TW201919163A - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
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Abstract
半導體裝置中,包括:半導體元件(2),在半導體晶片(1)的主面上具有電極以及配線;第1樹脂構造體(A),配置在此半導體晶片(1)的主面側,上述半導體元件(2)在特定電極(3)的側邊以及上方與上述特定電極(3)之間構成中空構造(8);第2樹脂構造體(B),覆蓋上述第1樹脂構造體(A)的外側,具有上述第1樹脂構造體(A)的介電常數以下的介電常數;以及絕緣膜(11),覆蓋上述第2樹脂構造體(B)的外側,透濕性比上述第2樹脂構造體(B)小。
Description
本發明係關於半導體元件在電極的周圍具有中空構造之半導體裝置及其製造方法。
為了實現半導體裝置的高積體化與小型化,採用在半導體晶片上反覆積層樹脂膜與金屬配線的多層配線構造。但是,由於樹脂膜,例如場效電晶體(簡稱FET,以下相同)的閘極與源極間,或是閘極與汲極間的寄生電容增加,半導體元件的高頻特性惡化。
又,不採用多層配線而收納半導體晶片至封裝內的構造之半導體裝置中,也為了小型化、低價格化,比陶瓷等的絕緣體的中空容器內裝載半導體晶片的構造,以樹脂模密封半導體晶片的封裝構造有可能最理想,但相較於中空密封的情況,由於樹脂模密封採用的樹脂的介電常數,寄生電容(等同雜散電容。以下相同)增加,增益等的高頻特性產生惡化。
於是為了改善這些高頻特性的的惡化,提議在半導體晶片上形成中空構造,藉以抑制寄生電容增加的構造之半導體裝置(例如,參照專利文件1、專利文件2)。
半導體晶片上的中空構造,例如以下列步驟形成:(a)半導體基板的主面上形成FET後,(b)其半導體基板的 主面上,不與FET的閘極電極接觸而形成圍繞閘極電極的側邊之第1樹脂層,(c)還有不接觸閘極電極而使覆蓋閘極電極的上方的第2樹脂層接合第1樹脂構造的上面,形成中空構造,之後進行加熱處理,使樹脂構造硬化。(d)形成中空構造、利用比樹脂透濕性小的絕緣膜覆蓋中空構造,使中空構造的耐濕性提高等。
[專利文件1]日本專利平成5年第335343號公開公報
[專利文件2]日本專利第2016-39319號公開公報
中空構造的形成中,使第2樹脂層接合至第1樹脂層的上方(參照上述(c)所示的步驟)之際的壓力又弱又不均等時,有密合性變弱的課題。在密合性弱的部分,接合剝離形成水分往中空構造內的侵入路徑,有使半導體元件的耐濕性惡化的問題。
又,裝載此半導體晶片至封裝內時,高溫高壓密封樹脂模之際,密合性弱的部分被破壞,有模型樹脂侵入中空構造內的問題。
因為此發明係用以解決上述的問題,目的在於半導體晶片上具有中空構造的半導體裝置中,得到防止耐濕性的惡化或中空構造的破壞之構造的半導體裝置以及其製造方法。
根據本發明的半導體裝置,包括:半導體元件,在半導體晶片的主面上具有電極以及配線;第1樹脂構造體,配置在上述半導體晶片的主面側,與上述半導體元件的特定電極隔開空間,覆蓋上述特定電極的側邊以及上方;第2樹脂構造體,覆蓋上述第1樹脂構造體的外側,具有上述第1樹脂構造體的介電常數以下的介電常數;以及絕緣膜,覆蓋上述第2樹脂構造體的外側,透濕性比上述第2樹脂構造體小。
