TW201930630A - 用於產生含金屬薄膜的方法 - Google Patents
用於產生含金屬薄膜的方法 Download PDFInfo
- Publication number
- TW201930630A TW201930630A TW107145710A TW107145710A TW201930630A TW 201930630 A TW201930630 A TW 201930630A TW 107145710 A TW107145710 A TW 107145710A TW 107145710 A TW107145710 A TW 107145710A TW 201930630 A TW201930630 A TW 201930630A
- Authority
- TW
- Taiwan
- Prior art keywords
- compound
- metal
- formula
- film
- group
- Prior art date
Links
- 239000002184 metal Substances 0.000 title claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 57
- 230000008569 process Effects 0.000 title abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 157
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000007787 solid Substances 0.000 claims abstract description 35
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 25
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 19
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 18
- 125000003118 aryl group Chemical group 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- -1 trimethyldecyl Chemical group 0.000 claims description 56
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910001507 metal halide Inorganic materials 0.000 claims description 3
- 150000005309 metal halides Chemical class 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 abstract 2
- 239000010408 film Substances 0.000 description 75
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 58
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 27
- 239000000243 solution Substances 0.000 description 22
- 239000000203 mixture Substances 0.000 description 18
- 241000208340 Araliaceae Species 0.000 description 15
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 15
- 235000003140 Panax quinquefolius Nutrition 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 15
- 235000008434 ginseng Nutrition 0.000 description 15
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 238000000354 decomposition reaction Methods 0.000 description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 239000002243 precursor Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 229910001868 water Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910010082 LiAlH Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- 239000000376 reactant Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000003446 ligand Substances 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- SPRIOUNJHPCKPV-UHFFFAOYSA-N hydridoaluminium Chemical compound [AlH] SPRIOUNJHPCKPV-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical group 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 150000004696 coordination complex Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000012223 aqueous fraction Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000012267 brine Substances 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012043 crude product Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 235000019439 ethyl acetate Nutrition 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002429 hydrazines Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- XGPPSKSOIFNAMM-UHFFFAOYSA-N n-tert-butyl-n',n'-dimethylethane-1,2-diamine Chemical compound CN(C)CCNC(C)(C)C XGPPSKSOIFNAMM-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229910052713 technetium Inorganic materials 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000005292 vacuum distillation Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
- KZPYGQFFRCFCPP-UHFFFAOYSA-N 1,1'-bis(diphenylphosphino)ferrocene Chemical compound [Fe+2].C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1 KZPYGQFFRCFCPP-UHFFFAOYSA-N 0.000 description 1
- MZEKAHGOAYZCSP-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6-dodecamethylcyclohexane Chemical compound CC1(C)C(C)(C)C(C)(C)C(C)(C)C(C)(C)C1(C)C MZEKAHGOAYZCSP-UHFFFAOYSA-N 0.000 description 1
- DHBZRQXIRAEMRO-UHFFFAOYSA-N 1,1,2,2-tetramethylhydrazine Chemical compound CN(C)N(C)C DHBZRQXIRAEMRO-UHFFFAOYSA-N 0.000 description 1
- 125000006002 1,1-difluoroethyl group Chemical group 0.000 description 1
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- FSNGFFWICFYWQC-UHFFFAOYSA-N 1-(2-chloroethyl)pyrrolidine;hydron;chloride Chemical compound Cl.ClCCN1CCCC1 FSNGFFWICFYWQC-UHFFFAOYSA-N 0.000 description 1
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 1
- 125000006017 1-propenyl group Chemical group 0.000 description 1
- ACYKYDRFAMWELS-UHFFFAOYSA-N 2,2,3,3,5-pentamethyl-1,4-dioxane Chemical compound CC1COC(C)(C)C(C)(C)O1 ACYKYDRFAMWELS-UHFFFAOYSA-N 0.000 description 1
- KLKRGCUPZROPPO-UHFFFAOYSA-N 2,2,6-trimethylheptane-3,5-dione Chemical compound CC(C)C(=O)CC(=O)C(C)(C)C KLKRGCUPZROPPO-UHFFFAOYSA-N 0.000 description 1
- LQLJZSJKRYTKTP-UHFFFAOYSA-N 2-dimethylaminoethyl chloride hydrochloride Chemical compound Cl.CN(C)CCCl LQLJZSJKRYTKTP-UHFFFAOYSA-N 0.000 description 1
- OFYFURKXMHQOGG-UHFFFAOYSA-J 2-ethylhexanoate;zirconium(4+) Chemical compound [Zr+4].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O OFYFURKXMHQOGG-UHFFFAOYSA-J 0.000 description 1
- 125000005916 2-methylpentyl group Chemical group 0.000 description 1
- HCVDENZMQSPJRI-UHFFFAOYSA-N 3,3,4-triethyldodecane Chemical compound CCCCCCCCC(CC)C(CC)(CC)CC HCVDENZMQSPJRI-UHFFFAOYSA-N 0.000 description 1
- LJQNMDZRCXJETK-UHFFFAOYSA-N 3-chloro-n,n-dimethylpropan-1-amine;hydron;chloride Chemical compound Cl.CN(C)CCCCl LJQNMDZRCXJETK-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- SXPGQGNWEWPWQZ-UHFFFAOYSA-N 4-(triethoxymethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SXPGQGNWEWPWQZ-UHFFFAOYSA-N 0.000 description 1
- HCZMGGZMGYXSQQ-UHFFFAOYSA-N 5-chloropyridazin-1-ium;chloride Chemical compound Cl.ClC1=CC=NN=C1 HCZMGGZMGYXSQQ-UHFFFAOYSA-N 0.000 description 1
- SQNZLBOJCWQLGQ-UHFFFAOYSA-N 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyloctane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(F)(F)C(F)(F)C(F)(F)F SQNZLBOJCWQLGQ-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- GKEHRUGDJIAZCC-UHFFFAOYSA-N C(=CC=CC)[WH3] Chemical compound C(=CC=CC)[WH3] GKEHRUGDJIAZCC-UHFFFAOYSA-N 0.000 description 1
- NMGMAOIYXASREJ-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Mn]C1(C=CC=C1)CC Chemical compound C(C)C1(C=CC=C1)[Mn]C1(C=CC=C1)CC NMGMAOIYXASREJ-UHFFFAOYSA-N 0.000 description 1
- VWHXTCKWIVCDGV-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ni]C1(C=CC=C1)CC Chemical compound C(C)C1(C=CC=C1)[Ni]C1(C=CC=C1)CC VWHXTCKWIVCDGV-UHFFFAOYSA-N 0.000 description 1
- WEHOWPRPYYXMDZ-UHFFFAOYSA-N C(C)N(C)[Ru].[Ru] Chemical compound C(C)N(C)[Ru].[Ru] WEHOWPRPYYXMDZ-UHFFFAOYSA-N 0.000 description 1
