TW296489B - - Google Patents

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Publication number
TW296489B
TW296489B TW085105204A TW85105204A TW296489B TW 296489 B TW296489 B TW 296489B TW 085105204 A TW085105204 A TW 085105204A TW 85105204 A TW85105204 A TW 85105204A TW 296489 B TW296489 B TW 296489B
Authority
TW
Taiwan
Prior art keywords
layer
bonding layer
bonding
mixed crystal
crystal ratio
Prior art date
Application number
TW085105204A
Other languages
English (en)
Chinese (zh)
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW296489B publication Critical patent/TW296489B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW085105204A 1995-04-14 1996-05-01 TW296489B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8951095A JPH08288544A (ja) 1995-04-14 1995-04-14 半導体発光素子

Publications (1)

Publication Number Publication Date
TW296489B true TW296489B (ja) 1997-01-21

Family

ID=13972789

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085105204A TW296489B (ja) 1995-04-14 1996-05-01

Country Status (3)

Country Link
US (2) US5732098A (ja)
JP (1) JPH08288544A (ja)
TW (1) TW296489B (ja)

Families Citing this family (36)

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US6996150B1 (en) * 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08288544A (ja) * 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
JP3713100B2 (ja) 1996-05-23 2005-11-02 ローム株式会社 半導体発光素子の製法
JPH104240A (ja) * 1996-06-17 1998-01-06 Furukawa Electric Co Ltd:The 半導体光素子、ウエハ及びその製造方法
JP3097570B2 (ja) * 1996-09-26 2000-10-10 日本電気株式会社 Ｉｉ−ｖｉ族化合物半導体およびその製造方法
US6258619B1 (en) 1996-12-06 2001-07-10 Rohm Ltd Fabrication of semiconductor light emitting device
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US20010020703A1 (en) * 1998-07-24 2001-09-13 Nathan F. Gardner Algainp light emitting devices with thin active layers
TW399344B (en) * 1998-09-09 2000-07-21 Jan Shr Shiung High intensity light emitting diode (LED) and the manufacturing method thereof
JP3698402B2 (ja) 1998-11-30 2005-09-21 シャープ株式会社 発光ダイオード
US6430202B1 (en) * 1999-04-09 2002-08-06 Xerox Corporation Structure and method for asymmetric waveguide nitride laser diode
JP4024463B2 (ja) * 1999-09-27 2007-12-19 シャープ株式会社 半導体発光素子の製造方法
JP2001274456A (ja) 2000-01-18 2001-10-05 Sharp Corp 発光ダイオード
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP2002111052A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体発光素子及びその製造方法
JP2002111134A (ja) 2000-09-29 2002-04-12 Toshiba Corp 半導体レーザ装置
JP5283293B2 (ja) * 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
US6775314B1 (en) * 2001-11-29 2004-08-10 Sandia Corporation Distributed bragg reflector using AIGaN/GaN
JP2003289176A (ja) * 2002-01-24 2003-10-10 Sony Corp 半導体発光素子およびその製造方法
JP2004288799A (ja) * 2003-03-20 2004-10-14 Sony Corp 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法
KR101034055B1 (ko) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
US6967346B2 (en) * 2003-08-02 2005-11-22 Formosa Epitaxy Incorporation Light emitting diode structure and manufacture method thereof
EP1697983B1 (en) * 2003-12-09 2012-06-13 The Regents of The University of California Highly efficient gallium nitride based light emitting diodes having surface roughening
US7196835B2 (en) * 2004-06-01 2007-03-27 The Trustees Of Princeton University Aperiodic dielectric multilayer stack
KR100616596B1 (ko) * 2004-07-09 2006-08-28 삼성전기주식회사 질화물 반도체 소자 및 제조방법
US7307516B2 (en) * 2004-08-22 2007-12-11 Wiegner Thomas F Instrument viewing display system for motorcycles
JP2006120668A (ja) * 2004-10-19 2006-05-11 Mitsubishi Electric Corp 半導体レーザ
JP2007096267A (ja) * 2005-08-30 2007-04-12 Hitachi Cable Ltd 半導体発光素子用エピタキシャルウェハ及びその製造方法並びに半導体発光素子
TWI452716B (zh) * 2007-06-08 2014-09-11 Formosa Epitaxy Inc Gallium nitride based light emitting diode and manufacturing method thereof
TWI341600B (en) * 2007-08-31 2011-05-01 Huga Optotech Inc Light optoelectronic device and forming method thereof
US8403885B2 (en) 2007-12-17 2013-03-26 Abbott Cardiovascular Systems Inc. Catheter having transitioning shaft segments
TWI473292B (zh) * 2008-12-15 2015-02-11 Lextar Electronics Corp 發光二極體晶片
JP2011054862A (ja) * 2009-09-04 2011-03-17 Hitachi Cable Ltd エピタキシャルウエハ、発光素子、エピタキシャルウエハの製造方法、及び発光素子の製造方法
KR20130137295A (ko) * 2012-06-07 2013-12-17 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP6325948B2 (ja) * 2014-09-02 2018-05-16 株式会社東芝 半導体発光素子および光結合装置
CN105742433B (zh) * 2016-04-29 2018-03-02 厦门市三安光电科技有限公司 一种AlGaInP发光二极管

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Publication number Priority date Publication date Assignee Title
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
JPH0212885A (ja) * 1988-06-29 1990-01-17 Nec Corp 半導体レーザ及びその出射ビームの垂直放射角の制御方法
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JPH039515A (ja) * 1989-06-07 1991-01-17 Sharp Corp 半導体装置
JPH04247676A (ja) * 1991-02-01 1992-09-03 Nippon Telegr & Teleph Corp <Ntt> 面発光半導体モードロックレーザ
JP3242967B2 (ja) * 1992-01-31 2001-12-25 株式会社東芝 半導体発光素子
JPH05235312A (ja) * 1992-02-19 1993-09-10 Fujitsu Ltd 半導体基板及びその製造方法
JP3373561B2 (ja) * 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
EP1450415A3 (en) * 1993-04-28 2005-05-04 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
BE1007251A3 (nl) * 1993-06-28 1995-05-02 Philips Electronics Nv Straling-emitterende halfgeleiderdiode en werkwijze ter vervaardiging daarvan.
US5537433A (en) * 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
JPH0766455A (ja) * 1993-08-24 1995-03-10 Shin Etsu Handotai Co Ltd 半導体発光装置
JPH07162089A (ja) * 1993-12-13 1995-06-23 Mitsubishi Electric Corp 可視光レーザダイオード及びその製造方法
JPH07235733A (ja) * 1993-12-27 1995-09-05 Sanyo Electric Co Ltd 半導体レーザ素子
JPH07231142A (ja) * 1994-02-18 1995-08-29 Mitsubishi Electric Corp 半導体発光素子
JP3293996B2 (ja) * 1994-03-15 2002-06-17 株式会社東芝 半導体装置
DE69517614T2 (de) * 1994-03-22 2001-02-15 Uniphase Opto Holdings Inc Halbleiterdiodenlaser und dessen Herstellungsverfahren
JPH07281619A (ja) * 1994-04-04 1995-10-27 Rohm Co Ltd Ｌｅｄランプ、およびその基板への取付け構造
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
JPH08288544A (ja) * 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子

Also Published As

Publication number Publication date
JPH08288544A (ja) 1996-11-01
US5732098A (en) 1998-03-24
US6229834B1 (en) 2001-05-08

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