此發明的半導體裝置,以不接觸電極的樹脂構造體形成中空構造,此樹脂構造體的中空構造的外側,因為以備置構成此中空構造的樹脂構造體的介電常數以下的介電常數的樹脂覆蓋,樹脂構造體的接合剝離,不形成往中空構造內的水分侵入路徑,可以防止半導體元件的耐濕性惡化。又,因為可以降低電極與配線間的寄生電容,可以使半導體裝置的高頻特性提高。
1‧‧‧半導體晶片
2‧‧‧半導體元件
3‧‧‧閘極電極
4‧‧‧源極電極
5‧‧‧汲極電極
6‧‧‧配線
7‧‧‧絕緣膜
8‧‧‧中空構造
9‧‧‧第1樹脂層
10‧‧‧第2樹脂層
11‧‧‧絕緣膜
12‧‧‧配線
15‧‧‧半導體基板
21‧‧‧框架
22、22a、22b‧‧‧金屬線
23‧‧‧環氧樹脂系熱硬化樹脂體
A‧‧‧第1樹脂構造體
B‧‧‧第2樹脂構造體
C‧‧‧第3樹脂構造體
[第1圖]係顯示此發明的第一實施形態的半導體裝置的一例之剖面圖;[第2圖]係沿著第1圖的CS1-CS2的剖面圖;[第3圖]用以說明根據此發明的第一實施形態的半導體裝置的晶圓的製造步驟的一系列的圖中,第1個圖;[第4圖]用以說明根據此發明的第一實施形態的半導體裝 置的晶圓的製造步驟的一系列的圖中,第2個圖;[第5圖]用以說明根據此發明的第一實施形態的半導體裝置的晶圓的製造步驟的一系列的圖中,第3個圖;[第6圖]係顯示此發明的第二實施形態的半導體裝置的一例之剖面圖;[第7圖]係顯示此發明的第三實施形態的半導體裝置的一例之剖面圖;以及[第8圖]係顯示此發明的第四實施形態的半導體裝置的一例之剖面圖。
利用以下圖說明關於本發明的第一實施形態的半導體裝置。第1圖係顯示此發明的第一實施形態的半導體裝置的一例。又,第2圖係沿著第1圖的CS1-CS2的剖面圖。
根據本第一實施形態的半導體裝置中,半導體晶片1的主面上,形成半導體元件2,半導體元件2係具有包含簷部的Y型或T型的閘極電極3、源極電極4、汲極電極5以及配線6之場效電晶體(FET)。FET之外,也有可能形成二極體等其它的元件,半導體元件2,以氮化矽膜(例如SiN)等的絕緣膜7覆蓋。
又,半導體元件2的閘極電極3,以採用聚醯亞胺(polyimid)的第1樹脂層9以及第2樹脂層10,覆蓋側邊(係具有與閘極電極的側面同程度的面積的面並與閘極電極的側面平行的面的集合構成的閘極電極的外側的空間部分)與(閘極電 極的)上方,第1樹脂層9以及第2樹脂層10形成的樹脂構成體(圖中,以符號A表示的部分。以下,稱作第1樹脂構造體),不接觸閘極電極3,形成中空構造8。此第1樹脂構造體A的材料中,上述係以採用相對介電常數3左右的聚醯亞胺的情況為前提說明,但採用相對介電常數2.5~2.7左右的苯環丁烯樹脂(以下稱BCB(BCB:Benzocyclobutene)樹脂)也可以。又,以下,有時稱上述中空構造內的電極(上述例中,閘極電極)為特定電極。
上述第1樹脂構造體A的外側,以採用BCB樹脂的第2樹脂構造體B覆蓋。以此方式,此第2樹脂構造體B的材料中,使用具有與第1樹脂構造體A中採用的樹脂相同或比第1樹脂構造體A中採用的樹脂低的介電常數之樹脂。
配線12在第1樹脂構造體A的上方夾住(介有)第2樹脂構造體B形成,第2樹脂構造體B的外側,覆蓋透濕性(單位時間、每單位面積、透過的水份量值例如,表示每1m2在24小時以幾克的水份透過的值)比第2樹脂構造體B中採用的樹脂小的氮化矽膜(例如SiN)等的絕緣膜11以及配線12。