- DIPXTVLCYMWSKS-UHFFFAOYSA-N C(C)N(C)[Ti].[Bi] Chemical compound C(C)N(C)[Ti].[Bi] DIPXTVLCYMWSKS-UHFFFAOYSA-N 0.000 description 1
- ZEWSJCNJKMVJBK-UHFFFAOYSA-N C(C)N(C)[Zr].[Ce] Chemical compound C(C)N(C)[Zr].[Ce] ZEWSJCNJKMVJBK-UHFFFAOYSA-N 0.000 description 1
- CDDPZZJDPRMDJW-UHFFFAOYSA-N C(C)N(CC)[Ru].NN Chemical compound C(C)N(CC)[Ru].NN CDDPZZJDPRMDJW-UHFFFAOYSA-N 0.000 description 1
- HAOUVKDOTCHSCV-UHFFFAOYSA-N C(C)N(CC)[Ti].[Ru] Chemical compound C(C)N(CC)[Ti].[Ru] HAOUVKDOTCHSCV-UHFFFAOYSA-N 0.000 description 1
- CSEJHCHRZAWYGU-UHFFFAOYSA-N C(C)N(CC)[Zr].[Ce] Chemical compound C(C)N(CC)[Zr].[Ce] CSEJHCHRZAWYGU-UHFFFAOYSA-N 0.000 description 1
- VRRWIMLNYRJGRU-UHFFFAOYSA-N C(C)O[Ir](OCC)OCC Chemical compound C(C)O[Ir](OCC)OCC VRRWIMLNYRJGRU-UHFFFAOYSA-N 0.000 description 1
- JQZQORSQVYZFMB-UHFFFAOYSA-N C(C)[Pt](C1(C=CC=C1)C)(CC)CC Chemical compound C(C)[Pt](C1(C=CC=C1)C)(CC)CC JQZQORSQVYZFMB-UHFFFAOYSA-N 0.000 description 1
- JMOVYCBDDUHNPA-UHFFFAOYSA-N C(CCC)C1(C=CC=C1)[Ru] Chemical compound C(CCC)C1(C=CC=C1)[Ru] JMOVYCBDDUHNPA-UHFFFAOYSA-N 0.000 description 1
- FJVPRUNMUOEFSU-UHFFFAOYSA-L C(CCC)C1(C=CC=C1)[W](C1(C=CC=C1)CCCC)(I)I Chemical compound C(CCC)C1(C=CC=C1)[W](C1(C=CC=C1)CCCC)(I)I FJVPRUNMUOEFSU-UHFFFAOYSA-L 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- IQIBJWGNYKLCKR-UHFFFAOYSA-N CC(C)(C)C(=O)CC(=O)C(C)(C)C[Zn]CC(C)(C)C(=O)CC(=O)C(C)(C)C Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C[Zn]CC(C)(C)C(=O)CC(=O)C(C)(C)C IQIBJWGNYKLCKR-UHFFFAOYSA-N 0.000 description 1
- SJPFZRACRCONRE-UHFFFAOYSA-N CC(C)(C)N[W](NC(C)(C)C)(=NC(C)(C)C)=NC(C)(C)C Chemical compound CC(C)(C)N[W](NC(C)(C)C)(=NC(C)(C)C)=NC(C)(C)C SJPFZRACRCONRE-UHFFFAOYSA-N 0.000 description 1
- LZQNQHLPMMONOW-UHFFFAOYSA-N CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C.CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C.CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C LZQNQHLPMMONOW-UHFFFAOYSA-N 0.000 description 1
- QGAQUPWGYRMJAR-UHFFFAOYSA-N CC(CCCCCCCCCN(CCCCCCCCCC(C)(C)C)[Sn]N(CCCCCCCCCC(C)(C)C)CCCCCCCCCC(C)(C)C)(C)C Chemical compound CC(CCCCCCCCCN(CCCCCCCCCC(C)(C)C)[Sn]N(CCCCCCCCCC(C)(C)C)CCCCCCCCCC(C)(C)C)(C)C QGAQUPWGYRMJAR-UHFFFAOYSA-N 0.000 description 1
- LIEOGMBLMOOSAY-UHFFFAOYSA-N CC1=C(C)C(C)([Mg]C2(C)C(C)=C(C)C(C)=C2C)C(C)=C1C Chemical compound CC1=C(C)C(C)([Mg]C2(C)C(C)=C(C)C(C)=C2C)C(C)=C1C LIEOGMBLMOOSAY-UHFFFAOYSA-N 0.000 description 1
- JTZDPMPLZSQYOW-UHFFFAOYSA-N CCCCO[Ru](OCCCC)OCCCC Chemical compound CCCCO[Ru](OCCCC)OCCCC JTZDPMPLZSQYOW-UHFFFAOYSA-N 0.000 description 1
- BPYJCNRFSUNLGN-UHFFFAOYSA-N CN(C)[Ru].[Ru] Chemical compound CN(C)[Ru].[Ru] BPYJCNRFSUNLGN-UHFFFAOYSA-N 0.000 description 1
- ZPRZXGYCBBXKMC-UHFFFAOYSA-N CN(C)[Ti].[Ru] Chemical compound CN(C)[Ti].[Ru] ZPRZXGYCBBXKMC-UHFFFAOYSA-N 0.000 description 1
- DDHRLCQWMVMJBZ-UHFFFAOYSA-N CN(C)[W](NC(C)(C)C)(NC(C)(C)C)N(C)C Chemical compound CN(C)[W](NC(C)(C)C)(NC(C)(C)C)N(C)C DDHRLCQWMVMJBZ-UHFFFAOYSA-N 0.000 description 1
- KYPOTCHOVIFPTJ-UHFFFAOYSA-N CO[Ti](OC)(OC)C1(C)C(C)=C(C)C(C)=C1C Chemical compound CO[Ti](OC)(OC)C1(C)C(C)=C(C)C(C)=C1C KYPOTCHOVIFPTJ-UHFFFAOYSA-N 0.000 description 1
- HWIAOHSBQMDGMX-UHFFFAOYSA-N C[Ru](C1C=CC=C1)(C1C=CC=C1)C Chemical compound C[Ru](C1C=CC=C1)(C1C=CC=C1)C HWIAOHSBQMDGMX-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical class [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GAWFIVJVJLAHLF-UHFFFAOYSA-N ClC1(OC(C(OC1)(C)C)(C)C)C Chemical compound ClC1(OC(C(OC1)(C)C)(C)C)C GAWFIVJVJLAHLF-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- YHAYIJLQKPMRAW-UHFFFAOYSA-N N-alumanyl-N-methylmethanamine Chemical compound CN(C)[AlH2] YHAYIJLQKPMRAW-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- ODUCDPQEXGNKDN-UHFFFAOYSA-N Nitrogen oxide(NO) Natural products O=N ODUCDPQEXGNKDN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- WZWNSCNUQWSNEL-UHFFFAOYSA-J [Br-].[Br-].[Br-].[Br-].[Cs+].[Cs+].[Cs+].[Cs+] Chemical compound [Br-].[Br-].[Br-].[Br-].[Cs+].[Cs+].[Cs+].[Cs+] WZWNSCNUQWSNEL-UHFFFAOYSA-J 0.000 description 1
- WGOYFFOJWOIRCU-UHFFFAOYSA-N [Cl-].[Cl-].C1(C=CC=C1)[PH2+]C1C=CC=C1.C1(C=CC=C1)[PH2+]C1C=CC=C1 Chemical compound [Cl-].[Cl-].C1(C=CC=C1)[PH2+]C1C=CC=C1.C1(C=CC=C1)[PH2+]C1C=CC=C1 WGOYFFOJWOIRCU-UHFFFAOYSA-N 0.000 description 1
- FBBFQFYTYZPQTH-UHFFFAOYSA-N [Mn].CC(C)(C(CC(C(C)(C)C)=O)=O)C.CC(C)(C(CC(C(C)(C)C)=O)=O)C Chemical compound [Mn].CC(C)(C(CC(C(C)(C)C)=O)=O)C.CC(C)(C(CC(C(C)(C)C)=O)=O)C FBBFQFYTYZPQTH-UHFFFAOYSA-N 0.000 description 1
- DEIHRWXJCZMTHF-UHFFFAOYSA-N [Mn].[CH]1C=CC=C1 Chemical compound [Mn].[CH]1C=CC=C1 DEIHRWXJCZMTHF-UHFFFAOYSA-N 0.000 description 1
- JCUIKKKBMZYJPM-UHFFFAOYSA-N [Mo+4].C[N-]C.C[N-]C.CC(C)(C)[NH-].CC(C)(C)[NH-] Chemical compound [Mo+4].C[N-]C.C[N-]C.CC(C)(C)[NH-].CC(C)(C)[NH-] JCUIKKKBMZYJPM-UHFFFAOYSA-N 0.000 description 1
- FCIBCALVQNVXGB-UHFFFAOYSA-N [Ru].[CH]1C=CC=C1 Chemical compound [Ru].[CH]1C=CC=C1 FCIBCALVQNVXGB-UHFFFAOYSA-N 0.000 description 1
- LKRMGNHUAYXLJF-UHFFFAOYSA-N [V].CCc1cccc1.CCc1cccc1 Chemical compound [V].CCc1cccc1.CCc1cccc1 LKRMGNHUAYXLJF-UHFFFAOYSA-N 0.000 description 1
- RGRRGTKWJMJUDG-UHFFFAOYSA-L [W+2](Cl)Cl Chemical compound [W+2](Cl)Cl RGRRGTKWJMJUDG-UHFFFAOYSA-L 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical compound [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- KDKNVCQXFIBDBD-UHFFFAOYSA-N carbanide;1,2,3,4,5-pentamethylcyclopentane;zirconium(2+) Chemical compound [CH3-].[CH3-].[Zr+2].C[C]1[C](C)[C](C)[C](C)[C]1C.C[C]1[C](C)[C](C)[C](C)[C]1C KDKNVCQXFIBDBD-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- URZAVABIRGHJEB-XRGHXPOKSA-N carbon monoxide;(1z,5z)-cycloocta-1,5-diene;tungsten Chemical compound [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].C\1C\C=C/CC\C=C/1 URZAVABIRGHJEB-XRGHXPOKSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- TYYBBNOTQFVVKN-UHFFFAOYSA-N chromium(2+);cyclopenta-1,3-diene Chemical compound [Cr+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 TYYBBNOTQFVVKN-UHFFFAOYSA-N 0.000 description 1
- BFGKITSFLPAWGI-UHFFFAOYSA-N chromium(3+) Chemical compound [Cr+3] BFGKITSFLPAWGI-UHFFFAOYSA-N 0.000 description 1
- GEYKKJXGTKHSDI-UHFFFAOYSA-N chromium;1,2,3,4,5-pentamethylcyclopentane Chemical compound [Cr].C[C]1[C](C)[C](C)[C](C)[C]1C.C[C]1[C](C)[C](C)[C](C)[C]1C GEYKKJXGTKHSDI-UHFFFAOYSA-N 0.000 description 1
- PXIUWFOGFCZQSH-UHFFFAOYSA-N cobalt(2+);1,2,3,5,5-pentamethylcyclopenta-1,3-diene Chemical compound [Co+2].CC1=[C-]C(C)(C)C(C)=C1C.CC1=[C-]C(C)(C)C(C)=C1C PXIUWFOGFCZQSH-UHFFFAOYSA-N 0.000 description 1
- YHCQFTZSIGZRTR-UHFFFAOYSA-N cobalt;ethylcyclopentane Chemical compound [Co].CC[C]1[CH][CH][CH][CH]1.CC[C]1[CH][CH][CH][CH]1 YHCQFTZSIGZRTR-UHFFFAOYSA-N 0.000 description 1
