Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83104874ApriorityCriticalpatent/TW247372B/en
Application grantedgrantedCritical
Publication of TW247372BpublicationCriticalpatent/TW247372B/en
A read only memory element with polysilicon trench structure comprising: - a Si substrate on which there forms multiple source/drain electrodes with parallel arrangement, extending to first direction, and deep in substrate vertically; - a multiple polysilicon gate arranged in second direction, forming transistor structure by isolating source/drain electrode with gate oxide, where the area between two different source/drain under gate is channel in which the second direction is perpendicular intersection with the first direction.
TW83104874A1994-05-281994-05-28Read only memory element
TW247372B
(en)