其次,有關本第一實施形態的半導體裝置的晶圓製造步驟(參照第3~5圖)。
首先,如第3圖所示,相當於上述的半導體晶片1的半導體基板15的主面上形成半導體元件2,以絕緣膜7覆蓋半導體元件2。於是,半導體基板15的主面上與半導體元件2上,塗佈感光性聚醯亞胺等的感光性樹脂形成樹脂膜後,藉由曝光與顯影圖案化,不與閘極電極3接觸,形成圍繞閘極電極3側邊 的第1樹脂層9。此時,樹脂構造的上方,形成配線之處,也可以同樣圖案化保持開口。
其次,如第4圖所示,將半硬化狀態的感光性聚醯亞胺的薄片貼至第1樹脂層9的上面形成密封中空構造的第2樹脂層10,藉由曝光與顯影圖案化樹脂模,配線的接觸部等在必要處設置開口後進行加熱處理,使第1樹脂層9以及第2樹脂層10硬化。
其次,如第5圖所示,半導體基板15的主面上,或第1樹脂構造體A上塗佈BCB樹脂形成樹脂膜並使其硬化後,以乾蝕刻除去開口部或不要部,形成第2樹脂構造體B。之後,形成配線12,還有以氮化矽膜(例如SiN)等的絕緣膜11(未圖示),覆蓋第2樹脂構造體B的側面或上方的露出部,藉此可以製造第1圖的半導體裝置。
其次,以下說明本第一實施形態的半導體裝置的作用。本第一實施形態的半導體裝置中,上述第1樹脂構造體A中即使有密合性弱的部分,藉由第2樹脂構造體B補強此弱的部分,因為防止第1樹脂構造體A的接合剝離形成水分往中空構造內的侵入路徑,可以防止半導體元件2的耐濕性惡化。
又,由於本第一實施形態的半導體裝置的第2樹脂構造體B的樹脂的介電常數比第2樹脂層10的介電常數低,比只形成第1樹脂構造體A的情況,可以降低在閘極電極3與配線12間或汲極電極5與配線12間的寄生電容。由於形成如此的構成,可以使半導體裝置的高頻特性提高。
利用圖說明關於本發明的第二實施形態的半導體裝置。第6圖係顯示第二實施形態的半導體裝置的一例之剖面圖。半導體晶片1的主面上,形成半導體元件2。
半導體元件2,係具有包含簷部的Y型或T型的閘極電極3、源極電極4、汲極電極5以及配線6之場效電晶體(FET)。FET之外,也有可能形成二極體等其它的元件。在此,半導體元件2,以氮化矽膜(例如SiN)等的絕緣膜7覆蓋。
半導體元件2的閘極電極3,以採用聚醯亞胺(polyimid)的第1樹脂層9以及第2樹脂層10,覆蓋側邊與上方,第1樹脂層9以及第2樹脂層10形成的第1樹脂構造體A不接觸閘極電極3,形成中空構造8。第1樹脂構造體A的材料中,上述係採用聚醯亞胺,但採用BCB樹脂等也可以。又,就在第1樹脂構造體A的外側,被覆蓋比第1樹脂構造體A中採用的樹脂透濕性小的氮化矽膜(例如,SiN)等的絕緣膜11。
半導體晶片1,裝載於封裝的框架21內,以金屬線22(圖中,金屬線22a以及金屬線22b),電性連接半導體晶片1與框架21。
又,此半導體晶片1中,上述絕緣膜11的外側,塗佈與第1樹脂構造體A中採用的樹脂介電常數相同或較其低的第2樹脂構造體B,之後,以相對介電常數4左右的環氧樹脂系熱硬化樹脂體23密封,封裝化。
又,本第二實施形態的半導體裝置中,如第6圖所示,第2樹脂構造體B成為保護第1樹脂構造體A的構造。 於是,根據此構造,以上述的環氧樹脂系熱硬化樹脂體在高溫高壓環境下模型密封之際,可以防止第1樹脂構造體A的密合性弱的部分被破壞而模型樹脂侵入第1樹脂構造體A的中空構造內。