- 239000012230 colorless oil Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- LAXIOTUSRGRRNA-UHFFFAOYSA-N cyclopenta-1,3-diene nickel Chemical compound [Ni].C1C=CC=C1.C1C=CC=C1 LAXIOTUSRGRRNA-UHFFFAOYSA-N 0.000 description 1
- KTKDULBCFYEWFV-UHFFFAOYSA-N cyclopenta-1,3-diene;vanadium(2+) Chemical compound [V+2].C1C=CC=[C-]1.C1C=CC=[C-]1 KTKDULBCFYEWFV-UHFFFAOYSA-N 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 125000004145 cyclopenten-1-yl group Chemical group [H]C1=C(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- PEHOSUBYCQFENM-UHFFFAOYSA-N dibutyl(phenyl)tin Chemical compound CCCC[Sn](CCCC)C1=CC=CC=C1 PEHOSUBYCQFENM-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- MKRVHLWAVKJBFN-UHFFFAOYSA-N diphenylzinc Chemical compound C=1C=CC=CC=1[Zn]C1=CC=CC=C1 MKRVHLWAVKJBFN-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GKKLDIHVIQZCPZ-UHFFFAOYSA-N ethylcyclopentane;iron Chemical compound [Fe].CC[C]1[CH][CH][CH][CH]1.CC[C]1[CH][CH][CH][CH]1 GKKLDIHVIQZCPZ-UHFFFAOYSA-N 0.000 description 1
- OJCSPXHYDFONPU-UHFFFAOYSA-N etoac etoac Chemical compound CCOC(C)=O.CCOC(C)=O OJCSPXHYDFONPU-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- OHMBHFSEKCCCBW-UHFFFAOYSA-N hexane-2,5-diol Chemical compound CC(O)CCC(C)O OHMBHFSEKCCCBW-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000003392 indanyl group Chemical group C1(CCC2=CC=CC=C12)* 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- ALEXWXWETMUIKL-UHFFFAOYSA-N manganese;1,2,3,4,5-pentamethylcyclopentane Chemical compound [Mn].C[C]1[C](C)[C](C)[C](C)[C]1C.C[C]1[C](C)[C](C)[C](C)[C]1C ALEXWXWETMUIKL-UHFFFAOYSA-N 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- YQEYRDNFGCRZLW-UHFFFAOYSA-N n-tert-butyl-n',n'-dimethylpropane-1,3-diamine Chemical compound CN(C)CCCNC(C)(C)C YQEYRDNFGCRZLW-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- QKOHYQVZNLEAJH-UHFFFAOYSA-N oxomethylidenemanganese Chemical compound O=C=[Mn] QKOHYQVZNLEAJH-UHFFFAOYSA-N 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- UYXWTYRQGBBXHB-UHFFFAOYSA-N platinum 1,2,3,4-tetramethylcyclopenta-1,3-diene Chemical compound [Pt].CC1=C(C(=C(C1)C)C)C UYXWTYRQGBBXHB-UHFFFAOYSA-N 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- GDYSYFFUCCKSCF-UHFFFAOYSA-N propan-2-ol;ruthenium Chemical compound [Ru].CC(C)O GDYSYFFUCCKSCF-UHFFFAOYSA-N 0.000 description 1
- BCWYYHBWCZYDNB-UHFFFAOYSA-N propan-2-ol;zirconium Chemical compound [Zr].CC(C)O.CC(C)O.CC(C)O.CC(C)O BCWYYHBWCZYDNB-UHFFFAOYSA-N 0.000 description 1
- VRMGPHYEHNLCQW-UHFFFAOYSA-N propan-2-ylcyclopentane;tungsten Chemical compound [W].CC(C)[C]1[CH][CH][CH][CH]1.CC(C)[C]1[CH][CH][CH][CH]1 VRMGPHYEHNLCQW-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 230000005588 protonation Effects 0.000 description 1
- 125000002577 pseudohalo group Chemical group 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 150000003303 ruthenium Chemical class 0.000 description 1
- IREVRWRNACELSM-UHFFFAOYSA-J ruthenium(4+);tetrachloride Chemical compound Cl[Ru](Cl)(Cl)Cl IREVRWRNACELSM-UHFFFAOYSA-J 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 1
- SZWHXXNVLACKBV-UHFFFAOYSA-N tetraethylphosphanium Chemical compound CC[P+](CC)(CC)CC SZWHXXNVLACKBV-UHFFFAOYSA-N 0.000 description 1
- CBIYWHCPXHKZME-UHFFFAOYSA-J tetrafluororuthenium Chemical compound [F-].[F-].[F-].[F-].[Ru+4] CBIYWHCPXHKZME-UHFFFAOYSA-J 0.000 description 1
- MZIYQMVHASXABC-UHFFFAOYSA-N tetrakis(ethenyl)stannane Chemical compound C=C[Sn](C=C)(C=C)C=C MZIYQMVHASXABC-UHFFFAOYSA-N 0.000 description 1
- XJPKDRJZNZMJQM-UHFFFAOYSA-N tetrakis(prop-2-enyl)stannane Chemical compound C=CC[Sn](CC=C)(CC=C)CC=C XJPKDRJZNZMJQM-UHFFFAOYSA-N 0.000 description 1
- BXYHVFRRNNWPMB-UHFFFAOYSA-N tetramethylphosphanium Chemical compound C[P+](C)(C)C BXYHVFRRNNWPMB-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- COHOGNZHAUOXPA-UHFFFAOYSA-N trimethyl(phenyl)stannane Chemical compound C[Sn](C)(C)C1=CC=CC=C1 COHOGNZHAUOXPA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- UAPQJVJCJITJET-UHFFFAOYSA-N triphenyltin Chemical compound C1=CC=CC=C1[Sn](C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1[Sn](C=1C=CC=CC=1)C1=CC=CC=C1 UAPQJVJCJITJET-UHFFFAOYSA-N 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- TURVSLXVJYZFII-UHFFFAOYSA-N zinc;1,2,3,4,5-pentafluorobenzene-6-ide Chemical compound [Zn+2].FC1=[C-]C(F)=C(F)C(F)=C1F.FC1=[C-]C(F)=C(F)C(F)=C1F TURVSLXVJYZFII-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
- C07F5/067—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage) compounds with Al also linked to H or halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/069—Aluminium compounds without C-aluminium linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/12—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Chemically Coating (AREA)
- Chemical Treatment Of Metals (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
本發明屬於用於製備無機含金屬薄膜之方法之領域。用於製備無機含金屬薄膜之該方法包含使固體基板與呈氣態之通式(I)或(II)化合物接觸
其中A為NR2 或OR,其中R為烷基、烯基、芳基或矽烷基,
E為NR或O,
n為1、2或3,且
R'為氫、烷基、烯基、芳基或矽烷基,
其中若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子。
其中A為NR2 或OR,其中R為烷基、烯基、芳基或矽烷基,
E為NR或O,
n為1、2或3,且
R'為氫、烷基、烯基、芳基或矽烷基,
其中若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子。
Description
本發明屬於在基板上產生無機含金屬薄膜之方法,詳言之係原子層沈積方法之領域。
隨著例如在半導體工業中正在進行的小型化發展,對基板上之薄無機膜之需求增加,同時對此類薄膜之品質的要求變得更加嚴格。薄無機含金屬膜為不同目的服務,諸如障壁層、傳導特徵,或罩蓋層。已知用於產生無機含金屬薄膜之若干方法。其中之一為將成膜化合物自氣態沈積在基板上。為使金屬原子在適中溫度下變為氣態,有必要例如藉由使金屬與適合之配位體錯合以提供揮發性前驅體。該等前驅體需要對於蒸發足夠穩定,但另一方面其需要有足夠之反應性以便與沈積表面反應。
若需要金屬薄膜作為無機含金屬薄膜,則通常有必要使沈積金屬錯合物暴露於還原劑。通常,氫氣係用於將沈積金屬錯合物轉化成金屬薄膜。雖然對於如銅或銀之相對貴金屬而言,氫氣相當好地起到了還原劑之作用,但其對於諸如鈦或鋁之更具正電性之金屬而言產生之結果不盡如人意。
US 8 927 059揭示使用氫化鋁前驅體之沈積純金屬及鋁合金金屬薄膜。然而,此等前驅體證明穩定性不足而無法獲得最佳結果。
因此,本發明之目的在於提供一種用於製備薄膜中具有較少雜質之無機含金屬薄膜的方法。方法材料應容易處理;詳言之,應可伴隨儘可能少之分解將其汽化。此外,方法材料不應在方法條件下在沈積表面處分解,但同時應具有足夠反應性以參與表面反應。所有反應副產物應為揮發性的,以避免薄膜污染。另外,應可調整方法,使得方法材料中之金屬原子為揮發性的或併入薄膜中。此外,方法應為通用的,因此其可適用於產生大範圍之不同金屬,包括正電性金屬薄膜。
此等目的係藉由一種用於製備無機含金屬薄膜之方法達成,該方法包含使固體基板與呈氣態之通式(I)或(II)化合物接觸
其中A為NR2 或OR,其中R為烷基、烯基、芳基或矽烷基,
E為NR或O,
n為1、2或3,且
R'為氫、烷基、烯基、芳基或矽烷基,
其中若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子。
其中A為NR2 或OR,其中R為烷基、烯基、芳基或矽烷基,
E為NR或O,
n為1、2或3,且
R'為氫、烷基、烯基、芳基或矽烷基,
其中若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子。
本發明進一步係關於一種通式(I)或(II)化合物
其中A為NR2 或OR,其中R為烷基、烯基、芳基或矽烷基,
E為NR或O,
n為0、1或2,m為0、1或2,且
R'為氫、烷基、烯基、芳基或矽烷基,
其中若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子。
其中A為NR2 或OR,其中R為烷基、烯基、芳基或矽烷基,
E為NR或O,
n為0、1或2,m為0、1或2,且
R'為氫、烷基、烯基、芳基或矽烷基,
其中若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子。
本發明之較佳具體實例可在本說明書及申請專利範圍中發現。不同具體實例之組合屬於本發明範圍。
