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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW84100107ApriorityCriticalpatent/TW258833B/en
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Publication of TW258833BpublicationCriticalpatent/TW258833B/en
A structure of flash memory cell includes: (1) one first-type semiconductor substrate with the second-type doped source and drain, and forming channel area between the above source and drain area; (2) one floating gate formed insulatedly the above channel area close to the above drain area side; (3) one conductive sidewall spacer formed insulatedly on the above floating gate and conductive sidewall spacer.
TW84100107A1995-01-091995-01-09Structure of flash memory cell and process thereof
TW258833B
(en)