本第二實施形態的半導體裝置中,尤其,由於使第2樹脂構造體B的介電常數降得比環氧樹脂系熱硬化樹脂體23低,比起只形成第1樹脂構造體A的情況,閘極電極3與配線6間的寄生電容的降低效果變大。藉此,本第二實施形態的半導體裝置中,可以使高頻特性提高。
又,以上,作為覆蓋絕緣膜11的外側的樹脂構造體,以具有介電常數在第1樹脂構造體A以下的介電常數之第2樹脂構造體為例說明,但取代此第2樹脂構造體,塗佈介電常數比其更低,例如相對介電常數2左右,酚樹脂代表的第3樹脂構造體C(未圖示)時,當然更增加其效果。
其次,利用圖說明關於本發明的第三實施形態的半導體裝置。第7圖中,半導體晶片1的主面上,形成半導體元件2。此半導體元件2,係具有包含簷部的Y型或T型的閘極電極3、源極電極4、汲極電極5以及配線6之場效電晶體(FET)。FET之外,也有可能形成二極體等其它的元件。
又,上述半導體元件2以氮化矽膜(例如SiN)等的絕緣膜7覆蓋。此半導體元件2的閘極電極3,以採用聚醯亞胺(polyimid)的第1樹脂層9以及第2樹脂層10覆蓋側邊與上方,第1樹脂層9以及第2樹脂層10形成的第1樹脂構造體 A不接觸閘極電極3,形成中空構造8。
上述中,本第三實施例的半導體裝置中的第1樹脂構造體A的材料中,以採用相對介電常數3左右的聚醯亞胺的情況為前提說明,但採用相對介電常數2.5~2.7左右的BCB樹脂等也可以。
本實施形態中,第1樹脂構造體A的外側,被覆蓋採用BCB樹脂的第2樹脂構造體B。第2樹脂構造體B中,採用BCB樹脂以外的相對介電常數2.5~2.7左右的樹脂也可以,使用具有與第1樹脂構造體A中採用的樹脂相同或比第1樹脂構造體A中採用的樹脂低的介電常數之樹脂。
又,第2樹脂構造體B的外側,被覆蓋透濕性比第2樹脂構造體B中採用的樹脂小的氮化矽膜(例如,SiN)等的絕緣膜11。
又,第三實施形態的半導體裝置中,半導體晶片1裝載於封裝的框架21內,以金屬線22(圖中,金屬線22a以及金屬線22b),電性連接半導體晶片1與框架21,之後,與第二實施形態說明的相同,以環氧樹脂系熱硬化樹脂體23密封,封裝化。
其次,以下說明關於第三實施形態的半導體裝置的作用。以上述的環氧樹脂系熱硬化樹脂體23在高溫高壓環境下模型密封之際,第2樹脂構造體B保護第1樹脂構造體A。藉此,可以防止第1樹脂構造體A的密合性弱的部分被破壞而模型樹脂侵入中空構造內。
又,由於第2樹脂構造體B的介電常數比環氧樹 脂系熱硬化樹脂體23低,比起只形成第1樹脂構造體A的情況,可以降低閘極電極3與配線6間或是閘極電極3與金屬線22間的寄生電容。藉此,可以使本第三實施形態的半導體裝置的高頻特性提高。
其次,利用第8圖說明關於本發明的第四實施形態的半導體裝置。本第四實施形態的半導體裝置大體成為組合上述第二實施形態與第三實施形態的構造。
關於此實施形態,與第二實施形態的情況不同(具體而言,如第8圖所示),在第1樹脂構造體A的外側,設置具有比第1樹脂構造體A中採用的樹脂低的介電常數之第2樹脂構造體B。於是,透濕性比此第2樹脂構造體B小的氮化矽膜(例如SiN)等的絕緣膜11覆蓋此第2樹脂構造體B的外側。
還有,此絕緣膜11的外側,塗佈介電常數比第1樹脂構造體A低,例如相對介電常數在2左右的酚樹脂代表的第3樹脂構造體C。