根據本發明之方法適合於製備無機含金屬薄膜。在本發明之上下文中,無機含金屬係指含有至少5 wt%,較佳至少10 wt%,更佳至少20 wt%,詳言之至少30 wt%之至少一種金屬的材料。無機薄膜通常含有僅呈碳化物相形式之碳,該碳化物相包括混合碳化物相,諸如氮化物之碳化物相。無機薄膜中並非碳化物相之部分的碳之碳含量較佳地小於5 wt%,更佳小於1 wt%,詳言之小於0.2 wt%。無機含金屬薄膜之較佳實例為金屬氮化物薄膜、金屬碳化物薄膜、金屬碳氮化物薄膜、金屬合金薄膜、金屬間化合物薄膜或含其混合物之薄膜。
藉由根據本發明之方法製備的薄膜含有金屬。該薄膜可能含有一種金屬或超過一種金屬。金屬包括Li、Be、Na、Mg、Al、K、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、Rb、Sr、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、Cs、Ba、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg、Tl、Pb、Bi。由於根據本發明之方法對於金屬而言為通用的,該金屬相比Cu可更具正電性,更佳地相比Ni更具正電性。詳言之,含金屬化合物含有Ti、Ta、Mn、Mo、W、Al、Co、Ga、Ge、Sb或Te。
固體基板可為任何固體材料。此等材料包括例如金屬、半金屬、氧化物、氮化物及聚合物。基板亦有可能為不同材料之混合物。金屬之實例為鋁、鋼、鋅及銅。半金屬之實例為矽、鍺及砷化鎵。氧化物之實例為二氧化矽、二氧化鈦及氧化鋅。氮化物之實例為氮化矽、氮化鋁、氮化鈦及氮化鎵。聚合物之實例為聚對苯二甲酸伸乙酯(PET)、聚乙烯萘-二甲酸(PEN)及聚醯胺。
固體基板可具有任何形狀。此等形狀包括薄片板、薄膜、纖維、各種尺寸之粒子,及具有溝槽或其他壓痕之基板。固體基板可具有任何尺寸。若固體基板具有粒子形狀,則粒子之尺寸可在低於100 nm至若干公分,較佳1 μm至1 mm之範圍內。為避免粒子或纖維在含金屬化合物沈積至其上時彼此黏著,較佳使其保持運動。此可例如藉由攪拌、藉由旋轉鼓輪或藉由流體化床技術來實現。
根據本發明,使固體基板與呈氣相之通式(I)或(II)化合物接觸。通式(I)或(II)化合物中之R'為氫、烷基、烯基、芳基或矽烷基,較佳為氫。R'可彼此相同或不同。較佳地,所有R'均為氫。
烷基可為直鏈或分支鏈。直鏈烷基之實例為甲基、乙基、正丙基、正丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基。分支鏈烷基之實例為異丙基、異丁基、第二丁基、第三丁基、2-甲基-戊基、新戊基、2-乙基-己基、環丙基、環己基、二氫茚基、降冰片烷基。較佳地,烷基為C1
至C8
烷基,更佳C1
至C6
烷基,詳言之C1
至C4
烷基,諸如甲基、乙基、異丙基或第三丁基。
烯基含有至少一個碳-碳雙鍵。該雙鍵可包括R'藉以鍵結至分子之其餘部分的碳原子,或其可置於距R'鍵結至分子之其餘部分之位置更遠處。烯基可為直鏈或分支鏈的。其中雙鍵包括R'藉以鍵結至分子之其餘部分之碳原子的直鏈烯基之實例包括1-乙烯基、1-丙烯基、1-正丁烯基、1-正戊烯基、1-正己烯基、1-正庚烯基、1-正辛烯基。其中雙鍵置於距R'鍵結至分子之其餘部分之位置更遠處的直鏈烯基之實例包括1-正丙烯-3-基、2-丁烯-1-基、1-丁烯-3-基、1-丁烯-4-基、1-己烯-6-基。其中雙鍵包括R'藉以鍵結至分子之其餘部分之碳原子的分支鏈烯基之實例包括1-丙烯-2-基、1-正丁烯-2-基、2-丁烯-2-基、環戊烯-1-基、環己烯-1-基。其中雙鍵置於距R'鍵結至分子之其餘部分之位置更遠處的分支鏈烯基之實例包括2-甲基-1-丁烯-4-基、環戊烯-3-基、環己烯-3-基。具有超過一個雙鍵之烯基的實例包括1,3-丁二烯-1-基、1,3-丁二烯-2-基、環戊二烯-5-基。
芳基包括芳族烴,諸如苯基、萘基、蒽基、菲基;及雜芳族基團,諸如吡咯基、呋喃基、噻吩基、吡啶基、喹啉基、苯并呋喃基、苯并噻吩基、噻吩并噻吩基。若干此等基團或此等基團之組合亦為可能的,如聯二苯、噻吩并苯基或呋喃基噻吩基。芳基可例如經由鹵素(如氟化物、氯化物、溴化物、碘化物);假鹵素(如氰化物、氰酸酯、硫氰酸酯);醇;烷基鏈或烷氧基鏈取代。芳族烴較佳,苯基更佳。
矽烷基為通常具有三個取代基之矽原子。較佳地,矽烷基具有式SiX3
,其中X彼此獨立地為氫、烷基、芳基或矽烷基。有可能全部三個X相同或兩個A相同且剩餘之X不同,或全部三個X彼此不同,較佳地全部X相同。烷基及芳基如上文所述。矽烷基之實例包括SiH3
、甲基矽烷基、三甲基矽烷基、三乙基矽烷基、三正丙基矽烷基、三異丙基矽烷基、三環己基矽烷基、二甲基-第三丁基矽烷基、二甲基環己基矽烷基、甲基-二異丙基矽烷基、三苯基矽烷基、苯基矽烷基、二甲基苯基矽烷基、五甲基二矽烷基。
通式(I)或(II)化合物中之A為NR2
或OR,亦即帶有兩個取代基R之氮原子或帶有一個取代基R之氧原子。R為烷基、烯基、芳基或矽烷基。除非明確地以不同方式描述,否則相同定義及較佳具體實例適用於上文所描述之R'。較佳地,R為甲基、乙基、第三丁基或三甲基矽烷基。亦較佳地,若A為NR2
,則兩個R一起形成包括氮原子之五員環,詳言之兩個R為包括氮原子之五員環中的-CH2
-CH2
-CH2
-CH2
-基團。
通式(I)或(II)化合物中之E為NR或O,亦即帶有一個取代基R之氮原子或氧原子。E中之R之定義與A中之R相同。
變數n可為0、1或2,變數m可為0、1或2,較佳地,n+m為1、2、3或4,更佳地,n為1或2且m為1或2,甚至更佳地,n為1且m為1,或n為2且m為2。
有可能全部R'及R為單獨之取代基。或者,有可能兩個R'或兩個R或者一個R'及一個R一起形成環,較佳地四員環至八員環,詳言之五員環或六員環。
若n為1,則通式(I)化合物變為以下通式中之一者。
通式(Ia)至(Id)化合物之一些較佳實例展示如下。
若n為2,則通式(I)化合物變為以下通式中之一者。
通式(Ie)至(Ih)化合物之一些較佳實例展示如下。
若n為3,則通式(I)化合物變為以下通式中之一者。
通式(Ii)至(Im)化合物之一些較佳實例展示如下。
若n為1,則通式(II)化合物變為以下通式中之一者。
通式(IIa)至(IIc)化合物之一些較佳實例展示如下。
若n為2,則通式(II)化合物變為以下通式中之一者。
通式(IId)至(IIf)化合物之一些較佳實例展示如下。
若n為3,則通式(II)化合物變為以下通式中之一者。
通式(IIg)至(IIi)化合物之一些較佳實例展示如下。
通式(I)或(II)化合物常常以液相及固相,且有時亦至少部分地以氣相形式形成二聚體。此等二聚體在本發明之範圍內。
根據本發明,若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子;較佳地與n無關,若E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子;更佳地NR或OR中之全部R在1位不帶有氫原子,亦即R不帶有鍵結至原子之氫原子,該原子鍵結至氮或氧原子,該氮或氧原子因此相對於鋁原子處於β位。實例為在1位帶有兩個烷基側基之烷基,亦即1,1-二烷基烷基,諸如第三丁基、1,1-二甲基丙基;在1位具有兩個鹵素之烷基,諸如三氟甲基、三氯甲基、1,1-二氟乙基;三烷基矽烷基,諸如三甲基矽烷基、三乙基矽烷基、二甲基第三丁基矽烷基;芳基,詳言之苯基或經烷基取代之苯基,諸如2,6-二異丙基苯基、2,4,6-三異丙基苯基。在1位無氫原子之烷基尤佳。
通式(I)或(II)化合物較佳地具有不大於1000 g/mol、更佳不大於800 g/mol、甚至更佳不大於600 g/mol、詳言之不大於500 g/mol之分子量。
較佳地,通式(I)或(II)化合物之熔點範圍為-80至125℃,較佳-60至80℃,甚至更佳-40至50℃,詳言之-20至20℃。通式(I)或(II)化合物熔融,得到直至達到分解溫度之前保持不變的透明液體為有利的。
較佳地,通式(I)或(II)化合物具有至少80℃、更佳至少100℃、詳言之至少120℃、諸如至少150℃之分解溫度。通常,分解溫度不大於250℃。通式(I)或(II)化合物具有高蒸汽壓力。較佳地,蒸汽壓力在200℃之溫度下、更佳地在150℃下、詳言之在120℃下為至少1毫巴。通常,蒸汽壓力為1毫巴時之溫度為至少50℃。
通式(I)或(II)化合物可藉由使有機配位體與AlH3
、LiAlH4
或AlH3
(N(CH3
)3
)反應而合成,較佳地呈液態烴或醚。烴包括芳族烴,諸如甲苯、乙苯、二甲苯及異丙苯;及脂族烴,諸如環己烷、己烷、甲基環己烷及庚烷。醚之實例包括二乙醚,二甲醚,四氫呋喃,及單乙二醇、二乙二醇、三乙二醇及四乙二醇二甲醚,較佳地為二乙醚。
包括其合成之配位體例如針對以下化合物而揭示:US 2002/013487 A1中之通式(Ib)化合物;通式(Ic)化合物,在Underhill等人之美國化學學會期刊中,第71(1949)卷,第4014至4019頁;通式(Id)化合物,在Heaton等人之化學學會期刊中,道爾頓彙刊(Dalton Transactions):無機化學(1972至1999),1996,第61至68頁;通式(Ie)及(Ii)化合物,在Popr等人之有機化學期刊中,第10(2014)卷,第1390-1396頁;通式(If)化合物,在Afonso等人之Molecules中,第11(2006)卷,第91至102頁;通式(Ig)化合物,在Rosenau等人之Synthetic Communications中,第32(2002)卷,第457至466頁;通式(Ih)化合物,在Spasyuk等人之有機金屬期刊(Organometallics),第31(2012)卷,第5239至5242頁;WO 2016/177655 A1中之通式(Ii)化合物;US 2010/063294 A1中之通式(Ik)化合物;US 2010/069681中之通式(Im)化合物;WO 2010/019844 A1中之通式(IIa)化合物;通式(IIb)化合物,在Cheng等人之化學研究期刊中,1983,第1101至1113頁;通式(IId)化合物,在Cortes等人之有機化學期刊中,第48(1983)卷,第2246至2254頁;通式(IIe)化合物,在Ram等人之Synthetic Communications中,第17(1987)卷,第415至418頁;通式(IIg)化合物,在Dale等人之Acta Chemica Scandinavica中,第45(1991)卷,第1064至1070頁;WO 2006/051851 A1中之通式(IIh)化合物;CN 105585445 A中之通式(IIi)化合物。
根據本發明之方法中所用的通式(I)或(II)化合物以高純度用以獲得最佳結果。高純度意謂使用之物質含有至少90 wt%、較佳至少95 wt%、更佳至少98 wt%、詳言之至少99 wt%之含金屬化合物或通式(I)或(II)化合物。純度可藉由根據DIN 51721(Prufung fester Brennstoffe-Bestimmung des Gehaltes an Kohlenstoff und Wasserstoff-Verfahren nach Radmacher-Hoverath,2001年8月)之基本分析來測定。
使通式(I)或(II)化合物自氣態與固體基板接觸。可例如藉由將其加熱至高溫以使其變為氣態。在任何情況下,必須選擇低於通式(I)或(II)化合物之分解溫度的溫度。分解溫度為原始通式(I)或(II)化合物開始改變其化學結構及組成時之溫度。較佳地,加熱溫度範圍介於0℃至300℃,更佳10℃至250℃,甚至更佳20℃至200℃,詳言之30℃至150℃。
使通式(I)或(II)化合物變為氣態之另一方式為直接液體注入(direct liquid injection;DLI),如例如在US 2009/0 226 612 A1中所描述。在此方法中,通式(I)或(II)化合物通常溶解於溶劑中且噴灑在載氣或真空中。若通式(I)或(II)化合物之蒸汽壓力及溫度足夠高且壓力足夠低,則通式(I)或(II)化合物變為氣態。可使用各種溶劑,其限制條件為在該溶劑中通式(I)或(II)化合物展示足夠溶解度,諸如至少1 g/l,較佳至少10 g/l,更佳至少100 g/l。此等溶劑之實例為配位溶劑,諸如四氫呋喃、二噁烷、二乙氧基乙烷、吡啶;或非配位溶劑,諸如己烷、庚烷、苯、甲苯或二甲苯。溶劑混合物亦為適合的。
或者,通式(I)或(II)化合物可藉由直接液體蒸發(direct liquid evaporation;DLE)變為氣態,如例如J. Yang等人(Journal of Materials Chemistry, 2015)所描述。在此方法中,將通式(I)或(II)化合物與溶劑(例如烴,諸如十四烷)混合,且在溶劑之沸點以下加熱。藉由蒸發溶劑,通式(I)或(II)化合物變為氣態。此方法具有無粒子污染物形成於表面上的優勢。
較佳在減小壓力下使通式(I)或(II)化合物變為氣態。以此方式,方法可通常在較低加熱溫度下執行,導致通式(I)或(II)化合物之分解減少。亦有可能使用增大之壓力將呈氣態之通式(I)或(II)化合物推向固體基板。通常,出於此目的,惰性氣體(諸如氮氣或氬氣)用作載氣。較佳地,壓力為10巴至10-7
毫巴,更佳1巴至10-3
毫巴,詳言之1至0.01毫巴,諸如0.1毫巴。
較佳地,通式(I)或(II)化合物在方法中充當還原劑。在此情況下,使含金屬化合物自氣態沈積至固體基板上,隨後使其與通式(I)或(II)化合物接觸。該含金屬化合物通常經還原成金屬、金屬氮化物、金屬碳化物、金屬碳氮化物、金屬合金、金屬間化合物或其混合物。在本發明之上下文中之金屬薄膜為具有高電導率(通常至少104
S/m,較佳至少105
S/m,詳言之至少106
S/m)之含金屬薄膜。
通式(I)或(II)化合物與具有經沈積之含金屬化合物的固體基板之表面形成永久結合的傾向性低。因此,含金屬薄膜幾乎不會被通式(I)或(II)化合物之反應副產物污染。較佳地,含金屬薄膜含有總共小於5重量%、更佳小於1 wt%、詳言之小於0.5 wt%、諸如小於0.2 wt%之氮。
含金屬化合物含有至少一個金屬原子。金屬包括Li、Be、Na、Mg、Al、K、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Rb、Sr、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、Cs、Ba、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg、Tl、Pb、Bi。由於根據本發明之方法對於含金屬化合物而言完全通用,因此該含金屬化合物可含有相比Cu更具正電性、更佳地相比Ni更具正電性之金屬。詳言之,含金屬化合物含有Ti、Ta、Mn、Mo、W、Al、Co、Ge、Ga、Sb或Te。超過一種含金屬化合物可同時或連續地沈積於該表面上。若超過一種含金屬化合物沈積於固體基板上,則所有含金屬化合物可含有相同金屬或不同金屬,較佳地,其含有不同金屬。
可變為氣態之任何含金屬化合物均適合。此等化合物包括:烷基金屬,諸如二甲基鋅、三甲基鋁;烷氧基化金屬,諸如四甲氧基矽、四異丙氧基鋯或四異丙氧基鈦;環戊二烯基金屬錯合物,如五甲基環戊二烯基-三甲氧基鈦或二(乙基環戊二烯基)錳;金屬碳烯,諸如參(新戊基)新亞戊基鉭或雙咪唑烷亞基氯化釕;金屬鹵化物,諸如三氯化鋁、五氯化鉭、四氯化鈦、五氯化鉬或六氯化鎢;一氧化碳錯合物,如六羰基鉻或四羰基鎳;胺衍生錯合物,諸如雙(第三丁胺基)雙(二甲基胺基)鉬、雙(第三丁胺基)雙(二甲基胺基)鎢或肆(二甲基胺基)鈦;二酮錯合物,諸如參(乙醯丙酮根)鋁或雙(2,2,6,6-四甲基-3,5-庚二酮基)錳。
含金屬化合物之其他實例為參(2,2,6,6-四甲基-3,5-庚二酮酸)鋁、三異丁基鋁、三甲基鋁、參(二甲基胺基)鋁(III)、三乙基鎵、三甲基鎵、參(二甲基胺基)鎵(III)、肆(二乙基胺基)鈦(IV)、肆(二甲基胺基)鈦(IV)、肆(乙基甲基胺基)鈦(IV)、二異丙醇雙(2,2,6,6-四甲基-3,5-庚二酮酸)鈦(IV)、異丙醇鈦(IV)、四氯化鈦、雙(環戊二烯基)釩(II)、雙(乙基環戊二烯基)釩(II)、氧基三異丙醇釩(V)、雙(環戊二烯基)鉻(II)、雙(五甲基環戊二烯基)鉻(II)、參(2,2,6,6-四甲基-3,5-庚二酮酸)鉻(III)、雙(6,6,7,7,8,8,8-七氟-2,2-二甲基-3,5-辛二酮酸)銅、雙(2,2,6,6-四甲基-3,5-庚二酮酸)銅、雙(五甲基環戊二烯基)錳(II)、溴代五羰基錳(I)、三羰基環戊二烯基錳(I)、三羰基乙基環戊二烯基錳(I)、羰基錳(0)、[1,1'-雙(二苯基膦基)二茂鐵]四羰基鉬(0)、雙(五甲基環戊二烯基)鐵(II)、1,1'-二乙基二茂鐵、參(2,2,6,6-四甲基-3,5-庚二酮酸)鐵(III)、五羰基鐵(0)、雙(環戊二烯基)鈷(II)、雙(乙基環戊二烯基)鈷(II)、雙(五甲基環戊二烯基)鈷(II)、烯丙基(環戊二烯基)鎳(II)、雙(環戊二烯基)鎳(II)、雙(乙基環戊二烯基)鎳(II)、雙(三苯膦)二氯化鎳(II)、雙(2,2,6,6-四甲基-3,5-庚二酮酸)鎳(II)、參[N, N-雙(三甲基矽烷基)醯胺]釔、參(丁基環戊二烯基)釔(III)、參(環戊二烯基)釔(III)、參(異丙醇)釔(III)、參(2,2,6,6-四甲基-3,5-庚二酮酸)釔(III)、雙(環戊二烯基)二氯化鈮(IV)、雙(環戊二烯基)二氫化鋯(IV)、二甲基雙(五甲基環戊二烯基)鋯(IV)、肆(二乙基胺基)鋯(IV)、肆(二甲基胺基)鋯(IV)、肆(乙基甲基胺基)鋯(IV)、2-乙基己酸鋯(IV)、肆(2,2,6,6-四甲基-3,5-庚二酮酸)鋯、雙(第三丁基環戊二烯基)二甲基鉿(IV)、雙(三甲基矽烷基)胺基氯化鉿(IV)、二甲基雙(環戊二烯基)鉿(IV)、第三丁氧基鉿(IV)、肆(二乙基胺基)鉿(IV)、肆(二甲基胺基)鉿(IV)、肆(乙基甲基胺基)鉿(IV)、五(二甲基胺基)鉭(V)、乙氧基鉭(V)、參(二乙基胺基)(第三丁基亞胺基)鉭(V)、雙(丁基環戊二烯基)二碘化鎢(IV)、雙(第三丁基亞胺基)雙(第三丁基胺基)鎢、雙(第三丁胺基)雙(二甲胺基)鎢(VI)、雙(環戊二烯基)二氯化鎢(IV)、雙(環戊二烯基)二氫化鎢(IV)、雙(異丙基環戊二烯基)二氫化鎢(IV)、三羰基環戊二烯基氫化鎢(II)、四羰基(1,5-環辛二烯)鎢(0)、及三羰基三胺基鎢(IV)、六羰基鎢、雙(五氟-苯基)鋅、雙(2,2,6,6-四甲基-3,5-庚二酮基)鋅(II)、二乙基鋅、二苯基鋅、三甲基(甲基環戊二烯基)鉑(IV)、三乙基(甲基環戊二烯基)鉑(IV)、雙(環戊二烯基)鎂(II)、雙(五甲基環戊二烯基)鎂、(3-胺丙基)三乙氧基矽烷、正第二丁基(三甲基矽烷基)胺、氯五甲基二矽烷、1,2-二氯四甲基二矽烷、1,3-二乙基-1,1,3,3-四甲基二矽氮烷、1,2-二甲基-1,1,2,2-四苯基二矽烷、十二甲基環己矽烷、六甲基二矽烷、六甲基二矽氮烷、甲基矽烷、2,4,6,8,10-五甲基環戊矽氧烷、五甲基二矽烷、四溴化矽、四氯化矽、四乙基矽烷、2,4,6,8-四甲基環四矽氧烷、1,1,2,2-四甲基二矽烷、參(第三丁氧基)矽烷醇、參(第三戊氧基)矽烷醇、氟化鍺(IV)、六甲基二鍺(IV)、六苯基二鍺(IV)、四甲基鍺、三丁基氫化鍺、三苯基氫化鍺、雙[雙(三甲基矽烷基)胺基]錫(II)、二丁基二苯基錫、六苯基二錫(IV)、四烯丙基錫、肆(二乙基胺基)錫(IV)、肆(二甲基胺基)錫(IV)、四甲基錫、四乙烯基錫、乙醯丙酮錫(II)、三甲基(苯基乙炔基)錫、及三甲基(苯基)錫、三(乙氧基)銻(III)、三(丁氧基)銻(III)、((CH3
)2
N)3
SbGe(OC2
H5
)4
、四甲基鍺(IV)、四乙基鍺(IV)、四正丁基鍺(IV)。
金屬鹵化物較佳,金屬氯化物更佳,詳言之TiCl4
、TaCl5
、MoCl5
、WCl5
、WCl6
、AlCl3
、GaCl3
、GeCl4
、TeCl4
。較佳地,含金屬化合物之分子量高達1000 g/mol,更佳高達800 g/mol,詳言之高達600 g/mol,諸如高達500 g/mol。
方法較佳地執行為原子層沈積(atomic layer deposition;ALD)方法,包含以下工序:
(a)將含金屬化合物自氣態沈積至固體基板上,及
(b)使具有經沈積含金屬化合物之固體基板與通式(I)或(II)化合物接觸。較佳地,執行包含(a)及(b)之工序至少兩次,更佳地至少五次,甚至更佳至少10次,詳言之至少50次。通常,執行包含(a)及(b)之工序不超過1000次。
(a)將含金屬化合物自氣態沈積至固體基板上,及
(b)使具有經沈積含金屬化合物之固體基板與通式(I)或(II)化合物接觸。較佳地,執行包含(a)及(b)之工序至少兩次,更佳地至少五次,甚至更佳至少10次,詳言之至少50次。通常,執行包含(a)及(b)之工序不超過1000次。
通常,較佳的為每當將固體基板暴露於呈氣態之含金屬化合物或通式(I)或(II)化合物時用惰性氣體吹掃基板及其周圍的設備。惰性氣體之較佳實例為氮氣及氬氣。吹掃可花費1 s至1 min,較佳地5至30 s,更佳地10至25 s,詳言之15至20 s。
較佳地,基板之溫度比含金屬化合物變為氣態時之溫度高5℃至40℃,例如20℃。較佳地,基板之溫度為室溫至450℃,更佳地100至400℃,詳言之120至300℃,諸如150至220℃。
較佳地,在將含金屬化合物沈積於固體基板上之後及在使具有經沈積含金屬化合物之固體基板與通式(I)或(II)化合物接觸之前,使具有經沈積含金屬化合物之固體基板與呈氣相之酸接觸。在不受理論束縛之情況下,認為含金屬化合物之配位體之質子化有助於其分解及還原。適合酸包括鹽酸及羧酸,較佳地羧酸,諸如甲酸、乙酸、丙酸、丁酸或三氟乙酸,詳言之甲酸。
本發明方法之實例為一種將含金屬薄膜沈積於基板上之方法,其包含:
(i)將金屬前驅體蒸汽供應至基板以獲得經塗佈之基板;
(ii)用第一載氣吹掃經塗佈之基板;
(iii)將氫化鋁共反應物供應至經塗佈之基板;以及隨後
(iv)用第二載氣吹掃,
其中氫化鋁共反應物為金屬錯合物,包含包含鍵結至鋁之1至3個氫原子之氫化鋁,且
其中(i)至(iv)視情況重複一或多次。金屬前驅體通常為含金屬化合物。氫化鋁共反應物為通式(I)或(II)化合物,較佳為通式(I)化合物,更佳為通式(Ia)化合物,甚至更佳為其中R'為氫之通式(Ia)化合物,詳言之為其中R'為氫且R為甲基之通式(Ia)化合物。
(i)將金屬前驅體蒸汽供應至基板以獲得經塗佈之基板;
(ii)用第一載氣吹掃經塗佈之基板;
(iii)將氫化鋁共反應物供應至經塗佈之基板;以及隨後
(iv)用第二載氣吹掃,
其中氫化鋁共反應物為金屬錯合物,包含包含鍵結至鋁之1至3個氫原子之氫化鋁,且
其中(i)至(iv)視情況重複一或多次。金屬前驅體通常為含金屬化合物。氫化鋁共反應物為通式(I)或(II)化合物,較佳為通式(I)化合物,更佳為通式(Ia)化合物,甚至更佳為其中R'為氫之通式(Ia)化合物,詳言之為其中R'為氫且R為甲基之通式(Ia)化合物。
或者,根據本發明之方法可用以自通式(I)或(II)化合物沈積鋁。在此情況下,例如因為固體基板之表面上存在諸如OH基團之反應性基團或固體基板之溫度足夠高,故該通式(I)或(II)化合物吸附至固體基板之表面。較佳地,經吸附的通式(I)或(II)化合物經分解。
分解可以各種方式實現。固體基板之溫度可提高至高於分解溫度。在此情況下,方法為化學氣相沈積(chemical vapor deposition;CVD)方法。通常,將固體基板加熱至300℃至1000℃範圍內,較佳350℃至600℃範圍內之溫度。
另外,可以將所沈積的通式(I)或(II)化合物暴露於電漿,如氧電漿、氫電漿、氨電漿、或氮電漿;氧化劑,如氧氣、氧自由基、臭氧、氧化亞氮(N2
O)、氧化氮(NO)、二氧化氮(NO2
)或過氧化氫;氨或氨衍生物,例如第三丁胺、異丙胺、二甲胺、甲基乙基胺或二乙胺;肼或肼衍生物,如N,N-二甲基肼;溶劑,如水、烷烴或四氯化碳;或硼化合物,如甲硼烷。選擇視所需層之化學結構而定。對於氧化鋁,較佳使用氧化劑、電漿或水,詳言之氧氣、水、氧電漿或臭氧。對於鋁,氮化物、氨、肼、肼衍生物、氮電漿或氨電漿較佳。對於硼化鋁,硼化合物較佳。對於碳化鋁,烷烴或四氯化碳較佳。對於碳化鋁氮化物(aluminum carbide nitride),包括烷烴、四氯化碳、氨及/或肼之混合物較佳。
方法較佳地執行為原子層沈積(atomic layer deposition;ALD)方法,包含以下工序:
(c)使固體基板與通式(I)或(II)化合物接觸,及
(d)分解經吸附的通式(I)或(II)化合物。較佳地,執行包含(c)及(d)之工序至少兩次,更佳地至少五次,甚至更佳至少10次,詳言之至少50次。通常,執行包含(c)及(d)之工序不超過1000次。
(c)使固體基板與通式(I)或(II)化合物接觸,及
(d)分解經吸附的通式(I)或(II)化合物。較佳地,執行包含(c)及(d)之工序至少兩次,更佳地至少五次,甚至更佳至少10次,詳言之至少50次。通常,執行包含(c)及(d)之工序不超過1000次。
在此情況下,基板之溫度較佳地為比含金屬化合物變為氣態時之溫度高5℃至40℃,例如20℃。較佳地,基板之溫度為室溫至450℃,更佳地100至400℃,詳言之120至300℃,諸如150至220℃。
若在根據本發明之方法中基板之溫度保持低於含金屬化合物之分解溫度,則通常,單層沈積於固體基板上。一旦含金屬化合物之分子沈積於固體基板上,在其頂部上之進一步沈積通常變得不大可能。因此,含金屬化合物於固體基板上之沈積較佳地表示自我限制性方法步驟。自我限制性沈積方法步驟之典型層厚度為0.01 nm至1 nm,較佳為0.02 nm至0.5 nm,更佳為0.03 nm至0.4 nm,詳言之為0.05 nm至0.2 nm。層厚度通常藉由如PAS 1022 DE(Referenzverfahren zur Bestimmung von optischen und dielektrischen Materialeigenschaften sowie der Schichtdicke dunner Schichten mittels Ellipsometrie;2004年2月)中所描述之橢圓偏振法量測。
具有通式(I)或(II)化合物或含金屬化合物的基板之暴露可花費數毫秒至若干分鐘,較佳地為0.1秒至1分鐘,詳言之為1至10秒。固體基板在低於通式(I)或(II)化合物或含金屬化合物之分解溫度的溫度下暴露於通式(I)或(II)化合物或含金屬化合物之時間愈長,較常規薄膜形成有愈少缺陷。
根據本發明之方法之特定優勢為:通式(I)或(II)化合物極其通用,因此方法參數可以在廣泛範圍內變化。因此,根據本發明之方法包括CVD方法以及ALD方法兩者。
根據本發明之方法產生無機含金屬薄膜。薄膜可為金屬之僅一個單層或更厚,諸如0.1 nm至1 μm,較佳地0.5至50 nm。薄膜可含有缺陷,如孔。然而,此等缺陷通常構成由薄膜覆蓋的表面積之低於一半。薄膜較佳具有極其均一之薄膜厚度,其意謂在基板上之不同位置處之薄膜厚度變化極小,通常低於10%,較佳低於5%。此外,薄膜較佳為基板表面上之保形膜。測定薄膜厚度及均一性之適合方法為SEM/TEM或橢圓偏振法。
藉由根據本發明之方法獲得之薄膜可用於電子元件中。電子元件可具有各種尺寸,例如1 nm至100 μm,例如10 nm、14 nm或22 nm之結構特徵。形成用於電子元件之薄膜的方法尤其較適用於極精密結構。因此,具有低於1 μm之尺寸的電子元件較佳。電子元件之實例為場效電晶體(field-effect transistors;FET)、太陽能電池、發光二極體、感測器或電容器。在諸如發光二極體或感光器之光學裝置中,藉由根據本發明之方法所獲得之薄膜用以提高反射光之層的折射率。
較佳之電子元件為電晶體。較佳地,薄膜充當電晶體中之化學位障金屬。化學位障金屬為降低鄰近層之擴散,同時維持電連接性的材料。
或者,在本文中所描述之方法中,可使用通式(III)或(IV)化合物替代通式(I)或(II)化合物。應用R及R'及如上文所描述之方法之其餘部分的相同定義及較佳具體實例。
通式(III)化合物之實例如下。
實施例
實施例1a:化合物(Ie-1)之配位體之合成
實施例1a:化合物(Ie-1)之配位體之合成
向250 mL圓底燒瓶中裝入2-氯-N,N-二甲基乙基胺鹽酸鹽(25.0 g,0.175 mol)、第三丁胺(115 mL,1.1 mol,6.3當量)、水(5 mL),且在70℃下加熱至溫和回流達18小時。在冷卻至環境溫度後,添加己烷及水(各自40 mL)且將其轉移至分液漏斗。將水性溶離份用己烷(3x20 mL)洗滌且將經合併之己烷溶離份用鹽水洗滌,經MgSO4
脫水,且在減壓下蒸發以得到透明無色油(10.898 g,43%)。常規地使用分析純產物而無進一步純化,但其可藉由在65℃,18 Torr下進行之真空蒸餾來純化。
1
H NMR(400 MHz,C6
D6
)δ = 2.56(t,2H)、2.34(t,2H)、2.06(s,6H)、1.29(bs,1H)、1.06(s,9H)
13 C NMR(100 MHz,C6 D6 )δ = 60.52、50.00、45.74、40.53、29.61
實施例1b:化合物(Ie-1)之合成
13 C NMR(100 MHz,C6 D6 )δ = 60.52、50.00、45.74、40.53、29.61
實施例1b:化合物(Ie-1)之合成
向250 mL舒倫克(Schlenk)燒瓶中裝入LiAlH4
(0.854 g,22.5 mmol)、二乙醚(70 mL),且在冰浴上冷卻至0℃。向單獨的100 mL舒倫克燒瓶中裝入AlCl3
(1.000 g,7.5 mmol)及二乙醚(50 mL)。將AlCl3
溶液經套管加入至LiAlH4
溶液中且在環境溫度下攪拌所得混濁溶液30 min。將混合物冷卻至-30℃且添加1-第三丁胺基-2-二甲基胺基乙烷(3.934 g,27.3 mmol)在二乙醚(25 mL)中之溶液。在環境溫度下攪拌所得混合物4小時且接著將其經由矽藻土過濾且在減壓下蒸發。當大部分二乙醚已經蒸發時,在冰浴上冷卻燒瓶以固化較不熔融產物(3.345 g,71%)。
熔點:31至32℃
1 H NMR(600 MHz,C6 D6 )δ = 4.52(bs,2H)、2.73(t,2H)、2.15(t,2H)、1.83(s,6H)、1.35(s,9H)
13 C NMR(150 MHz,C6 D6 )δ = 61.62、51.25、44.83、41.73、30.52
IR (ATR) v/cm-1 = 3001、2961、2895、2853、2812、1852、1782、1728、1485、1462、1429、1406、1383、1352、1342、1290、1238、1223、1205、1184、1157、1118、1101、1065、1057、1014、1003、947、916、895、800、775、679、619、596、580、546、511、465
