating high voltage and low voltage device with silicide block mask |
DE10110150A1 (de) * | 2001-03-02 | 2002-09-19 | Infineon Technologies Ag | Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray |
US6399443B1 (en) * | 2001-05-07 | 2002-06-04 | Chartered Semiconductor Manufacturing Ltd | Method for manufacturing dual voltage flash integrated circuit |
KR100399350B1 (ko) * | 2001-08-09 | 2003-09-26 | 삼성전자주식회사 | 부유 트랩형 소자를 가지는 비휘발성 반도체 메모리 장치및 그 제조방법 |
KR100407573B1 (ko) * | 2001-08-09 | 2003-11-28 | 삼성전자주식회사 | 부유 트랩형 비휘발성 메모리 장치 형성 방법 |
US6551883B1 (en) * | 2001-12-27 | 2003-04-22 | Silicon Integrated Systems Corp. | MOS device with dual gate insulators and method of forming the same |
KR100437451B1 (ko) * | 2002-05-07 | 2004-06-23 | 삼성전자주식회사 | 트랩형 비휘발성 메모리 장치의 제조 방법 |
US6797568B1 (en) * | 2002-11-21 | 2004-09-28 | Lattice Semiconductor Corp. | Flash technology transistors and methods for forming the same |
JP2004228358A (ja) * | 2003-01-23 | 2004-08-12 | Fujitsu Ltd | 半導体装置の製造方法 |
KR100518577B1 (ko) * | 2003-05-26 | 2005-10-04 | 삼성전자주식회사 | 원 타임 프로그래머블 메모리 소자 및 이를 포함하는반도체 집적회로와 그 제조방법 |
KR100557995B1 (ko) * | 2003-07-30 | 2006-03-06 | 삼성전자주식회사 | 부유트랩형 비휘발성 메모리 셀을 갖는 반도체 장치 및그의 제조방법 |
CN100361292C (zh) * | 2004-12-30 | 2008-01-09 | 旺宏电子股份有限公司 | 快闪存储单元制造方法 |
US8642441B1 (en) * | 2006-12-15 | 2014-02-04 | Spansion Llc | Self-aligned STI with single poly for manufacturing a flash memory device |
US7439134B1 (en) * | 2007-04-20 | 2008-10-21 | Freescale Semiconductor, Inc. | Method for process integration of non-volatile memory cell transistors with transistors of another type |
KR100957873B1 (ko) * | 2007-12-28 | 2010-05-13 | 매그나칩 반도체 유한회사 | 반도체 소자의 게이트 산화막 형성 방법 |
CN103367255A (zh) * | 2012-03-26 | 2013-10-23 | 上海宏力半导体制造有限公司 | 可多次编程的硅氧化氮氧化硅的制造方法 |
CN104952734B (zh) * | 2015-07-16 | 2020-01-24 | 矽力杰半导体技术(杭州)有限公司 | 半导体结构及其制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5183773A (en) * | 1989-04-13 | 1993-02-02 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device including such input protection transistor |
JP2509697B2 (ja) * | 1989-04-28 | 1996-06-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5104819A (en) * | 1989-08-07 | 1992-04-14 | Intel Corporation | Fabrication of interpoly dielctric for EPROM-related technologies |
US5223451A (en) * | 1989-10-06 | 1993-06-29 | Kabushiki Kaisha Toshiba | Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip and method of making it |
KR930007527B1 (ko) * | 1990-09-22 | 1993-08-12 | 삼성전자 주식회사 | 스토리지 셀 어레이와 주변회로를 갖는 불휘발성 반도체 메모리 장치의 제조방법 및 그 구조 |
US5175120A (en) * | 1991-10-11 | 1992-12-29 | Micron Technology, Inc. | Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors |
KR960012303B1 (ko) * | 1992-08-18 | 1996-09-18 | 삼성전자 주식회사 | 불휘발성 반도체메모리장치 및 그 제조방법 |
US5292681A (en) * | 1993-09-16 | 1994-03-08 | Micron Semiconductor, Inc. | Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors |
US5478767A (en) * | 1994-09-30 | 1995-12-26 | United Microelectronics Corporation | Method of making a flash EEPROM memory cell comprising polysilicon and textured oxide sidewall spacers |
JPH08167705A (ja) * | 1994-12-15 | 1996-06-25 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
US5723355A (en) * | 1997-01-17 | 1998-03-03 | Programmable Microelectronics Corp. | Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory |
-
1996
- 1996-06-27 KR KR1019960024393A patent/KR100199382B1/ko not_active IP Right Cessation
-
1997
- 1997-06-16 TW TW086108329A patent/TW339471B/zh not_active IP Right Cessation
- 1997-06-19 GB GB9712952A patent/GB2314678B/en not_active Expired - Fee Related
- 1997-06-20 US US08/879,419 patent/US5888869A/en not_active Expired - Lifetime
- 1997-06-23 JP JP9165856A patent/JP2777357B2/ja not_active Expired - Fee Related
- 1997-06-27 DE DE19727397A patent/DE19727397B4/de not_active Expired - Fee Related
- 1997-06-27 CN CN97111869A patent/CN1085412C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH1093055A (ja) | 1998-04-10 |
CN1177212A (zh) | 1998-03-25 |
DE19727397A1 (de) | 1998-01-02 |
DE19727397B4 (de) | 2004-08-19 |
KR980006428A (ko) | 1998-03-30 |
US5888869A (en) | 1999-03-30 |
KR100199382B1 (ko) | 1999-06-15 |
GB9712952D0 (en) | 1997-08-20 |
JP2777357B2 (ja) | 1998-07-16 |
GB2314678B (en) | 2001-04-25 |
GB2314678A (en) | 1998-01-07 |
CN1085412C (zh) | 2002-05-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |