TW328654B - The electrically programmable memory cell array and its manufacturing method - Google Patents
The electrically programmable memory cell array and its manufacturing methodInfo
- Publication number
- TW328654B TW328654B TW086100068A TW86100068A TW328654B TW 328654 B TW328654 B TW 328654B TW 086100068 A TW086100068 A TW 086100068A TW 86100068 A TW86100068 A TW 86100068A TW 328654 B TW328654 B TW 328654B
- Authority
- TW
- Taiwan
- Prior art keywords
- cell array
- memory cell
- electrically programmable
- programmable memory
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19600423A DE19600423C2 (de) | 1996-01-08 | 1996-01-08 | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
TW328654B true TW328654B (en) | 1998-03-21 |
Family
ID=7782303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086100068A TW328654B (en) | 1996-01-08 | 1997-01-06 | The electrically programmable memory cell array and its manufacturing method |
Country Status (6)
Country | Link |
---|---|
US (1) | US6191459B1 (zh) |
EP (1) | EP0783181A1 (zh) |
JP (1) | JPH09199620A (zh) |
KR (1) | KR970060507A (zh) |
DE (1) | DE19600423C2 (zh) |
TW (1) | TW328654B (zh) |
Families Citing this family (52)
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DE19640235C2 (de) * | 1996-09-30 | 2001-10-25 | Infineon Technologies Ag | Halbleiter-Festwertspeicher mit in Grabenseitenwänden vertikal verlaufenden Transistoren und Verfahren zu seiner Herstellung |
KR100223915B1 (ko) * | 1996-10-22 | 1999-10-15 | 구본준 | 반도체 소자의 구조 및 제조방법 |
US5907771A (en) * | 1997-09-30 | 1999-05-25 | Siemens Aktiengesellschaft | Reduction of pad erosion |
TW406419B (en) * | 1998-01-15 | 2000-09-21 | Siemens Ag | Memory-cells arrangement and its production method |
DE19808182C1 (de) * | 1998-02-26 | 1999-08-12 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und ein Verfahren zu deren Herstellung |
EP1068645B1 (de) * | 1998-03-24 | 2014-05-07 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu ihrer herstellung |
JP3654630B2 (ja) | 1998-12-04 | 2005-06-02 | インフィネオン テクノロジース エスシー300 ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト | 半導体製造での微細構造表面の製造プロセスを光学的にコントロールする方法および装置 |
JP2002539611A (ja) * | 1999-03-09 | 2002-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 不揮発性メモリを有する半導体装置 |
US6204529B1 (en) * | 1999-08-27 | 2001-03-20 | Hsing Lan Lung | 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
US6348394B1 (en) * | 2000-05-18 | 2002-02-19 | International Business Machines Corporation | Method and device for array threshold voltage control by trapped charge in trench isolation |
JP2004517464A (ja) | 2000-08-11 | 2004-06-10 | インフィネオン テクノロジーズ アクチェンゲゼルシャフト | メモリセル、メモリセルの構成および作製方法 |
US6580124B1 (en) * | 2000-08-14 | 2003-06-17 | Matrix Semiconductor Inc. | Multigate semiconductor device with vertical channel current and method of fabrication |
JP5792918B2 (ja) | 2000-08-14 | 2015-10-14 | サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニーSandisk 3D Llc | 高集積メモリデバイス |
US6583479B1 (en) * | 2000-10-16 | 2003-06-24 | Advanced Micro Devices, Inc. | Sidewall NROM and method of manufacture thereof for non-volatile memory cells |
KR100483035B1 (ko) * | 2001-03-30 | 2005-04-15 | 샤프 가부시키가이샤 | 반도체 기억장치 및 그 제조방법 |
DE10129958B4 (de) * | 2001-06-21 | 2006-07-13 | Infineon Technologies Ag | Speicherzellenanordnung und Herstellungsverfahren |