針對C8 H21 AlN2 172.25計算之Cryoscopic分子量發現為179.06,相關程度= 1.04
實施例2a:化合物(Ie-5)之配位體之合成
1 H NMR(600 MHz,C6 D6 )δ = 4.52(bs,2H)、2.73(t,2H)、2.15(t,2H)、1.83(s,6H)、1.35(s,9H)
13 C NMR(150 MHz,C6 D6 )δ = 61.62、51.25、44.83、41.73、30.52
IR (ATR) v/cm-1 = 3001、2961、2895、2853、2812、1852、1782、1728、1485、1462、1429、1406、1383、1352、1342、1290、1238、1223、1205、1184、1157、1118、1101、1065、1057、1014、1003、947、916、895、800、775、679、619、596、580、546、511、465
針對C8 H21 AlN2 172.25計算之Cryoscopic分子量發現為179.06,相關程度= 1.04
實施例2a:化合物(Ie-5)之配位體之合成
向250 mL圓底燒瓶中裝入1-(2-氯乙基)吡咯啶鹽酸鹽(24.85 g,0.146 mol)、第三丁胺(115 mL,1.1 mol,6.3當量)、水(5 mL),且在70℃下加熱至溫和回流達18小時。在冷卻至環境溫度後,添加己烷及水(各自40 mL)且將其轉移至分液漏斗。將水性溶離份用己烷(3x20 mL)洗滌且將經合併之己烷溶離份用鹽水洗滌,經MgSO4
脫水,且在減壓下蒸發,以得到略微紅色油,其藉由在100℃及18 Torr下進行之真空蒸餾來純化(14.466 g,58.1%)。
1
H NMR(400 MHz,C6
D6
)δ = 2.67至2.56(m,4H)、2.39(t,4H)、1.59(p,4H)、1.07(s,9H)
13 C NMR(100 MHz,C6D6)δ = 57.40、54.55、50.08、41.88、29.64、24.28
實施例2b:化合物(Ie-5)之合成.
13 C NMR(100 MHz,C6D6)δ = 57.40、54.55、50.08、41.88、29.64、24.28
實施例2b:化合物(Ie-5)之合成.
向250 mL舒倫克燒瓶中裝入LiAlH4
(0.925 g,24.37 mmol)、二乙醚(70 mL),且在冰浴上冷卻至0℃。向單獨的100 mL舒倫克燒瓶中裝入AlCl3
(1.083 g,8.12 mmol)及二乙醚(50 mL)。將AlCl3
溶液經套管加入至LiAlH4
溶液中且在環境溫度下攪拌所得混濁溶液30 min。將混合物冷卻至-30℃且添加化合物(Ie-5)之配位體(5.531 g,32.48 mmol)在二乙醚(25 mL)中之溶液。在環境溫度下攪拌所得混合物4小時且接著將其經由矽藻土過濾且在減壓下蒸發。當大部分二乙醚已經蒸發時,在冰浴上冷卻燒瓶以固化較不熔融產物(3.600 g,56%)。
熔點:28至29℃
1 H NMR(600 MHz,C6 D6 )δ = 4.47(bs,2H)、3.08(m,2H)、2.82(t,2H)、2.43(t,2H)、1.66(m,4H)、1.37(s,9H)、1.22(m,2H)
13 C NMR(150 MHz,C6 D6 )δ = 59.45、54.84、51.52、42.99、30.48、23.23
實施例3:化合物(Ie-1)之氯化類似物之合成
1 H NMR(600 MHz,C6 D6 )δ = 4.47(bs,2H)、3.08(m,2H)、2.82(t,2H)、2.43(t,2H)、1.66(m,4H)、1.37(s,9H)、1.22(m,2H)
13 C NMR(150 MHz,C6 D6 )δ = 59.45、54.84、51.52、42.99、30.48、23.23
實施例3:化合物(Ie-1)之氯化類似物之合成
向100 mL舒倫克燒瓶中裝入1-第三丁胺基-2-二甲基胺基乙烷(500 mg,3.47 mmol)、甲苯(25 mL),且在冰浴上冷卻至0℃。逐滴添加正丁基鋰溶液(1.39 mL,3.47 mmol)且允許在冰浴上攪拌該混合物30 min,接著移除冰浴且將該混合物升溫至環境溫度達2小時。向單獨的100 mL舒倫克燒瓶中裝入AlCl3
(463 mg,3.47 mmol)、甲苯(15 mL),且在冰浴上冷卻至0℃。接著將配位體溶液經套管加入至AlCl3
溶液中且將所得混合物緩慢地升溫至環境溫度達3小時,之後經由矽藻土過濾且在減壓下蒸發以得到橙色固體。粗產物(100℃,50毫托)之昇華產生無色晶體(388 mg,48%)。
熔點:87至89℃
1 H NMR(400 MHz,C6 D6 )δ = 2.49(t,2H)、1.97(t,2H)、1.76(s,6H)、1.27(s,9H)
13 C NMR(100 MHz,C6 D6 )δ = 60.20、50.74、44.92、39.71、30.41
實施例4:化合物(III-1)之合成
1 H NMR(400 MHz,C6 D6 )δ = 2.49(t,2H)、1.97(t,2H)、1.76(s,6H)、1.27(s,9H)
13 C NMR(100 MHz,C6 D6 )δ = 60.20、50.74、44.92、39.71、30.41
實施例4:化合物(III-1)之合成
向200 mL舒倫克燒瓶中裝入AlCl3
(481 mg,3.605 mmol)及二乙醚(40 mL)且在冰浴上冷卻。向100 mL舒倫克燒瓶中裝入LiAlH4
(410 mg,10.815 mmol)及二乙醚(40 mL)且藉由套管將所得LiAlH4
溶液轉移至AlCl3
溶液。在環境溫度下攪拌AlH3
(14.421 mmol,1.1當量)之所得二乙醚溶液30 min。向單獨的100 mL舒倫克燒瓶中裝入1,3-二乙基-4,5-二甲基咪唑-2-亞基(1.996 g,13.11 mmol)及二乙醚(20 mL)。
接著藉由套管將此溶液轉移至已在冰浴上重新經冷卻之AlH3
溶液。在環境溫度下攪拌所得混合物18小時,接著經由矽藻土過濾混合物,用二乙醚(2x15 mL)洗滌固體,且將經合併之二乙醚溶離份在減壓下蒸發,以產生白色粉末。藉由在110℃,50毫托下進行之昇華來純化(1.960 g,82%)。
熔點:115至116℃
1 H NMR(600 MHz,C6 D6 )δ = 3.82(q,4H)、1.26(s,6H)、1.01(t,6H)
13 C NMR(150 MHz,C6 D6 )δ = 124.97、42.40、16.61、7.99
IR (ATR) v/cm-1 = 2967、2924、2872、2818、1767、1720、1639、1470、1447、1420、1396、1379、1356、1344、1315、1298、1242、1205、1159、1118、1094、970、903、822、741、696、586、523、498
實施例5:自TiCl4 及化合物(Ie-1)之鈦碳氮化物薄膜生長
1 H NMR(600 MHz,C6 D6 )δ = 3.82(q,4H)、1.26(s,6H)、1.01(t,6H)
13 C NMR(150 MHz,C6 D6 )δ = 124.97、42.40、16.61、7.99
IR (ATR) v/cm-1 = 2967、2924、2872、2818、1767、1720、1639、1470、1447、1420、1396、1379、1356、1344、1315、1298、1242、1205、1159、1118、1094、970、903、822、741、696、586、523、498
實施例5:自TiCl4 及化合物(Ie-1)之鈦碳氮化物薄膜生長
在配備有負載鎖定且超高純度N2
(<100 ppt H2
O、O2
)作為載氣之Picosun R-75 ALD反應器中使用SiO2
基板(Si上之100 nm熱氧化物)上之化合物(Ie-1)及TiCl4
評估薄膜之ALD生長。使用閥控且藉由吹掃週期分離之惰性氣體將前驅體及共反應物蒸汽依序脈衝至沈積腔室中。
在高於180℃溫度下之沈積產生導電且在空氣中穩定之淺金色有色薄膜。
在300℃下藉由依據前驅體及共反應物脈衝長度研究生長率而展現前驅體及共反應物兩者之自我限制性生長。圖3之頂部展現針對TiCl4
之≥ 0.2 s及化合物(Ie-1)之≥ 2.0 s之脈衝長度在250次ALD循環之後生長率恆定在1.7埃/循環下。化合物(Ie-1)之自我限制性行為之觀測結果為出人意料且令人驚訝的,由於300℃之薄膜生長溫度遠高於其185℃之固態熱分解溫度。高於共反應物分解溫度,通常觀測到自我限制性生長之缺失及不斷提高之生長率。在此情況下,在不存在甚至高達400℃之前驅體或共反應物的情況下未觀測到薄膜生長。
使用0.2 s TiCl4
、5 s化合物(Ie-1),及10 s N2
吹掃氣體之飽和性脈衝方案,在250次循環之後的生長率評估為基板溫度之函數,如藉由圖3左下方所展現。在220至400℃之間,生長率大致與基板溫度無關,在1.6至2.0埃/循環下。薄膜電阻率跨越溫度範圍280至400℃在600至650 μΩ-cm之間。在1.78埃/循環之根據線性回歸之生長率的情況下觀測到線性薄膜生長在75至375次循環之間(圖6D)。-16.577之y截距可指示在達至穩態生長之前約9個循環之稍微成核延遲。
X射線光電子光譜分析(X-ray photoelectron spectroscopy,XPS)用於測定薄膜組成及揭露Ti、C及N以及少量O、Cl及Al之存在,如下表2中所展現。
表2:使用TiCl4 及化合物(Ie-1)之XPS薄膜組成
表2:使用TiCl4 及化合物(Ie-1)之XPS薄膜組成
如圖4中所展現,藉由對在280及400℃下沈積之40-50 nm薄膜之掠入射XRD(GI-XRD)分析,薄膜之結構被視為奈米晶體TiN/TiC。觀測到對應於TiN/TiC之111及200晶格面之低強度反射。
實施例6:自WCl6 及化合物(Ie-1)之碳化鎢薄膜生長
實施例6:自WCl6 及化合物(Ie-1)之碳化鎢薄膜生長
使用WCl6
及化合物(Ie-1)之初始ALD薄膜生長試驗使銀灰色薄膜沈積,在275至375℃之生長溫度下之生長速率在1.6至1.8埃/循環之間且電阻率在850至1350 μΩ-cm之間(圖5)。此等結果類似於使用TiCl4
及化合物(Ie-1)獲得之彼等結果。基於能量色散X射線光譜分析(energy-dispersive X-ray spectroscopy,EDS)之薄膜組成由W及C以及較小Cl及Al含量組成。EDS未偵測到N,而針對自TiCl4
及化合物(Ie-1)沈積之薄膜觀測到清晰N信號。因此,此等薄膜有可能為WCx
而不可能為WCx
Ny
。基於W對比Ti之更容易還原,W金屬薄膜有可能在較低溫度下形成。
實施例7:自AlCl3 及化合物(Ie-1)之鋁金屬薄膜生長
實施例7:自AlCl3 及化合物(Ie-1)之鋁金屬薄膜生長
在使用AlCl3
作為金屬前驅體及化合物(Ie-1)作為還原劑之情況下,在120℃下沈積Al金屬薄膜。脈衝序列為2 s AlCl3
脈衝、20 s N2
吹掃氣體、5 s化合物(Ie-1)脈衝、10 s N2
吹掃氣體,達125個循環,其在Cu基板上沈積42 nm薄膜(圖6)。薄片電阻率為1.56 Ω/平方,對應於6.5 μΩ-cm之計算出的體電阻率,接近於塊體Al金屬之電阻率(2.74 μΩ-cm)。在250個循環之後,沈積於Cu及TiN基板上之80 nm厚的薄膜具有0.65 Ω/平方之薄片電阻率及5.0 μΩ-cm之體電阻率。
經沈積薄膜根據GI-XRD為晶體Al金屬。圖7展示在Al金屬之典型111及200反射情況下沈積於SiO2
(Si上之100 nm熱氧化物)基板上之400 nm厚的Al薄膜之GI-XRD圖案。
實施例8a:化合物(Ii-3)之配位體之合成
實施例8a:化合物(Ii-3)之配位體之合成
在100 mL圓底燒瓶中使3-二甲胺基丙基氯鹽酸鹽(10.046 g,0.062 mol)、第三丁胺(30 mL,0.280 mol)及水(5 mL)之混合物回流達18小時。在環境溫度下將己烷(25 mL)及水(20 mL)添加至所得溶液。將燒瓶內含物轉移至分液漏斗。用己烷(9×25 mL)洗滌水性溶離份,且使合併之有機溶離份經無水MgSO4
脫水。在減壓下蒸發溶劑以得到無色油(3.798 g,39%產量)。
1
H NMR(400 MHz,C6
D6
)δ = 1.03(s,9H)、1.56(五重峰,2H)、2.11(s,6H)、2.26(t,2H)、2.55(t,2H)
13 C NMR(100 MHz,C6 D6 )δ = 29.69、30.17、41.48、46.10、50.32、58.85
實施例8b:化合物(Ii-3)之合成
13 C NMR(100 MHz,C6 D6 )δ = 29.69、30.17、41.48、46.10、50.32、58.85
實施例8b:化合物(Ii-3)之合成
在冰浴中於0℃下將AlCl3
(0.800 g,6 mmol)於30 mL二乙醚中之溶液經套管導入LiAlH4
(0.719 g,18 mmol)於45 mL二乙醚中之攪拌溶液中。將所得混濁溶液升溫至室溫,攪拌40 min且再冷卻至-30℃。接著,逐滴添加[3-(第三丁胺基)丙基]二甲胺(3.798 g,24 mmol)於45 mL二乙醚中之溶液。在環境溫度下將所得混合物攪拌18小時,且隨後經由2-cm矽藻土塞於粗玻璃粉上進行過濾。在減壓下自濾液蒸發二乙醚以收集白色半固體。藉由在減壓下約60℃之蒸餾來純化粗產物,從而得到無色油(1.301 g,30%產量)。
1
H NMR(400 MHz,C6
D6
)δ = 1.27(五重峰,2H)、1.30(s,9H)、1.95(s,6H)、2.08(t,2H)、2.99(t,2H)
13 C NMR(100 MHz,C6 D6 )δ = 28.79、31.77、45.73、45.82、53.01、62.02,IR:vAIH /cm-1 1801。
13 C NMR(100 MHz,C6 D6 )δ = 28.79、31.77、45.73、45.82、53.01、62.02,IR:vAIH /cm-1 1801。
無
圖1展示化合物(Ie-1)、(Ie-5)及(III-1)之熱解重量分析(thermogravimetric analyses,TGA)。
圖2展示化合物(Ie-5)之X射線晶體結構。
圖3左上方展現化合物(Ie-1)之生長率及體電阻率對比脈衝長度。圖3右上方展現TiCl4
之生長率及電阻率對比脈衝長度。圖3左下方展現生長率及電阻率對比溫度。圖3右下方展現薄膜厚度對比循環數目。
圖4展示在280℃(底部)及400℃(頂部)下所沈積之TiCx
Ny
薄膜之GI-XRD圖案。
圖5展現在250次ALD循環之後自WCl6
及化合物(Ie-1)沈積之薄膜之生長率及薄膜電阻率對比溫度。
圖6展示在AlCl3
及化合物(Ie-1)之125次ALD循環之後在120℃下沈積於Cu基板上之42 nm Al薄膜之橫截面SEM影像。
圖7展現在1000次ALD循環之後在120℃下沈積於熱氧化物(在Si上為100 nm)上之400 nm厚的Al薄膜之GI-XRD圖案。