又,本第四實施形態的半導體裝置的作用與效果,因為與上述第二實施形態或第三實施形態相同,在此省略其說明。
又,本發明,在其發明的範圍內,自由組合各實施形態等,能夠適當變更、省略各實施形態。
Claims (8)
- 一種半導體裝置,其特徵在於包括:半導體元件,在半導體晶片的主面上具有電極以及配線;第1樹脂構造體,配置在上述半導體晶片的主面側,與上述半導體元件的特定電極隔開空間,覆蓋上述特定電極的側邊以及上方;第2樹脂構造體,覆蓋上述第1樹脂構造體的外側,具有上述第1樹脂構造體的介電常數以下的介電常數;以及絕緣膜,覆蓋上述第2樹脂構造體的外側,透濕性比上述第2樹脂構造體小。
- 如申請專利範圍第1項所述的半導體裝置,其中,設置多層的配線在上述第2樹脂構造體的上方。
- 一種半導體裝置,其特徵在於包括:半導體元件,在半導體晶片的主面上具有電極以及配線;第1樹脂構造體,配置在上述半導體晶片的主面側,與上述半導體元件的特定電極隔開空間,覆蓋上述特定電極的側邊以及上方;絕緣膜,覆蓋上述第1樹脂構造體的外側,透濕性比上述第1樹脂構造體小;以及第2樹脂構造體,覆蓋上述第1樹脂構造體以及上述絕緣膜的外側,具有上述第1樹脂構造體的介電常數以下的介電常數。
- 如申請專利範圍第1至3項中任一項所述的半導體裝置,其中,將上述半導體元件、上述第1樹脂構造體、上述第2 樹脂構造體以及上述絕緣膜全部以環氧樹脂系熱硬化樹脂體密封,封裝化。
- 如申請專利範圍第4項所述的半導體裝置,其中,上述第2樹脂構造體以及上述絕緣膜的外側,覆蓋以具有上述第1樹脂構造體以及上述第2樹脂構造體的介電常數以下的介電常數的樹脂構成的第3樹脂構造體。
- 如申請專利範圍第1、2、3或5項所述的半導體裝置,其中,上述特定的電極,包含簷部,剖面成為Y型形狀或T型形狀的同時,在上述簷部的下部,具有另外的中空構造。
- 一種半導體裝置的製造方法,係申請專利範圍第1或5項中所述的半導體裝置的製造方法,其特徵在於包括:在半導體基板的主面上形成具有電極以及配線的半導體元件之步驟;在上述半導體基板的主面側形成非接觸圍繞上述半導體元件的特定電極的側邊的第1樹脂層之步驟;將配置在上述特定電極的上方之第2樹脂層,接合至上述第1樹脂層的上面後使其硬化,與上述特定電極隔開空間配置之步驟;在上述第1樹脂層以及上述第2樹脂層的上方與側方,以具有比上述第1樹脂層以及上述第2樹脂層的介電常數低的介電常數的樹脂,形成第3樹脂層的步驟;以及上述第3樹脂層的上面與側面,以透濕性比上述第3樹脂層小的絕緣膜覆蓋之步驟。
- 一種半導體裝置的製造方法,係申請專利範圍第3項所述的半導體裝置的製造方法,其特徵在於包括:在半導體基板的主面上形成具有電極以及配線的半導體元件之步驟;在半導體基板的主面側形成非接觸圍繞上述半導體元件的特定電極的側邊的第1樹脂層之步驟;將配置在上述特定電極的上方之第2樹脂層,接合至上述第1樹脂層的上面後使其硬化,與上述特定電極隔開空間配置之步驟;上述第1樹脂層以及上述第2樹脂層的上方與側方,以透濕性比上述第1樹脂層以及上述第2樹脂層小的絕緣膜覆蓋之步驟;以及上述絕緣膜的外側,以具有上述第1樹脂層以及上述第2樹脂層的介電常數以下的介電常數的樹脂覆蓋之步驟。
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