DE10130766B4 (de) * | 2001-06-26 | 2005-08-11 | Infineon Technologies Ag | Vertikal-Transistor, Speicheranordnung sowie Verfahren zum Herstellen eines Vertikal-Transistors |
DE10130765A1 (de) * | 2001-06-26 | 2003-01-09 | Infineon Technologies Ag | Transistor-Anordnung, Verfahren zum Betreiben einer Transistor-Anordnung als Datenspeicher und Verfahren zum Herstellen einer Transistor-Anordnung |
US6462387B1 (en) * | 2001-06-29 | 2002-10-08 | Chinatech Corporation | High density read only memory |
US6841813B2 (en) * | 2001-08-13 | 2005-01-11 | Matrix Semiconductor, Inc. | TFT mask ROM and method for making same |
US6963103B2 (en) * | 2001-08-30 | 2005-11-08 | Micron Technology, Inc. | SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US7476925B2 (en) * | 2001-08-30 | 2009-01-13 | Micron Technology, Inc. | Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators |
US7087954B2 (en) * | 2001-08-30 | 2006-08-08 | Micron Technology, Inc. | In service programmable logic arrays with low tunnel barrier interpoly insulators |
US7068544B2 (en) * | 2001-08-30 | 2006-06-27 | Micron Technology, Inc. | Flash memory with low tunnel barrier interpoly insulators |
US7132711B2 (en) * | 2001-08-30 | 2006-11-07 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US6778441B2 (en) * | 2001-08-30 | 2004-08-17 | Micron Technology, Inc. | Integrated circuit memory device and method |
JP2003078048A (ja) * | 2001-09-04 | 2003-03-14 | Sony Corp | 不揮発性半導体メモリ装置およびその動作方法 |
DE10204868B4 (de) * | 2002-02-06 | 2007-08-23 | Infineon Technologies Ag | Speicherzelle mit Grabenspeichertransistor und Oxid-Nitrid-Oxid-Dielektrikum |
KR100487523B1 (ko) * | 2002-04-15 | 2005-05-03 | 삼성전자주식회사 | 부유트랩형 비휘발성 메모리 소자 및 그 제조방법 |
JP2003309192A (ja) * | 2002-04-17 | 2003-10-31 | Fujitsu Ltd | 不揮発性半導体メモリおよびその製造方法 |
DE10227605A1 (de) * | 2002-06-20 | 2004-01-15 | Infineon Technologies Ag | Schicht-Anordnung und Verfahren zum Herstellen einer Schicht-Anordnung |
EP1530803A2 (en) * | 2002-06-21 | 2005-05-18 | Micron Technology, Inc. | Nrom memory cell, memory array, related devices an methods |
DE10240893A1 (de) | 2002-09-04 | 2004-03-18 | Infineon Technologies Ag | Verfahren zur Herstellung von SONOS-Speicherzellen, SONOS-Speicherzelle und Speicherzellenfeld |
US6784483B2 (en) * | 2002-09-04 | 2004-08-31 | Macronix International Co., Ltd. | Method for preventing hole and electron movement in NROM devices |
DE10241172B4 (de) | 2002-09-05 | 2008-01-10 | Qimonda Ag | Halbleiterspeicher mit vertikalen Speichertransistoren und Verfahren zu dessen Herstellung |
US6858899B2 (en) * | 2002-10-15 | 2005-02-22 | Matrix Semiconductor, Inc. | Thin film transistor with metal oxide layer and method of making same |
TW583755B (en) * | 2002-11-18 | 2004-04-11 | Nanya Technology Corp | Method for fabricating a vertical nitride read-only memory (NROM) cell |
US6979857B2 (en) * | 2003-07-01 | 2005-12-27 | Micron Technology, Inc. | Apparatus and method for split gate NROM memory |
TW588438B (en) * | 2003-08-08 | 2004-05-21 | Nanya Technology Corp | Multi-bit vertical memory cell and method of fabricating the same |
US6965143B2 (en) * | 2003-10-10 | 2005-11-15 | Advanced Micro Devices, Inc. | Recess channel flash architecture for reduced short channel effect |
US7241654B2 (en) * | 2003-12-17 | 2007-07-10 | Micron Technology, Inc. | Vertical NROM NAND flash memory array |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
TWI288473B (en) * | 2005-10-05 | 2007-10-11 | Promos Technologies Inc | Flash memory structure and method for fabricating the same |