Claims (11)
- 一種用於製備無機含金屬薄膜之方法,其包含使固體基板與呈氣態之通式(I)或(II)化合物接觸 其中A為NR2 或OR,其中R為烷基、烯基、芳基或矽烷基, E為NR或O, n為1、2或3,且 R'為氫、烷基、烯基、芳基或矽烷基, 其中若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子。
- 如請求項1所述之方法,其中R為甲基、乙基、第三丁基、三甲基矽烷基,或兩個R一起形成五員環,且R'為氫。
- 如請求項1或2中任一項所述之方法,其中在使該固體基板與通式(I)或(II)化合物接觸之前,使含金屬化合物自氣態沈積至該固體基板上。
- 如請求項3所述之方法,其中該含金屬化合物含有Ti、Ta、Mn、Mo、W、Al、Co、Ga、Ge、Sb或Te。
- 如請求項3所述之方法,其中該含金屬化合物為金屬鹵化物。
- 如請求項1或2所述之方法,其中所吸附的通式(I)或(II)化合物經分解。
- 如請求項3所述之方法,其中含有使固體基板與通式(I)或(II)化合物接觸及沈積含金屬化合物或分解所吸附的通式(I)或(II)化合物之工序執行至少兩次。
- 如請求項1或2所述之方法,其中該通式(I)化合物具有不超過600 g/mol之分子量。
- 如請求項1或2所述之方法,其中該通式(I)化合物在200℃之溫度下具有至少1 mbar之蒸汽壓力。
- 一種通式(I)或(II)化合物 其中A為NR2 或OR,其中R為烷基、烯基、芳基或矽烷基, E為NR或O, n為0、1或2,m為0、1或2,且 R'為氫、烷基、烯基、芳基或矽烷基, 其中若n為2且E為NR或A為OR,則NR或OR中之至少一個R在1位不帶有氫原子。
- 如請求項10所述之化合物,其中R'為氫,且R為R為甲基、乙基、第三丁基或三甲基矽烷基,或兩個R一起形成五員環。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762763125P | 2017-12-20 | 2017-12-20 | |
US62/763125 | 2017-12-20 | ||
US201862763136P | 2018-03-07 | 2018-03-07 | |
US62/763136 | 2018-03-07 | ||
??PCT/EP2018/080738 | 2018-11-09 | ||
PCT/EP2018/080738 WO2019120743A1 (en) | 2017-12-20 | 2018-11-09 | Process for the generation of metal-containing films |
WOPCT/EP2018/080738 | 2018-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201930630A true TW201930630A (zh) | 2019-08-01 |
TWI800579B TWI800579B (zh) | 2023-05-01 |
Family
ID=64270896
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107133179A TWI787353B (zh) | 2017-12-20 | 2018-09-20 | 用於產生含金屬膜的方法 |
TW107145710A TWI800579B (zh) | 2017-12-20 | 2018-12-18 | 用於產生含金屬薄膜的方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107133179A TWI787353B (zh) | 2017-12-20 | 2018-09-20 | 用於產生含金屬膜的方法 |
Country Status (9)
Country | Link |
---|---|
US (3) | US11319332B2 (zh) |
EP (3) | EP3957769A1 (zh) |
JP (3) | JP2021507123A (zh) |
KR (2) | KR20200111181A (zh) |
CN (2) | CN111727272B (zh) |
IL (2) | IL275283B1 (zh) |
SG (2) | SG11202005468YA (zh) |
TW (2) | TWI787353B (zh) |
WO (2) | WO2019120650A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11319332B2 (en) * | 2017-12-20 | 2022-05-03 | Basf Se | Process for the generation of metal-containing films |
JP7401928B2 (ja) * | 2018-07-30 | 2023-12-20 | ユーピー ケミカル カンパニー リミテッド | アルミニウム化合物及びこれを使用したアルミニウム含有膜の形成方法 |
EP3795714A1 (en) * | 2019-09-17 | 2021-03-24 | Basf Se | Process for the generation of aluminum-containing films |
JP7159254B2 (ja) * | 2020-09-18 | 2022-10-24 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム及び基板処理装置 |
WO2023212652A1 (en) * | 2022-04-27 | 2023-11-02 | Impact Nano Llc | High purity ligand-al-hydride compositions |
WO2024008624A1 (en) * | 2022-07-06 | 2024-01-11 | Basf Se | Process for preparing of transition metal-containing films |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3520929A (en) | 1966-10-19 | 1970-07-21 | Exxon Research Engineering Co | Hexafluoro-2-propanol-2-amines |
US3892607A (en) * | 1967-04-28 | 1975-07-01 | Philips Corp | Method of manufacturing semiconductor devices |
US3988337A (en) | 1974-12-19 | 1976-10-26 | Basf Wyandotte Corporation | Substituted triamino-s-triazines |
US5924012A (en) * | 1996-10-02 | 1999-07-13 | Micron Technology, Inc. | Methods, complexes, and system for forming metal-containing films |
US5874131A (en) | 1996-10-02 | 1999-02-23 | Micron Technology, Inc. | CVD method for forming metal-containing films |
KR100246155B1 (ko) * | 1997-07-28 | 2000-04-01 | 최형수 | 알루미늄 화학 증착법을 위한 새로운 아마이도 알란 전구체 |
JP3275825B2 (ja) * | 1998-03-06 | 2002-04-22 | 株式会社日立製作所 | 磁気ディスク装置 |
AU750670B2 (en) * | 1998-07-24 | 2002-07-25 | Teijin Limited | Anthranilic acid derivatives |
KR100289945B1 (ko) * | 1998-09-15 | 2001-09-17 | 신현국 | 알루미늄박막의화학증착용전구체화합물및이의제조방법 |
JP3625143B2 (ja) | 1998-12-28 | 2005-03-02 | 大日精化工業株式会社 | 顔料の分散剤、顔料分散液及びカラーフイルター |
US20020013487A1 (en) * | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
US6602356B1 (en) * | 2000-09-20 | 2003-08-05 | General Electric Company | CVD aluminiding process for producing a modified platinum aluminide bond coat for improved high temperature performance |
JP4780866B2 (ja) * | 2001-07-23 | 2011-09-28 | 株式会社Adeka | 化学気相成長用原料及びこれを用いた薄膜の製造方法 |
EP1335416A1 (en) * | 2002-01-17 | 2003-08-13 | Shipley Co. L.L.C. | Preparation of monoalkyl group 15 metal dihalides and dihydrides |
WO2004107297A1 (ja) * | 2003-05-29 | 2004-12-09 | Konica Minolta Holdings, Inc. | ディスプレイ基板用透明フィルム、該フィルムを用いたディスプレイ基板およびその製造方法、液晶ディスプレイ、有機エレクトロルミネッセンスディスプレイ、およびタッチパネル |
CA2530374C (en) | 2003-06-27 | 2012-05-15 | Kyowa Hakko Kogyo Co., Ltd. | Hsp90 family protein inhibitors |
US7009081B2 (en) | 2003-08-04 | 2006-03-07 | Air Products And Chemicals, Inc. | N-methylated amines from selective vapor phase amination of amino ether alcohols |
US20060088660A1 (en) * | 2004-10-26 | 2006-04-27 | Putkonen Matti I | Methods of depositing lead containing oxides films |
JPWO2006051851A1 (ja) | 2004-11-10 | 2008-05-29 | わかもと製薬株式会社 | 2,3,4,5−テトラヒドロ−1h−1,5−ベンゾジアゼピン誘導体、及び、医薬組成物 |
NO20045674D0 (no) * | 2004-12-28 | 2004-12-28 | Uni I Oslo | Thin films prepared with gas phase deposition technique |
CN101155640A (zh) * | 2005-02-14 | 2008-04-02 | 普莱克斯技术有限公司 | 有机铝前体化合物 |
US20060193984A1 (en) * | 2005-02-14 | 2006-08-31 | Peters David W | Organoaluminum precursor compounds |
US7348445B2 (en) * | 2005-02-14 | 2008-03-25 | Praxair Technology, Inc. | Organoaluminum precursor compounds |
KR100724084B1 (ko) * | 2005-11-16 | 2007-06-04 | 주식회사 유피케미칼 | 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법 |
JP5062507B2 (ja) * | 2006-02-08 | 2012-10-31 | 学校法人早稲田大学 | アルミナ膜とその製造方法並びに光学装置 |
DE102006015378A1 (de) * | 2006-04-03 | 2007-10-04 | Ludwig-Maximilians-Universität München | Verfahren zur Synthese von Organoelementverbindungen |
KR100756403B1 (ko) * | 2006-05-18 | 2007-09-10 | (주)디엔에프 | 알루미늄 박막의 화학증착용 전구체 화합물의 제조방법 |
US7547631B2 (en) * | 2006-07-31 | 2009-06-16 | Rohm And Haas Electronic Materials Llc | Organometallic compounds |
US7959986B2 (en) * | 2006-08-09 | 2011-06-14 | Praxair Technology, Inc. | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
CN101541721A (zh) | 2006-11-27 | 2009-09-23 | 巴斯夫欧洲公司 | 制备3-烷氧基丙-1-醇的方法 |
US20080300359A1 (en) * | 2007-05-15 | 2008-12-04 | Fujifilm Corporation | Aqueous coating material composition |
AU2008278228A1 (en) | 2007-07-16 | 2009-01-22 | F. Hoffmann-La Roche Ag | An anti-cancer cytotoxic monoclonal antibody |
US7659414B2 (en) * | 2007-07-20 | 2010-02-09 | Rohm And Haas Company | Method of preparing organometallic compounds |
WO2009057058A1 (en) | 2007-10-29 | 2009-05-07 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Alkaline earth metal containing precursor solutions |
DE102007058571B4 (de) * | 2007-12-05 | 2012-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens |
PT2321257E (pt) | 2008-08-14 | 2013-07-09 | Dow Global Technologies Llc | Produção de misturas de metilenodianilina e seus maiores homólogos usando catalisadores calcinados de sílica-óxidos metálicos |
JP5477557B2 (ja) | 2008-09-09 | 2014-04-23 | 高砂香料工業株式会社 | エステル又はラクトン類の水素還元によるアルコール類の製造方法 |
CN102307888B (zh) * | 2009-02-06 | 2014-11-05 | 陶氏环球技术有限责任公司 | 制造烷基铝的方法 |
US9822446B2 (en) * | 2010-08-24 | 2017-11-21 | Wayne State University | Thermally stable volatile precursors |
US8632853B2 (en) * | 2010-10-29 | 2014-01-21 | Applied Materials, Inc. | Use of nitrogen-containing ligands in atomic layer deposition methods |
CN103298971B (zh) * | 2010-11-17 | 2015-07-08 | Up化学株式会社 | 基于二氮杂二烯的金属化合物、其生产方法和使用其形成薄膜的方法 |
FR2981860B1 (fr) | 2011-10-28 | 2013-11-08 | IFP Energies Nouvelles | Solution absorbante a base de monoalcanolamines tertiaires appartenant a la famille des 3-alcoxypropylamines et procede d'elimination de composes acides contenus dans un effluent gazeux |
US8927059B2 (en) * | 2011-11-08 | 2015-01-06 | Applied Materials, Inc. | Deposition of metal films using alane-based precursors |
WO2013123225A1 (en) * | 2012-02-17 | 2013-08-22 | Applied Materials, Inc. | Passivation film stack for silicon-based solar cells |
US9714464B2 (en) * | 2012-06-11 | 2017-07-25 | Wayne State University | Precursors for atomic layer deposition |
WO2014015237A1 (en) * | 2012-07-20 | 2014-01-23 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organosilane precursors for ald/cvd silicon-containing film applications |
EP2940025B1 (en) * | 2012-12-25 | 2017-02-01 | Adeka Corporation | Aluminum compound, thin film-forming raw material, and method for producing thin film |
US9245740B2 (en) * | 2013-06-07 | 2016-01-26 | Dnf Co., Ltd. | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same |
US9249505B2 (en) * | 2013-06-28 | 2016-02-02 | Wayne State University | Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate |
US20160348243A1 (en) * | 2014-01-27 | 2016-12-01 | Basf Se | Process for the generation of thin inorganic films |
CN106661728B (zh) * | 2014-08-04 | 2019-06-28 | 巴斯夫欧洲公司 | 生成薄无机膜的方法 |
CN105585445B (zh) | 2014-10-24 | 2017-11-21 | 中国石油化工股份有限公司 | 1,3‑丙二醇的制备方法 |
CN111170998B (zh) | 2014-11-05 | 2023-04-11 | 益方生物科技(上海)股份有限公司 | 嘧啶或吡啶类化合物、其制备方法和医药用途 |
JP6462155B2 (ja) | 2015-05-04 | 2019-01-30 | エフ.ホフマン−ラ ロシュ アーゲーF. Hoffmann−La Roche Aktiengesellschaft | B型肝炎ウイルス感染症の治療用のHBsAg(HBV表面抗原)及びHBV DNA産生の阻害剤としてのテトラヒドロピリドピリミジン類及びテトラヒドロピリドピリジン類 |
US10745808B2 (en) | 2015-07-24 | 2020-08-18 | Versum Materials Us, Llc | Methods for depositing Group 13 metal or metalloid nitride films |
SG11201804019QA (en) | 2015-11-30 | 2018-06-28 | Basf Se | Process for the generation of metallic films |
CN105907352B (zh) * | 2016-06-24 | 2019-05-21 | 江苏景宏新材料科技有限公司 | 一种碱性干电池标签用热熔压敏胶及其制备方法 |
US20190360096A1 (en) | 2016-10-13 | 2019-11-28 | Basf Se | Process for the generation of metal-containing films |
SG11201902257TA (en) | 2016-10-25 | 2019-05-30 | Basf Se | Process for the generation of thin silicon-containing films |
WO2018108628A1 (en) | 2016-12-13 | 2018-06-21 | Basf Se | Process for the generation of thin silicon-containing films |
US11319332B2 (en) * | 2017-12-20 | 2022-05-03 | Basf Se | Process for the generation of metal-containing films |
SG11202008268RA (en) * | 2018-03-19 | 2020-10-29 | Applied Materials Inc | Methods for depositing coatings on aerospace components |
JP7401928B2 (ja) * | 2018-07-30 | 2023-12-20 | ユーピー ケミカル カンパニー リミテッド | アルミニウム化合物及びこれを使用したアルミニウム含有膜の形成方法 |
-
2018
- 2018-09-17 US US16/954,341 patent/US11319332B2/en active Active
- 2018-09-17 SG SG11202005468YA patent/SG11202005468YA/en unknown
- 2018-09-17 WO PCT/EP2018/075053 patent/WO2019120650A1/en unknown
- 2018-09-17 EP EP21195339.3A patent/EP3957769A1/en active Pending
- 2018-09-17 CN CN201880079938.3A patent/CN111727272B/zh active Active
- 2018-09-17 EP EP18773134.4A patent/EP3728688B1/en active Active
- 2018-09-17 KR KR1020207020987A patent/KR20200111181A/ko active IP Right Grant
- 2018-09-17 JP JP2020554368A patent/JP2021507123A/ja active Pending
- 2018-09-20 TW TW107133179A patent/TWI787353B/zh active
- 2018-11-09 WO PCT/EP2018/080738 patent/WO2019120743A1/en unknown
- 2018-11-09 JP JP2020554370A patent/JP2021507124A/ja active Pending
- 2018-11-09 US US16/954,371 patent/US11505562B2/en active Active
- 2018-11-09 EP EP18800621.7A patent/EP3728689A1/en active Pending
- 2018-11-09 IL IL275283A patent/IL275283B1/en unknown
- 2018-11-09 KR KR1020207020988A patent/KR20200111182A/ko not_active Application Discontinuation
- 2018-11-09 CN CN201880079468.0A patent/CN111727271B/zh active Active
- 2018-11-09 SG SG11202005470SA patent/SG11202005470SA/en unknown
- 2018-12-18 TW TW107145710A patent/TWI800579B/zh active
-
2020
- 2020-06-10 IL IL275284A patent/IL275284A/en unknown
-
2022
- 2022-03-31 US US17/710,178 patent/US11655262B2/en active Active
-
2024
- 2024-01-18 JP JP2024005969A patent/JP2024054140A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3728689A1 (en) | 2020-10-28 |
US11505562B2 (en) | 2022-11-22 |
JP2021507124A (ja) | 2021-02-22 |
CN111727272B (zh) | 2023-04-28 |
EP3728688B1 (en) | 2021-11-10 |
EP3728688A1 (en) | 2020-10-28 |
KR20200111182A (ko) | 2020-09-28 |
IL275283A (en) | 2020-07-30 |
US20210079025A1 (en) | 2021-03-18 |
IL275283B1 (en) | 2024-03-01 |
WO2019120743A1 (en) | 2019-06-27 |
WO2019120650A1 (en) | 2019-06-27 |
TWI800579B (zh) | 2023-05-01 |
EP3957769A1 (en) | 2022-02-23 |
IL275284A (en) | 2020-07-30 |
JP2021507123A (ja) | 2021-02-22 |
US20220220131A1 (en) | 2022-07-14 |
CN111727271A (zh) | 2020-09-29 |
KR20200111181A (ko) | 2020-09-28 |
SG11202005470SA (en) | 2020-07-29 |
TW201930629A (zh) | 2019-08-01 |
US11655262B2 (en) | 2023-05-23 |
TWI787353B (zh) | 2022-12-21 |
SG11202005468YA (en) | 2020-07-29 |
CN111727272A (zh) | 2020-09-29 |
US11319332B2 (en) | 2022-05-03 |
JP2024054140A (ja) | 2024-04-16 |
US20210079520A1 (en) | 2021-03-18 |
CN111727271B (zh) | 2024-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201930630A (zh) | 用於產生含金屬薄膜的方法 | |
TWI630200B (zh) | 揮發性二氫吡嗪基及二氫吡嗪金屬錯合物 | |
TWI742022B (zh) | 生成金屬膜的方法 | |
TW201638374A (zh) | 產生薄無機膜之方法 | |
TWI815904B (zh) | 生產含金屬或半金屬薄膜之方法 | |
TW201610212A (zh) | 生成薄無機膜之方法 | |
TW201829833A (zh) | 產生含金屬之膜的方法 | |
KR20180111865A (ko) | 얇은 무기 필름의 생성 방법 | |
CN111954674B (zh) | 铝前体和生成含金属膜的方法 | |
CN113906158A (zh) | 生成含金属或半金属膜的方法 | |
TW201807246A (zh) | 無機薄膜之生成方法 | |
CN112384639B (zh) | 生成含金属或半金属膜的方法 | |
TW201823262A (zh) | 產生薄無機膜的方法 | |
TW202112787A (zh) | 產生含金屬或半金屬的膜之方法 | |
CN114729449A (zh) | 产生含金属或含半金属的膜的方法 |