US7795088B2 (en) * | 2007-05-25 | 2010-09-14 | Macronix International Co., Ltd. | Method for manufacturing memory cell |
JP5405737B2 (ja) * | 2007-12-20 | 2014-02-05 | スパンション エルエルシー | 半導体装置およびその製造方法 |
DE102007062390B3 (de) * | 2007-12-22 | 2009-04-02 | Michael Kaden | Wirbelschichtfeuerung |
JP4487221B1 (ja) * | 2009-04-17 | 2010-06-23 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体装置 |
KR101133701B1 (ko) * | 2010-09-10 | 2012-04-06 | 주식회사 하이닉스반도체 | 매립비트라인을 구비한 반도체장치 제조 방법 |
US9627395B2 (en) | 2015-02-11 | 2017-04-18 | Sandisk Technologies Llc | Enhanced channel mobility three-dimensional memory structure and method of making thereof |
US9478495B1 (en) | 2015-10-26 | 2016-10-25 | Sandisk Technologies Llc | Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
TWI684565B (zh) | 2016-08-26 | 2020-02-11 | 聯華電子股份有限公司 | 半導體感測器及其製造方法 |
US10950618B2 (en) * | 2018-11-29 | 2021-03-16 | Micron Technology, Inc. | Memory arrays |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047974A (en) * | 1975-12-30 | 1977-09-13 | Hughes Aircraft Company | Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states |
DE3032364C2 (de) * | 1980-08-28 | 1987-11-12 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Elektrisch programmierbarer Halbleiter-Festwertspeicher und Verfahren zu seiner Herstellung |
US4774556A (en) * | 1985-07-25 | 1988-09-27 | Nippondenso Co., Ltd. | Non-volatile semiconductor memory device |
JPH031574A (ja) * | 1989-05-29 | 1991-01-08 | Hitachi Ltd | 不揮発性半導体記憶装置およびその製造方法 |
JPH04226071A (ja) * | 1990-05-16 | 1992-08-14 | Ricoh Co Ltd | 半導体メモリ装置 |
US5180680A (en) * | 1991-05-17 | 1993-01-19 | United Microelectronics Corporation | Method of fabricating electrically erasable read only memory cell |
JPH0567791A (ja) * | 1991-06-20 | 1993-03-19 | Mitsubishi Electric Corp | 電気的に書込および消去可能な半導体記憶装置およびその製造方法 |
JPH05251669A (ja) | 1992-03-06 | 1993-09-28 | Matsushita Electron Corp | 半導体記憶装置およびその書き換え方法 |
US5467305A (en) * | 1992-03-12 | 1995-11-14 | International Business Machines Corporation | Three-dimensional direct-write EEPROM arrays and fabrication methods |
JPH05326976A (ja) * | 1992-05-20 | 1993-12-10 | Rohm Co Ltd | 半導体記憶装置およびその製法 |
JP3167457B2 (ja) * | 1992-10-22 | 2001-05-21 | 株式会社東芝 | 半導体装置 |
US5460988A (en) * | 1994-04-25 | 1995-10-24 | United Microelectronics Corporation | Process for high density flash EPROM cell |
US5453637A (en) * | 1994-05-18 | 1995-09-26 | United Microelectronics Corp. | Read-only memory cell configuration with steep trenches |
US5705415A (en) * | 1994-10-04 | 1998-01-06 | Motorola, Inc. | Process for forming an electrically programmable read-only memory cell |
-
1996
- 1996-01-08 DE DE19600423A patent/DE19600423C2/de not_active Expired - Fee Related
- 1996-12-13 EP EP96120099A patent/EP0783181A1/de not_active Withdrawn
-
1997
- 1997-01-06 TW TW086100068A patent/TW328654B/zh active
- 1997-01-06 JP JP9010089A patent/JPH09199620A/ja active Pending
- 1997-01-08 US US08/780,488 patent/US6191459B1/en not_active Expired - Lifetime
- 1997-01-08 KR KR1019970000221A patent/KR970060507A/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0783181A1 (de) | 1997-07-09 |
KR970060507A (ko) | 1997-08-12 |
DE19600423A1 (de) | 1997-07-17 |
US6191459B1 (en) | 2001-02-20 |
DE19600423C2 (de) | 2001-07-05 |
JPH09199620A (ja) | 1997-07-31 |
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